• Siltronic Inaugurated One of the World’s Most Advanced Wafer Fabs

    Siltronic Inaugurated One of the World’s Most Advanced Wafer Fabs

    3 Min Read

    June 12 marked a milestone in the history of Siltronic AG: after more than 500 construction days and roughly 23 million working hours, Siltronic inaugurated one of the world’s most advanced wafer fabs. The inauguration of the new production facility, which is one of the most modern and cost-efficient of its kind, took place in Singapore.

    The highly automated fab at JTC’s Tampines Wafer Fab Park was officially opened in the presence of around 150 guests, including numerous high-ranking representatives of the Singaporean government, customers and suppliers. Singapore’s Deputy Prime Minister Heng Swee Keat was the Guest of Honour to grace the occasion. The fab was commissioned at the beginning of 2024 and will now be ramped to full capacity over several years.

    “With our new fab, we will accompany the future growth of the wafer industry for many years to come and take Siltronic to a new level. What the entire team, including all business partners, has achieved is a masterpiece, and I would like to thank everyone for their outstanding contribution,” said Dr. Michael Heckmeier, CEO of Siltronic AG, in his speech.

    Ms. Jacqueline Poh, Managing Director of Singapore Economic Board (EDB) said: “We are proud of our long-standing partnership with Siltronic. As one of top 5 global wafer suppliers, Siltronic’s new fab is a significant expansion that not only supplies to Singapore’s semiconductor industry but also strengthens the resilience of the global semiconductor supply chain. This investment will create good jobs and further grow the existing collaboration that Siltronic has with local suppliers in automation and precision components.”

    The success story of Siltronic in Singapore began in 1997 with the founding of Siltronic Singapore Pte. Ltd. in JTC’s Tampines Wafer Fab Park. The first 200 mm wafers were produced as early as 1999. This was followed in 2006 by the establishment of a joint venture with Samsung and the start of construction of the first 300 mm fab, from which the first wafers were delivered to customers in 2008. The foundation stone for the second 300 mm fab was laid in 2021, and it was officially opened today. Singapore is Siltronic’s largest production site.

    Today’s inauguration of the state-of-the-art wafer fab in Singapore is not only the largest investment in Siltronic’s history, but also a milestone of which Siltronic is extremely proud. With its high level of automation and impressive efficiency, the fab sets new standards in our industry and strengthens Siltronic’s position as one of the world’s leading wafer manufacturers.

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  • Semikron Danfoss and Vincotech Renew Cooperation Agreement for MiniSKiiP Packaging

    Semikron Danfoss and Vincotech Renew Cooperation Agreement for MiniSKiiP Packaging

    2 Min Read

    Semikron Danfoss and Vincotech announced the renewal of their cooperation agreement for power semiconductor module packaging. The two enterprise’s alliance, dating back to 2003, has been extended to further strengthen MiniSKiiP packaging technology.

    This move underscores Semikron Danfoss and Vincotech’s commitment to advancing MiniSKiiP and delivering cutting-edge solutions that meet the needs of the power electronics industry.

    “The partnership with Vincotech is key to ensuring the safe supply of our number one motor drive module MiniSKiiP to our customers,” said Peter Sontheimer, Senior Vice President Industry Division at Semikron Danfoss. “We strongly believe that this type of arrangement is beneficial to the long-term health of the power electronics supply chain.”

    Multiple source options for the package to further mitigate the supply chain risk, as well as standards-compliant design, are just a few of the benefits of this renewed cooperation agreement. Engineered for easy assembly and featuring service-friendly spring contacts, MiniSKiiP’s unique hardware has earned an excellent reputation for efficiency and performance in general purpose and servo motor drives.

    “We are delighted to be renewing our partnership with Semikron Danfoss for the MiniSKiiP package technology,” said Edoardo Guiotto, VP Sales & Marketing at Vincotech. “This agreement reaffirms our dedication to deliver premium products to our customers and drive innovation and advances in power electronics.”

    Semikron Danfoss and Vincotech are now set to take MiniSKiiP’s reliability and standardization to the next level. Customers can look forward this technology bringing even greater robustness, versatility, and compatibility to their products.

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  • NXP Semiconductors and Vanguard International Semiconductor to Establish a Joint Venture to Build and Operate a 300mm Fab

    NXP Semiconductors and Vanguard International Semiconductor to Establish a Joint Venture to Build and Operate a 300mm Fab

    3 Min Read

    Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. announced the plan to create a manufacturing joint-venture VisionPower Semiconductor Manufacturing Company Pte Ltd (“VSMC”) which will build a new 300mm semiconductor wafer manufacturing facility in Singapore.

    The joint-venture fab will support 130nm to 40nm mixed-signal, power management and analog products, targeting the automotive, industrial, consumer and mobile end markets. The underlying process technologies are planned to be licensed and transferred to the joint venture from TSMC.

    The joint venture will begin construction of the initial phase of the wafer fab in the second half of 2024, pending receipt of all required regulatory approvals, with initial production available to customers during 2027. The joint venture will operate as an independent, commercial foundry supplier, providing assured proportional capacity to both equity partners, with an expected output of 55,000 300mm wafers per month in 2029. The joint venture will create approximately 1,500 jobs in Singapore. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending commitments by both equity partners.

    The total cost of the initial build out is anticipated to be $7.8 billion. VIS will inject $2.4 billion representing a 60 percent equity position in the joint venture and NXP will inject $1.6 billion for the remaining 40 percent equity position. VIS and NXP have agreed to contribute an additional $1.9 billion which will be utilized to support the long-term capacity infrastructure. The remaining funding including loans will be provided by third parties to the joint venture. The fab will be operated by VIS.

    “VIS is pleased to work with leading global semiconductor company NXP to build our first 300mm fab. This project aligns with our long-term development strategies, demonstrating VIS’ commitment to meeting customer demands, and diversifying our manufacturing capabilities,” said VIS Chairman Leuh Fang. “Adhering to the vision of business sustainability, this fab will be built adopting the Singapore Green Mark standards and implementing rigorous green manufacturing measures. We will continue to create great value for our stakeholders and look forward to working with customers, suppliers, local talents, and government to continuously contribute to Singapore and the global semiconductor ecosystem.”

    “NXP continues to take proactive actions to ensure it has a manufacturing base which provides competitive cost, supply control, and geographic resilience to support our long-term growth objectives,” said Kurt Sievers, NXP President and CEO. “We believe VIS is well suited and fully understands the complexities involved in building and operating together with NXP a 300mm analog mixed signal fab. The joint venture partnership we intend to create with VIS perfectly aligns within NXP’s hybrid manufacturing strategy.”

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  • ElevATE Semiconductor and GlobalFoundries Partner for High-Voltage Chips

    ElevATE Semiconductor and GlobalFoundries Partner for High-Voltage Chips

    3 Min Read

    ElevATE Semiconductor and GlobalFoundries announced a manufacturing partnership for high-voltage chips produced at GF’s facility in Essex Junction, Vermont. Designed by ElevATE and manufactured at scale by GF on its proven and power-efficient 7HV technology platform, the chips are vital to both commercial semiconductor testing equipment and critical applications for aerospace and defense systems.  

    The agreement outlines GF’s supply of its 7HV chip technology to ElevATE and the marketplace. Manufactured on 200mm wafers at GF’s Vermont facility, the mature-node chips pair power management and wireless sensing capabilities, delivering the performance, design flexibility and power efficiency required by a range of electronics devices in national security systems. The 7HV platform is optimized for cost and performance, and offers a full suite of features and options with well-characterized design tools, as well as proven manufacturing reliability with robust yields. 

    To meet the demands of commercial clients and the aerospace and defense industry, ElevATE and GF are collaborating to provide restart support and reestablish the production of 7HV chips. The renewed availability of the 7HV platform will save customers costs, time, and the challenge of redesigning their products using a different chip technology. The new supply will build upon the success of the millions of 7HV chips previously manufactured at GF’s Vermont facility.  

    “This collaboration marks a significant transformation in ElevATE’s production strategy, transitioning its fabrication processes to GlobalFoundries,” said Anil Kodali, Vice President of Operations and Quality Assurance at ElevATE. “With GF as our manufacturing partner, we can be sure of a robust and reliable source of supply, enabling us to meet the escalating demands of our customers in terms of volume, quality and time-to-market.” 

    “Our collaboration with ElevATE underscores GF’s commitment to ensuring the U.S. semiconductor and national security ecosystems have a reliable supply of secure, domestically manufactured chips,” said Nicholas Sergeant, vice president and head of the aerospace, defense and critical infrastructure business at GF. “As the leading supplier of essential chips for the U.S. aerospace and defense industry and a longstanding partner to the Department of Defense, GF goes above and beyond to ensure our national security customers have the chips they need, manufactured where they want them, with the right level of security.” 

    GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Today, around 1,800 GF employees work at the site. Built on GF’s differentiated technologies, these GF-made chips are used in smartphones, automobiles, and communications infrastructure applications around the world. The facility is a DMEA-accredited Trusted Foundry and manufactures secure chips in partnership with the U.S. government. 

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  • STMicroelectronics to Build Fully Integrated Silicon Carbide Facility in Italy

    STMicroelectronics to Build Fully Integrated Silicon Carbide Facility in Italy

    2 Min Read

    STMicroelectronics announced a new high-volume 200mm silicon carbide (“SiC”) manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy. Combined with the SiC substrate manufacturing facility being readied on the same site, these facilities will form ST’s Silicon Carbide Campus, realizing the Company’s vision of a fully vertically integrated manufacturing facility for the mass production of SiC on one site.

    The creation of the new Silicon Carbide Campus is a key milestone to support customers for SiC devices across automotive, industrial and cloud infrastructure applications, as they transition to electrification and seek higher efficiency.

    “The fully integrated capabilities unlocked by the Silicon Carbide Campus in Catania will contribute significantly to ST’s SiC technology leadership for automotive and industrial customers through the next decades,” said Jean-Marc Chery, President and Chief Executive Officer of STMicroelectronics. “The scale and synergies offered by this project will enable us to better innovate with high-volume manufacturing capacity, to the benefit of our European and global customers as they transition to electrification and seek more energy efficient solutions to meet their decarbonization goals.”

    The Silicon Carbide Campus will serve as the center of ST’s global SiC ecosystem, integrating all steps in the production flow, including SiC substrate development, epitaxial growth processes, 200mm front-end wafer fabrication and module back-end assembly, as well as process R&D, product design, advanced R&D labs for dies, power systems and modules, and full packaging capabilities. This will achieve a first of a kind in Europe for the mass production of 200mm SiC wafers with each step of the process – substrate, epitaxy & front-end, and back-end – using 200 mm technologies for enhanced yields and performances.

    The new facility is targeted to start production in 2026 and to ramp to full capacity by 2033, with up to 15,000 wafers per week at full build-out. The total investment is expected to be around five billion euros, with a support of around two billion euros provided by the State of Italy within the framework of the EU Chips Act. Sustainable practices are integral to the design, development, and operation of the Silicon Carbide Campus to ensure the responsible consumption of resources including water and power.

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  • Infineon Technologies on Schedule with Construction of Smart Power Fab in Dresden

    Infineon Technologies on Schedule with Construction of Smart Power Fab in Dresden

    4 Min Read

    Infineon Technologies AG is on schedule with the construction of the Smart Power Fab in Dresden and is initiating the final construction phase. During a visit, the Prime Minister of the Free State of Saxony, Michael Kretschmer, officially handed over the last outstanding building permit for the new fab issued by the State Directorate of Saxony.

    The excavation of the building pit has now been completed. The shell and building construction are currently progressing on the concrete foundation, which is up to two meters thick. Infineon officially broke ground for the new plant in Dresden in May 2023. Manufacturing is scheduled to start in 2026. The production will focus on semiconductors that promote decarbonization and digitalization.

    With a total investment of five billion euros, the company is making a significant contribution to the European Commission goal to increase the EU’s share of global semiconductor production to 20 percent by 2030. The semiconductors manufactured in Dresden will secure future value chains in key European industries. The products manufactured in the new production facility will be used in the automotive and renewable energy industries. The interaction of power semiconductors and analog/mixed-signal components enables particularly energy-efficient and intelligent system solutions – hence the name Smart Power Fab.

    “The construction of the Smart Power Fab is a big win for Dresden, Saxony, Germany and Europe,” says Michael Kretschmer, Prime Minister of the Free State of Saxony. “Infineon’s fourth production module in Dresden is another important building block in strengthening Europe’s resilience in the field of microelectronics. It is a further step towards achieving the European Commission’s goal of increasing Europe’s share of global chip production to 20 percent. Thanks to a thoughtful cooperation between the company, the Free State of Saxony, the local authorities, and the federal government, it has been possible to get the investment off the ground and to issue the relevant permits quickly. As a result, the semiconductors that we urgently need for the mobility and energy transition can be produced in the new fab starting in 2026.”

    “We are making excellent progress with the construction of our state-of-the-art Smart Power Fab in Dresden. We are right on schedule also thanks to the excellent cooperation with the authorities,” says Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer of Infineon. “With our strategic decision to continue investing in Dresden, we are securing the long-term future of the site and strengthening the manufacturing base for semiconductors in Europe.”

    The dimensions of the construction site are impressive. On average, construction workers have removed around 8,000 tons of soil every day since the start of work. A total of 450,000 cubic meters of excavated soil has been produced, which corresponds to the volume of 180 Olympic swimming pools.

    The soil is being temporarily stored in a specially prepared area near the Dresden Airport freeway junction. The 22-metre-deep pit not only compensates for the natural gradient, but also provides a firm foundation for the 150- to 190-centimetre-thick base plate, which is intended to reduce vibrations – from passing streetcars, for example – to a minimum. Even minimal vibrations can affect the sensitive semiconductor production.

    In the next construction phase, the basement levels will be built, along with other levels. The clean room – the heart of the Smart Power Fab – is planned for the fourth level. Once completed, it will be at the exact same height as the site’s three existing production rooms. This will optimize an integrated production. The future construction phase of the project includes a total of ten tower cranes, some of them 80 meters high to support up to 1,200 construction workers who will be working on the site every day in multiple shifts.

    The investment in Dresden is part of the company’s strategy to reach CO 2-neutrality by 2030. The Smart Power Fab sets new efficiency standards for the consumption of important resources such as energy and water. This has a positive impact on the carbon footprint of Infineon. Even today, Infineon’s products, which are used in solar and wind power plants, reduce 34 times the amount of CO 2 emitted during their production over their lifetime.

    With the investment in the new plant, Infineon is creating an additional 1,000 jobs in the Saxon state capital. The company currently employs approximately 3,250 people in Dresden. The number of trainees has already been significantly increased with the new Fab. Subject to the European Commission’s state aid decision and the national grant procedure, the project is to be funded in accordance with the objectives of the European Chips Act. Infineon is aiming for public funding of around one billion euros.

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  • Toshiba Electronic Devices & Storage Corporation Completes New 300-Millimeter Wafer Fab for Power Semiconductors

    Toshiba Electronic Devices & Storage Corporation Completes New 300-Millimeter Wafer Fab for Power Semiconductors

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation held a ceremony to mark the completion of a new 300-millimeter wafer fabrication facility for power semiconductors and an office building at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan, one of Toshiba’s key group companies. The completion of construction is a major milestone for Phase 1 of Toshiba’s multi-year investment program.

    Toshiba will now proceed with equipment installation, toward starting mass production in the second half of fiscal year 2024. Once Phase 1 reaches full-scale operation, Toshiba’s production capacity for power semiconductors, mainly MOSFETs and IGBTs, will be 2.5 times that of fiscal 2021, when the investment plan was made. Decisions on the construction and start of operation of Phase 2 will reflect market trends.

    The new manufacturing building follows and will make a major contribution to Toshiba’s Business Continuity Plan (BCP): it has a seismic isolation structure that absorbs earthquake shock and redundant power sources. Energy from renewable source and solar panels on the roof of the building (onsite PPA model) will allow the facility to meet 100% of its power requirement with renewable energy.
    Product quality and production efficiency will be boosted by the use of artificial intelligence (AI). Toshiba expects to receive a grant from the Ministry of Economy, Trade and Industry of Japan to subsidize its investment in part of the manufacturing equipment.

    Power semiconductors play a crucial role in electricity supply and control, and are essential devices for energy efficiency in all electrical equipment. With the continuing electrification of automobiles and the automation of industrial machinery, they are expected to see continued robust demand growth. Toshiba started power semiconductor production on a new 300-millimeter wafer line in the second half of fiscal 2022 at Kaga Toshiba Electronics’ existing facility. Going forward, the company will expand production with the new fab and further contribute to carbon neutrality. 

    Overview of Kaga Toshiba Electronics Corporation

    Location: 1-1, Iwauchi-machi, Nomi-shi, Ishikawa Prefecture, Japan
    Established: December, 1984
    President and Representative Director: Satoshi Aida
    Employees: 1,150 (as of March 31, 2024)
    Main Products: Discrete semiconductors (power semiconductors, small-signal devices and optoelectronic devices)
    Web: Kaga Toshiba Electronics Corporation

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  • Soitec and Tokai Carbon to Develop Polycrystalline SiC Substrates for SmartSiC™ Wafers

    Soitec and Tokai Carbon to Develop Polycrystalline SiC Substrates for SmartSiC™ Wafers

    2 Min Read

    Soitec and Tokai Carbon, a comprehensive manufacturer of carbon and graphite products, have entered into a strategic partnership for the development and supply of polycrystalline silicon carbide substrates specifically designed for Soitec SmartSiC™ wafers.

    Silicon carbide is a disruptive compound semiconductor and SmartSiC™ engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications by delivering superior manufacturing and cost efficiencies with an improved environmental footprint.

    Under this partnership, which will see Tokai Carbon supply 150mm and 200mm poly-SiC wafers to Soitec, the two companies are harnessing their advanced R&D capabilities to enhance the SmartSiC™ ecosystem. Tokai Carbon’s advanced technology and manufacturing capacity in polycrystalline silicon carbide (polySiC) combined with the right to use Soitec specifications for polySiC coarse wafers compliant with Soitec SmartSiC™ is expected to make a strategic contribution to the global ramp-up of SmartSiC™ wafer production.

    Cyril Menon, Chief Operations Officer of Soitec, stated: “This partnership with Tokai marks yet another key step in the ramp-up of Soitec’s SmartSiC™ technology to address fast-growing markets such as electric mobility and industrial electrification. Tokai’s top quality SiC products and R&D capabilities, combined with Soitec’s innovative SmartSiC™ technology, can help to accelerate global adoption of electric mobility and other SiC technologies. This is an important milestone in terms of perception and value creation for the SmartSiC™ ecosystem.”

    Hajime Nagasaka, CEO of Tokai Carbon, commented. “The polycrystalline SiC substrate to be supplied to Soitec is a strategic product in our solid SiC product series. We are pleased to see our long years of research and development come to fruition in this way, and we have high expectations for this product in the SiC semiconductor market, which is expected to expand significantly in the future. The partnership with Soitec is also very meaningful in terms of contributing to the realization of a sustainable society.”

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  • X-FAB Silicon Foundries Updated XP018 High-Voltage CMOS Semiconductor Fabrication Platform

    X-FAB Silicon Foundries Updated XP018 High-Voltage CMOS Semiconductor Fabrication Platform

    2 Min Read

    X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry, has updated its XP018 high-voltage CMOS semiconductor fabrication platform with new 40V and 60V high-voltage primitive devices, which feature an extended SOA for improved operational robustness.

    These 2nd generation high-voltage primitive devices exhibit up to a 50% reduction in RDSon figures compared to the previous version. This offers an alternative which is better positioned to address certain key applications – particularly where devices’ footprints need to be reduced and unit costs minimized.

    The XP018 platform is a modular 180nm high-voltage EPI technology solution, based on a low mask count 5V single-gate core module. It supports an extended temperature range of -40 to 175°C and offers a wide range of optional devices and modules, including high-gain bipolar devices, standard and high-capacitance MIM capacitors, multi-threshold (Vt) options, Schottky diodes, and depletion devices.

    The platform is supported by high-reliability automotive NVM solutions, such as embedded Flash, EEPROM, and OTP, making it specifically designed for cost-sensitive and robust automotive, industrial, and medical applications.

    In addition to the new 40V/60V devices, the platform has been enhanced by the inclusion of 5.3V Zener diodes. The new low leakage Zener diode is designed to effectively protect the gate oxide in critical applications, such as Wide Bandgap gate driver applications. Furthermore, there are also new isolated drain high-voltage devices up to 24V and a new 1.8 V medium Vt option on offer.

    Tilman Metzger, Product Line Manager for High-Voltage at X-FAB, comments: “With this update of our XP018 platform we are demonstrating X-FAB’s commitment to enhancing established technologies. XP018 has been in production for more than a decade and still sees widespread adoption for new designs from our focus market segments: automotive, industrial and medical. The new competitive high-voltage devices and updates will enable our customers to implement more innovative and cost-effective products. Designers utilizing the new XP018 primitive devices have access to comprehensive PDK support across major EDA platforms like Cadence, Siemens EDA, Synopsys, ensuring seamless integration and optimization for a range of applications.”

    A new medium Vt standard cell library is scheduled to be released in Q3 2024. Further details on the XP018 platform can be accessed by going to: www.xfab.com/technology/high-voltage

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  • Polar Semiconductor to Expand Bloomington Manufacturing Facility

    Polar Semiconductor to Expand Bloomington Manufacturing Facility

    8 Min Read

    Polar Semiconductor, the only U.S.-based manufacturer specializing in sensor, power, and high-voltage semiconductors, announced plans to expand its Bloomington, Minnesota manufacturing facility and branch into innovative technologies to serve new customers and markets. Polar expects to invest approximately $525 million in the expansion of the facility over the next two years, subject to receipt of appropriate approvals and federal, state, and local incentives.

    Polar has signed a non-binding preliminary memorandum of terms with the Department of Commerce, under which it would receive $120 million in proposed direct funding as part of the U.S. CHIPS and Science Act, and a $75 million investment from the State of Minnesota. In addition, Polar has entered into a definitive agreement pursuant to which Niobrara Capital and Prysm Capital are leading an equity investment of $175 million, enabling Polar to transition to a U.S.-owned merchant foundry. Polar plans to claim the Department of the Treasury’s Investment Tax Credit, which is expected to be up to 25% of qualified capital expenditures.

    Through these investments, Polar expects to:

    • Double its current U.S. production capacity of 200mm semiconductor wafers, increasing production from approximately 20,000 wafers per month to nearly 40,000 wafers per month;
    • Expand and modernize its facility with new automation and AI capabilities to become globally competitive through economies of scale;
    • Better serve customers in automotive, aerospace and defense, optoelectronics, MEMS, and medical devices in the U.S. with cutting-edge semiconductor products; and
    • Create over 160 new jobs to further strengthen Polar’s support of its community.

    Surya Iyer, President and COO of Polar Semiconductor, said, “We are very pleased to announce this historic investment in Minnesota semiconductor manufacturingOur expanded manufacturing facility will allow us to increase capacity and branch into innovative technologies to serve new customers and markets. Polar and its employees are grateful to the U.S. Department of Commerce and the State of Minnesota for their commitment to the future of American semiconductor manufacturing and appreciate the strong collaboration with the CHIPS Program Office, Minnesota Department of Employment and Economic Development (“DEED”), and the City of Bloomington, Minnesota, throughout this process. Polar is also pleased to welcome a significant equity investment from Niobrara Capital and Prysm Capital, which will allow the Company to become U.S.-owned, and for the continued support of our long-term partners, Sanken Electric and Allegro MicroSystems.”

    Chip Schorr, Founder and Managing Partner of Niobrara Capital, said, “Polar is positioned to enable many of America’s most critical industries, such as aerospace and defense, automotive and medical, to have a dedicated, high performance, low cost, onshore source of power semiconductors and sensors. We are pleased to be partnering with the company to support its growth and the growth of U.S. technology manufacturing leadership.”

    Jay Park, Co-Founder and Managing Partner of Prysm Capital, said “The public and private investment in Polar is a testament to the strength of Polar’s offering and team and a significant event for onshore technology investment in America. We are already seeing robust demand for Polar’s planned capacity that exceeds our expectations and reinforces our confidence in Polar.”

    “Thanks to President Biden’s leadership, with this announcement we are making taxpayer dollars go as far as possible to create jobs, secure our supply chains, and bolster manufacturing in Minnesota,” said U.S. Secretary of Commerce Gina Raimondo. “This proposed investment in Polar will crowd in private capital, which will help make Polar a U.S.-based, independent foundry. They will be able to expand their customer base and create a stable domestic supply of critical chips, made in America’s heartland.”

    “When President Biden signed the CHIPS and Science Act, he put a stake in the ground about the importance of semiconductor manufacturing in the United States,” said Assistant to the President for Science and Technology and Director of the White House Office of Science and Technology Policy Arati Prabhakar. “This is where the President’s leadership changes communities and changes lives. This proposed federal investment will catalyze $525 million from private companies and the state of Minnesota to create a healthy supply of made-in-Minnesota semiconductors that are essential to producing cars, electrical grids, defense systems, and more.”

    “The future of the semiconductor industry is being built right here in the United States, and Polar will be part of that innovation boom. Their high-voltage technology has critical customer end uses across the aerospace, automotive, and defense sectors, and this proposed investment would help them introduce new capabilities to manufacture the next generation of semiconductors,” said Under Secretary of Commerce for Standards and Technology and National Institute of Standards and Technology Director Laurie E. Locascio.

    “If we want our country to continue leading the global economy, we must stay on the cutting edge of manufacturing. This landmark investment in Polar Semiconductor’s Bloomington facility will be a game changer for domestic semiconductor manufacturing,” said Senator Amy Klobuchar. “I’m proud to have worked with Polar Semiconductor to secure the resources needed to ensure Minnesota continues to be a leader in advanced manufacturing for decades to come.”

    Governor Tim Walz said, “As a top state for innovation, education, and workforce training, Minnesota has an established reputation as a leader in the growing high-tech economy. We have been consistent and creative in our support for companies like Polar that want to establish and grow their businesses here in Minnesota. We’re grateful to the Commerce Department for its commitment to Minnesota’s future and its partnership with our state.”

    The $75 million state award is through the Minnesota Forward Fund, a new DEED program Gov. Walz signed into law last year to invest $400 million in business growth and attract new companies to Minnesota. It also provides matching funds for companies seeking federal resources like CHIPS Act funding. This is the Minnesota Forward Fund’s first award.

    “The Minnesota Forward Fund is one of the ways the Walz-Flanagan Administration is supporting innovative companies like Polar Semiconductor that are helping build Minnesota’s cutting-edge economy,” said DEED Commissioner Matt Varilek. “The number of semiconductor companies in Minnesota is growing, and they’re creating hundreds of new, high-paying jobs every year. I appreciate the Commerce Department’s support as we make this innovative industry even stronger.”

    Polar Semiconductor is a leader of the Minnesota CHIPS Coalition, formed by the GREATER Minneapolis–Saint Paul Partnership, the economic development partnership for the 15-county region, in late 2022 after the passage of the federal CHIPS and Science Act. Composed of more than 70 organizations, including manufacturers, supply-chain partners, education and training providers, labor organizations, and state and local governments, the coalition is determined to reinvigorate the region’s legacy in technology and establish the Midwest’s semiconductor industry as a national leader.

    “As a key leader in the Minnesota CHIPS Coalition, Polar Semiconductor is accelerating the growth of Minnesota’s existing semiconductor and microelectronics industry with their investment in Bloomington,” said Peter Frosch, President and CEO of the GREATER MSP Partnership. “Together with Polar and more than 70 organizations across industry, government, academia, and community, we have a shared ambition to double the size of the semiconductor and microelectronics industry in Minnesota by adding 10,000 more great jobs. The State of Minnesota’s $250 million match funds for CHIPS, along with federal grants, makes us ready to scale the industry here in Minnesota.”

    Polar is leading the Minnesota CHIPS Coalition Workforce Partnership, in collaboration with semiconductor ecosystem companies, educational institutions, employment and training organizations, the Governor’s Workforce Development Board (GWDB), and DEED to develop the high-tech manufacturing workforce of the next generation.

    Educational institution partners include the University of Minnesota, University of St. Thomas, Minnesota State College and University System, private technical colleges, and several high school systems in the state. The workforce partnership is already creating impact through training, upskilling, and apprenticeship programs, and will continue to build on its successful collaborative model, partially supported by investments from the State and CHIPS funding.

    $1.6 million of Polar’s CHIPS award will be allocated towards its workforce development efforts. Additionally, the workforce partnership expects to leverage preeminent nationwide programs, for example SCALE (Indiana-based DoD program), to boost and supplement local efforts.

    “Bloomington has always been a place where innovation thrives. Polar Semiconductor’s significant private investment in expanding its facilities, with potential direct funding from the CHIPS and Science Act and a substantial investment by the State of Minnesota, will boost our local economy and will contribute to the growth and vibrancy of semiconductor manufacturing in Bloomington,” said Bloomington Mayor Tim Busse. “We’re excited to see the tangible benefits of these investments right here in our city, bringing jobs and new opportunities for our workforce and community.”

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