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The Hanau-based technology company Heraeus has acquired a significant stake in the start-up company Zadient. Heraeus, as a German high-tech materials player considers the market of SiC base material highly relevant and a suitable addition to its other operations.
The French-German firm Zadient specializes in the production of silicon carbide source material. Silicon carbide is a wide band gap semiconductor material, which is currently gaining rapid traction in the semiconductor market. Its properties lend themselves to use in power semiconductors, which help to convert current and voltages.
Its fundamental contribution is the dramatic increase in efficiency it provides over silicon by reducing the heat losses that occur while power passes through chips. Its ability to handle higher power densities with low losses allows for the transition from 400V to 800V battery systems in EVs which significantly shortens their charging time and increases their range. SiC based electronics are also smaller and lighter, which also contributes to increased range.
These properties have lead to the rapid adoption of SiC in applications ranging from the main inverters and on-board chargers in EVs to wind and solar power inverters, battery storage systems and even airplane power management modules. The breadth of these few examples is already an indication of the significant role SiC will play in the mobility and energy transition.
Through the partnership, Heraeus intends to accelerate the company’s growth and support Zadient’s innovative approach with its own know-how.
“Heraeus recognizes the potential of the SiC market and considers it to be highly relevant for high-tech applications. By acquiring a stake in Zadient, we can jointly offer our customers even better solutions” said Steffen Metzger, member of the Heraeus Group Management Committee. “We are very happy that we found a way to accelerate growth in the SiC market by combining the innovative ideas of the materials start-up Zadient with the manufacturing and technical expertise of the Heraeus Group.”
“We are very excited to be partnering with an industry leader like Heraeus,” noted Zadient CEO Kagan Ceran. “The expertise that Heraeus has in the industrial scale production of advanced materials, both in its home market of Germany and abroad, offers us unique synergies as we strive to realize our vision to be the world’s largest volume, highest purity producer of silicon carbide semiconductor materials.”
Original – Heraeus
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Mitsubishi Electric Corporation announced that it will enter into a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips that Nexperia will use to develop SiC discrete devices.
The electric vehicle market is expanding worldwide and is helping to drive the exponential growth of SiC power semiconductors, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to contribute significantly to global decarbonization and green transformation.
Mitsubishi Electric has established leading positions in applications such as high-speed trains, high-voltage industrial applications and home appliances. The company launched the world’s first SiC power modules for air conditioners in 2010 and became the first supplier of an all-SiC power module for Shinkansen bullet trains in 2015. Mitsubishi Electric has accumulated superior expertise for the development and manufacture of SiC power modules, which are known for their advanced performance and high reliability.
Going forward, Mitsubishi Electric expects to strengthen its partnership with Nexperia, a global leader with decades of experience in the design, manufacture, quality assurance and supply of diverse discrete devices. Nexperia’s devices are used in the automotive, industrial, mobile and consumer markets, contributing to decarbonization and a more sustainable future. Mitsubishi Electric will continue to improve the performance and quality of its SiC chips and focus on the development of power modules using proprietary module technologies.
Mark Roeloffzen, SVP & General Manager Business Group Bipolar Discretes at Nexperia, said: “This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia’s silicon carbide journey. Mitsubishi Electric has a strong track record as a supplier of technically proven SiC device and modules. Combined with Nexperia’s high-quality standards and expertise in discrete products and packaging, we will certainly generate positive synergies between both companies – ultimately enabling our customers to deliver highly energy efficient products in the industrial, automotive or consumer markets they serve.”
Masayoshi Takemi, Executive Officer and Group President, Semiconductor & Device at Mitsubishi Electric, said: “Nexperia is a leading company in the industrial sector with proven technologies for high quality discrete semiconductors. We are delighted to enter into this co-development partnership that will leverage the semiconductor technologies of both companies.”
Original – Mitsubishi Electric
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Vishay Intertechnology, Inc. and Nexperia B.V. announced that they have entered into an agreement that Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for $177million in cash. ATREG, Inc., the Seattle-based premier global firm for initiating, brokering, and executing the exchange of semiconductor manufacturing assets, served as Nexperia’s transaction advisors.
Newport wafer fab, located on 28 acres, is an automotive certified, 200mm semiconductor wafer fab that supplies primarily automotive markets. It is the largest semiconductor manufacturer in the U.K.
Toni Versluijs, Country Manager Nexperia UK, stated: “Nexperia would have preferred to continue the long-term strategy it implemented when it acquired the investment-starved fab in 2021 and provided for massive investments in equipment and personnel. However, these investment plans have been cut short by the unexpected and wrongful divestment order made by the UK Government in November 2022.The site needs clarity about its future to avoid further losses, and today’s announcement provides this. Of all options, this agreement with Vishay is the most viable one to secure the future of the site as Vishay – like Nexperia – has a solid customer base for the fab’s capabilities. For the site, Vishay’s commitment to further make the Newport wafer fab a success story is encouraging. Nexperia’s position with regards to the UK Government’s order remains unchanged.”
The closing of Newport wafer fab transaction is subject to UK government review, the purchase rights of a third party, and customary closing conditions, and is expected to occur in the first quarter of 2024.
Nexperia’s priority always remains with our employees and our customers. Whilst we work on ensuring that all conditions to the sale are met soonest, we will continue to own and manage the site and support the employees as usual.
Original – Nexperia
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ROHM has completed the acquisition of the assets of Solar Frontier’s former Kunitomi Plant located in Japan, on November 7, 2023, based on its basic agreement signed with Solar Frontier.
The Plant will be operated by LAPIS Semiconductor, a subsidiary of the ROHM Group, as its Miyazaki Plant No.2. It will become the Group’s main production site for SiC power devices and is aiming to start operation during 2024.
The ROHM Group will continue to strengthen its production capacity in accordance with its Medium-Term Management Plan while keeping abreast of market conditions, and will also thoroughly enhance its BCM system to ensure a stable supply of products to customers.
Original – ROHM
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Alongside the rapid acceleration of automotive electrification, intelligence, and connectivity, the automotive semiconductor market is currently experiencing a sustained and powerful growth trajectory. According to ‘Omdia’s’ projections, the global automotive semiconductor market is poised to exceed $80 billion by 2025, with a CAGR of 15% from 2021 to 2025.
At the same time, the market is setting increasingly high requirements for automotive-grade chip solutions, where dedicated production lines and zero-defect standards are quickly becoming basic prerequisites for industry excellence.
In sync with market dynamics and customer needs, JCET Group introduced its Automotive Electronics Business Center in 2021, thereby maintaining a strong focus on the development of the automotive electronics sector. In early 2023, JCET established its holding subsidiary – JCET Automotive Electronics (Shanghai) Co., Ltd.
JCET Automotive Electronics (Shanghai) Co., Ltd. is set to receive a capital increase of RMB 4.4 billion, resulting in a registered capital of RMB 4.8 billion. It is aimed at expediting the construction of the initial phase of its automotive chip back-end manufacturing base. This state-of-the-art project represents a dedicated ‘automotive grade’ chip packaging and testing facility.
It features a highly automated automotive-grade production line, driven by artificial intelligence and big data for optimal operational efficiency. JCET plans to leverage its full range of packaging technologies, in-depth knowledge of vehicle regulations, and quality certification system to build the company’s first lighthouse factory in China.
Situated in the cutting-edge industrial hub of Lingang, Shanghai, the JCET Automotive Chip Back-end Manufacturing Base spans over 130,000 square meters, with a factory area of approximately 200,000 square meters. The initial phase focuses on 50,000 square meters of pristine cleanrooms, with production scheduled to commence in early 2025.
This facility is expected to cater to a broad spectrum of automotive applications, including ADAS sensors, high-performance computing, interconnectivity, power modules and more. Its services will encompass traditional packaging (QFP/QFN, FBGA), advanced flip-chip packaging (FCBGA/FCCSP), high-density integration SiP, power-related packaging (SSC/DSC/TPak/HPD), and comprehensive system-level services tailored for global customer requirements.
From the outset of its design, the factory was based on a vision of high automation and intelligent lean production, with a strong commitment towards environmental responsibility and low-carbon emissions. Based on the pilot line (originally designed as an early-stage model), the factory will feature a new automated vertical storage system, an RGV automatic material transportation system, a full-range traceability system, and a reclaimed water recovery system, amongst other innovative hardware facilities.
These hardware components then integrate with software features, such as AI technology, to collect and analyze the available manufacturing data. The result is a lighthouse factory that truly embodies the principles of intelligent manufacturing and lean production, and well-aligned with Industry 4.0 standards.
In parallel, the factory will establish an automotive-grade business management system to help adhere to the “zero defect” principle. This commitment ensures that customers benefit from robust production process controls and rigorous quality inspection processes, surpassing the stringent requirements of automotive-grade manufacturing.
Mr. Jung Gang, General Manager of JCET Automotive Business unit, commented; “Proactively anticipating customer needs and delivering highest performing product quality and services have always been at the core of JCET’s principles. The company stands ready to adapt to the diverse needs and evolving standards of our customers, as we create a flagship factory that demonstrates top-tier packaging and testing technologies while providing end-to-end services for the automotive industry value chain.”
Original – JCET
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Hitachi, Ltd. has signed an agreement to transfer all shares of its wholly owned subsidiary, Hitachi Power Semiconductor Device, to MinebeaMitsumi Inc. for further growth and corporate value enhancement of Hitachi Power Semiconductor Device.
Hitachi Power Semiconductor Device was established in October 2013 for the purpose of structuring an integrated system from design and manufacturing to sales in power semiconductor business by integrating the business of Hitachi and Hitachi Haramachi Electronics Co.
Since then, Hitachi Power Semiconductor Device has been providing high value-added products utilizing high-voltage and low-loss technologies in the field of power semiconductors, which are key devices in the electrification and motorization of industry and social infrastructure, with “IGBT/SiC”, “High Voltage IC” and ” Diodes” as its three main product categories. Hitachi Power Semiconductor Device is focusing on IGBT/SiC products in the market areas where high growth is expected toward the realization of a decarbonized society, such as electric vehicles and inverters for wind power generators, in addition to railroad applications, utilizing the strength of the high durability and reliability cultivated in railroad applications.
Many customers in Japan and overseas have adopted IGBT/SiC made by Hitachi Power Semiconductor Device. In the area of high-voltage ICs for industrial and home appliance applications, Hitachi Power Semiconductor Device is contributing to efficiency improvement and noise reduction in customers’ systems through motor control technology and software based on the knowledge it has gained from providing products for a wide range of fields. Furthermore, Hitachi Power Semiconductor Device provides diodes for automotive applications, which require high reliability, for a long period of time.
Hitachi and Hitachi Power Semiconductor Device have held many discussions on measures to achieve further growth and enhance the corporate value of Hitachi Power Semiconductor Device. As a result of the discussion, we have reached a conclusion that the best way for Hitachi Power Semiconductor Device to continue its growth in the power semiconductor market, which is expected a high growth in the future, is to expand its production capacity and improve manufacturing efficiency under MinebeaMitsumi, which positions the analog semiconductor business as one of its core businesses.
Under MinebeaMitsumi, with whom Hitachi Power Devices has been collaborating for many years, Hitachi Power Semiconductor Device will further enhance its strengths in high-voltage, low-loss technologies, expand its production capacity and improve manufacturing efficiency to provide higher value-added products in larger quantities to markets and customers, thereby aiming for further growth and corporate value enhancement.
Hitachi will strive to further enhance its corporate value by leveraging the funds obtained from this share transfer for investment in growth of green and service business in the energy field.
Original – Hitachi
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Texas Instruments (TI) broke ground on its new 300-mm semiconductor wafer fabrication plant (or “fab”) in Lehi, Utah. Joined by Utah Governor Spencer Cox, state and local elected officials, as well as community leaders, TI President and Chief Executive Officer Haviv Ilan celebrated the first steps toward construction of the new fab, LFAB2, which will connect to the company’s existing 300-mm wafer fab in Lehi. Once completed, TI’s two Utah fabs will manufacture tens of millions of analog and embedded processing chips every day at full production.
“Today we take an important step in our company’s journey to expand our manufacturing footprint in Utah. This new fab is part of our long-term, 300-mm manufacturing roadmap to build the capacity our customers will need for decades to come,” said Ilan. “At TI, our passion is to create a better world by making electronics more affordable through semiconductors. We are proud to be a growing member of the Utah community, and to manufacture analog and embedded processing semiconductors that are vital for nearly every type of electronic system today.”
In February, TI announced its $11 billion investment in Utah, marking the largest economic investment in state history. LFAB2 will create approximately 800 additional TI jobs as well as thousands of indirect jobs, with first production available as early as 2026.
“TI’s growing manufacturing presence in Utah will be transformative for our state, creating hundreds of good-paying jobs for Utahns to manufacture critically important technology,” said Utah Governor Spencer Cox. “We are proud that semiconductors – made in Utah by Utahns – will power the innovation that is foundational to our country’s economic and national security.”
As part of TI’s commitment to education, the company will invest $9 million dollars in the Alpine School District to develop the state’s first Science, Technology, Engineering and Math (STEM) learning community for all students in kindergarten through 12th grade. The multiyear program will embed STEM concepts more deeply into coursework for the district’s 85,000 students and provide STEM-oriented professional development for its teachers and administrators. The district-wide program will equip students with essential STEM skills, such as critical thinking, collaboration and creative problem-solving to succeed after graduation.
“We are excited this partnership will help our students develop essential knowledge and skills, preparing them for success in life and possible careers in the technology sector,” said Alpine School District Superintendent, Dr. Shane Farnsworth. “Working together with the city of Lehi, Texas Instruments, and our schools, this collaborative investment will impact students and their families for many generations to come.”
TI has a long-standing commitment to responsible, sustainable manufacturing. LFAB2 will be one of the company’s most environmentally efficient wafer fabs, designed to meet one of the Leadership in Energy and Environmental Design (LEED) building rating system’s highest levels of structural efficiency and sustainability: LEED Gold version 4.
LFAB2 has a goal to be powered by 100% renewable electricity, and advanced 300-mm equipment and processes in Lehi will further reduce waste, water and energy consumption. In fact, LFAB2 is expected to recycle water at nearly twice the rate of TI’s existing fab in Lehi.
LFAB2 will complement TI’s existing 300-mm wafer fabs, which include LFAB1 (Lehi, Utah), DMOS6 (Dallas), and RFAB1 and RFAB2 (both in Richardson, Texas). TI is also building four new 300-mm wafer fabs in Sherman, Texas (SM1, SM2, SM3 and SM4), with production from the first fab as early as 2025.
TI’s manufacturing expansions, with anticipated support from the CHIPS and Science Act, will provide reliable supply of analog and embedded processing products. These investments in manufacturing and technology illustrate the company’s commitment to long-term capacity planning.
Original – Texas Instruments
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DENSO CORPORATION hosted a press conference at JAPAN MOBILITY SHOW 2023 held at Tokyo Big Sight on October 26. Shinnosuke Hayashi, President and COO introduced the strategy to maximize company’s contributions to “Green” and “Peace of Mind.”
Shinnnouke Hayashi, President and COO of DENSO CORPORATION said that it is a great pleasure that the Tokyo Motor Show, which has attracted much public attention for decades, has been renamed the JAPAN MOBILITY SHOW. This change reflects the fact that we are entering an era of creating new value by addressing various issues from the viewpoint of a mobility-centered society instead of just vehicles and by connecting people and technologies across industries. This means that DENSO must meet major challenges.
To evolve from “a Tier 1 supplier that supports the auto industry “to “a Tier 1 supplier that supports a mobility-centered society” to create value for more diverse customers, the company addresses three intiatives. To promote these three initiatives, DENSO will recruit new employees in the electrification and software field and actively shift the employees from the mature field to the electrification and software fields and strengthen about 4,000 employees during the four years from 2022 to 2025.- The contribution to the “evolution of mobility”
In the “Green” field, “the environment”, in addition to the product lineup in the “horizontal” direction to enable installation in HEVs, PHEVs, BEVs, and FCEVs, the lineup will be expanded in the “vertical” direction ranging from large systems, which link electrification products with energy management, to components, including power modules, thereby meeting the needs of various customers as BEVs proliferate and helping to achieve carbon neutrality in respective countries. In the “Peace of Mind” field, “worry-free society”, in addition to around-vehicle monitoring systems, DENSO will focus on driver status monitoring systems and cloud-based large systems, which connect with the social infrastructure. Through these efforts, the company will help eliminate fatalities.
Furthermore, DENSO will extend its commitment to the evolution of mobility to the sky to help realize more freedom of traveling and expand the possibilities of mobility.
- The challenge to “to create new value”
DENSO has been studying the possibility of developing and commercializing many technologies in non-mobility fields, including energy, food and agriculture, and the circular economy. Specifically, the company plans to market energy system products such as Solid Oxide Electrolysis Cell and Solid Oxide Fuel Cell in 2024 and beyond.
- Strengthening semiconductors and software
In terms of semiconductors, DENSO will actively invest about 500 billion yen by 2030. DENSO will triple the scale of the business from the current level by 2035. To expand production, the company must ensure stable procurement of materials. Thus, DENSO will forge strategic partnerships with various companies.
In the softaware field, the implementation phase to embody concepts, the company will accelerate the planning of electronic platform and over-the-air technology development based on user needs while strengthening partnerships with various customers and promote integrated development across companies. DENSO will increase the number of software engineers and improve their skills and integrate two group companies which have excellent proprietary technologies, into DENSO. One is NSITEXE, which specializes in the semiconductor intellectual property, and the other is AUBASS, which specializes in developing basic in-vehicle software. DENSO will double the speed of development by applying specialized AI, which incorporates company’s knowledge and experience gained through in-vehicle software.
Original – DENSO
- The contribution to the “evolution of mobility”
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Infineon Technologies AG announced the closing of the acquisition of GaN Systems Inc. (“GaN Systems”). The Ottawa-based company brings with it a broad portfolio of gallium nitride (GaN)-based power conversion solutions and leading-edge application know-how. All required regulatory clearances have been obtained and GaN Systems has become part of Infineon effective as of the closing.
“GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization,” said Jochen Hanebeck, CEO of Infineon. “The acquisition of GaN Systems significantly accelerates our GaN roadmap and further strengthens Infineon’s leadership in power systems through mastery of all relevant power semiconductor technologies. We welcome our new colleagues from GaN Systems to Infineon.”
Infineon now has a total of 450 GaN experts and more than 350 GaN patent families, which expands the company’s leading position in power semiconductors and considerably speeds up time-to-market. Both companies’ complementary strengths in IP and application understanding as well as a well-filled customer project pipeline put Infineon in an excellent position to address various fast-growth applications.
On 2 March 2023, Infineon and GaN Systems announced that the companies had signed a definitive agreement under which Infineon would acquire GaN Systems for US$830 million. The acquisition, an all-cash transaction, was funded from existing liquidity.
Original – Infineon Technologies
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onsemi announced the completed expansion of its state-of-the-art, world-largest silicon carbide (SiC) fabrication facility in Bucheon, South Korea. At full capacity, this fab will be able to manufacture more than one million 200 mm SiC wafers per year.
To support the ramp in SiC manufacturing capacity, onsemi plans to hire up to 1,000 local employees over the next three years to fill the mostly highly technical positions – a more than 40% increase over the present workforce of about 2,300.
Silicon carbide devices are a critical component for power conversion in electric vehicles (EVs), energy infrastructure and high-power EV chargers. The rapidly growing demand for these products has created a surge in demand for SiC chips, with demand outpacing supply for the foreseeable future. The expansion of the Bucheon fab addresses the pressing need for additional production capacity, allowing onsemi to continue to provide supply assurance for its customers and strengthen its leadership in intelligent power solutions.
Construction of the new advanced 150 mm/200 mm SiC fab line along with the high-tech utility building and adjacent parking garage began in the middle of 2022 and was completed in September 2023. The expansion of the 150 mm/200 mm SiC Epi and wafer fab emphasizes onsemi’s focus on building out its vertically integrated silicon carbide manufacturing supply chain at brownfield locations. The Bucheon SiC line is starting with the production of 150 mm wafers and will be converted to 200 mm in 2025 upon qualification of the 200 mm SiC process.
onsemi’s leadership was joined by a delegation of dignitaries led by Vice Governor for Economy of the Gyeonggi-Do Taeyoung Yeom; followed by Bucheon City Mayor YongEek Cho; National Assembly delegates; and Bucheon Chamber of Commerce and Industry Chairman JongHuem Kim. Also in attendance were representatives from local communities, customers, suppliers and the semiconductor industry.
onsemi CEO Hassane El-Khoury opened the event, noting, “The 150 mm/200 mm SiC wafer fab in Bucheon is critical to the continued success of our fully integrated SiC supply chain, enabling us to support the acceleration of electrification globally. The last five years have shown what extraordinary performance our Bucheon team is capable of, and what we can achieve when we work together with governmental agencies toward the common goal of a more sustainable future.”
“I am truly impressed by onsemi’s diligent and yet fast execution of its strategic plan to expand the Bucheon SiC wafer fab,” said Bucheon City Mayor YongEek Cho. “Not only will the city of Bucheon benefit from the creation of new employment opportunities in technology, but it will also be a part of laying the foundation for a sustainable ecosystem through electrification.”
Original – onsemi
