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Soitec and Tokai Carbon, a comprehensive manufacturer of carbon and graphite products, have entered into a strategic partnership for the development and supply of polycrystalline silicon carbide substrates specifically designed for Soitec SmartSiC™ wafers.
Silicon carbide is a disruptive compound semiconductor and SmartSiC™ engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications by delivering superior manufacturing and cost efficiencies with an improved environmental footprint.
Under this partnership, which will see Tokai Carbon supply 150mm and 200mm poly-SiC wafers to Soitec, the two companies are harnessing their advanced R&D capabilities to enhance the SmartSiC™ ecosystem. Tokai Carbon’s advanced technology and manufacturing capacity in polycrystalline silicon carbide (polySiC) combined with the right to use Soitec specifications for polySiC coarse wafers compliant with Soitec SmartSiC™ is expected to make a strategic contribution to the global ramp-up of SmartSiC™ wafer production.
Cyril Menon, Chief Operations Officer of Soitec, stated: “This partnership with Tokai marks yet another key step in the ramp-up of Soitec’s SmartSiC™ technology to address fast-growing markets such as electric mobility and industrial electrification. Tokai’s top quality SiC products and R&D capabilities, combined with Soitec’s innovative SmartSiC™ technology, can help to accelerate global adoption of electric mobility and other SiC technologies. This is an important milestone in terms of perception and value creation for the SmartSiC™ ecosystem.”
Hajime Nagasaka, CEO of Tokai Carbon, commented. “The polycrystalline SiC substrate to be supplied to Soitec is a strategic product in our solid SiC product series. We are pleased to see our long years of research and development come to fruition in this way, and we have high expectations for this product in the SiC semiconductor market, which is expected to expand significantly in the future. The partnership with Soitec is also very meaningful in terms of contributing to the realization of a sustainable society.”
Original – Soitec
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X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty foundry, has updated its XP018 high-voltage CMOS semiconductor fabrication platform with new 40V and 60V high-voltage primitive devices, which feature an extended SOA for improved operational robustness.
These 2nd generation high-voltage primitive devices exhibit up to a 50% reduction in RDSon figures compared to the previous version. This offers an alternative which is better positioned to address certain key applications – particularly where devices’ footprints need to be reduced and unit costs minimized.
The XP018 platform is a modular 180nm high-voltage EPI technology solution, based on a low mask count 5V single-gate core module. It supports an extended temperature range of -40 to 175°C and offers a wide range of optional devices and modules, including high-gain bipolar devices, standard and high-capacitance MIM capacitors, multi-threshold (Vt) options, Schottky diodes, and depletion devices.
The platform is supported by high-reliability automotive NVM solutions, such as embedded Flash, EEPROM, and OTP, making it specifically designed for cost-sensitive and robust automotive, industrial, and medical applications.
In addition to the new 40V/60V devices, the platform has been enhanced by the inclusion of 5.3V Zener diodes. The new low leakage Zener diode is designed to effectively protect the gate oxide in critical applications, such as Wide Bandgap gate driver applications. Furthermore, there are also new isolated drain high-voltage devices up to 24V and a new 1.8 V medium Vt option on offer.
Tilman Metzger, Product Line Manager for High-Voltage at X-FAB, comments: “With this update of our XP018 platform we are demonstrating X-FAB’s commitment to enhancing established technologies. XP018 has been in production for more than a decade and still sees widespread adoption for new designs from our focus market segments: automotive, industrial and medical. The new competitive high-voltage devices and updates will enable our customers to implement more innovative and cost-effective products. Designers utilizing the new XP018 primitive devices have access to comprehensive PDK support across major EDA platforms like Cadence, Siemens EDA, Synopsys, ensuring seamless integration and optimization for a range of applications.”
A new medium Vt standard cell library is scheduled to be released in Q3 2024. Further details on the XP018 platform can be accessed by going to: www.xfab.com/technology/high-voltage
Original – X-FAB Silicon Foundries
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Polar Semiconductor, the only U.S.-based manufacturer specializing in sensor, power, and high-voltage semiconductors, announced plans to expand its Bloomington, Minnesota manufacturing facility and branch into innovative technologies to serve new customers and markets. Polar expects to invest approximately $525 million in the expansion of the facility over the next two years, subject to receipt of appropriate approvals and federal, state, and local incentives.
Polar has signed a non-binding preliminary memorandum of terms with the Department of Commerce, under which it would receive $120 million in proposed direct funding as part of the U.S. CHIPS and Science Act, and a $75 million investment from the State of Minnesota. In addition, Polar has entered into a definitive agreement pursuant to which Niobrara Capital and Prysm Capital are leading an equity investment of $175 million, enabling Polar to transition to a U.S.-owned merchant foundry. Polar plans to claim the Department of the Treasury’s Investment Tax Credit, which is expected to be up to 25% of qualified capital expenditures.
Through these investments, Polar expects to:
- Double its current U.S. production capacity of 200mm semiconductor wafers, increasing production from approximately 20,000 wafers per month to nearly 40,000 wafers per month;
- Expand and modernize its facility with new automation and AI capabilities to become globally competitive through economies of scale;
- Better serve customers in automotive, aerospace and defense, optoelectronics, MEMS, and medical devices in the U.S. with cutting-edge semiconductor products; and
- Create over 160 new jobs to further strengthen Polar’s support of its community.
Surya Iyer, President and COO of Polar Semiconductor, said, “We are very pleased to announce this historic investment in Minnesota semiconductor manufacturing. Our expanded manufacturing facility will allow us to increase capacity and branch into innovative technologies to serve new customers and markets. Polar and its employees are grateful to the U.S. Department of Commerce and the State of Minnesota for their commitment to the future of American semiconductor manufacturing and appreciate the strong collaboration with the CHIPS Program Office, Minnesota Department of Employment and Economic Development (“DEED”), and the City of Bloomington, Minnesota, throughout this process. Polar is also pleased to welcome a significant equity investment from Niobrara Capital and Prysm Capital, which will allow the Company to become U.S.-owned, and for the continued support of our long-term partners, Sanken Electric and Allegro MicroSystems.”
Chip Schorr, Founder and Managing Partner of Niobrara Capital, said, “Polar is positioned to enable many of America’s most critical industries, such as aerospace and defense, automotive and medical, to have a dedicated, high performance, low cost, onshore source of power semiconductors and sensors. We are pleased to be partnering with the company to support its growth and the growth of U.S. technology manufacturing leadership.”
Jay Park, Co-Founder and Managing Partner of Prysm Capital, said “The public and private investment in Polar is a testament to the strength of Polar’s offering and team and a significant event for onshore technology investment in America. We are already seeing robust demand for Polar’s planned capacity that exceeds our expectations and reinforces our confidence in Polar.”
“Thanks to President Biden’s leadership, with this announcement we are making taxpayer dollars go as far as possible to create jobs, secure our supply chains, and bolster manufacturing in Minnesota,” said U.S. Secretary of Commerce Gina Raimondo. “This proposed investment in Polar will crowd in private capital, which will help make Polar a U.S.-based, independent foundry. They will be able to expand their customer base and create a stable domestic supply of critical chips, made in America’s heartland.”
“When President Biden signed the CHIPS and Science Act, he put a stake in the ground about the importance of semiconductor manufacturing in the United States,” said Assistant to the President for Science and Technology and Director of the White House Office of Science and Technology Policy Arati Prabhakar. “This is where the President’s leadership changes communities and changes lives. This proposed federal investment will catalyze $525 million from private companies and the state of Minnesota to create a healthy supply of made-in-Minnesota semiconductors that are essential to producing cars, electrical grids, defense systems, and more.”
“The future of the semiconductor industry is being built right here in the United States, and Polar will be part of that innovation boom. Their high-voltage technology has critical customer end uses across the aerospace, automotive, and defense sectors, and this proposed investment would help them introduce new capabilities to manufacture the next generation of semiconductors,” said Under Secretary of Commerce for Standards and Technology and National Institute of Standards and Technology Director Laurie E. Locascio.
“If we want our country to continue leading the global economy, we must stay on the cutting edge of manufacturing. This landmark investment in Polar Semiconductor’s Bloomington facility will be a game changer for domestic semiconductor manufacturing,” said Senator Amy Klobuchar. “I’m proud to have worked with Polar Semiconductor to secure the resources needed to ensure Minnesota continues to be a leader in advanced manufacturing for decades to come.”
Governor Tim Walz said, “As a top state for innovation, education, and workforce training, Minnesota has an established reputation as a leader in the growing high-tech economy. We have been consistent and creative in our support for companies like Polar that want to establish and grow their businesses here in Minnesota. We’re grateful to the Commerce Department for its commitment to Minnesota’s future and its partnership with our state.”
The $75 million state award is through the Minnesota Forward Fund, a new DEED program Gov. Walz signed into law last year to invest $400 million in business growth and attract new companies to Minnesota. It also provides matching funds for companies seeking federal resources like CHIPS Act funding. This is the Minnesota Forward Fund’s first award.
“The Minnesota Forward Fund is one of the ways the Walz-Flanagan Administration is supporting innovative companies like Polar Semiconductor that are helping build Minnesota’s cutting-edge economy,” said DEED Commissioner Matt Varilek. “The number of semiconductor companies in Minnesota is growing, and they’re creating hundreds of new, high-paying jobs every year. I appreciate the Commerce Department’s support as we make this innovative industry even stronger.”
Polar Semiconductor is a leader of the Minnesota CHIPS Coalition, formed by the GREATER Minneapolis–Saint Paul Partnership, the economic development partnership for the 15-county region, in late 2022 after the passage of the federal CHIPS and Science Act. Composed of more than 70 organizations, including manufacturers, supply-chain partners, education and training providers, labor organizations, and state and local governments, the coalition is determined to reinvigorate the region’s legacy in technology and establish the Midwest’s semiconductor industry as a national leader.
“As a key leader in the Minnesota CHIPS Coalition, Polar Semiconductor is accelerating the growth of Minnesota’s existing semiconductor and microelectronics industry with their investment in Bloomington,” said Peter Frosch, President and CEO of the GREATER MSP Partnership. “Together with Polar and more than 70 organizations across industry, government, academia, and community, we have a shared ambition to double the size of the semiconductor and microelectronics industry in Minnesota by adding 10,000 more great jobs. The State of Minnesota’s $250 million match funds for CHIPS, along with federal grants, makes us ready to scale the industry here in Minnesota.”
Polar is leading the Minnesota CHIPS Coalition Workforce Partnership, in collaboration with semiconductor ecosystem companies, educational institutions, employment and training organizations, the Governor’s Workforce Development Board (GWDB), and DEED to develop the high-tech manufacturing workforce of the next generation.
Educational institution partners include the University of Minnesota, University of St. Thomas, Minnesota State College and University System, private technical colleges, and several high school systems in the state. The workforce partnership is already creating impact through training, upskilling, and apprenticeship programs, and will continue to build on its successful collaborative model, partially supported by investments from the State and CHIPS funding.
$1.6 million of Polar’s CHIPS award will be allocated towards its workforce development efforts. Additionally, the workforce partnership expects to leverage preeminent nationwide programs, for example SCALE (Indiana-based DoD program), to boost and supplement local efforts.
“Bloomington has always been a place where innovation thrives. Polar Semiconductor’s significant private investment in expanding its facilities, with potential direct funding from the CHIPS and Science Act and a substantial investment by the State of Minnesota, will boost our local economy and will contribute to the growth and vibrancy of semiconductor manufacturing in Bloomington,” said Bloomington Mayor Tim Busse. “We’re excited to see the tangible benefits of these investments right here in our city, bringing jobs and new opportunities for our workforce and community.”
Original – Polar Semiconductor
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LATEST NEWS / PROJECTSSemikron Danfoss to Build Semiconductor Processing to Packaging Center at SUNY Polytechnic Institute
May 3, 2024
3 Min ReadSemikron Danfoss announced its collaboration with SUNY Polytechnic Institute and other industry partners to build a Semiconductor Processing to Packaging Center that will focus on research, education and training. The facility will be established at the Semikron Danfoss office in Utica, located in the Quad C building on the SUNY Poly campus and will train 100-150 students per year in semiconductor processing, packaging and testing capabilities.
The official announcement came on Tuesday at the site of the future facility at a ceremony attended by over 100 people, including New York’s Lt. Gov. Antonio Delgado and other state and local business leaders and elected officials. “The cornerstone of our regional economic development process is collaborative, community-led projects that will build a stronger future for New Yorkers statewide,” said Delgado.
The center will be funded in part with the $4 million Empire State Development grant, announced Tuesday, as well as a larger economic development package announced by New York Governor Kathy Hochul for SUNY Poly last fall. In addition to supplying space for two classrooms and a 5,000 square-foot clean room, Danfoss will provide multiple pieces of equipment used in the semiconductor manufacturing process.
The Center will allow for both silicon device processing as well as SiC, GaN, AlN and their alloys, and Ga2O3 device processing for power electronics, optoelectronics and clean energy applications as well as their unique packaging needs.
It is anticipated that the students will be both traditional and non-traditional students, seeking either degrees or certificates. The goal of the Center is to increase graduates across advanced manufacturing disciplines by 10 percent in the next four years. The Center’s curriculum will offer several workforce development training and upskilling pathways for industry partners and their employees as well as those seeking to gain entrance into the workforce.
“The creation of a single center covering research, education and training capabilities across semiconductor processing to packaging will provide students and the future workforce with both the deep theoretical knowledge as well as the hands-on experience needed to fully understand the workflow and attention to detail needed to produce devices with the required yield and performance functionality,” said Michael Carpenter, Ph.D., Interim Dean of SUNY Poly’s College of Engineering and Associate Provost for Research. “We are looking forward to working with Danfoss and our other industry and community partners on this initiative.”
“Partnering with educational and community organizations in the communities where we operate is an important focus of Danfoss’ mission,” said Michael Godsen, general manager of Semikron Danfoss in the U.S. “We are excited to work with SUNY Poly to develop a skilled workforce in the semiconductor industry.”
Original – Semikron Danfoss
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The U of A celebrated a milestone with the topping-out of the Multi-User Silicon Carbide Research and Fabrication Facility.
More than 100 students, faculty, state leaders and citizens were on hand to sign the steel topping-out beam and hear remarks from Kim Needy, dean of the College of Engineering, and Alan Mantooth, Distinguished Professor of electrical engineering.
The new semiconductor research and fabrication facility will produce microelectronic chips made with silicon carbide, a powerful semiconductor that outperforms basic silicon in several critical ways. The facility will enable the federal government – via national laboratories – businesses of all sizes and other universities to prototype with silicon carbide, a capability that does not presently exist elsewhere in the United States.
Work at the research and fabrication facility will bridge the gap between traditional university research and the needs of private industry and will accelerate technological advancement by providing a single location where chips can go from developmental research to prototyping, testing and fabrication.
The 21,760-square-foot facility, located next to the National Center for Reliable Electrical Power Transmission at the Arkansas Research and Technology Park, will address obstacles to U.S. competitiveness in the development of silicon-carbide electronics used in a wide range of electronic devices, circuits and other consumer applications. The building will feature approximately 8,000 square feet of clean rooms for fabrication and testing.
Education and training within the facility will also accelerate workforce development, helping supply the next generation of engineers and technicians in semiconductor manufacturing.
Original – University of Arkansas
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ROHM and STMicroelectronics announced the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.
Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions”.
“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality”.said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.
Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.
Original – STMicroelectronics
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Renesas Electronics Corporation announced that it has started operations at its Kofu Factory, located in Kai City, Yamanashi Prefecture, Japan. Renesas aims to boost its production capacity of power semiconductors in anticipation of the growing demand in electric vehicles (EVs). To celebrate this milestone, Renesas held an opening ceremony on April 11 with local government officials and partner companies in attendance.
The Kofu Factory previously operated both 150mm and 200mm wafer fabrication lines under Renesas Semiconductor Manufacturing Co., Ltd, a wholly owned subsidiary of Renesas, but ceased operations in October 2014. Renesas made the decision to re-open the factory in May 2022 as a 300-mm wafer fab to support the growing demand for power semiconductors, which is propelled by the industry-wide goal to realize a decarbonized society.
Renesas conducted a 90-billion-yen worth investment in 2022 and has now started operations. The factory will start mass production of IGBTs and other products in 2025, doubling Renesas’ current production capacity for power semiconductors.
“We are proud to announce a remarkable achievement of the Kofu Factory. After its closure in 2014, the Kofu Factory has gone through a transformation and emerged as a dedicated 300-mm wafer fab for power semiconductors, exactly a decade later,” said Hidetoshi Shibata, President and CEO of Renesas.
“We extend our heartfelt thanks to the local governments of Yamanashi Prefecture, Kai City and Showa Town as well as the plant construction companies, equipment vendors, outsourcing and other partner companies. The power semiconductors produced at the Kofu Factory will help maximize the effective use of electricity, which will be in significant demand as EVs and AI continue to proliferate and advance.”
Outline of the Kofu Factory:
- Official Name: Kofu Factory, Renesas Semiconductor Manufacturing Co., Ltd.
- Address: 4617 Nishiyahata, Kai City, Yamanashi Prefecture, Japan
- Date Opened: April 1, 2024
- Size of Clean Room: up to 18,000 square meters
- Products to be Manufactured: IGBTs, Power MOSFETs and other power products
Original – Renesas Electronics
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Coherent Corp. announced that it secured $15 million in funding from the Creating Helpful Incentives to Produce Semiconductors (CHIPS) and Science Act of 2022 that provided the Department of Defense (DoD) with $2 billion to strengthen and revitalize the U.S. semiconductor supply chain.
One of the key objectives of the CHIPS program is to nurture ecosystems that reduce risk, incentivizing large-scale private investment in production, breakthrough technologies, and workers. To that end, the DoD, through the Naval Surface Warfare Center Crane Division and the National Security Technology Accelerator, established eight Microelectronics Commons regional innovation hubs in September, including the Commercial Leap Ahead for Wide-Bandgap Semiconductors (CLAWS) Hub based in North Carolina and led by NC State University.
As a member of the CLAWS Hub, Coherent will receive $15 million to accelerate the commercialization of next-generation wide- and ultrawide-bandgap semiconductors, namely, silicon carbide and single-crystal diamond, respectively.
“We are excited to be recipients of funding from the CHIPS Act, delighted to be part of the CLAWS Hub, and proud to help the U.S. establish a strategic, long-term leadership position in these critical next-generation semiconductor technologies,” said Sohail Khan, Executive Vice President, Wide-Bandgap Electronics.
“Wide- and ultrawide-bandgap semiconductors enable the electrification of transportation, including road vehicles, high-speed trains, and mobile industrial machinery. They also enable smart power grids to efficiently respond to fluctuations in energy demands by regulating the delivery of electricity from conventional and renewable sources to distribution networks, as well as to and from utility-scale power storage and microgrids.”
In addition to DoD requirements for high-voltage, high-power applications and systems including hybrid electric vehicles (HEVs), more electric aircraft (MEA) components, directed energy, Navy vessel power systems, and all-electric ships, silicon carbide power electronics are increasingly recognized for their potential to greatly improve the energy efficiency of artificial intelligence (AI) data centers and traditional hyperscale data centers, where power consumption is growing rapidly due to the exploding demand for data- and compute-intensive workloads from AI, cryptocurrency mining, and blockchain applications.
Single-crystal diamond promises to exceed the performance of silicon carbide and greatly expand the applications universe with quantum computing, quantum encryption, and quantum sensing.
Original – Coherent
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Wolfspeed, Inc. hosted Senator Thom Tillis (R-NC) and other local officials, community partners, and employees at a ceremony to celebrate the topping out of construction at the $5 billion John Palmour Manufacturing Center for Silicon Carbide. Located in Chatham County, North Carolina, the JP will produce 200mm silicon carbide wafers, significantly expanding Wolfspeed’s materials capacity, and meet the demand for next generation semiconductors critical to the energy transition and AI.
“We are excited to mark this critical milestone alongside our hard-working team, loyal customers, community partners, and ardent supporters like Senator Thom Tillis,” said Wolfspeed President and CEO, Gregg Lowe.
“This facility is a testament to Wolfspeed’s commitment to our local community and domestic workforce, furthering our position as the global leader in silicon carbide production. The JP will help maintain America’s lead in energy innovation, and unlock significant benefits for our local community by growing the state’s economy by more than $17.5 billion over the next two decades and creating 1,800 good-paying jobs by 2030.”
“Wolfspeed’s $5 billion investment in Chatham County is another example of why North Carolina is the best state in the country to do business,” said Senator Tillis. “I was proud to vote in favor of the CHIPS and Science Act, which provides critical support for domestic semiconductor manufacturing, and I applaud Wolfspeed’s commitment to developing technology here in North Carolina that supports our national security and economic interests.”
The JP represents a total investment of $5 billion, complemented by public and private support, to help accelerate the transition from silicon to silicon carbide and ramp up supply of this material recently deemed as critical to the energy transition by the U.S. Department of Energy. By the end of 2024, phase one of construction is expected to be completed on the 445-acre site.
The ramp of the JP will support recently signed customer agreements with Renesas, Infineon, and additional companies, while driving meaningful progress towards Wolfspeed’s long-term growth strategy. The JP will primarily produce 200mm silicon carbide wafers, which are 1.7x larger than 150mm wafers, translating to more efficient wafers and ultimately, lower costs. The JP underpins Wolfspeed’s vision of accelerating the adoption of silicon carbide semiconductors across a wide array of end-markets and unlocking a new era of energy efficiency.
Wolfspeed currently produces more than 60% of the world’s silicon carbide materials at its Durham, N.C. headquarters, and is engaged in a $6.5 billion capacity expansion effort to dramatically increase production.
Original – Wolfspeed
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Recently the European Space Agency (ESA) started its search for the technological advantage to improve their systems. Lead by research fellow Dr. Antxon Arrizabalaga, the project is aimed at studying the latest semiconductor technologies and exploring the impact they can have in the future of the space industry.
During its research, Dr. Antxon Arrizabalaga is looking forward to answer the following questions:
- Which are the next system-level figures the space power industry wants to achieve?
- Can the wide bandgap semiconductors help to achieve these figures?
- Which semiconductor ratings are demanded by the space power industry for each application?
At the moment the research project lead by Dr. Arrizabalaga is focusing on the silicon carbide (SiC) power semiconductor devices, as they are better suited for the requirements of the high-power applications. The team has already had several meetings with the main European space power companies discussing the points of interest mentioned above.
As a result, ESA received rich feedback with industry requirements and new ideas. And as anticipated, most of the companies are looking to the ways to increase power of their systems.
Thus, the following applications were mentioned the most:
- Latching current limiters (LCL) for high power distribution
- High-voltage (HV), increasing the traditional bus voltage, and high-power (HP) DC-DC converters
- Rectification and synchronous rectification
- HP motor drives
- Very HV applications, around and over 1 kV
Figure 1. The ratings of the semiconductor devices required by the industry for each application
According to Dr. Arrizabalaga, ESA classifies innovations in three categories, according to the degree of innovation they bring when compared to the state-of-the-art:
- Enhancing. It brings a substantial improvement to the state-of-the-art system.
- Based on a technology replacement
- For SiC devices it means replacing the Si devices in an existing application and optimizing the system to get system-level benefits
- Low risk, development time and cost for manufacturers
- Straightforward adoption by industry and high probability of success
- Enabling. It will allow a new feature, new application, or even a new mission.
- Critical technologies for a certain feature, application or mission
- For SiC devices it means that without the adoption of such devices, the new desired feature, application or mission is no longer possible
- Medium-high risk for manufacturers, higher development cost and effort, since it has never been done before
- More challenging adoption by industry, and lower probability of success
- Game-changing. It promises to bring entirely new capabilities (not considered for this study).
Figure 2. Classification of the applications mentioned by the industry and the main drivers needed to be optimized for each application.
The European Space Agency research team is looking forward to support the successful adoption of the wide bandgap (WBG) power semiconductor devices by the European space power industry, giving the European industry a competitive edge.
Original – Dr. Antxon Arrizabalaga
