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Shin-Etsu Chemical Co., Ltd. has determined that QST® (Qromis Substrate Technology) substrate is an essential material for the social implementation of high-performance, energy-efficient GaN (gallium nitride) power devices, and the company will promote the development and launching on the market of these products.
Since QST® substrate is designed to have the same coefficient of thermal expansion (CTE) as GaN, it enables suppression of warpage and cracking of the GaN epitaxial layer and resultant large-diameter, high-quality thick GaN epitaxial growth. Taking advantage of these characteristics, it is expected to be applied to power devices and RF devices (5G and beyond 5G), which have been rapidly growing in recent years, as well as in such areas as MicroLED growth for MicroLED displays.
In addition to sales of QST® substrates, Shin-Etsu Chemical will also sell GaN grown QST® substrates upon customer request. We currently have a line-up of 6″ and 8″ diameter substrates, and we are working on 12″ diameter substrates. Since 2021, for each respective application for power devices, RF devices and LEDs, sample evaluation and device development are continuing with numerous customers in Japan and globally. Especially for power devices, continuous evaluation is underway for devices in the wide range of 650V to 1800V.
So far, Shin-Etsu Chemical has repeatedly made many improvements with regard to its QST® substrates. One example is the significant improvement in lowering defects originating from the bonding process, which has enabled the supply of high-quality QST® substrates. In addition, for the thicker GaN films that many of our customers have requested, we have promoted the provision of template substrates with optimized buffer layers, which enables our customers to realize stable epitaxial growth of more than 10 μm thickness. Furthermore, various successful results have been produced and reported on, including the achievement of thick-film GaN growth exceeding 20 μm using QST® substrates and the achievement of 1800V breakdown voltage in power devices.
Moreover, Shin-Etsu Chemical and Oki Electric Industry Co., Ltd. have jointly succeeded in developing a technology to exfoliate GaN from QST® substrates and bond it to substrates made of different materials using Crystal Film Bonding (CFB) technology. Until now, most GaN power devices have been lateral devices, but CFB technology takes advantage of the characteristics of QST® substrates to realize vertical power devices that can control large currents by exfoliating a thick layer of high-quality GaN from an insulating QST® substrate (see figure below).
To customers who manufacture GaN devices, Shin-Etsu Chemical will provide QST® substrates or GaN grown QST® substrates and Oki Electric Industry will provide its CFB technology through partnering or licensing. In this way, the two companies hope to contribute to the advancement of vertical power devices.
Based on these development results and also based on business situation inquiries from customers, Shin-Etsu Chemical will continue to increase production to meet customer demand.
Shin-Etsu Chemical will contribute to the realization of a sustainable society that can use energy efficiently by further promoting the social implementation of GaN devices that have characteristics that are absolutely essential for the future society.
Original – Shin-Etsu Chemical
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STMicroelectronics has released a new class of IGBTs with an increased breakdown-voltage capability of 1350V and maximum operating temperature of 175°C. The higher ratings ensure greater design margin, robust performance, and extended reliability under all operating conditions.
The new STPOWER IH2 series IGBTs also permit increased power-conversion efficiency. Favorable parameters include low saturation voltage, Vce(sat), which ensures low dissipation when the device is turned on. The freewheeling diode has low voltage drop and optimized turn-off energy that increases the efficiency of single-switch quasi-resonant converters operating at frequencies from 16kHz to 60kHz.
With their ruggedness and high efficiency, these IGBTs are ideal for induction-heating applications including domestic appliances such as kitchen hobs, inverter microwave ovens, and rice cookers. In a 2kW application, ST’s new IGBT devices can reduce power dissipation by up to 11%.
In addition, the Vce(sat) has a positive temperature coefficient and tight parameter distribution between devices helps simplify design and ease connecting multiple IGBTs in parallel to address high-power applications.
The first two devices in the series, the 25A STGWA25IH135DF2 and 35A STGWA35IH135DF2, are in production now and available in a standard TO-247 long-lead power package.
Original – STMicroelectronics
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The new Vincotech 1200 V flowCSPFC S3 SiC module featuring current-synthesizing PFC (CS-PFC) topology based on the constant power control, strikes the best balance between performance and system cost to benefit your business.
The first module of this new product family is well suited for a DC fast charger PFC converter stage up to 35kW power, a “sweet spot” for building scalable DC charger units on a modular approach.
Main benefits
- Current-synthesizing PFC slashes module costs by > 25% with conversion efficiencyranging as high as >99%
- System costs come down with fewer and smaller inductors on the PCB
- No large electrolytic DC-link capacitors for even more system-level savings
- Pinout is ready for bidirectional applications and optimized for easy PCB routing
- High power density for compact designs and fast charging
Applications
- EV fast charger
- UPS
- ESS
Original – Vincotech
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McLaren Applied has launched IPG5-x, a highly flexible 800V Silicon Carbide (SiC) inverter that can be integrated into Electric Drive Units (EDUs). Targeting growing OEM demand for high-performing, integrated EDUs that save space and cost, the British engineering and technology pioneer has developed IPG5-x to work with a variety of motors and transmissions – especially in performance applications.
IPG5-x is an adaptation of McLaren Applied’s current award-winning 800V SiC inverter, IPG5. IPG5-x will coexist alongside the standalone IPG5, with application depending on customer need. The ‘x’ suffix was chosen because IPG5-x is a product designed for collaboration with Tier 1 and OEM partners looking to bring EDU products to market quickly and cost effectively. McLaren Applied is in discussions with several OEMs and Tier 1 suppliers, and is working with transmission provider TREMEC to jointly develop an integrated EDU for their first customer vehicle application.
“In our discussions with customers and partners, it’s become clear that OEMs are increasingly looking for the option to source integrated EDUs that save space, cost and speed up development time,” commented Paolo Bargiacchi, Head of Product, Automotive at McLaren Applied. “We’ve developed the IPG5-x to be highly flexible, so it’s ready to be integrated within any combination of motor and transmission. It carries over all of our standalone IPG5’s qualities – peak efficiencies over 99%, continuously variable switching and fine motor control – building on the maturity of that product.”
Derived from decades of innovation in top tier automotive and motorsports, McLaren Applied’s IPG5-x offers best-in-class fine motor control and high efficiency through continuously variable switching frequencies; maximising the advantages of SiC semiconductors.
The IPG5-x forms a step forward in what the automotive team at McLaren Applied describes as the ‘waves of electrification’. The first wave involved early pioneers of technology, the second wave is denoted by the breakthrough of EVs to the mainstream. The third wave is efficiency and will see inverter technology rapidly adopt SiC semiconductors, especially in 800V architectures, enabling vehicles to achieve longer range where efficient power electronics are key.
Bargiacchi added: “The immediate focus must be on achieving greater drivetrain efficiency and cost reduction, which you can do through a product like IPG5-x. The competitive landscape is ramping up significantly now that all manufacturers have established their product entry points.
“Models based on dedicated 800V SiC architectures are leading the way, driving a virtuous cycle: an efficient drivetrain inherently has a smaller battery, which makes the vehicle cheaper, lighter and easier to control, and offers a smaller embedded and operating carbon footprint. It also increases range and speeds up charge times, building trust in the technology.”
As competition increases, we will enter the fourth wave, where OEMs will need to differentiate the customer experience their products deliver. In anticipation of this change, McLaren Applied has developed advanced motor control software in both IPG5 and IPG5-x that enables a variety of features ranging from improved refinement through to a more engaging drive.
Original – McLaren Applied
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Toshiba Electronic Devices & Storage Corporation has launched silicon carbide (SiC) MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest 3rd generation SiC MOSFETs chip for industrial equipment. Volume shipments of ten products, five with 650V ratings and five with 1200V, start today.
The new products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive. The package can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34%, compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.
Applications
- Switching power supplies (servers, data centers, communications equipment, etc.)
- EV charging stations
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Features
- Four-pins TO-247-4L(X) package:
Switching loss is reduced by Kelvin connection of the signal source terminal for the gate drive - 3rd generation SiC MOSFETs
- Low drain-source On-resistance x gate-drain charge
- Low diode forward voltage: VDSF=-1.35V (typ.) (VGS=-5V)
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation developed “MG250YD2YMS3,” the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems. Volume shipments start today.
Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products. However, anticipating widespread use of DC1500V in coming years, Toshiba has released the industry’s first 2200V product.
MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial Equipment
- Renewable energy power generation systems (photovoltaic power systems, etc.)
- Energy storage systems
- Motor control equipment for industrial equipment
- High frequency DC-DC converter, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=0.7V (typ.) (ID=250A, VGS=+20V, Tch=25°C) - Low turn-on switching loss:
Eon=14mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C) - Low turn-off switching loss:
Eoff=11mJ (typ.) (VDD=1100V, ID=250A, Tch=150°C) - Low stray inductance:
LsPN=12nH (typ.)
Original – Toshiba
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EPC Space announced the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints.
The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) EPC7019G 40 V 4 mΩ 530 A EPC7018G 100 V 6 mΩ 345 A EPC7020G 200 V 14.5 mΩ 200 A EPC7030G 300 V 32 mΩ 200 A With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Original – EPC Space
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Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
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Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup.
The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 ｍΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.
The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.
Toshiba is expanding its lineup of products to help cut equipment power consumption.
Applications
- Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Latest generation process U-MOSX-H series
- Low On-resistance:
TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V) - High channel temperature: Tch (max)=175 °C
Original – Toshiba
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Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.
Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.
In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.
For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.
In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.
Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.
Original – Infineon Technologies
