-
Applied Materials, Inc. and CEA-Leti announced an expansion of their longstanding collaboration to focus on developing differentiated materials engineering solutions for several specialty semiconductor applications.
The joint lab, which represents CEA-Leti’s highest level of collaboration, aims to accelerate device innovations for Applied’s customers serving ICAPS markets (IoT, Communications, Automotive, Power and Sensors). Technology applications in those fields include photonics, image sensors, RF communications components, power devices and heterogeneous integration.
Demand for ICAPS applications and devices is being driven by industrial automation, the Internet of Things (IoT), electric vehicles, green energy and smart grid infrastructure, among other major high-growth markets. Projects at the joint lab will focus on developing solutions for a variety of materials engineering challenges to enable the next wave of ICAPS device innovation. The joint lab features several of Applied Materials’ 200mm and 300mm wafer processing systems and leverages CEA-Leti’s world-class capabilities for evaluating performance of new materials and device validation. Improvements in power consumption, performance and area/cost, along with faster time to market (PPACt™), will be key objectives of the joint team.
“CEA-Leti and Applied Materials aim to accelerate innovation and advance the roadmaps of a wide range of specialty semiconductor technologies,” said Aninda Moitra, corporate vice president and general manager of Applied Materials’ ICAPS business. “Our work at the joint lab builds upon more than a decade of successful collaboration and further strengthens our combined ability to enable faster time to innovation for ICAPS chipmakers.”
“For the past 10 years, Applied Materials and CEA-Leti have collaborated through multiple, specific joint development programs, which have set the stage for establishing our new joint lab,” said Sébastian Dauvé, the institute’s CEO. “Past projects included work in domains such as advanced metrology, materials for memory applications and optical devices, bonding techniques, materials deposition and film growth (PVD, CVD, ECD, Epitaxy) and chemical-mechanical planarization (CMP). Our results brought high value to both partners and to customers around the world, and we look forward to expanding our engagement with this new lab.”
“The joint lab, which is based at CEA-Leti, will host Applied Materials scientists and involve some of its latest-generation equipment,” Dauvé said. “In addition to developing differentiated technological solutions for Applied’s customers, the work performed at the joint lab will help overcome current technical hurdles in support of CEA-Leti’s internal R&D programs.”
Original – Applied Materials
-
Coherent Corp. announced that it has closed the $1 billion aggregate investment by DENSO CORPORATION and Mitsubishi Electric Corporation in Coherent’s silicon carbide semiconductor business.
Under the terms of the transaction announced on October 10, 2023, DENSO and Mitsubishi Electric each invested $500 million in exchange for a 12.5% non-controlling ownership interest in the Business, with Coherent owning the remaining 75%. Coherent has separated and contributed the Business to a new subsidiary that will operate the Business. Going forward, all operating and capital expenses of the Business will be funded by the Business. Coherent will control and operate the Business, which will continue to be led by Sohail Khan, Executive Vice President, Wide-Bandgap Electronics.
In connection with the transaction, the Business has entered into arm’s-length long-term supply arrangements with DENSO and Mitsubishi Electric that support their demand for 150 mm and 200 mm silicon carbide (SiC) substrates and epitaxial wafers.
“As I mentioned in October, we are excited to expand our strategic relationships with DENSO and Mitsubishi Electric to capitalize on the significant demand for silicon carbide,” said Dr. Vincent D. Mattera, Jr., Chair and CEO, Coherent.
“I believe that such a close relationship with two leaders in SiC power devices and modules is the best path forward to maximize shareholder value and position the Business for long-term growth. The investments from our strategic partners will be used to accelerate our capacity expansion plans and help sustain our leadership position, while ensuring the development of a robust and scalable supply for the rapidly growing market for SiC-based power electronics, largely driven by the explosive growth of the global electric vehicle market.”
“Through this strategic relationship with Coherent, we will secure a stable procurement of SiC wafers, which are critical for battery electric vehicles, and contribute to the realization of a carbon-neutral society by promoting the widespread adoption of BEVs in all regions around the world,” said Shinnosuke Hayashi, President & COO, Representative Member of the Board at DENSO.
Dr. Masayoshi Takemi, Executive Officer, Group President, Semiconductor & Device for Mitsubishi Electric, said, “We are pleased that this investment has been successfully completed. Going forward, we will further strengthen our collaboration with Coherent, leveraging their capabilities in development and manufacturing of SiC substrates, to achieve solid growth of our SiC power device business and contribute to a more sustainable world through decarbonization.”
When incorporated into electric vehicles and industrial infrastructure, SiC-based power electronics have demonstrated the potential to significantly reduce carbon dioxide emissions and accelerate the transition to a cleaner and more energy-efficient world.
Market estimates indicate that the SiC total addressable market will grow from $3 billion in 2022 to $21 billion in 2030, representing a 28% compound annual growth rate.
The transaction builds on Coherent’s more than two decades of demonstrated leadership in SiC materials. In recent years, the Company has aggressively invested to scale its manufacturing of 150 mm and 200 mm substrates to address this underserved market.
Over the past two years, Coherent has invested aggressively in capital and R&D for SiC. The closing of this $1 billion combined investment into the Business will accelerate the Company’s capital plans in the coming years. Specifically, the investment will fund the manufacturing expansion of the Business and, in combination with the concurrent supply agreements, enhance its position in the market.
The transaction enables Coherent to increase its available free cash flow to provide greater financial and operational flexibility to execute its capital allocation priorities, as it expects the aggregate $1 billion investment will be used to fund future capital expenditure requirements of the Business.
Original – Coherent
-
The NXP Foundation, the nonprofit organization associated with NXP Semiconductors, has announced the official opening of the NXP Advanced Manufacturing Lab at Austin Community College.
The NXP Advanced Manufacturing Lab is co-located with the ACC High School Advanced Manufacturing IMPACT Academy at ACC Highland, where students can work toward college credits while they are still in high school.
The lab was announced last year as part of a $250,000 donation to the Austin Community College District (ACC) Foundation in support of the school’s Engineering Technology and Advanced Manufacturing Program. In addition to the lab, NXP’s donation includes scholarship funds targeting candidates from the Advanced Manufacturing Academy.
The NXP Advanced Manufacturing Lab demonstrates NXP’s ongoing commitment to promote and improve science, technology, engineering and math (STEM) education in the local Austin community.
The training tools provided at the lab will help support and extend educational curriculum and resources for both adult and high school students entering the semiconductor industry and other advanced manufacturing occupations. Tools and support will address education in Industry 4.0 components, fully factory automation, reading schematics and navigating feedback control systems.
Original – NXP Semiconductors
-
With UK and European companies seeking advanced technology to solve challenges in communications, IoT and automotive applications, many are looking for local support from major solution vendors. Microchip Technology Inc. announced the inauguration of a major new facility at Cambridge Research Park, Cambridge, UK.
At the heart of Microchip’s plans to develop more of its smart, connected and secure solutions in the UK area, the new center will add significant R&D space, which will allow Microchip’s business units to further develop their already broad offering. The new site will help Microchip improve its focus on the needs of several of its highest priority markets, such as IoT, automotive, industrial and consumer.
To gain immediate benefit from the facility, many of Microchip’s highly skilled development engineers and other staff will transfer from the company’s Ely site, with plans in hand to boost the number of employees at the Cambridge site over time.
“The Cambridge site is ideally situated in one the world’s top technology areas and will enable us to attract top talent to build state of the art products and serve our customer base,” said Sumit Mitra, senior corporate vice president of Microchip’s 32-bit microcontroller, microprocessor, wireless, aerospace and development tools business units.
“We have already onboarded a large number of talented and experienced engineers for the new center and expect that the new opportunities we will offer—to develop exciting solutions for the most significant and dynamic technology markets—will further attract the highly talented staff we need.”
“The facility is intended to become a premier Microchip engineering center, employing 200 highly skilled silicon engineering staff and advanced laboratories,” said Neel Das, senior director of Microchip’s 32-bit microcontroller business unit. “Establishing the new facility in Cambridge means we can meet this target by tapping into the wealth of engineering talent that exists in the area. The Cambridge Research Park is a hub of innovation and an excellent venue to develop the high-tech solutions on which we have built our reputation.”
The three-story building will offer approximately 10,000 square feet per floor, providing space to support multiple product lines including 16- and 32-bit microcontrollers, 32-bit microprocessors and wireless connectivity products plus technology development, physical design and human resource support.
Original – Microchip Technology
-
MACOM Technology Solutions Holdings, Inc. announced the completion of its acquisition of the radio frequency business of Wolfspeed, Inc. on December 2, 2023. The RF Business is highly complementary to MACOM’s portfolio and creates a compelling combined technology solution.
“We are excited to welcome the RF Business team to MACOM,” said Stephen G. Daly, President, Chief Executive Officer and Chair. “Going forward, we are committed to supporting all product and foundry customers and building upon the RF Business’ established technology to strengthen our leadership position.”
Original – MACOM Technology Solutions
-
LATEST NEWS / PROJECTSSTMicroelectronics Signed a 15 year Power Purchase Agreement with ERG for Supply of Renewable Energy
November 24, 2023
2 Min ReadSTMicroelectronics and ERG, a leading European independent producer of energy from renewable sources, through its subsidiary ERG Power Generation, announced that they have signed a fifteen-year Power Purchase Agreement (PPA) for the supply of renewable energy to its operations in Italy over the 2024-2038 timeframe. In Italy, ST operates two high-volume semiconductor manufacturing sites in Agrate (near Milan) and Catania as well as multiple R&D, design, and sales and marketing sites.
The agreement is based on the sale by ERG of approximately 250 GWh of renewable energy per year, equivalent to a total volume of 3.75 TWh over 15 years, produced by the Sicilian wind farms of Camporeale near Palermo and Mineo-Militello-Vizzini near Catania. Both are repowering projects – upgraded with state-of-the art technologies for better efficiency and significantly higher power generation with a total installed capacity of 151.4 MW.
Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented: “This agreement marks yet another important step towards ST’s goal of becoming carbon neutral in its operations (Scope 1 and 2 emissions, and partially scope 3) by 2027, including the sourcing of 100% renewable energy by 2027. PPAs will play a major role in our transition. Starting in 2024, this PPA with ERG will provide a significant level of renewable energy for ST’s operations in Italy, which includes R&D, design, sales and marketing and large-volume chip manufacturing.”
Paolo Merli, Chief Executive Officer of ERG commented: “We are pleased with this agreement with STMicroelectronics, a leading global technology operator committed, like ERG, to decarbonizing the planet through the use of renewable energy in its industrial processes. This agreement allows us to enhance, following the Partinico-Monreale wind farm, two additional repowering projects through energy sales mechanisms capable of stabilizing revenues, in line with current market standards, ensuring the proper remuneration of invested capital”.
More information about ST’s energy and climate change commitments is available here.
STMicroelectronics was supported by its PPA advisory partners act renewable GmbH, renewable energy consultancy to multinational corporates, Pexapark AG, a renewables market intelligence, software and advisory company, and Parola Associati, external legal counsel.
Original – STMicroelectronics
-
AIXTRON SE has officially started the construction of the new innovation center at its headquarters in Herzogenrath, Germany. The leading provider of deposition equipment to the semiconductor industry is investing around EUR 100 million in 1000m2 of clean room with additional space for the required metrology equipment.
This research facility will feature the latest technologies available in the industry. The first systems are scheduled to move into the new building during the second half of 2024. The official handover is planned for early 2025.
This milestone in the company’s successful history was marked with a symbolic ground-breaking ceremony attended by representatives from politics, science and research as well as key suppliers of the company. The framework for this significant step was a celebration in honor of AIXTRON’s 40th year since its founding: The company started in December 1983 as a spin-off from RWTH Aachen University.
Since that time, AIXTRON has always been at the forefront of innovation and new, groundbreaking semiconductor technologies. The new innovation center continues on this path and forms an important foundation for the company’s continued successful growth.
“We have just completely renewed our portfolio with our successful G10 product family. The demand from our customers is already very high, so we are in the middle of a volume ramp. And we are now also starting to work on the next generation of innovative technical solutions. With this, we will successfully drive forward the electrification of the world with the megatrends of digitalization, electromobility, and energy efficiency. The new innovation center provides us with essential capacities for all of this,” says Dr. Felix Grawert, CEO of AIXTRON SE.
The cleanroom area of the innovation center will be of class ISO 6, expandable up to ISO 4. The new complex, known in the industry as “fab”, will be one of the most compact and complex semiconductor fabs in the world: the area has two sub-levels. The first sub-level accommodates, e.g., the pump filter cabinets of the systems while the facility level houses all supporting processes and systems for the entire infrastructure.
This type of space utilization increases cleanroom efficiency by a factor of up to three compared to the previously used cleanroom areas.
Original – AIXTRON
-
Intelligent management of power loads and power sources can make existing power networks more robust in order to handle the growing share of green energy. At the conclusion of the PROGRESSUS research project 22 project partners presented the project’s results in Bari, Italy.
Among other things, a solution was introduced which would make it possible to operate ten to fifteen times more electric car charging stations on a single network connection. In addition, a strategy for tracking electricity from generation all the way to consumption was presented. PROGRESSUS focused on three central topics: Efficient energy conversion, intelligent electricity management and secure network monitoring.
The Electronic Components and Systems for European Leadership Joint Undertaking (ECSEL-JU) and the governments of Germany, Italy, the Netherlands, Slovakia and Spain supported PROGRESSUS with almost 20 million euros. A total of 22 project partners from industry and research participated beginning on 1 April 2020; the project was led by Infineon Technologies AG.
“Decarbonization and electrification go hand in hand. Our power grids will have to perform better and become more stable if they are to handle the growing power volumes and fluctuations in the supply and demand of electricity. This means we need new solutions,” said Thomas Zollver, Senior Vice President Technology & Innovation of the Infineon Connected Secure Systems division.
“The joint research project PROGRESSUS has succeeded in developing a significant number of technologies that can make our existing networks more resilient. The project is thus making an important contribution to freeing our modern lives from fossil energy sources and protecting our climate for future generations.”
The project developed highly efficient electric power converters what minimizes loss while integrating battery storage systems and renewable energy sources such as photovoltaics: The converters integrate ultra-fast sensors and SiC MOSFETs which can be switched at considerably higher speeds.
This makes them suitable for use in new, innovative charge management systems for battery-electric vehicles which reduce the peak power consumption at the site level by as much as 90 percent, without significantly longer charging times. As an alternative the intelligent charging algorithm can support ten to fifteen times more charging stations on the same network connection.
Hardware-based security solutions provide the best possible protection of the communications and data in the power network’s critical infrastructure against manipulation. These solutions also serve as a basis for tracking the energy provided from the point of generation all the way to its consumption. This makes it possible for consumers to prove they are using green electricity.
Joint energy management of multiple buildings can also help relieve power networks. PROGRESSUS project partners have simulated this kind of energy management system based on real data from 16 buildings with photovoltaic systems and energy storage systems. The result: This kind of joint energy management could reduce electricity peak demands present in the public network by an average up to 80 percent, without a negative impact on customers’ needs. This value for the case investigated depends on the season, weather conditions and the configuration of the PV and storage systems.
The findings of the PROGRESSUS project constitute an important contribution to the new products and services which support the achievement of European climate targets.
The 22 partners of the PROGRESSUS research project
- Ceus UG (DE)
- Centre Tecnològic de Telecomunicacions de Catalunya (ES)
- devolo AG (DE)
- ElaadNL (NL)
- Enel X Way S.r.l. (IT)
- Friedrich-Alexander-Universität Erlangen-Nürnberg (DE)
- Greenflux Assets BV (NL)
- Heliox (NL)
- Hybrid Energy Storage Solutions S.L. (ES)
- Infineon Technologies AG (DE)
- Iquadrat Informatica S.L. (ES)
- Consorzio Nazionale Interuniversitario per la Nanoelettronica (IT)
- Acondicionamiento Tarrasense (LEITAT) (ES)
- Mixed Mode GmbH (new company name: Ingenics Digital GmbH) (DE)
- Politecnico di Bari (IT)
- R-DAS, s.r.o. (SK)
- STMicroelectronics S.r.l. (IT)
- Slovak University of Technology in Bratislava (SK)
- TH Köln (DE)
- Delft University of Technology (NL)
- Eindhoven University of Technology (NL)
- University of Messina (IT)
Original – Infineon Technologies
-
AIXTRON SE enables the semiconductor foundry BelGaN to expand its business into the growing GaN marketand to accelerate GaN technology innovation. For this important strategic step, BelGaN relies on AIXTRON’s new G10-GaN, which offers best-in-class performance, an all-new compact design, and overall lowest cost per wafer.
Starting with an 8x150mm configuration, the system will be delivered to the BelGaN production site in Oudenaarde (Belgium) before the end of 2023 and will in the future migrate to 5x200mm.
BelGaN, a leading GaN (Gallium Nitride) automotive-qualified semiconductor open foundry in Europe, recently announced the production start of its first generation 650V eGaN technology. The Gen1 platform is designed for the requirements of energy-efficient applications for sustainability and carbon neutrality.
The G10-GaN will be used to further extend the range of power chips with voltage ratings from 40V to 1200V, using GaN-on-Si, GaN on SOI, and novel GaN-on-engineered substrates. It will be applied both on lateral as well as vertical power-GaN products, with a focus on high performance, automotive quality and reliability, high yield, and low costs.
“GaN-epitaxy using MOCVD is a most critical process in any power-GaN technology, both to innovate device architectures, boost performance, yield, and quality, and to cut down the cost of GaN products. This drives a paradigm shift in power electronics, opening up fast-growing markets in e-mobility, datacom, energy conversion, etc., on a road to an electrified, carbon-neutral society.
We have been impressed by the high levels of productivity, uniformity, and low cost of ownership of AIXTRON’s new G10 platform. We highly value AIXTRON’s technological advance, leadership, and continuous innovation. The proximity of AIXTRON, in the midst of the GaN ValleyTM ecosystem, and the collaboration with its team is essential for us to rapidly achieve our innovation and production objectives,” says Dr Marnix Tack, CTO and Vice President Business Development of BelGaN.
“We are very proud that BelGaN chose AIXTRON and our latest innovative powerhouse, the G10-GaN, for the important strategic milestone to add GaN epitaxy to its existing GaN processing line in Oudenaarde (Belgium). Currently, GaN power devices are rapidly adopted in a wide range of applications, and many customers are adding GaN capabilities to their silicon lines. We are excited that technology made by AIXTRON is facilitating this important transition,” says Dr. Felix Grawert, CEO and President of AIXTRON SE.
The all-new G10-GaN cluster solution builds on the fundamentals of AIXTRON’s current tool of record, the G5+ C, while extending each single performance metric:the new platform delivers twice the productivity per cleanroom area while enabling a new level of material uniformities, unlocking new levers of competitiveness for AIXTRON’s customers.
They benefit from more than 25% lowest cost of ownership than with any other equipment on the market today. The G10-GaN also guarantees the highest throughput per m2/cleanroom, and with its full automation end-to-end, it is the only MOCVD system fully designed for silicon fabs.
Original – AIXTRON
-
onsemi opened an application test lab in Piestany, Slovakia, focused on the advancement of system solutions for battery/plug-in hybrid/electric vehicles (xEVs) and energy infrastructure (EI) power conversion systems. The state-of-the-art systems applications lab provides specialized equipment to develop and test next-generation silicon (Si) and silicon carbide (SiC) semiconductor solutions in collaboration with automotive OEMs, Tier 1s and EI providers.
Modern semiconductor devices are essential for highly efficient power conversion in xEV powertrains and charging, as well as applications in renewable energy. The new lab will play a central role in ensuring that the development of future power products results in highly differentiated, value-add solutions tailored to customers’ specific requirements.
The new facility consists of two high-voltage power labs that focus on systems and device level development as well as evaluation of SiC/Si traction inverters and ACDC/DCDC power converters. Laser welding facilities, mechanical clean rooms and workshops further enable fast prototyping and testing of next-generation system solutions.
Evaluation capabilities for the next-generation system solutions include:
- Continuous 24/7 testing
- Internally developed and patented software and hardware solutions to support high-voltage power cycling via space vector modulation (SVM) and sinusoidal pulse width modulation (SPWM)
- High-accuracy logging devices for assessing SiC and Si health and reliability
- Simulation of the harsh conditions faced by inverters during operation, testing liquid-cooled devices at temperatures as low as minus 50 degrees C and up to 220 degrees C
- Wider range of industry-recognized software allows for the programing of FPGAs and ARM microcontrollers on site, as well as qualification testing, data analysis and 3D modeling
Original – onsemi
