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EPC Space announced the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints.
The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) EPC7019G 40 V 4 mΩ 530 A EPC7018G 100 V 6 mΩ 345 A EPC7020G 200 V 14.5 mΩ 200 A EPC7030G 300 V 32 mΩ 200 A With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Original – EPC Space
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Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
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Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup.
The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 ｍΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.
The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.
Toshiba is expanding its lineup of products to help cut equipment power consumption.
Applications
- Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Latest generation process U-MOSX-H series
- Low On-resistance:
TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V) - High channel temperature: Tch (max)=175 °C
Original – Toshiba
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Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.
Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.
In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.
For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.
In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.
Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB,” that use Toshiba’s new S-TOGL™ (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. Volume shipments start today.
Safety-critical applications like autonomous driving systems ensure reliability through redundant design, with the result that they integrate more devices and require more mounting space than standard systems. Accordingly, advancing size reductions in automotive equipment requires power MOSFETs that can be mounted at high current densities.
XPJR6604PB and XPJ1R004PB use Toshiba’s new S-TOGL™ package (7.0mm×8.44mm) which features a post-less structure unifying the source connective part and outer leads. A multi-pin structure for the source leads decreases package resistance.
The combination of the S-TOGL™ package and Toshiba’s U-MOS IX-H process achieve a significant On-resistance reduction of 11% against Toshiba’s TO-220SM (W) package product, which has the same thermal resistance characteristics. The new package also cuts the required mounting area by approximately 55% against the TO-220SM(W) package.
On top of this, the 200A drain current rating of the new package is higher than Toshiba’s similarly sized DPAK + package (6.5mm×9.5mm), enabling high current flow. Overall, the S-TOGL™ package realizes high-density and compact layouts, reduces the size of automotive equipment, and contributes to high heat dissipation.
Since automotive equipment is used in extreme temperature environments, the reliability of surface mounting solder joints is a critical consideration. The S-TOGL™ package uses gull-wing leads that reduce mounting stress, improving the reliability of the solder joint.
Assuming that multiple devices will be connected in parallel for applications requiring higher-current operation, Toshiba supports grouping shipment for the new products, in which the gate threshold voltage is used for grouping. This allows designs using product groups with small characteristic variation.
Toshiba will continue to expand its product line-up of power semiconductor products and contribute to the realization of carbon neutrality with more user-friendly, high-performance power devices.
Features:
- New S-TOGL™ package: 7.0mm×8.44mm (typ.)
- Large drain current rating:
XPJR6604PB: ID=200A
XPJ1R004PB: ID=160A - AEC-Q101 qualified
- IATF 16949/PPAP available[4]
- Low On-resistance:
XPJR6604PB: RDS(ON)=0.53mΩ (typ.) (VGS=10V)
XPJ1R004PB: RDS(ON)=0.8mΩ (typ.) (VGS=10V)
Original – Toshiba
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The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. Therefore, the automotive market for Electronic Control Units (ECUs) powered by 24 V-72 V is expected to keep growing in the coming years.
To address this development, Infineon Technologies AG is complementing its OptiMOS™ 5 portfolio of automotive MOSFETs in the 60 V and 120 V range with new products in the high power packages TOLL, TOLG and TOLT. They are offering a compact form factor with very good thermal performance combined with excellent switching behavior.
The six new products offer a narrowed gate threshold voltage (V GS(th)) enabling designs with parallel MOSFETs for increased output power capability. The IAUTN06S5N008, IAUTN06S5N008G and IAUTN06S5N008T are 60 V MOSFETs, and the IAUTN12S5N017, IAUTN12S5N018G and IAUTN12S5N018T are 120 V MOSFETs.
The on resistance (R DS(on)) ranges from 1.7 mΩ to 1.8 mΩ for the 120 V MOSFETs and is 0.8 mΩ for the 60 V MOSFETs. This makes the 60V MOSFETs perfectly suited for high power 24 V supplied CAV applications or for HV-LV DCDC converters in xEVs. The 120 V MOSFETs are used in 48 V – 72 V supplied traction inverters for 2- or 3-wheelers and light electric vehicles.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has developed 2200 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) for photovoltaic (PV) inverters. A two-level inverter with the new devices realized higher frequency operation and lower power loss than a conventional three-level silicon (Si) insulated gate bipolar transistor (IGBT) inverter. The new MOSFETs also contribute to simplification of inverter systems and reductions in their size and weight.
Three-level inverters enjoy the advantage of low switching losses because the voltage applied to switching devices in the inverters during off-state is half the line voltage. Against this, two-level inverters have fewer switching modules than three-level inverters, realizing a simpler, smaller, and lighter system. However, they require semiconductors with higher breakdown voltage, as the applied voltage is equal to the line voltage. Also, demand for semiconductors with both low loss and high breakdown voltage is growing as 1500 V DC line voltage systems are introduced in photovoltaic and other renewable energy markets.
Toshiba Electronic Devices & Storage Corporation has developed 2200 V Schottky barrier diode (SBD)-embedded SiC MOSFETs for two-level inverters in 1500 V DC voltage systems. The impurity concentration and thickness of the drift layer has been optimized to maintain the same relationship between the on-resistance and the breakdown voltage as our existing products, and also to achieve high resistance to cosmic rays, a requirement for PV systems. It has also been confirmed that embedding SBDs clamped parasitic PN junctions between the p-base regions and the n-drift layer secure high reliability in reverse conduction.
Switching energy loss for the developed all-SiC module is far lower than for the Si module (Si IGBTs + Si fast recovery diodes) with the same 2000 V rated voltage class. Estimates of inverter power dissipation found that the developed SiC module achieves higher frequency operation twice that of a conventional Si IGBT, as well as a 37% lower loss for the two-level SiC inverter against the three-level Si inverter. The higher frequency operation enables downsizing and weight reduction of other system components, such as heat sinks and filters.
Original – Toshiba
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Transphorm, Inc. announced it has demonstrated up to 5 microsecond short circuit withstand time (SCWT) on a GaN power transistor with a patented technology. The achievement is the first of its kind on record, marking an important milestone for the industry as a whole. It proves Transphorm GaN’s ability to meet the required short circuit capabilities of rugged power inverters such as servo motors, industrial motors, and automotive powertrains served traditionally by silicon IGBTs or silicon carbide (SiC) MOSFETs— an over $3 billion GaN TAM over the next 5 years.
The demonstration was developed with support from Yaskawa Electric Corporation, a long-term strategic partner of Transphorm’s and a global leader in low and medium voltage drives, servo systems, machine controllers, and industrial robots. This makes GaN a highly attractive power conversion technology for servo systems, as it allows for higher efficiency and reduced size compared to incumbent solutions.
To do that, GaN must pass stringent robustness tests—of which, short-circuit survivability is the most challenging. In case of short-circuit faults, the device must survive extreme conditions with both high current and high voltage. The system can take up to a few microseconds to detect the fault and shut down the operations. During this time, the device must withstand the fault on its own.
“If a power semiconductor device cannot survive short-circuit events, the system itself may fail. There was a strong perception that GaN power transistors could not meet the short circuit requirements needed for heavy-duty power applications such as ours,” said Motoshige Maeda, Department Manager of Fundamental R&D Management Department, Corporate Technology Division, Yaskawa. “Having worked with Transphorm for many years, we believed that perception to be unfounded and have been proven right today. We’re excited about what their team has accomplished and look forward to demonstrating how this new GaN feature can benefit our designs.”
The short-circuit technology has been demonstrated on a newly designed 15 mΩ 650 V GaN device. Notably, that device reaches a peak efficiency of 99.2% and a maximum power of 12 kW in hard-switching conditions at 50 kHz. The device demonstrated not only performance, but also reliability, passing high-temperature high-voltage stress requirements.
“Standard GaN devices can withstand short-circuit for only a few hundredths of nanoseconds, which is too short for fault detection and safe shut-down. However, with our cascode architecture and key patented technology, we were able to demonstrate short-circuit withstand time up to 5 microseconds with no additional external components, thus retaining low cost and high performance,” said Umesh Mishra, CTO and Co-Founder, Transphorm.
“We understand the demands of high-power, high-performance inverter systems. We have a long history of strong innovation, and we’re proud to say that experience helped us bring GaN to the next level. This is yet another validation of Transphorm’s global leadership in high voltage GaN robustness and reliability and will be a gamechanger for GaN in motor drives and other high-power systems.”
The full description explaining the SCWT achievement, the demonstration analysis, and more is expected to be presented at a major power electronics conference next year.
Original – Transphorm
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Fuji Electric Co., Ltd. announced the launch of the P633C Series 3rd-generation small IPMs, which help reduce the power consumption of the equipment on which it is mounted, such as home appliances and machine tools.
IPMs (intelligent power modules) are power semiconductors equipped with a built-in IGBT drive circuit and protection function. They are used for applications including inverters and servo systems. Inverters and servo systems control machine operation by controlling voltage and frequency through power semiconductor switching (turning electricity on and off), but power semiconductors generate power loss and electromagnetic noise during switching.
This product can reduce both the power loss and the electromagnetic noise generated during switching. Using this product in inverters for home appliances or servo systems for machine tools can reduce the power consumption of the equipment on which it is mounted, thereby contributing to the achievement of a decarbonized society.
One way to reduce the power loss that occurs during switching is to speed up the switching operation. Faster switching increases electromagnetic noise, which can cause peripheral devices to malfunction. This product uses the latest 7th-generation IGBT/FWD chips, achieving a 10% reduction of power loss and a reduction of electromagnetic noise to approximately 1/3 compared with conventional products. The trade-off characteristics between power loss and noise are among the best in the industry.
Original – Fuji Electric
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SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.
Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.
Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.
Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.
The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.
Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:
- Blocking voltage:1200V
- Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
- Low Switching Losses
- High current density
- Press FIT Contact Technology
- 175°C maximum junction temperature
- Thermistor inside
DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.
The other applications that will benefit from DFH10AL12EZC1 include:
- Solar inverter Systems
- Three-level Systems
- Energy Storage Systems
- High Frequency Switching Systems
Original – Leapers Semiconductor
