• Vincotech Introduces New Three-Phase flowCSPFC S3 SiC

    Vincotech Introduces New Three-Phase flowCSPFC S3 SiC

    1 Min Read

    The new Vincotech 1200 V flowCSPFC S3 SiC module featuring current-synthesizing PFC (CS-PFC) topology based on the constant power control, strikes the best balance between performance and system cost to benefit your business.

    The first module of this new product family is well suited for a DC fast charger PFC converter stage up to 35kW power, a “sweet spot” for building scalable DC charger units on a modular approach.

    Main benefits

    • Current-synthesizing PFC slashes module costs by > 25% with conversion efficiencyranging as high as >99%
    • System costs come down with fewer and smaller inductors on the PCB
    • No large electrolytic DC-link capacitors for even more system-level savings
    • Pinout is ready for bidirectional applications and optimized for easy PCB routing
    • High power density for compact designs and fast charging

    Applications

    • EV fast charger
    • UPS
    • ESS

    Original – Vincotech

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  • McLaren Applied Introduced IPG5-x 800V SiC Inverter

    McLaren Applied Introduced IPG5-x 800V SiC Inverter

    3 Min Read

    McLaren Applied has launched IPG5-x, a highly flexible 800V Silicon Carbide (SiC) inverter that can be integrated into Electric Drive Units (EDUs). Targeting growing OEM demand for high-performing, integrated EDUs that save space and cost, the British engineering and technology pioneer has developed IPG5-x to work with a variety of motors and transmissions – especially in performance applications.

    IPG5-x is an adaptation of McLaren Applied’s current award-winning 800V SiC inverter, IPG5. IPG5-x will coexist alongside the standalone IPG5, with application depending on customer need. The ‘x’ suffix was chosen because IPG5-x is a product designed for collaboration with Tier 1 and OEM partners looking to bring EDU products to market quickly and cost effectively. McLaren Applied is in discussions with several OEMs and Tier 1 suppliers, and is working with transmission provider TREMEC to jointly develop an integrated EDU for their first customer vehicle application.

    “In our discussions with customers and partners, it’s become clear that OEMs are increasingly looking for the option to source integrated EDUs that save space, cost and speed up  development time,” commented Paolo Bargiacchi, Head of Product, Automotive at McLaren Applied. “We’ve developed the IPG5-x to be highly flexible, so it’s ready to be integrated within any combination of motor and transmission. It carries over all of our standalone IPG5’s qualities – peak efficiencies over 99%, continuously variable switching and fine motor control – building on the maturity of that product.”

    Derived from decades of innovation in top tier automotive and motorsports, McLaren Applied’s IPG5-x offers best-in-class fine motor control and high efficiency through continuously variable switching frequencies; maximising the advantages of SiC semiconductors. 

    The IPG5-x forms a step forward in what the automotive team at McLaren Applied describes as the ‘waves of electrification’. The first wave involved early pioneers of technology, the second wave is denoted by the breakthrough of EVs to the mainstream. The third wave is efficiency and will see inverter technology rapidly adopt SiC semiconductors, especially in 800V architectures, enabling vehicles to achieve longer range where efficient power electronics are key.

    Bargiacchi added: “The immediate focus must be on achieving greater drivetrain efficiency and cost reduction, which you can do through a product like IPG5-x. The competitive landscape is ramping up significantly now that all manufacturers have established their product entry points. 

    “Models based on dedicated 800V SiC architectures are leading the way, driving a virtuous cycle: an efficient drivetrain inherently has a smaller battery, which makes the vehicle cheaper, lighter and easier to control, and offers a smaller embedded and operating carbon footprint. It also increases range and speeds up charge times, building trust in the technology.”

    As competition increases, we will enter the fourth wave, where OEMs will need to differentiate the customer experience their products deliver. In anticipation of this change, McLaren Applied has developed advanced motor control software in both IPG5 and IPG5-x that enables a variety of features ranging from improved refinement through to a more engaging drive.

    Original – McLaren Applied

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  • Toshiba Delivers 3rd Gen SiC MOSFETs

    Toshiba Delivers 3rd Gen SiC MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched silicon carbide (SiC) MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.

    The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

    Applications

    • Switching power supplies (servers, data centers, communications equipment, etc.)
    • EV charging stations
    • Photovoltaic inverters
    • Uninterruptible power supplies (UPS)

    Features

    • Four-pins TO-247-4L(X) package:
      Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive
    • 3rd generation SiC MOSFETs
    • Low drain-source On-resistance x gate-drain charge
    • Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)

    Original – Toshiba

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  • Toshiba Introduced Industry’s First 2200V Dual Silicon Carbide MOSFET Module

    Toshiba Introduced Industry’s First 2200V Dual Silicon Carbide MOSFET Module

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation developed “MG250YD2YMS3,” the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems. Volume shipments start today.

    Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products. However, anticipating widespread use of DC1500V in coming years, Toshiba has released the industry’s first 2200V product.

    MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.

    Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.

    Applications

    Industrial Equipment

    • Renewable energy power generation systems (photovoltaic power systems, etc.)
    • Energy storage systems
    • Motor control equipment for industrial equipment
    • High frequency DC-DC converter, etc.

    Features

    • Low drain-source on-voltage (sense):
      VDS(on)sense=0.7V (typ.) (ID=250A, VGS=+20V, Tch=25°C)
    • Low turn-on switching loss:
      Eon=14mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C)
    • Low turn-off switching loss:
      Eoff=11mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C)
    • Low stray inductance:
      LsPN=12nH (typ.)

    Original – Toshiba

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  • EPC Space Introduced Two New Rad-Hard GaN Devices

    EPC Space Introduced Two New Rad-Hard GaN Devices

    2 Min Read

    EPC Space announced the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. 

    The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.

    Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)
    EPC7019G40 V4 mΩ530 A
    EPC7018G100 V6 mΩ345 A
    EPC7020G200 V14.5 mΩ200 A
    EPC7030G300 V32 mΩ200 A

    With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

    “The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.

    Original – EPC Space

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  • Vishay Intertechnology Releases 650 V E Series Power MOSFET

    Vishay Releases 650 V E Series Power MOSFET

    2 Min Read

    Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.

    Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.

    Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

    Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.

    For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.

    Original – Vishay Intertechnology

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  • Toshiba Expands 80 V N-Channel Power MOSFETs

    Toshiba Expands 80 V N-Channel Power MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup.

    The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 mΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.

    The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.

    Toshiba is expanding its lineup of products to help cut equipment power consumption.

    Applications

    • Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
    • Motor control equipment (motor drives, etc.)

    Features

    • Latest generation process U-MOSX-H series
    • Low On-resistance:
      TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
      TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
      TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V)
    • High channel temperature: Tch (max)=175 °C

    Original – Toshiba

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  • Infineon Presents H7 Variant of Gen7 Discrete 650 V TRENCHSTOP™ IGBTs

    Infineon Presents H7 Variant of Gen7 Discrete 650 V TRENCHSTOP™ IGBTs

    2 Min Read

    Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.

    Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

    In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.

    For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.

    In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.

    Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.

    Original – Infineon Technologies

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  • Toshiba Launches Automotive 40V N-Channel Power MOSFETs

    Toshiba Launches Automotive 40V N-Channel Power MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB,” that use Toshiba’s new S-TOGL™ (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. Volume shipments start today.

    Safety-critical applications like autonomous driving systems ensure reliability through redundant design, with the result that they integrate more devices and require more mounting space than standard systems. Accordingly, advancing size reductions in automotive equipment requires power MOSFETs that can be mounted at high current densities.

    XPJR6604PB and XPJ1R004PB use Toshiba’s new S-TOGL™ package (7.0mm×8.44mm) which features a post-less structure unifying the source connective part and outer leads. A multi-pin structure for the source leads decreases package resistance.

    The combination of the S-TOGL™ package and Toshiba’s U-MOS IX-H process achieve a significant On-resistance reduction of 11% against Toshiba’s TO-220SM (W) package product, which has the same thermal resistance characteristics. The new package also cuts the required mounting area by approximately 55% against the TO-220SM(W) package.

    On top of this, the 200A drain current rating of the new package is higher than Toshiba’s similarly sized DPAK + package (6.5mm×9.5mm), enabling high current flow. Overall, the S-TOGL™ package realizes high-density and compact layouts, reduces the size of automotive equipment, and contributes to high heat dissipation.

    Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL™ package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.

    Assuming that multiple devices will be connected in parallel for applications requiring higher-current operation, Toshiba supports grouping shipment for the new products, in which the gate threshold voltage is used for grouping. This allows designs using product groups with small characteristic variation.

    Toshiba will continue to expand its product line-up of power semiconductor products and contribute to the realization of carbon neutrality with more user-friendly, high-performance power devices.

    Features:

    • New S-TOGL™ package: 7.0mm×8.44mm (typ.)
    • Large drain current rating:
      XPJR6604PB: ID=200A
      XPJ1R004PB: ID=160A
    • AEC-Q101 qualified
    • IATF 16949/PPAP available[4]
    • Low On-resistance:
      XPJR6604PB: RDS(ON)=0.53mΩ (typ.) (VGS=10V)
      XPJ1R004PB: RDS(ON)=0.8mΩ (typ.) (VGS=10V)

    Original – Toshiba

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  • Infineon Launched New Automotive OptiMOS™ 5 in TOLx Packages

    Infineon Launched New Automotive OptiMOS™ 5 in TOLx Packages

    2 Min Read

    The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. Therefore, the automotive market for Electronic Control Units (ECUs) powered by 24 V-72 V is expected to keep growing in the coming years.

    To address this development, Infineon Technologies AG is complementing its OptiMOS™ 5 portfolio of automotive MOSFETs in the 60 V and 120 V range with new products in the high power packages TOLL, TOLG and TOLT. They are offering a compact form factor with very good thermal performance combined with excellent switching behavior.

    The six new products offer a narrowed gate threshold voltage (V GS(th)) enabling designs with parallel MOSFETs for increased output power capability. The IAUTN06S5N008, IAUTN06S5N008G and IAUTN06S5N008T are 60 V MOSFETs, and the IAUTN12S5N017, IAUTN12S5N018G and IAUTN12S5N018T are 120 V MOSFETs.

    The on resistance (R DS(on)) ranges from 1.7 mΩ to 1.8 mΩ for the 120 V MOSFETs and is 0.8 mΩ for the 60 V MOSFETs. This makes the 60V MOSFETs perfectly suited for high power 24 V supplied CAV applications or for HV-LV DCDC converters in xEVs. The 120 V MOSFETs are used in 48 V – 72 V supplied traction inverters for 2- or 3-wheelers and light electric vehicles.

    Original – Infineon Technologies

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