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TSMC, Robert Bosch GmbH, Infineon Technologies AG, and NXP Semiconductors N.V. announced a plan to jointly invest in European Semiconductor Manufacturing Company (ESMC) GmbH, in Dresden, Germany to provide advanced semiconductor manufacturing services. ESMC marks a significant step towards construction of a 300 mm fab to support the future capacity needs of the fast-growing automotive and industrial sectors, with the final investment decision pending confirmation of the level of public funding for this project. The project is planned under the framework of the European Chips Act.
The planned fab is expected to have a monthly production capacity of 40,000 300 mm (12-inch) wafers on TSMC’s 28/22 nanometer planar CMOS and 16/12 nanometer FinFET process technology, further strengthening Europe’s semiconductor manufacturing ecosystem with advanced FinFET transistor technology and creating about 2,000 direct high-tech professional jobs. ESMC aims to begin construction of the fab in the second half of 2024 with production targeted to begin by the end of 2027.
The planned joint venture will be 70 percent owned by TSMC, with Bosch, Infineon, and NXP each holding 10 percent equity stake, subject to regulatory approvals and other conditions. Total investments are expected to exceed 10 billion euros consisting of equity injection, debt borrowing, and strong support from the European Union and German government. The fab will be operated by TSMC.
“This investment in Dresden demonstrates TSMC’s commitment to serving our customers’ strategic capacity and technology needs, and we are excited at this opportunity to deepen our long-standing partnership with Bosch, Infineon, and NXP,” said Dr. CC Wei, Chief Executive Officer of TSMC. “Europe is a highly promising place for semiconductor innovation, particularly in the automotive and industrial fields, and we look forward to bringing those innovations to life on our advanced silicon technology with the talent in Europe.”
Dr. Stefan Hartung, chairman of the Bosch board of management: “Semiconductors are not only a crucial success factor for Bosch. Their reliable availability is also of great importance for the success of the global automotive industry. Apart from continuously expanding our own manufacturing facilities, we further secure our supply chains as an automotive supplier through close cooperation with our partners. With TSMC, we are pleased to gain a global innovation leader to strengthen the semiconductor ecosystem in the direct vicinity of our semiconductor plant in Dresden.”
“Semiconductors are not only a crucial success factor for Bosch. Their reliable availability is also of great importance for the success of the global automotive industry. Apart from continuously expanding our own manufacturing facilities, we further secure our supply chains as an automotive supplier through close cooperation with our partners. With TSMC, we are pleased to gain a global innovation leader to strengthen the semiconductor ecosystem in the direct vicinity of our semiconductor plant in Dresden.”said Dr. Stefan Hartung, chairman of the Bosch board of management
“Our joint investment is an important milestone to bolster the European semiconductor ecosystem. With this, Dresden is strengthening its position as one of the world’s most important semiconductor hubs that is already home to Infineon’s largest frontend site,” said Jochen Hanebeck, CEO of Infineon Technologies. “Infineon will use the new capacity to serve the growing demand particularly of its European customers, especially in automotive and IoT. The advanced capabilities will provide a basis for developing innovative technologies, products and solutions to address the global challenges of decarbonization and digitalisation.”
“NXP is very committed to strengthening innovation and supply chain resilience in Europe,” said Kurt Sievers, President and CEO of NXP Semiconductors. “We thank the European Union, Germany, and the Free State of Saxony for their recognition of the semiconductor industry’s critical role and for their true commitment to boost Europe’s chip ecosystem. The construction of this new and significant semiconductor foundry will add much needed innovation and capacity for the range of silicon required to supply the sharply increasing digitalization and electrification of the automotive and industrial sectors.”
Original – Bosch
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Semiconductor industry players Robert Bosch GmbH, Infineon Technologies AG, Nordic Semiconductor, NXP® Semiconductors, and Qualcomm Technologies, Inc., have come together to jointly invest in a company aimed at advancing the adoption of RISC-V globally by enabling next-generation hardware development.
Formed in Germany, this company will aim to accelerate the commercialization of future products based on the open-source RISC-V architecture. The company will be a single source to enable compatible RISC-V based products, provide reference architectures, and help establish solutions widely used in the industry. Initial application focus will be automotive, but with an eventual expansion to include mobile and IoT.
At its core, RISC-V encourages innovation, allowing any company to develop cutting-edge, customized hardware based on an open-source instruction set. Further adoption of the RISC-V technology will promote even more diversity in the electronics industry – reducing the barriers to entry for smaller and emergent companies and enabling increased scalability for established companies.
The company calls on industry associations, leaders, and governments, to join forces in support of this initiative which will help increase the resilience of the broader semiconductor ecosystem.
The company formation will be subject to regulatory approvals in various jurisdictions.
- Robert Bosch GmbH
“Bosch is convinced that initiatives promoting the RISC-V open specifications will bring the global mobility market a significant step further. The initiative now planned will greatly help to establish a reliable and efficient EU-based semiconductor ecosystem,” said Jens Fabrowsky, Executive Vice President at Bosch and responsible for the semiconductor business.
- Infineon Technologies AG
“As vehicles become software-defined and dependability requirements increase due to electrification and connectivity, for example, as well as through trends like autonomous driving, there is a general need for standardization and ecosystem compatibility across the industry, with CPUs being a key IP. We are proud to support the establishment of trusted RISC-V based automotive products with this initiative. The knowledge and expertise of leading market players will unleash the full potential of RISC-V in the automotive sector,” said Peter Schiefer, Division President of Infineon’s Automotive Division.
- Nordic Semiconductor
“Nordic Semiconductor is a committed and enthusiastic supporter of the RISC-V initiative and stands ready to drive the project forward. Nordic’s IoT solutions represent the leading edge of low power wireless technology and to retain that position it’s critical we maintain continuous access to efficient and powerful embedded microprocessors. An open collaboration with like-minded companies to continually enhance innovative RISC-V microprocessor IP and ensure a robust and reliable supply of the technology is the ideal answer to this challenge,” said Svein-Egil Nielsen, CTO/EVP R&D and Strategy, Nordic Semiconductor.
- NXP Semiconductors
“NXP is proud to be part of a new EU-based joint endeavor to pioneer fully certified RISC-V-based IP and architectures, initially for the automotive industry. The creation of a one-stop-shop ecosystem where customers can select turnkey assets will strengthen the adoption of RISC-V across many European industries,” said Lars Reger, Executive Vice President and Chief Technology Officer at NXP Semiconductors. “We thank the Artificial Intelligence Center Hamburg (ARIC) e.V. for their support of this collaboration.”
- Qualcomm Technologies, Inc.
“We are excited to come together with other industry players to drive the expansion of the RISC-V ecosystem through development of next-generation hardware. Qualcomm Technologies has been investing in RISC-V for more than five years and we’ve integrated RISC-V micro-controllers into many of our commercial platforms. We believe RISC-V’s open-source instruction set will increase innovation and has the potential to transform the industry,” Ziad Asghar, Senior Vice President of Product Management, Qualcomm Technologies, Inc.
Original – Infineon Technologies
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The decarbonization trend will result in strong market growth for power semiconductors, in particular those based on wide bandgap materials. As a leader in Power Systems, Infineon Technologies AG is now taking a further, decisive step to shape this market: By significantly expanding its Kulim fab – over and above the original investment announced in February 2022 – Infineon will build the world’s largest 200-millimeter SiC (silicon carbide) Power Fab. The planned expansion is backed by customer commitments covering about five billion euros of new design-wins in automotive and industrial applications as well as about one billion euros in pre-payments.
Over the next five years Infineon will additionally invest up to five billion euros in Kulim during a second construction phase for Module Three. The investment will lead to an annual SiC revenue potential of about seven billion euros by the end of the decade, together with the planned 200-millimeter SiC conversion of Villach and Kulim. This highly competitive manufacturing base will support Infineon’s SiC market share target of 30% towards the end of the decade. Infineon is confident that the company’s SiC revenue in the fiscal year 2025 will come in ahead of the target of one billion euros.
“The market for silicon carbide shows accelerating growth, not only in automotive but also in a broad range of industrial applications such as solar, energy storage and high-power EV charging. With the Kulim expansion, we will secure our leadership position in this market,” said Jochen Hanebeck, CEO of Infineon. “With the industry’s leading scale and a unique cost position, we are leveraging our competitive position of best-in-class SiC trench technology, the broadest package portfolio and unrivaled application understanding. These factors are the areas of differentiation and success in the industry.”
Infineon has been awarded new design wins of about five billion euros along with about one billion euros in prepayments from existing and new customers: In the automotive sector this includes six OEMs, three of them from China. Among the customers are Ford, SAIC and Chery. In the area of renewable energies customers include SolarEdge and three leading Chinese photovoltaic and energy storage systems companies.
In addition, Infineon and Schneider Electric agreed on a capacity reservation including prepayments for power products based on silicon and silicon carbide. Infineon and the respective customers will provide more details in separate announcements in the near future. The prepayments will contribute positively to Infineon’s cash flow in the coming years and shall be fully repaid in connection with the agreed sales volumes by 2030 at the latest.
The Right Honourable Dato’ Seri Anwar bin Ibrahim, Prime Minister of Malaysia, expressed his appreciation for Infineon’s commitment to creating a significant wide bandgap hub in the country. “Malaysia is putting in maximum efforts to meet its national target to decarbonize its economy and achieve net zero by 2050. Malaysia’s continued appeal as a preferred investment destination comes with a well-established landscape for developing innovative and sustainable technologies. In this vein, Infineon’s vision on green technology and sustainability puts it right at home in Malaysia.
Infineon and other well-established German corporations’ continued faith in Malaysia is a vote of confidence in Malaysia’s new economic growth agenda premised on inclusivity and sustainability, enabled by strong policies on knowledge transfer, quality investments, business enablement and socio-economic well-being based on equitable sharing of the nation’s wealth.”
The Minister of Investment, Trade and Industry (MITI), His Hon. Tengku Datuk Seri Utama Zafrul Aziz lauded Infineon’s expansion and said, “Infineon’s expansion of their world-class silicon carbide facility in Kulim marks a significant milestone in Malaysia’s pursuit of developing advanced manufacturing capabilities, creating high-skilled employment opportunities and positioning the country at the forefront of enabling green technologies, which are crucial to achieving our global sustainable development goals.
The innovative power semiconductor technologies manufactured in the SiC Power Fab will also bolster Malaysia’s position as a key player in the world’s semiconductor ecosystem, with a growing role specifically in the sustainable technology supply chain. I am heartened by Infineon’s sharing of Malaysia’s commitment to address the impact of climate change and I look forward to our long-term partnership for the further development of Malaysia’s green technologies ecosystem.”
Sustainability is a key element in the planning, construction and operation of the fab. The building is designed in a way that allows Infineon to make responsible use of resources such as electricity and water.
Original – Infineon Technologies
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The European Commission has approved the “Important Project of Common European Interest on Microelectronics and Communication Technologies” (IPCEI-ME/CT) with the aim of initiating complex and investment-intensive projects that could not otherwise be realized. This involves 68 projects from 14 member states – and two of those comes from Semikron Danfoss.
Semikron Danfoss is planning the further development of diodes based on thin-wafer technology and the development of a new edge structure – as well as the establishment of automotive module production based on Direct Press Die technology in Nuremberg, a continuation of the activities from the IPCEI on Microelectronics project. And in Slovakia, development activities and an expansion of production for industrial modules are planned.
Projects funded under the IPCEI -ME/CT will enable the development of new technologies and products that will make a decisive contribution to the further reduction of CO2 emissions and will secure growth and jobs in Europe. The Semikron Danfoss projects address the objectives of the European Union to strengthen competitiveness and security of supply in key technologies for both the digital and the green transformation process.
Power semiconductors are an important multiplier along the value chain of many products. The projects also aim to expand European cooperation with universities and research institutes as well as suppliers. The member states are now starting the implementation process and will determine the requirements of the projects based on the EU decision. Thanks to the prior approval of the early start of the initiatives, the projects have already been launched. The official funding commitment from the federal government and the state of Bavaria is expected shortly for Germany.
Original – Semikron Danfoss
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Power semiconductors companies continue to invest heavily in new factories, production capacity expansions, and R&D centers. Thus, recently the total value of the active investment projects launched since 2021 has surpassed 70 billion USD.
Driven by the pandemic and geopolitics, major power semiconductors companies started to invest more in new factories and joint ventures to have more confidence in their own supply chain in the future.
As of today, it is obvious to see the major split of power semiconductors into three geographical regions – the USA, Europe, and Asia. Asia may as well be divided into several regions with China being the leading investor of all.
Despite the ongoing tensions and export restrictions between the US, Europe, and China related to advanced semiconductors, when it comes to power semiconductors European companies continue to invest in the Chinese market expanding their product capacity or establishing new joint ventures like STMicroelectronics and Sanan Optoelectronics did recently.
Even with some delay, Japanese companies like ROHM, Mitsubishi Electric, Fuji Electric, Renesas Electronics, Toshiba, and others, pushed by their US and European competitors, announced their own projects aimed to secure the capacity on the wafer and device level to correspond to the growing demand for Si and SiC based power semiconductors coming from the electric vehicle and charging, photovoltaics, battery energy storage systems, and the other emerging applications.
If we take a closer look at all projects announced, SiC is the leading technology with over 60% of total investment. Over 25 market leaders announced their plans to invest in silicon carbide.
Thus, ROHM is investing in new production to multiply its SiC capacity in the coming years. Mitsubishi Electric teams up with Coherent to scale manufacturing of SiC power devices on a 200 mm SiC technology platform as one of the steps of their 260 billion yen investment project planned till March 2026.
Infineon Technologies continues to bet on both local European and Asian markets investing in their new fab in Dresden and expanding backend operations in Indonesia. STMicroelectronics continues to invest in WBG semiconductors with the ongoing construction of a new wafer fab in Sicily announced in 2022.
With a global total number of new investment projects of over 80, the US companies Wolfspeed, onsemi, and Microchip Technology, similar to their European counterparts, invest locally, in Europe and Asian markets. Totally the US semiconductor companies announced new projects valued at almost 9 billion USD.
With the US and EU Chips Acts, and similar initiatives in China, Japan, South Korea, and some other countries, it is clear that the investment into power semiconductors industry will continue to reach 100 billion USD soon.
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onsemi and BorgWarner Inc. announced the two companies are expanding their strategic collaboration for silicon carbide (SiC), making the total agreement worth over $1 billion in lifetime value. BorgWarner plans to integrate onsemi EliteSiC 1200 V and 750 V power devices into its VIPER power modules. The EliteSiC devices join a broad portfolio of onsemi products that are part of the long-standing strategic relationship between the two companies.
onsemi provides high-performance EliteSiC technology while maintaining the high standards of quality, reliability and supply assurance needed for the EV traction market. onsemi’s decades of experience in the design, development and manufacturing of power semiconductor products support successful adoption in high-volume automotive applications.
“First and foremost, onsemi’s continuous and strategic investment in ramping SiC manufacturing capacity across its end-to-end supply chain gives us confidence in our ability to support the increasing demand for our solutions, now and in the future,” said Stefan Demmerle, Vice President of BorgWarner Inc. and President and General Manager, PowerDrive Systems.
BorgWarner’s silicon carbide traction inverters already offer higher efficiency, better cooling performance, and faster-charging rates in a more compact package than other options for EVs. By using EliteSiC technology, BorgWarner’s solutions expect to benefit from increased power density and higher efficiency, which increase the range and overall performance of EVs.
“The integration of EliteSiC technology in the traction inverter enables increased gas-equivalent miles per gallon (MPGe), which helps alleviate range anxiety – one of the key barriers to EV adoption,” said Simon Keeton, Executive Vice President and General Manager, Power Solutions Group, onsemi. “With onsemi’s chip-to-system level support and a track record of execution, we are able to provide industry-leading SiC-based solutions to BorgWarner at an accelerated pace to support its go-to-market requirements.”
Original – onsemi
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Cars with fully or partially electrified drivetrains will account for two thirds of cars produced by 2028, as per analyst forecasts. This rapid growth of electromobility is driving the demand for power semiconductors. Against this background, Infineon Technologies AG and Semikron Danfoss have signed a multi-year volume agreement for the supply of silicon-based electromobility chips.
Infineon will supply chipsets consisting of IGBTs and diodes to Semikron Danfoss. These chips are mainly used in power modules for inverters, which are used for the main drive in electric vehicles.
“As the global leader in automotive semiconductors, Infineon enables game-changing solutions for clean and safe mobility. Already today, our IGBTs and diodes play a major role in the industry’s electromobility transformation by enabling efficient power conversion in the electric powertrain,” said Peter Schiefer, President of Infineon’s Automotive division. “Our broad product portfolio, system expertise and continuous investment in our manufacturing capabilities make us a valued partner of automotive players like Semikron Danfoss.”
Claus A. Petersen, President of Semikron Danfoss added: “Semikron Danfoss provides automotive customers with power modules based on the most advanced assembly technologies that fully exploit the capabilities of IGBTs and diodes to enable further decarbonization of the transportation sector. Automotive customers trust us as an experienced long-term partner to drive the transformation in the industry.”
The IGBTs and diodes for Semikron Danfoss will be manufactured by Infineon at its sites in Dresden, Germany, and Kulim, Malaysia. Semikron Danfoss manufactures its own automotive power modules in Nuremberg and Flensburg in Germany, in Utica, US, and as of next year, in Nanjing, China.
Original – Semikron Danfoss
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ROHM has reached a basic agreement with Solar Frontier K.K. to acquire the assets of Solar Frontier’s former Kunitomi Plant, located in Japan. The acquisition is scheduled to take place in October 2023 and will belong to the ROHM Group’s main production bases.
The role of semiconductors, one of ROHM’s core business fields is becoming increasingly important to achieving a decarbonized society.
In particular, the automotive and industrial equipment markets are undergoing technological innovation such as electrification in order to reduce environmental impact and achieve carbon neutrality. With this, the demand is increasing – especially for power and analog semiconductors.
As further expansion of the semiconductor market is expected, the ROHM Group intends to expand its production capacity continuously, particularly for silicon carbide (SiC) power devices, and ensure a stable supply to ROHM’s customers.
Original – ROHM
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DISCO Corporation opened a new mid-process research center on July 1, 2023.
As the wafers on which circuits are built in the front-end process of semiconductor manufacturing have extremely high added-value, high yield is required in the processes that follow. Among these processes, in the grinding (wafer thinning) and dicing (wafer singulation through cutting) processes handled by DISCO, there is a risk that one processing failure may cause the entire wafer’s quality to deteriorate.
Therefore, caution and accuracy are required for operations such as processing and transfer in particular. In addition, if a large number of defects occur in the back-end process, most of the time, alternative wafers cannot immediately be supplied from the front-end process. As a result, this may have a significant impact on the entire supply chain and become a large issue in the lean manufacturing of the automotive industry.
Recognizing these issues, DISCO has newly positioned these processes that are conventionally in the back-end process of semiconductor manufacturing as part of the “mid-process,” and has been proceeding with R&D in this area.
DISCO has officially established the mid-process research center as a site to conduct R&D for the mid-process and perform demonstrations for customers. This center has permanent installations of the wafer transfer system RoofWay as well as the cluster system MUSUBI, and research is underway to reduce the equipment operator’s responsibilities and improve semiconductor wafer processing and transfer quality through automation of the production system.
As semiconductor use in automotive applications is increasing, stricter quality management is being required for semiconductors as well, as they are responsible for the user’s life. Therefore, through this center, DISCO will aim at realizing a production system that eliminates operator intervention as much as possible in order to reduce quality variation that arises from human involvement.
The mid-process research center is a facility that makes verification of unmmaned processes possible by connecting a series of processes with a fully automatic transfer robot. The processes include thinning using a grinder, singulation using dicing saws and laser saws, and pickup, inspection, and measurement of die.
The mid-process research center has been partially open since December 2021, and during the time until the official opening, DISCO has been improving the level of the system by incorporating the valuable opinions of some of the invited customers. Now, as some time has passed from when the category of COVID-19 was downgraded and reclassified as a level 5 infectious disease, DISCO felt that it was finally possible to proactively welcome visitors to the center, and thus decided to make an official announcement for the opening of the center.
Original – DISCO
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Renesas Electronics Corporation and Wolfspeed, Inc. announced the execution of a wafer supply agreement and $2 billion (USD) deposit by Renesas to secure a 10 year supply commitment of silicon carbide bare and epitaxial wafers from Wolfspeed. The supply of high-quality silicon carbide wafers from Wolfspeed will pave the way for Renesas to scale production of silicon carbide power semiconductors starting in 2025. The signing ceremony of the agreement was held at Renesas’ headquarters in Tokyo between Hidetoshi Shibata, President and CEO of Renesas, and Gregg Lowe, President and CEO of Wolfspeed.
The decade-long supply agreement calls for Wolfspeed to provide Renesas with 150mm silicon carbide bare and epitaxial wafers scaling in CY2025, reinforcing the companies’ vision for an industry-wide transition from silicon to silicon carbide semiconductor power devices. The agreement also anticipates supplying Renesas with 200mm silicon carbide bare and epitaxial wafers after the recently announced John Palmour Manufacturing Center for Silicon Carbide (the “JP”) is fully operational.
The need for more efficient power semiconductors, which supply and manage electricity, is dramatically increasing throughout automotive and industrial applications, spurred by the growth of electric vehicles (EVs) and renewable energy. Renesas is moving quickly to address the growing demand for power semiconductors by expanding its in-house manufacturing capacity. The company recently announced the restart of its Kofu Factory to produce IGBTs, and establishment of a silicon carbide production line at its Takasaki Factory.
Compared to conventional silicon power semiconductors, silicon carbide devices enable higher energy efficiency, greater power density and a lower system cost. In an increasingly energy-conscious world, the adoption of silicon carbide is becoming ever more pervasive across multiple high-volume applications spanning EVs, renewable energy and storage, charging infrastructure, industrial power supplies, traction and variable speed drives.
“The wafer supply agreement with Wolfspeed will provide Renesas with a stable, long-term supply base of high-quality silicon carbide wafers. This empowers Renesas to scale our power semiconductor offerings to better serve customers’ vast array of applications,” said Hidetoshi Shibata, President and CEO of Renesas. “We are now poised to elevate ourselves as a key player in the accelerating silicon carbide market.”
“With the steepening demand for silicon carbide across the automotive, industrial and energy sectors, it’s critically important we have best-in-class power semiconductor customers like Renesas to help lead the global transition from silicon to silicon carbide,” said Gregg Lowe, President and CEO of Wolfspeed. “For more than 35 years, Wolfspeed has focused on producing silicon carbide wafers and high-quality power devices, and this relationship marks an important step in our mission to save the world energy.”
The Renesas $2 billion deposit will help support Wolfspeed’s ongoing capacity construction projects including the JP, the world’s largest silicon carbide materials factory in Chatham County, North Carolina. The state-of-the-art, multi-billion-dollar facility is targeted to generate a more than 10-fold increase from Wolfspeed’s current silicon carbide production capacity on its Durham, North Carolina campus. The facility will produce primarily 200mm silicon carbide wafers, which are 1.7x larger than 150mm wafers, translating into more chips per wafer and ultimately, lower device costs.
Original – Renesas Electronics
