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ROHM has developed four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration – help solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.
As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently progressing. However, for SiC power devices that are attracting attention as key components, achieving low loss in a small size has been a difficult challenge. ROHM solves these issues inside powertrains with its TRCDRIVE pack™.
A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in – resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.
The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.
TRCDRIVE pack™ is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes (Small / Large) and mounting patterns (TIM: heat dissipation sheet / Ag sinter). In addition, ROHM is developing a 6-in-1 product with built-in heat sink that is expected to facilitate rapid traction inverter design and model rollout tailored to a variety of design specifications.
Original – ROHM
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In the current rapidly evolving electronics industry, there is an increasing demand for high-performance MOSFETs. With its superior specifications and robust design, the MS2N350HGC0 MOSFET stands out as an innovative solution for a wide range of high-voltage applications.
The MS2N350HGC0 MOSFET has been designed to meet the rigorous specifications of contemporary electronics, offering an unparalleled combination of features and performance. This MOSFET is the ideal choice for high-voltage power supplies, capacitor discharge, pulse circuits and laser and X-ray generation systems. With a maximum drain-source voltage of 3500V and a continuous drain current of 2A, it is capable of withstanding the high voltage applications on the market.
One of the standout features of the MS2N350HGC0 is its rapid intrinsic diode and minimized gate charge.. This enables the device to operate at high speeds, which is crucial for applications that necessitate rapid response times. Moreover, the MOSFET exhibits exceedingly low intrinsic capacitances, which further enhances its performance in demanding applications.
The MS2N350HGC0’s on-state resistance (Rds) of 19Ω further enhances its performance, allowing for efficient energy transfer and minimal heat generation. This makes it an excellent choice for power supplies and other applications where efficiency and reliability are paramount.
The product is packaged in accordance with the industry standard TO-247, thereby ensuring compatibility with a wide range of existing systems. Its compact size and lightweight design facilitate integration into any application.
The MOSFET’s electrical ratings are noteworthy for their impressive nature. This product is capable of withstanding a continuous drain current of 2A at 25°C and 1.6A at 100°C, with a pulsed drain current of up to 6A. This makes it suitable for even the most demanding applications. Furthermore, its total dissipation of 463 watts at 25°C guarantees reliable operation even under heavy load conditions.
The MS2N350HGC0 also offers excellent avalanche and thermal performance. It has an avalanche current of 1.3A and can withstand a single pulse avalanche energy of 81mJ. The operating junction temperature ranges from -55°C to 150°C, ensuring stable performance even in extreme environments.
For ease of installation, the MS2N350HGC0 has a maximum lead temperature for soldering purposes of 300°C and a mounting torque of 1.13N·m. This ensures that the MOSFET can be securely mounted into any system with minimal effort.
In conclusion, the MS2N350HGC0 MOSFET is a powerful and reliable solution for high-voltage applications. The superior performance, compact design, and excellent thermal stability of the product make it the optimal choice for a diverse range of applications. To gain further insight into this innovative new product, we invite you to contact our sales team. We encourage you to explore the potential of the MS2N350HGC0 MOSFET and discover how it can revolutionize your high-voltage applications.
Original – Maspower Semiconductor
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Crystal IS, an Asahi Kasei company, announced production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99% usable area, based on current requirements for UVC LEDs. This improved quality is steadily approaching that of Crystal IS’ existing 2-inch substrates used in the production of its UVC LEDs. The ultra-wide bandgap and high thermal conductivity of AlN helps improve device reliability and performance in both UVC LEDs and other next generation RF and power devices.
“The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in aluminum nitride innovation,” said Eoin Connolly, President and CEO of Crystal IS. “The inherent benefits of aluminum nitride are unlocking new applications in RF and power devices—we are excited to work with our partners to further develop this material to meet their needs.”
This achievement follows the company’s announcement of the first ever recorded 100 mm diameter in August 2023, which won an excellence award at Semiconductor of the Year in electronic materials for the Semiconductors Category. The Semiconductor of the Year Awards are organized by Electronic Device Industry News, an industry journal published in Tokyo by SangyoTimes Inc.
Crystal IS manufactures bulk aluminum nitride substrates at its headquarters in Green Island, New York and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023. This 100 mm diameter milestone accelerates the development of new applications on aluminum nitride substrates as it integrates into existing fabrication lines for power and RF devices using alternative materials. The company plans to offer 100 mm diameter substrates manufactured in its US facility to key partners this year as they expand their focus beyond UVC LEDs.
Original – Crystal IS
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EPC Space announced the introduction of two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.
The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints.
EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) Package Size (mm) Total Dose (TID) Heavy Ion Single Event Effects (SEE) EPC7001BSH 40 11 mΩ 120 5.7 x 3.9 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown EPC7002ASH 40 28 mΩ 40 3.4 x 3.4 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Original – EPC Space
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Infineon Technologies AG is expanding its portfolio of next-generation OptiMOS™ 7 MOSFETs for automotive applications: the portfolio of 40 V products now includes additional devices in robust, lead-free packages. In addition, 80 V and 100 V OptiMOS 7 MOSFETs are now also available.
The MOSFETs are optimized for all standard and future automotive 48 V applications, including electric power steering, braking systems, power switches in new zone architectures, battery management, e-fuse boxes, DC/DC, and BLDC drives in various 12 V and 48 V electrical system applications. They are also suitable for other transportation applications such as light electric vehicles (LEV), e2wheelers, eScooters, eMotorcycles, and commercial and agricultural vehicles (CAV).
“As a technology leader in power semiconductors, Infineon is committed to shape the future technology standards in automotive power MOSFETs in terms of power efficiency, innovative and robust power packaging with high quality,” said Axel Hahn, Senior Vice President and General Manager Automotive LV MOSFETs of Infineon. “We are providing our customers a diverse product portfolio and are addressing all their requirements to drive the development of modern automotive applications.”
By combining 300 mm thin-wafer technology and innovative packaging, the new OptiMOS 7 technology enables significant performance advantages in all available voltage classes. As a result, the components are now available in various rugged automotive power packages, including Single SSO8 (5×6), Dual SSO8 (5×6), mTOLG (8×8) and sTOLL (7×8).
The family offers high power density and energy efficiency with the industry’s lowest on-state resistance (e.g. 1.3 mΩ max in a single SSO8 (5×6) 80V package) in the smallest form factor. The devices also offer reduced switching losses, improved Safe Operating Area (SOA) robustness and high avalanche current capability. With this, they enable a highly efficient system design for tomorrow’s automotive applications.
Original – Infineon Technologies
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Cambridge GaN Devices has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies. New ICeGaN™ P2 series ICs feature RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The explosive growth of AI is leading to a significant increase in energy consumption, prompting data centre systems designers to prioritise the use of GaN for high-power, efficient power solutions. This new family of Power GaN ICs is a stepping stone for CGD to support our customers and partners on achieving and exceeding 100 kW/rack power density in Data Centres, required by most recent TDP (Thermal Design Power) trends for High-density computing. On the other hand, developers of motor control inverters are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN Series P2 ICs outperform discrete e-Mode GaN and other incumbent technologies.
The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications 6 with ease. The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.
New P2 ICeGaN GaN power ICs are sampling now. The P2 series includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, rated at 27 A and 60 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.
Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies , and a 3 kW totem-pole power factor correction demo board.
The new P2 series ICeGaN GaN power ICs and demo boards were unveiled publicly at the PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
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WeEn Semiconductors unveiled new families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging at this year’s PCIM Europe exhibition and conference. The company has also used the event to showcase for the first time a comprehensive range of integrated SiC power modules in Nuremberg, from June 11-13, 2024.
WeEn Semiconductor’s new TSPAK MOSFET and SBD devices address the demand for high-performance, compact and reliable power management in applications ranging from automotive charging and on-board charger applications to photovoltaic (PV) inverters and high-power-density power supplies (PSUs).
Offering a variety of configuration options for maximum design flexibility, the company’s new SiC modules are ideal for applications such as EV charging, energy storage systems, PV inverters, motor drives, industrial PSUs and test instrumentation.
Originally developed for automotive applications, TSPAK devices combine innovative top-side cooling capability with low thermal impedance to deliver enhanced thermal performance. By removing the PCB thermal resistance from the thermal dissipating path, the Junction-Ambient thermal resistance improves by 16-19%.
This supports high reliability by enabling a greater number of power cycles than conventional packaging as well as providing the increased power densities demanded by compact system designs. Low circuit inductance and low EMC noise help to improve performance and reduce filtering requirements. The WeEn Semiconductors family of TSPAK MOSFETs features 650V, 750V, and 1200V options with resistances ranging from 12mΩ to 150mΩ. TSPAK SBDs are available with current ratings of 10 to 40A in 650V, 750V, and 1200V variants.
Visitors to WeEn’s stand in Hall 9, booth 538, will have the first opportunity to explore the company’s extensive range of SiC power modules. With a wide range of topology options, including half-bridge, four-pack, six-pack, and MPPT booster configurations, the power modules support voltages ranging from 650V to 1200V. Depending on the option chosen and special designs, modules incorporate a variety of advanced features including synchronized chip current sharing, integrated temperature sensors, topside cooling structures and the latest clip-bond technologies.
Original – WeEn Semiconductors
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SemiQ Inc announced the addition of 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC™ product line. The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies, uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters and electric vehicle (EV) charging stations.
Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1700V SiC Schottky diode technologies offer enhanced thermal management that reduces the need for cooling. As a result, engineers can implement highly efficient, high-performance designs that minimize system heat dissipation, allow the use of smaller heatsinks and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of -55 °C to 175 °C.
The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode is rated for respective maximum forward currents of 110A and 151A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications.
The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package. Maximum respective forward currents are 110A and 214A and each combine outstanding performance at high-frequencies with low loss and low EMI operation. ensure energy efficiency and reliability by minimizing interference.
Key features include low stray inductance, high junction temperature operation, rugged and easy mounting, and an internally isolated package (AIN), which provides optimal insulation and thermal conductivity. Low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions. The modules can be easily connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf).
“Our new 1700V SiC diodes represent a leap forward in power efficiency and reliability,” said Dr. Timothy Han, President at SemiQ. “With their compact and flexible design, low-loss operation, and superior thermal management, our QSiC™ diodes will enable our customers to create innovative, high-performance solutions while reducing costs and improving overall system efficiency.”
All parts have been tested at voltages exceeding 1870V and have undergone avalanche testing up to 1250mJ. Visitors to SemiQ’s stand at Alfatec’s booth (Hall 7, 418) at PCIM Europe will have the first opportunity to explore the new 1700V SiC diodes.
Original – SemiQ
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Power Integrations enhanced its hardware-software bundle for brushless DC motors (BLDC) with BridgeSwitch™-2, a new high-voltage integrated half-bridge (IHB) motor-driver IC family targeting applications up to 1 HP (746 W). The new ICs, which feature high- and low-side drivers and advanced FREDFETs with integrated lossless current sensing, deliver inverter efficiency of up to 99 percent.
The IHB architecture eliminates hot spots, which increases design flexibility and reliability, slashes component count and saves PCB area. BridgeSwitch-2 is supported by Power Integrations’ MotorXpert™ software suite which includes single-phase trapezoidal control and three-phase sensor-less Field Oriented Control (FOC) modules, speeding inverter development.
BridgeSwitch-2 ICs handle operational exceptions in hardware, which permits the use of IEC 60730 Class A safety software, reducing certification time by months. Quiescent BLDC inverters can be ordered into sleep-mode, reducing driver power consumption to less than 10 mW; this leaves more power available under regulated standby power limits to be allocated for loads such as network access and monitoring.
Cristian Ionescu-Catrina, product marketing manager at Power Integrations, said: “The low standby consumption of BridgeSwitch-2-based motor drives enables designers to meet new and emerging EU ERP regulations. BridgeSwitch-2 ICs are also far more efficient than IGBT based IPMs across the entire load range.”
He continued: “From startup to performance optimization, the GUI-based tool, terminal emulator and MISRA C-compliant code library of MotorXpert greatly simplifies the design process, allowing the motor architecture to be optimized in real-time without repeated firmware updates. BridgeSwitch-2 is microprocessor agnostic, easing its adoption into existing systems – this is important as engineers update designs to meet more stringent standby regulations.”
BridgeSwitch-2 ICs address a power range of 30 to 746 W (1 HP), encompassing a broad range of applications including heat exchanger fans, refrigerator compressors, fluid and circulation pumps, gas boiler combustion fans, washing machine drums and kitchen blenders and mixers.
The IHB architecture reduces component count by 50 percent and PCB space by 30 percent over discrete designs by eliminating shunt resistors and associated signal conditioning circuits. Shunt losses are also eliminated, improving efficiency. Precise motor control is achieved with the built-in real-time reporting of phase current (IPH) information.
Accurate turn-on/off gate drive and a soft-body diode result in a typical EMI profile 10 dB lower than existing drivers, so a smaller EMI filter can be selected. BridgeSwitch-2 ICs feature built-in DC overvoltage protection and current limits that protect the inverter and the system without relying on system software.
The choice of error-flag or comprehensive fault bus reporting supports a range of system requirements. Emerging use-cases like failure prediction are now possible with the high accuracy of the built-in IPH information and comprehensive reporting via the fault bus. BridgeSwitch-2 motor drives use built-in, hardware-based low- and high-side over-current protection to meet IEC 60335-1 Class A requirements. BridgeSwitch-2 also works without an auxiliary power supply, further reducing PCB area and component count.
Original – Power Integrations
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Infineon Technologies AG introduced Power System Reliability Modeling, an innovative solution addressing the increasing challenges faced by data centers and telecom infrastructures due to power supply failures in the system.
With 39 percent of downtimes attributed to power outages and an average cost of $687,700 per downtime, the need for seamless operations and mitigation of financial impact is urgent. By integrating Infineon’s power monitoring solution, organizations can enhance operational resilience, reduce their carbon-footprint and achieve substantial cost savings.
The offering consists of an algorithm running on a digital power controller, thus integrating software and hardware. This is in line with Infineon’s strategic approach to provide customers with comprehensive system solutions that include both semiconductor devices and matching software tools. Target applications of the solution include DCDC converters, ACDC rectifiers and IBC modules utilized in data centers, AI servers, GPUs, and telecom networks.
Power System Reliability Modeling acts as a bridge between component and system reliability. It enables real-time power supply health monitoring of the system and lifetime estimation based on dynamic system operating parameters, a power supply system model, and a reliability prediction procedure in digital power controllers by Infineon.
This solution ensures improved device utilization and data-driven maintenance recommendations, translating into enhanced profitability and reduced Total Cost of Ownership (TCO). Customers benefit from real-time system diagnostics for their power supply as well as powerful system reliability-based decisions and quality assurance. The solution is easy to use and integrate into existing designs.
“The Power System Reliability Modeling represents a pivotal step for Infineon and its customers towards reliable and stable power supply in data centers,” said Adam White, Division President Power & Sensor Systems at Infineon. “Following our Product to System approach, the solution focuses on delivering hardware integrated with advanced software capabilities. This approach not only expands product capabilities and scope, but also empowers our customers to create more value and scale their operations faster.”
Further information about the solution is available at www.infineon.com/reliabilitymodeling.
Original – Infineon Technologies
