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Arrow Electronics, Inc. and its engineering services company, eInfochips, are working with Infineon Technologies AG to help eInfochips’ customers accelerate the development of electric vehicle (EV) chargers.
Development of EV chargers, especially DC “fast chargers,” is becoming increasingly challenging to equipment manufacturers due to several factors, such as lack of prior experience, stringent functional safety and reliability requirements, and a fledgling support network. The collaboration between Arrow and Infineon aims to help innovators navigate these challenges while accelerating time-to-market.
As part of the collaboration, Arrow’s High Power Center of Excellence has developed a 30kW DC fast charger reference platform. This includes Infineon’s 1200V CoolSiC™ Easy power modules and also hardware design, embedded firmware, bi-directional charging support and energy metering functionality.
“Combining Arrow’s strength in components, engineering and design services with Infineon’s innovative products will help customers accelerate their design and speed to market in e-mobility applications,” said Murdoch Fitzgerald, vice president, global engineering and design services at Arrow. “Customers can rely on this collaboration to deliver innovative and leading edge DC faster chargers, accelerate and de-risk design cycles, and get access to a world-class support team enabling them to plan and manage their product roadmap and lifecycles.”
“Infineon is on a drive towards decarbonization and digitalization with our ecosystem partners, and this collaboration with Arrow is a testament to this mission,” said Shri Joshi, vice president of Green Industrial Power, Infineon Technologies Americas. “The joint 30kW DC fast charger reference platform, which includes Infineon’s latest power modules and devices, will help our customers bring more fast chargers to market as the future moves to electrical vehicles. We look forward to this ongoing collaboration to support our customer base.”
The first reference design from this collaboration, a production-grade 30kW DC fast charger reference development platform, is being demonstrated at Applied Power Electronics Conference, Feb. 25-29, in Long Beach, Calif.
Original – Arrow Electronics
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Vishay Intertechnology, Inc. announced that at the Applied Power Electronics Conference and Exposition (APEC) 2024, the company is showcasing its broad portfolio of passive and semiconductor solutions that address the latest trends in power electronics — from energy harvesting, electric vehicle (EV) powertrains, and mass commercialization to efficient and effective power electronics for power tools and switching regulators that shorten the iterative design cycle.
Taking center stage in booth 1607 will be Vishay’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 40, 80 and 250 mΩ in standard packages for industrial applications, with custom products also available. In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 12 mΩ to 1 Ω.
Vishay’s SiC platform is based on a proprietary MOSFET technology — enabled through the company’s recent acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy storage, on-board charger, and charging station applications. At the booth, Vishay’s experts will also be discussing upcoming planned releases of the MaxSiC platform, including AEC-Q101 Automotive Grade products.
At APEC 2024, Vishay will also be offering a variety of product-focused demonstrations highlighting IHPT haptic actuators; the THJP ThermaWick® Thermal Jumper; the pulse performance of MELF, CRCW / CRCW-HP thick film, and MCS, MCU, and MCW thin film chip resistors; and the thermal capabilities of the PCAN and RCP high power thin and thick film resistors. In addition, application-focused demonstrations will include:
- An 800 V SiC MOSFET heat pump with a 100 % Vishay BOM
- A high voltage intelligent battery shunt for 400 V and 800 V batteries
- A six-phase DC/DC converter for mild hybrid vehicles with 48 V boardnets that provides power to 12 V loads up to 3 kW with high efficiency to 97 %
- A semiconductor-based, resettable eFuse for 800 V electric vehicle systems
Additional Vishay passive components on display at APEC 2024 will include the IHDM series of high current, edge-wound through hole inductors with continuous operation to +180 °C; hybrid planar and integrated transformers; wireless charging coils; NTC thermistors and PTC thermistors, including the PTCEL series capable of handling energy absorption up to 240 J; high power wirewound, thin film, and thick film resistors, including the anti-surge RCS with power to 0.5 W in the 0805 case size; high voltage thick film resistors and dividers; high voltage aluminum, ceramic, and power electronic capacitors (PEC); high energy tantalum capacitors; and robust metallized polypropylene film capacitors, including the MKP1848e DC-Link capacitor with high temperature operation to +125 °C.
Highlighted Vishay semiconductor solutions will consist of the SiC967 high voltage synchronous buck regulator with integrated power MOSFETs and inductors; 400 V, 600 V, and 1200 V standard rectifiers in SlimDPAK 2L and SMPD 2L packages with high creepage distance; 650 V and 1200 V SiC Schottky diodes up to 12 A in eSMP® series and power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification; and transient voltage suppressors (TVS).
Original – Vishay Intertechnology
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At the Applied Power Electronics Conference (APEC), CISSOID released its new series of SiC Inverter Control Modules (ICMs) dedicated to the E-mobility market. These software-powered SiC Inverter Control Modules are designed to help engineers create functionally safe, robust and modular E-motor drives while dramatically shortening time-to-market.
The new CXT-ICM3SA series offers optimal hardware and software integration of CISSOID’s existing line of 3-phase 1200V/340A-550A SiC MOSFET Intelligent Power Modules (IPMs) with an OLEA® T222 Field Programmable Control Unit (FPCU) control board and OLEA® APP INVERTER application software, supplied in partnership with Silicon Mobility. Depending on the selected ICM product, this modular core engine is capable of powering and controlling high voltage SiC traction inverters with battery voltages up to 850V, at output power exceeding 350kW, and with peak efficiency above 99%.
This unique integration facilitates the rapid development of SiC inverters by solving head-scratching EMC issues often generated due to fast-switching SiC transistors, by supporting different modulation schemes, e.g. SVPWM or DPWM, combined with dead time compensation, and by offering advanced motor control algorithms, including Field Oriented Control (FOC) and Flux Weakening management.
CISSOID further improves time-to-market by providing a complete SiC inverter reference design allowing motor bench testing of the ICM together with key peripheral elements such as current sensors, a high-performance DC-Link capacitor and EMI filter. Both the ICM and the reference design can be obtained from CISSOID, together with the motor control software and on-site technical support.Delivering leadership performance, the ICM supports the drive of high-speed motors, with no compromise on efficiency, thanks to the combination of CISSOID’s low losses SiC power module with the ultra-fast real-time FPCU, enabling high switching frequencies up to 50kHz. Furthermore, this application-specific processor dedicated to e-motor control, with onboard programmable hardware, accelerates the response time to critical events, off-loading the processor cores and enhancing functional safety. Both the FPCU and the control software are ISO-26262 ASIL C/D certified and AUTOSAR 4.3 compliant.
Original – CISSOID
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The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like transportation, electric grids and heavy-duty vehicles. To help developers implement SiC solutions and fast-track the development process, Microchip Technology introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology, which is designed to work out-of-the-box with preconfigured module settings to significantly reduce design and evaluation time.
To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play solution. The XIFM digital gate driver is a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured “turn-on/off” gate drive profiles that are tailored to optimize module performance.
It incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). This gate driver also complies with EN 50155, a key specification for railway applications.
“As the silicon carbide market continues to grow and push the boundaries of higher voltage, Microchip makes it easier for power system developers to adopt wide-bandgap technology with turnkey solutions like our 3.3 kV plug-and-play mSiC gate driver,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “By having the gate drive circuitry preconfigured, this solution can reduce design cycle time by up to 50% compared to a traditional analog solution.”
With over 20 years of experience in the development, design, manufacturing and support of SiC devices and power solutions, Microchip helps customers adopt SiC with ease, speed and confidence. Microchip’s mSiC™ products include SiC MOSFETS, diodes and gate drivers with standard, modified and custom options.
Original – Microchip Technology
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SemiQ Inc. unveiled the latest addition to the company’s QSiC™ family. The QSiC 1200V SiC MOSFET modules in full-bridge configurations deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks.
With a high breakdown voltage exceeding 1400V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175°C with minimal Rds(On) shift across the entire temperature spectrum. Crafted from high-performance ceramics, SemiQ’s modules achieve exceptional performance levels, increased power density, and more compact designs—especially in high-frequency and high-power environments.
Consequently, they are well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles (EVs) DC-DC converters and power supplies.
In solar inverter applications, SemiQ’s technology empowers designers to achieve greater efficiency – reaching as high as 98% – as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200V MOSFETs also maximize efficiency gains in DC-DC converters while enhancing reliability and minimizing power dissipation.
To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests—including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB)—are employed to attain the necessary automotive and industrial grade quality standards. The devices also offer extended short-circuit ratings, and all parts have undergone testing surpassing 1400V.
“At SemiQ, our commitment lies in the meticulous optimization and customization of each module, ensuring they not only meet but exceed the unique demands of high-efficiency, high-power applications,” said Dr. Timothy Han, President at SemiQ. “We believe in empowering innovation through tailored solutions, and our SiC modules exemplify the pinnacle of performance, precision, and reliability in every customized design.”
SemiQ is set to debut its QSiC product family in SOT-227, half-bridge, and full-bridge packages at the Applied Power Electronics Conference (APEC) in Long Beach, CA, from February 25 to 29, 2024. Attendees at SemiQ’s booth #2245 will be the first to explore the newest additions to the QSiC lineup. Schedule a meeting with the SemiQ team using online calendar or email at media@semiq.com.
SemiQ’s new 1200V modules in full-bridge packages are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFETs categories:
Part Numbers Circuit Configuration Ratings, Packages RdsOn mΩ GCMX020A120B2H1P Full-bridge 1200V/102A, B2 20 GCMX040A120B2H1P Full-bridge 1200V/56A, B2 40 GCMX080A120B2H1P Full-bridge 1200V/27A, B2 80 GCMX020A120B3H1P Full-bridge 1200V/93A, B3 20 GCMX040A120B3H1P Full-bridge 1200V/53A, B3 40 Original – SemiQ
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Micro Commercial Components unveiled 1700V SiC MOSFET – SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability. SICW400N170A-BP SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component’s appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
- High blocking voltage capability (1700V)
- Ultra-low on-resistance (400mΩ) enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature (to +175°C)
- Standard TO-247AB package
Original – Micro Commercial Components
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Micro Commercial Components introduced its latest high-performance component — 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, SICW028N120A4-BP is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure this new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
Original – Micro Commercial Components
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Qorvo® will showcase its latest power management innovations at the upcoming Applied Power Electronics Conference (APEC) from Feb. 26-28, at the Long Beach Convention Center in California. Attendees are invited to visit the Qorvo booth #1857 to explore the latest advancements in SPICE simulation, silicon carbide (SiC) and battery management technologies.
Qorvo will feature the following highlights at APEC 2024:
QSPICE™ Simulation Software Showcase
APEC attendees can experience the next level of simulation with Qorvo’s advanced QSPICE tool during three insightful training sessions and engage in a Q&A with the tool’s creator, Mike Engelhardt. For those unable to attend APEC, the sessions will be available on the Qorvo YouTube channel in March.Training Session Schedule:
- Tuesday, Feb. 27, 10-10:20 a.m.: The QSPICE User-Interface
- Tuesday, Feb. 27, 3-3:20 p.m.: Importing 3rd Party Models
- Wednesday, Feb. 28, 10-10:20 a.m.: Anatomy of a Macro Model Done Right
Launch of Inaugural SiC Module Family
Qorvo will unveil its first SiC module family, featuring an innovative cascode JFET architecture. This highly integrated device family simplifies high-voltage designs and offers exceptional thermal and electrical performance due to low switching losses, low thermal resistance and RDS(on) as low as 9.4mΩ.Battery Management Demonstrations
Visitors to the booth can see Qorvo’s wireless battery management debut with a demonstration showcasing a remote battery pack monitoring and state of charge solution, created in combination with Qorvo’s IoT microcontroller.Original – Qorvo
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Leapers Semiconductor introduced a new 62 mm package SiC module product portfolio, achieving top-tier performance in the industry. The modules adopt the widely used 62 mm module half-bridge topology design in the industrial field, using high-quality mature chips. It boasts high voltage resistance, outstanding power density, high short-circuit tolerance, and a temperature coefficient 1.4 times better than industry standards.
The 62 mm SiC modules include voltage resistance specifications of 1200V and 1700V, meeting the demands of high-power applications, especially suitable for applications in the smart grid, rail transit, energy storage, and power supplies.
Because of the use of leading-edge chip solutions in the industry and the application of low thermal resistance and low stray capacitance packaging technology, along with the use of Si3N4 AMB low thermal resistance substrate, Leapers’ 62 mm SiC product excels in power density, short-circuit current withstand capability, thermal resistance, and other capabilities. Particularly under high junction temperature conditions, the module’s conduction and switching losses significantly outperform industry standards.
Technical Features:- Voltage resistance options: 1200V or 1700V
- Outstanding current output capability
- Temperature coefficient index better than industry standards
- Low losses, excellent short-circuit current withstand capability
- Si3N4 AMB, low thermal resistance
Currently, Leapers 62 mm SiC modules have undergone bench tests and received orders, involving applications such as grid inverters and auxiliary inverters for rail transit vehicles. Downstream customers include domestic power grid and overseas rail transit enterprises.Original – Leapers Semiconductor
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VMAX, a leading Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected the new CoolSiC™ hybrid discrete with TRENCHSTOP™ 5 Fast-Switching IGBT and CoolSiC Schottky Diode from Infineon Technologies AG for its next generation 6.6 kW OBC/DCDC on-board chargers.
Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve a perfect cost-performance ratio for both hard and soft switching topologies. With their superior performance, optimized power density and leading quality, the power devices are ideally suited for VMAX’s on-board chargers.
“We are proud to choose Infineon’s CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, PL Director& Chief Engineer, R&D Department at VMAX.
“We are excited to strengthen our partnership with VMAX with our highly efficient hybrid products,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon. “Together, we will continue to drive e-mobility advancements, providing efficient solutions that meet the requirements of the industry in terms of performance, quality and system cost.”
With its fast, hard switching TRENCHSTOP 5 650 V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode, the hybrid discrete benefits from very low switching losses at switching speeds above 50 kHz. This makes the device an excellent option for high-power electric vehicle charging systems.
In addition, the robust 5 th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximizing reliability. Furthermore, the diffusion soldering of the SiC diode has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability.
With these features, it enables optimum system reliability and longevity, meeting the stringent requirements of the automotive industry. To further maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.
Original – Infineon Technologies
