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onsemi has unveiled plans to acquire Qorvo’s Silicon Carbide (SiC) JFET business, a strategic move that enhances its portfolio in high- and mid-voltage power semiconductors. The $115 million deal includes Qorvo’s United Silicon Carbide subsidiary and is expected to close in Q1 2025. This acquisition is projected to expand onsemi’s market opportunity by $1.3 billion by 2030, focusing on AI, data centers, EVs, and industrial markets. By leveraging its vertically integrated SiC supply chain, onsemi aims to boost efficiency, profitability, and innovation across key technology areas.
SiC JFET technology offers superior power efficiency, reduced costs, and versatility in advanced applications, including EV battery systems, AI-driven data centers, and renewable energy solutions. It promises to disrupt traditional silicon-based and GaN technologies, with its superior switching speed, lower on-resistance, and smaller die size. This acquisition positions onsemi to capitalize on the growing demand for sustainable, high-performance power solutions in a wide range of industries.
Moreover, SiC JFETs are designed to enable transformative advancements in industrial applications such as power supplies, solar power converters, and energy storage systems. These innovations align with market trends emphasizing higher efficiency and reliability. The technology also offers critical advantages in EV battery safety, ensuring quicker response and long-term dependability through solid-state switches that surpass conventional electromechanical solutions.
By integrating Qorvo’s business, onsemi also strengthens its presence in the competitive AI and data center markets. The shift to higher voltages and power capacities in these areas provides a unique opportunity for SiC JFETs to reduce costs and improve performance, establishing onsemi as a leader in next-generation semiconductor solutions.
Original – onsemi
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ROHM and TSMC have entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications.
The partnership will integrate ROHM’s device development technology with TSMC’s industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
GaN power devices are currently used in consumer and industrial applications such as AC adapters and server power supplies. TSMC, a leader in sustainability and green manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for electric vehicles (EVs).
The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN™ series, including the 45W AC adapter (fast charger) “C4 Duo” produced by Innergie, a brand of Delta Electronics, Inc.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
Original – ROHM
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VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
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GlobalFoundries has received an additional $9.5 million in federal funding from the U.S. government to advance the manufacturing of GF’s essential gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont.
The funding moves GF closer to large-scale production of GaN chips. With the ability to handle high voltages and temperatures, GaN chip technology is essential for enabling higher performance and greater energy efficiency across a range of RF and high-power control applications including automobiles, datacenter, IoT, aerospace and defense.
With the award, GF will continue to add new tools, equipment and prototyping capabilities to its market-leading GaN IP portfolio and reliability testing as the company moves closer to full-scale manufacturing of its 200mm GaN chips in Vermont. GF is committed to creating a fast and efficient path for customers to realize new innovative designs and products that leverage the unique efficiency and power management benefits of GaN chip technology.
“GF is proud of its leadership in GaN chip technology, which is positioned to make game-changing advances across multiple end-markets and enable new generations of devices with more energy-efficient RF performance and faster-charging, longer-lasting batteries,” said Nicholas Sergeant, vice president of IoT and aerospace and defense at GF. “We appreciate the U.S. government’s partnership and ongoing support of our GaN program. Realizing full-scale GaN chip manufacturing will be a catalyst for innovation, for both our commercial and government partners, and will add resilience and strengthen the semiconductor supply chain.”
The new funding, awarded by the U.S. Department of Defense’s Trusted Access Program Office (TAPO), represents the latest federal investment to support GF’s GaN program in Vermont.
“This strategic investment in critical technologies strengthens our domestic ecosystem and national security, and ensures these assets are readily available and secure for DoD utilization. In concert with key partners, this approach fortifies defense systems, empowering resilience and responsiveness,” said Dr. Nicholas Martin, Director at Defense Microelectronics Activity.
In total, including the new award, GF has received more than $80 million since 2020 from the U.S. government to support research, development and advancements to pave the way to full-scale GaN chip manufacturing.
Vermont is a U.S.-accredited Trusted Foundry and the global hub of GF’s GaN program, with longstanding leadership in 200mm semiconductor manufacturing. In July 2024, GF acquired Tagore Technology’s Gallium Nitride Power portfolio and created the GF Kolkata Power Center in Kolkata, India. The center is closely aligned with and supports GF’s facility in Vermont, and is helping advance GF’s research, development and leadership in GaN chip manufacturing.
Original – GlobalFoundries
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VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC), the joint venture formed in September, 2024 by Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. celebrated breaking ground at the site of the joint venture’s new 300mm wafer manufacturing facility in Tampines, Singapore.
The groundbreaking ceremony was attended by customers, suppliers, partners, association representatives, residents, and government officials. Executives from VSMC, VIS and NXP were also present to commemorate the start of construction on the new facility, which is anticipated to begin initial production in 2027. VSMC was also honored to have Dr. Tan See Leng, Minister for Manpower and Second Minister for Trade and Industry, participate in the ceremony.
“Singapore is renowned not only as Asia’s economic hub but also as a beacon of technological innovation. We are proud to announce the groundbreaking of our first 12-inch fab in Singapore, which will uphold the company’s core business philosophy, provide specialty IC foundry services, and lay the foundation for our future development. This fab will advance the semiconductor industry and bolster the local high-tech sector. Designed with modern technology and guided by green manufacturing principles, the fab reflects our firm commitment to the future. VSMC is dedicated to being a responsible corporate citizen, supporting economic growth while ensuring environmental sustainability.”VSMC and VIS Chairman Leuh Fang
“I’m humbled and excited to see construction of VSMC’s 300mm fab moving forward very swiftly. NXP has enjoyed decades of successful semiconductor manufacturing operations in Singapore, and the new VSMC fab is entirely aligned with our differentiated hybrid manufacturing strategy. This new fab will support NXP’s growth plans with supply control and geographic resilience at competitive cost.”NXP President and CEO Kurt Sievers
“We welcome the decision by VIS and NXP to jointly establish VSMC and its greenfield 12-inch wafer fab in Singapore. This is testament to Singapore’s attractiveness to global companies to site advanced manufacturing activities, and reinforces Singapore’s position as a critical global node in the semiconductor supply chain. The new fab will not only create about 1,500 good jobs, it will also facilitate business and partnership opportunities for local enterprises. Singapore will continue to invest in talent development, R&D, and decarbonization solutions to enhance our competitiveness and strengthen Singapore’s semiconductor ecosystem.”Ms Cindy Koh, Executive Vice President, Singapore Economic Development Board
Construction of the VSMC fab is on-track, with initial production slated to begin in 2027. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending future business development by VIS and NXP. With an expected output of 55,000 300mm wafers per month in 2029, the joint venture will create approximately 1,500 jobs while contributing to the development of the upstream and downstream supply chains, contributing to Singapore and the global semiconductor ecosystem.
The fab will adopt a fully automated production model, integrating an Automated Material Handling System (AMHS) and comprehensive quality management through Artificial Intelligence applications. This will achieve fast, precise, high-yield, and high-quality manufacturing excellence, providing customers with competitive services and creating a smart fab in Singapore.
Addressing the company’s commitment to sustainability stewardship, the fab will be constructed in accordance with Singapore Green Mark standards and will incorporate rigorous green manufacturing measures. To help minimize environmental impact, the site will feature energy-efficient cooling and lighting systems, high degree of process water recycling, and the use of eco-friendly materials. In addition, several green office design principles will be integrated, such as ample natural light, abundant communal spaces, and lush greenery to foster and contribute to a culture of wellness.
On June 5, VIS and NXP announced plans to establish the VSMC joint venture in Singapore to build a 300mm wafer fab with a total investment of approximately $7.8 billion. On September 4, VIS and NXP announced the establishment of the VSMC joint venture, having obtained all necessary regulatory approvals from relevant authorities and injected capital to officially establish the VSMC joint venture. The joint venture marks a significant step to establishing geographic resilience and accelerating Singapore’s semiconductor ecosystem.
Original – NXP Semiconductors
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Ampere, the intelligent electric vehicle pure player born from Renault Group and STMicroelectronics announced the next step in their strategic co-operation, starting in 2026, with a multi-year agreement between STMicroelectronics and Renault Group on the supply of Silicon Carbide (SiC) power modules, as part of their collaboration on a powerbox for the inverter for Ampere’s ultra-efficient electric powertrain.
Ampere and STMicroelectronics worked together on the optimization of the power module, the key element in the powerbox, to get the highest performance and best competitiveness in the e-powertrain, leveraging Ampere’s expertise in EV technology and STMicroelectronics’ expertise in advanced power electronics.
“This agreement is the result of the intensive work carried out with STMicroelectronics. By working upstream together, we were able to optimize and secure the supply of key components for our electric powertrains, to offer high performance EVs with increased range and optimized charging time. It perfectly aligns with Ampere’s strategy to master the entire value chain of power electronics for its e-powertrain, leveraging STMicroelectronics’ expertise in power modules,” said Philippe Brunet, SVP Powertrain & EV engineering, Ampere.
“ST is at the cutting edge of the development of advanced power electronics enabling the mobility industry to improve the performance of electrified platforms. With the optimization of these higher-efficient products and solutions to meet Ampere’s performance requirements, and our vertically integrated silicon carbide supply chain, we are supporting Ampere’s strategy for its next generation of electric powertrain,” said Michael Anfang, Executive Vice President Sales & Marketing, Europe, Middle East and Africa Region, STMicroelectronics. “ST and Ampere share a common vision for more sustainable mobility and this agreement marks another step forward in improved power performance to further contribute to concrete improvements to carbon emissions reduction by the mobility industry and its supply chain.”
Power modules, composed of numerous silicon carbide chips, manage and convert electrical power from the battery to drive the electric motor. They play a crucial role in the efficiency of the electric powertrain and battery range, as well as energy regeneration features, making them a key element of the efficiency of an electric car. They also contribute to the smoothness and responsiveness of driving.
STMicroelectronics and Ampere have collaborated on a powerbox for the supply of energy to Ampere’s new generation of electric motors. The powerbox is designed for optimum performance-size ratio across Ampere’s line-up, on 400 Volt battery EV vehicles and for Segment C-EVs with 800 Volt batteries, enabling greater autonomy and faster charging. 800 Volts is one of the key levers to achieve the 10%-80% quick charge in 15 minutes or less. This agreement is fully aligned with Ampere’s strategy to master the entire value chain of the electric vehicle, particularly by working further upstream with its partners and ensuring the best efficiency at each step.
As an integrated device manufacturer (IDM), STMicroelectronics ensures quality and security of supply to serve carmakers’ strategies for electrification. The collaboration with Ampere on the silicon carbide power modules and powerbox demonstrates STMicroelectronics’ leadership and system level experience of advanced power electronics, including its packaging expertise.
Original – Ampere
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DENSO Corporation and Fuji Electric Co., Ltd. announced that a semiconductor supply plan submitted jointly by the companies has been approved by the Ministry of Economy, Trade and Industry. Under this plan, the companies will take part in joint investment and production of silicon carbide (SiC) power semiconductors to develop and strengthen frameworks for the supply of said semiconductors.
Power semiconductors are vital to the efficient supply of electric power. Demand for power semiconductors has been rising rapidly given that they are used in electrified vehicles, which are being adopted at an accelerated pace amid the push for the decarbonization of society. In comparison to prior silicon semiconductors, SiC power semiconductors are able to deliver superior performance under high temperature, high-frequency, and high-voltage conditions.
These devices are therefore anticipated to make large contributions to reductions in power loses as well as to more compact and lighter-weight designs for battery electric vehicle systems and other power electronics. Accordingly, growth in demand is projected for SiC power semiconductors.
In response to electrification trends, DENSO has advanced SiC technology development projects targeting increased quality and efficiency in relation to everything from wafers and element devices to modules and inverters. Meanwhile, Fuji Electric has constructed extensive frameworks encompassing all tasks spanning from the development of SiC power semiconductor elements that enable increased efficiency and more compact designs for power electronics equipment to mass production of the related modules.
Based on the approved plan, these companies will combine their respective automotive product development and production technology capabilities in a joint effort to expand their capacity for the efficient and stable supply of SiC power semiconductors throughout Japan.
Through this partnership, the companies will contribute to the development of semiconductor supply frameworks within Japan and to the improvement of the international competitiveness of Japan’s domestic semiconductor and automotive industries. In addition, this partnership is anticipated to help advance the decarbonization of society.
Original – Fuji Electric
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Valeo, a leading automotive technology company, and ROHM Semiconductor collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.
Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.
Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.
“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”
“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.
These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.
Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.
Original – ROHM
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Stellantis N.V. and Infineon Technologies AG will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.
To support this, the companies have signed major supply and capacity agreements that will serve as the foundation for the planned collaboration to develop the next generation of power architecture, including:
- Infineon’s PROFET™ smart power switches, which will replace traditional fuses, reduce wiring and enable Stellantis to become one of the first automakers to implement intelligent power network management.
- Silicon carbide (SiC) semiconductors, which will support Stellantis in its efforts to standardize its power modules, improve the performance and efficiency of EVs while also reducing costs.
- AURIX TM microcontrollers, which target the first generation of the STLA Brain zonal architecture.
Stellantis and Infineon are also in the process of extending their cooperation with the implementation of a Joint Power Lab to define the next-generation scalable and intelligent power architecture enabling Stellantis’ software-defined vehicle.
“As outlined in our strategic plan, Dare Forward 2030, we are securing the supply of crucial semiconductor solutions required to continue our transition to an electrified future leveraging innovative E/E architectures for our next-generation platforms,” said Maxime Picat, Stellantis Chief Purchasing and Supplier Quality Officer.
“Infineon is now entering a collaboration and innovation partnership with Stellantis,” said Peter Schiefer, President of Infineon’s Automotive Division. “As the world’s leading automotive semiconductor vendor, we bring our product-to-system expertise and dependable electronics to the table. Our semiconductors drive the decarbonization and digitalization of mobility. They increase the efficiency of cars and enable software-defined architectures that will significantly improve the user experience.”
With the world`s most cost-competitive SiC fab in Kulim, Malaysia, the upcoming 300-millimeter ”Smart Power Fab” in Dresden, Germany, and the joint venture with TSMC and partners (ESMC) as well as accompanying supply agreements with foundry partners, Infineon is ready to fully meet market demand for automotive semiconductor solutions. According to the market research company TechInsights, Infineon is the global number one supplier of automotive microcontrollers with a market share of about 29 percent of the global automotive microcontroller market.
Original – Infineon Technologies
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U.S. Senators Gary Peters (MI) and Debbie Stabenow (MI) announced Hemlock Semiconductor (HSC) will receive up to $325 million in federal funding to build a new, state-of-the-art manufacturing facility on its existing campus in Hemlock, Michigan. The new facility will allow the company to expand production of hyper-pure polysilicon needed to manufacture semiconductor chips, which are used to make a wide variety of products including vehicles, cell phones, washing machines, medical devices, agricultural equipment, solar panels, and defense technologies.
The funding comes from the CHIPS and Science Act, legislation Peters and Stabenow helped craft and pass into law to boost U.S. production of semiconductor chips, create American jobs, and strengthen U.S. national security by lessening our dependence on foreign companies for these critical technologies. This investment is expected to create 180 good-paying manufacturing jobs, as well as thousands of construction jobs, in Michigan.
Hemlock Semiconductor (HSC) is the nation’s leading producer of hyper-pure polysilicon for the semiconductor and solar industries and one of only five companies in the world capable of producing the highest quality polysilicon for semiconductor chips.
“In Michigan, our workers know how to make things well and with precision. That’s why I’m thrilled to announce this major investment that is going to keep Michigan at the forefront of advanced manufacturing, nationally and globally, and create thousands of good-paying jobs in our state,” said Senator Peters. “As one of just five companies worldwide and the only company headquartered in the U.S. that produces hyper-pure polysilicon for semiconductors, Hemlock Semiconductor plays a critical role in both our economy and national security. I’m proud to have authored the provision in the CHIPS and Science Act that ensured HSC would be eligible for this grant and have since continued to advocate for HSC as they work to ramp up production here at home. This funding will be a catalyst to that effort.”
“Michigan knows all too well what happens when we are dependent on semiconductor chips made halfway around the world. That’s why, as part of the CHIPS and Science Act, I led the effort with Senator Peters and Representative Kildee to make sure semiconductor chips are manufacturing here in the United States and there is no better place to make them than Michigan. This important federal investment will boost Michigan manufacturing, fix our broken supply chains, lower costs, and bring jobs home,” said Senator Stabenow. “I applaud Hemlock Semiconductor’s leadership in semiconductor manufacturing and improving our supply chains.”
“HSC is proud to be a manufacturing powerhouse for two vital industries of the future—semiconductor and solar. Bolstered by the CHIPS Act, we are planning for a once-in-a-generation investment in advanced technologies to continue serving as a top polysilicon supplier to the leading-edge semiconductor market,” said HSC Chairman and CEO AB Ghosh. “Our customers want high quality and sustainably made polysilicon. This proposed investment demonstrates that the Biden-Harris Administration, Governor Whitmer and our Michigan congressional champions understand HSC’s unique ability to meet those demands and our crucial role in strengthening American interests. As the United States works to reshore critical supply chains, we hope to make additional investments.”
Peters and Stabenow have made strengthening American manufacturing and securing domestic supply chains a top priority. The CHIPS and Science Act includes a provision Peters and Stabenow authored to support the domestic production of mature semiconductor technologies and ensure that projects supporting critical manufacturing industries are given priority status, which would include the automotive sector. This is in addition to $50 billion already in the bill to incentivize U.S. production of all types of semiconductors – for a total of $52 billion.
The CHIPS and Science Act also included Peters’ bipartisan Investing in Domestic Semiconductor Manufacturing Act, which ensures federal incentives to boost domestic semiconductor manufacturing include U.S. suppliers that produce the materials and manufacturing equipment that enable semiconductor manufacturing – including HSC. This provision authored by Peters ensured HSC would be eligible for the grant funding announced today. The CHIPS and Science Act additionally authorized increased funding for the Manufacturing Extension Partnership (MEP) program, which has been a priority for Peters and Stabenow.
Last year, the Senate unanimously passed Peters’ bipartisan legislation to strengthen federal efforts to expand domestic manufacturing of semiconductor chips. Peters’ Securing Semiconductor Supply Chains Act would direct the U.S. Department of Commerce’s SelectUSA program, in collaboration with other federal agencies and state economic development organizations, to develop strategies that would attract investment in U.S. semiconductor manufacturers and supply chains.
Original – Hemlock Semiconductor
