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MIT and Applied Materials, Inc. announced an agreement today that, together with a grant to MIT from the Northeast Microelectronics Coalition (NEMC) Hub, commits more than $40 million of estimated private and public investment to add advanced nano-fabrication equipment and capabilities to MIT.nano, the Institute’s center for nanoscale science and engineering.
The collaboration will create a unique open-access site in the United States that supports research and development at industry-compatible scale using the same equipment found in high-volume production fabs to accelerate advances in silicon and compound semiconductors, power electronics, optical computing, analog devices and other critical technologies.
The equipment and related funding and in-kind support provided by Applied Materials will significantly enhance MIT.nano’s existing capabilities to fabricate up to 200mm (8-inch) wafers, a size essential to industry prototyping and production of semiconductors used in a broad range of markets including consumer electronics, automotive, industrial automation, clean energy and more. Positioned to fill the gap between academic experimentation and commercialization, the equipment will help establish a bridge connecting early-stage innovation to industry pathways to the marketplace.
“A brilliant new concept for a chip won’t have impact in the world unless companies can make millions of copies of it. MIT.nano’s collaboration with Applied Materials will create a critical open-access capacity to help innovations travel from lab bench to industry foundries for manufacturing,” said Maria Zuber, MIT’s Vice President for Research and E. A. Griswold Professor of Geophysics. “I am grateful to Applied Materials for its investment in this vision. The impact of the new toolset will ripple across MIT and throughout Massachusetts, the region, and the nation.”
Applied Materials is the world’s largest supplier of equipment for manufacturing semiconductors, displays and other advanced electronics. The company will provide at MIT.nano several state-of-the-art process tools capable of supporting 150 and 200mm wafers and will enhance and upgrade an existing tool owned by MIT. In addition to assisting MIT.nano in the day-to-day operation and maintenance of the equipment, Applied engineers will develop new process capabilities which will benefit researchers and students from MIT and beyond.
“Chips are becoming increasingly complex, and there is tremendous need for continued advancements in 200mm devices, particularly compound semiconductors like silicon carbide and gallium nitride,” said Aninda Moitra, Corporate Vice President and General Manager of Applied Materials’ ICAPS Business. “Applied is excited to team with MIT.nano to create a unique, open-access site in the U.S. where the chip ecosystem can collaborate to accelerate innovation. Our engagement with MIT expands Applied’s university innovation network and furthers our efforts to reduce the time and cost of commercializing new technologies while strengthening the pipeline of future semiconductor industry talent.”
The Northeast Microelectronics Coalition (NEMC) Hub, managed by the Massachusetts Technology Collaborative (MassTech), will allocate $7.7 million to enable the installation of the tools. The NEMC is the regional “hub” that connects and amplifies the capabilities of diverse organizations from across New England plus New Jersey and New York. The U.S. Department of Defense (DoD) selected the NEMC Hub as one of eight Microelectronics Commons Hubs and awarded funding from the CHIPS and Science Act to accelerate the transition of critical microelectronics technologies from lab-to-fab, spur new jobs, expand workforce training opportunities and invest in the region’s advanced manufacturing and technology sectors.
The Microelectronics Commons program is managed at the federal level by the Office of the Under Secretary of Defense for Research and Engineering (OUSD(R&E)) and the Naval Surface Warfare Center, Crane Division, and facilitated through the National Security Technology Accelerator (NSTXL), which organizes the execution of the eight regional hubs located across the country. The announcement of the public sector support for the project was made at an event attended by leaders from the DoD and NSTXL during a site visit to meet with NEMC Hub members.
“The installation and operation of these tools at MIT.nano will have a direct impact on the members of the NEMC Hub, the Massachusetts and Northeast regional economy, and national security. This is what the CHIPS and Science Act is all about,” said Ben Linville-Engler, Deputy Director at the MassTech Collaborative and the interim director of the NEMC Hub. “This is an essential investment by the NEMC Hub to meet the mission of the Microelectronics Commons.”
MIT.nano is a 200,000 square-foot facility located in the heart of the MIT campus with pristine, class-100 cleanrooms capable of accepting these advanced tools. Its open-access model means that MIT.nano’s toolsets and laboratories are available not only to the campus but also to early-stage R&D by researchers from other academic institutions, non-profit organizations, government and companies ranging from Fortune 500 multinationals to local startups. Vladimir Bulović, faculty director of MIT.nano, said he expects the new equipment to come online in early 2025.
“With vital funding for installation from NEMC and after a thorough and productive planning process with Applied Materials, MIT.nano is ready to install this toolset and integrate it into our expansive capabilities that serve over 1,100 researchers from academia, startups, and established companies,” said Bulović, who is also the Fariborz Maseeh Professor of Emerging Technologies in MIT’s Department of Electrical Engineering and Computer Science (EECS). “We’re eager to add these powerful new capabilities and excited for the new ideas, collaborations, and innovations that will follow.”
As part of its arrangement with MIT.nano, Applied Materials will join the MIT.nano Consortium, an industry program comprising 12 companies from different industries around the world. With the contributions of the company’s technical staff, Applied Materials will also have the opportunity to engage with MIT’s intellectual centers, including continued membership with the Microsystems Technology Laboratories (MTL).
Original – Applied Materials
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Infineon Technologies AG and Wolfspeed, Inc. announced the expansion and extension of their existing long-term 150mm silicon carbide wafer supply agreement, originally signed in February 2018. The extended partnership includes a multi-year capacity reservation agreement.
It contributes to Infineon’s general supply chain stability, also with regard to the growing demand for silicon carbide semiconductor products for automotive, solar and EV applications and energy storage systems.
“As the demand for silicon carbide devices continues to increase, we are following a multi-source strategy to secure access to a high-quality, global and long-term supply base of 150mm and 200mm SiC wafers. Our prolonged partnership with Wolfspeed further strengthens Infineon’s supply chain resilience for the coming years,” said Jochen Hanebeck, CEO of Infineon Technologies. “We have been working with Wolfspeed for more than 20 years to bring the promise of silicon carbide to the automotive, industrial and energy markets, and to help customers leverage this energy-efficient technology to foster decarbonization.”
The adoption of silicon carbide-based power solutions is rapidly growing across multiple markets. Silicon carbide solutions enable smaller, lighter and more cost-effective designs, converting energy more efficiently to unlock new clean energy applications. To better support these growing markets, Infineon is continuously diversifying its supplier base to secure access to high-quality silicon carbide substrates.
“Wolfspeed is the world’s leader in silicon carbide production. We are the catalyst in the industry transition to silicon carbide, providing high-quality materials to key customers like Infineon, a leading supplier in both the automotive and industrial markets, while also scaling our capacity footprint,” said Wolfspeed president and CEO Gregg Lowe. “Industry estimates indicate demand for silicon carbide devices, as well as the supporting material, will grow substantially through 2030, representing a $20 billion annual opportunity. We are very pleased to continue our partnership with Infineon and to serve as a major supplier of silicon carbide wafers in the years ahead.”
Original – Infineon Technologies
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Renesas Electronics Corporation and Transphorm, Inc. announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm’s common stock for $5.10 per share in cash, representing a premium of approximately 35% to Transphorm’s closing price on January 10, 2024, a premium of approximately 56% to the volume weighted average price over the last twelve months and a premium of approximately 78% to the volume weighted average price over the last six months.
The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters.
Demand for highly efficient power systems is increasing as building blocks for carbon neutrality. To address this trend, an industry-wide transition toward wide bandgap (“WBG”) materials, represented by silicon carbide (“SiC”) and GaN, is also being seen. These advanced materials allow a broader range of voltage and switching frequency than conventional silicon-based devices. To build on this momentum, Renesas has announced the establishment of an in-house SiC production line, supported by a 10 year SiC wafer supply agreement.
Renesas now aims to further expand its WBG portfolio with Transphorm’s expertise in GaN, an emerging material that enables higher switching frequency, lower power losses, and smaller form factors. These benefits empower customers’ systems with greater efficiency, smaller and lighter composition, and lower overall cost.
As such, demand for GaN is predicted to grow by more than 50 percent annually, according to an industry study. Renesas will implement Transphorm’s auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications.
“Transphorm is a company uniquely led by a seasoned team rooted in GaN power and with origins from the University of California at Santa Barbara,” said Hidetoshi Shibata, CEO of Renesas. “The addition of Transphorm’s GaN technology builds on our momentum in IGBT and SiC. It will fuel and expand our power portfolio as a key pillar of growth, offering our customers the full ability to choose their optimal power solutions.”
“Combined with Renesas’ world-wide footprint, breadth of solution offerings and customer relationships, we are excited to pave the way for industry-wide adoption of WBG materials and set the stage for significant growth.
This transaction will also allow us to offer further expanded services to our customers and deliver significant immediate cash value to our stockholders,” said Dr. Primit Parikh, Co-founder, President and CEO of Transphorm and Dr. Umesh Mishra, Co-founder and CTO of Transphorm. “Additionally, it will provide a strong platform for our exceptional team to further Transphorm’s leading GaN technology and products.”
The board of directors of Transphorm has unanimously approved the definitive agreement with respect to the transaction and recommended that Transphorm stockholders adopt such definitive agreement and approve the merger. Concurrently with the execution of the definitive agreement, KKR Phorm Investors L.P., which holds approximately 38.6% of Transphorm’s outstanding common stock, has entered into a customary voting agreement with Renesas to vote in favor of the transaction.
The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances and the satisfaction of other customary closing conditions.
Original – Renesas Electronics
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A plan by ROHM Co., Ltd. and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply.
ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party’s production capacity.
Power devices are essential components for supplying and managing power supply in all kinds of electronic equipment, and for achieving a carbon-free, carbon-neutral society. Current demand is expected to see continued growth.
In automotive applications, development of more efficient, smaller and lighter electric powertrains has advanced alongside the rapid expansion in vehicle electrification. In industrial applications, stable supply of power devices and improved characteristics are widely required to support increasing automation and higher efficiency requirements.
Against this backdrop, ROHM has formulated a management vision, “We focus on power and analog solutions and solve social problems by contributing to our customers’ needs for energy savings and miniaturization of their products.,” and accelerates its efforts for a carbon-free. SiC power devices are the keys to energy savings.
Since the world’s first mass production of SiC MOSFETs, ROHM has been constantly developing industry-leading technologies. Among these are ROHM’s latest 4th Generation SiC MOSFETs that will be adopted for numerous electric vehicles and industrial equipment. As one of its priority projects, ROHM is working on SiC business, which contains aggressive and continuous investment to increase the production capacity of SiC and meet strong demand growth.
Toshiba Group, with its long-standing Basic Commitment, “Committed to People, Committed to the Future.,” aims to advance the achievement of carbon neutrality and a circular economy. Toshiba Electronic Devices & Storage has for decades supplied Si power devices, mainly for automotive and industrial markets, that have helped to secure energy saving solutions and equipment miniaturization.
The company started production on a 300mm wafer line last year, and is accelerating investment to enhance production capacity and meet strong demand growth. It is also advancing development of a wider lineup of SiC power devices, especially for automotive and power transmission and distribution applications, taking full advantage of the expertise it has cultivated in railway vehicle applications.
ROHM has already announced its participation in the privatization of Toshiba, but this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time, and that resulted in the joint application.
ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies’ international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.
Original – Toshiba
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Efficient Energy Technology GmbH (EET), the Austrian-based pioneer in designing and producing innovative balcony power plants, has selected Efficient Power Conversion Corporation’s (EPC) EPC2204 enhancement-mode gallium nitride (eGaN®) power transistor for its latest SolMate® green solar balcony product.
The EPC2204 strikes an optimal compromise between low RDS(on) and low COSS, critical for demanding hard switching application, while featuring a drain-source breakdown voltage of 100 V in a compact package. This compact design significantly reduces PCB size, keeps current loops small, and minimizes electromagnetic interference (EMI) emissions.
EET has realized multiple benefits following the integration of GaN in its SolMate MPPT charging converter. Efficiency loss has been halved, increasing overall efficiency from 96% to 98%. The converter’s volume has decreased by 70%, the BOM and manufacturing costs have been reduced by 20%, all while lowering cooling requirements. Additionally, the increased switching frequency by a factor of 10 eliminates the need for error-prone electrolytic capacitors, thus increasing the converter’s lifespan.
By reducing power loss, EET’s system can more efficiently convert solar energy, allowing the company to generate several megawatts of additional green solar power that would otherwise dissipate as heat on a large scale. The reduced cooling requirements are particularly significant in scenarios without access to fresh air, where a water-resistant case is employed.
EET’s SolMate has won many awards for its technical innovation, for the high technical standards and the innovative design, including the James Dyson Award, Living Standards Austria, the German Sustainability Award (Design), the SolarPower Summit Award, and a finalist in the Intersolar EES Award.
Commenting on the development, Jan Senn, CMO & Sales at EET stated, “Our vision is to make renewable energy simple, safe and reliable for everyone. We accomplish this by enabling individuals to use green energy where it is most crucial – in their own homes.
SolMate combines the highest quality, excellent user experience, and design into one user-friendly lifestyle product for every home. Transitioning to GaN helps us realize this vision, and we are currently exploring the integration of GaN transistors from EPC in other power converters as well.”
Stefan Werkstetter, VP of EMEA Sales at EPC, stated, “We are delighted that EET has chosen our EPC2204 eGaN FET for their SolMate green solar balcony product. Our commitment to delivering high-performance and efficient power conversion solutions aligns perfectly with EET’s mission to make renewable energy accessible and reliable for all. We look forward to continuing our partnership with EET and contributing to the advancement of sustainable energy solutions.”
Original – Efficient Power Conversion
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Applied Materials, Inc. and CEA-Leti announced an expansion of their longstanding collaboration to focus on developing differentiated materials engineering solutions for several specialty semiconductor applications.
The joint lab, which represents CEA-Leti’s highest level of collaboration, aims to accelerate device innovations for Applied’s customers serving ICAPS markets (IoT, Communications, Automotive, Power and Sensors). Technology applications in those fields include photonics, image sensors, RF communications components, power devices and heterogeneous integration.
Demand for ICAPS applications and devices is being driven by industrial automation, the Internet of Things (IoT), electric vehicles, green energy and smart grid infrastructure, among other major high-growth markets. Projects at the joint lab will focus on developing solutions for a variety of materials engineering challenges to enable the next wave of ICAPS device innovation. The joint lab features several of Applied Materials’ 200mm and 300mm wafer processing systems and leverages CEA-Leti’s world-class capabilities for evaluating performance of new materials and device validation. Improvements in power consumption, performance and area/cost, along with faster time to market (PPACt™), will be key objectives of the joint team.
“CEA-Leti and Applied Materials aim to accelerate innovation and advance the roadmaps of a wide range of specialty semiconductor technologies,” said Aninda Moitra, corporate vice president and general manager of Applied Materials’ ICAPS business. “Our work at the joint lab builds upon more than a decade of successful collaboration and further strengthens our combined ability to enable faster time to innovation for ICAPS chipmakers.”
“For the past 10 years, Applied Materials and CEA-Leti have collaborated through multiple, specific joint development programs, which have set the stage for establishing our new joint lab,” said Sébastian Dauvé, the institute’s CEO. “Past projects included work in domains such as advanced metrology, materials for memory applications and optical devices, bonding techniques, materials deposition and film growth (PVD, CVD, ECD, Epitaxy) and chemical-mechanical planarization (CMP). Our results brought high value to both partners and to customers around the world, and we look forward to expanding our engagement with this new lab.”
“The joint lab, which is based at CEA-Leti, will host Applied Materials scientists and involve some of its latest-generation equipment,” Dauvé said. “In addition to developing differentiated technological solutions for Applied’s customers, the work performed at the joint lab will help overcome current technical hurdles in support of CEA-Leti’s internal R&D programs.”
Original – Applied Materials
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Coherent Corp. announced that it has closed the $1 billion aggregate investment by DENSO CORPORATION and Mitsubishi Electric Corporation in Coherent’s silicon carbide semiconductor business.
Under the terms of the transaction announced on October 10, 2023, DENSO and Mitsubishi Electric each invested $500 million in exchange for a 12.5% non-controlling ownership interest in the Business, with Coherent owning the remaining 75%. Coherent has separated and contributed the Business to a new subsidiary that will operate the Business. Going forward, all operating and capital expenses of the Business will be funded by the Business. Coherent will control and operate the Business, which will continue to be led by Sohail Khan, Executive Vice President, Wide-Bandgap Electronics.
In connection with the transaction, the Business has entered into arm’s-length long-term supply arrangements with DENSO and Mitsubishi Electric that support their demand for 150 mm and 200 mm silicon carbide (SiC) substrates and epitaxial wafers.
“As I mentioned in October, we are excited to expand our strategic relationships with DENSO and Mitsubishi Electric to capitalize on the significant demand for silicon carbide,” said Dr. Vincent D. Mattera, Jr., Chair and CEO, Coherent.
“I believe that such a close relationship with two leaders in SiC power devices and modules is the best path forward to maximize shareholder value and position the Business for long-term growth. The investments from our strategic partners will be used to accelerate our capacity expansion plans and help sustain our leadership position, while ensuring the development of a robust and scalable supply for the rapidly growing market for SiC-based power electronics, largely driven by the explosive growth of the global electric vehicle market.”
“Through this strategic relationship with Coherent, we will secure a stable procurement of SiC wafers, which are critical for battery electric vehicles, and contribute to the realization of a carbon-neutral society by promoting the widespread adoption of BEVs in all regions around the world,” said Shinnosuke Hayashi, President & COO, Representative Member of the Board at DENSO.
Dr. Masayoshi Takemi, Executive Officer, Group President, Semiconductor & Device for Mitsubishi Electric, said, “We are pleased that this investment has been successfully completed. Going forward, we will further strengthen our collaboration with Coherent, leveraging their capabilities in development and manufacturing of SiC substrates, to achieve solid growth of our SiC power device business and contribute to a more sustainable world through decarbonization.”
When incorporated into electric vehicles and industrial infrastructure, SiC-based power electronics have demonstrated the potential to significantly reduce carbon dioxide emissions and accelerate the transition to a cleaner and more energy-efficient world.
Market estimates indicate that the SiC total addressable market will grow from $3 billion in 2022 to $21 billion in 2030, representing a 28% compound annual growth rate.
The transaction builds on Coherent’s more than two decades of demonstrated leadership in SiC materials. In recent years, the Company has aggressively invested to scale its manufacturing of 150 mm and 200 mm substrates to address this underserved market.
Over the past two years, Coherent has invested aggressively in capital and R&D for SiC. The closing of this $1 billion combined investment into the Business will accelerate the Company’s capital plans in the coming years. Specifically, the investment will fund the manufacturing expansion of the Business and, in combination with the concurrent supply agreements, enhance its position in the market.
The transaction enables Coherent to increase its available free cash flow to provide greater financial and operational flexibility to execute its capital allocation priorities, as it expects the aggregate $1 billion investment will be used to fund future capital expenditure requirements of the Business.
Original – Coherent
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The NXP Foundation, the nonprofit organization associated with NXP Semiconductors, has announced the official opening of the NXP Advanced Manufacturing Lab at Austin Community College.
The NXP Advanced Manufacturing Lab is co-located with the ACC High School Advanced Manufacturing IMPACT Academy at ACC Highland, where students can work toward college credits while they are still in high school.
The lab was announced last year as part of a $250,000 donation to the Austin Community College District (ACC) Foundation in support of the school’s Engineering Technology and Advanced Manufacturing Program. In addition to the lab, NXP’s donation includes scholarship funds targeting candidates from the Advanced Manufacturing Academy.
The NXP Advanced Manufacturing Lab demonstrates NXP’s ongoing commitment to promote and improve science, technology, engineering and math (STEM) education in the local Austin community.
The training tools provided at the lab will help support and extend educational curriculum and resources for both adult and high school students entering the semiconductor industry and other advanced manufacturing occupations. Tools and support will address education in Industry 4.0 components, fully factory automation, reading schematics and navigating feedback control systems.
Original – NXP Semiconductors
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With UK and European companies seeking advanced technology to solve challenges in communications, IoT and automotive applications, many are looking for local support from major solution vendors. Microchip Technology Inc. announced the inauguration of a major new facility at Cambridge Research Park, Cambridge, UK.
At the heart of Microchip’s plans to develop more of its smart, connected and secure solutions in the UK area, the new center will add significant R&D space, which will allow Microchip’s business units to further develop their already broad offering. The new site will help Microchip improve its focus on the needs of several of its highest priority markets, such as IoT, automotive, industrial and consumer.
To gain immediate benefit from the facility, many of Microchip’s highly skilled development engineers and other staff will transfer from the company’s Ely site, with plans in hand to boost the number of employees at the Cambridge site over time.
“The Cambridge site is ideally situated in one the world’s top technology areas and will enable us to attract top talent to build state of the art products and serve our customer base,” said Sumit Mitra, senior corporate vice president of Microchip’s 32-bit microcontroller, microprocessor, wireless, aerospace and development tools business units.
“We have already onboarded a large number of talented and experienced engineers for the new center and expect that the new opportunities we will offer—to develop exciting solutions for the most significant and dynamic technology markets—will further attract the highly talented staff we need.”
“The facility is intended to become a premier Microchip engineering center, employing 200 highly skilled silicon engineering staff and advanced laboratories,” said Neel Das, senior director of Microchip’s 32-bit microcontroller business unit. “Establishing the new facility in Cambridge means we can meet this target by tapping into the wealth of engineering talent that exists in the area. The Cambridge Research Park is a hub of innovation and an excellent venue to develop the high-tech solutions on which we have built our reputation.”
The three-story building will offer approximately 10,000 square feet per floor, providing space to support multiple product lines including 16- and 32-bit microcontrollers, 32-bit microprocessors and wireless connectivity products plus technology development, physical design and human resource support.
Original – Microchip Technology
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MACOM Technology Solutions Holdings, Inc. announced the completion of its acquisition of the radio frequency business of Wolfspeed, Inc. on December 2, 2023. The RF Business is highly complementary to MACOM’s portfolio and creates a compelling combined technology solution.
“We are excited to welcome the RF Business team to MACOM,” said Stephen G. Daly, President, Chief Executive Officer and Chair. “Going forward, we are committed to supporting all product and foundry customers and building upon the RF Business’ established technology to strengthen our leadership position.”
Original – MACOM Technology Solutions
