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SemiQ will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA February 25-29, 2024.
Visitors to SemiQ’s booth #2245 will have the first opportunity to explore the latest QSiC™ 1200V SiC modules. These modules are designed to operate reliably in challenging conditions and enable high-performance, high-density implementation while minimizing both dynamic and static losses. Crafted from high-performance ceramics, the modules are available in SOT-227, half-bridge and full-bridge options.
The new QSiC MOSFET modules support a variety of innovative automotive and industrial power applications where efficiency, power density and performance are critical design criteria. These include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies and UPS/PFC circuits.
“We’re excited to showcase our new family of QSiC™ 1200V MOSFET modules at APEC and look forward to empowering engineers across the renewable energy, automotive, medical, and industrial sectors to build robust systems,” said Dr. Timothy Han, President at SemiQ.
“This family is a testament to SemiQ’s dedication to excellence in semiconductor technology. Our power modules stand out not just for their high performance, but also for the rigorous testing that ensures reliability. All modules have undergone testing exceeding 1350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality.”
Held annually, APEC is a three-day technology event that focuses on the practical and applied aspects of the power electronics business. The conference provides ample opportunities for networking, offering a range of activities from technical and industry sessions to social events and exhibitor presentations. APEC caters to a diverse group of professionals in the field of power electronics, ranging from designers of power supplies, DC-DC converters, and motor drives to equipment OEMs that use power supplies, as well as manufacturers and suppliers.
Additionally, professional education seminars are available for attendees who wish to stay updated on the latest industry trends. These seminars offer in-depth discussions of important and complex power electronics topics that can vary from introductory to advanced in technical level.
Original – SemiQ
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LATEST NEWS / Si / SiC / WBG1 Min Read
BYD honored United Nova Technology (formerly known as Semiconductor Manufacturing Electronics (ShaoXing) Corporation) with “Special Contribution Award” on BYD NEV (New Energy Vehicle) Core Supplier Convention 2023 for being a highly reliable partner in terms of quality and delivery capability.
Since 2021, UNT has engaged in broad cooperation with BYD in multi domains, including power devices such as SiC MOSFET, IGBT, and silicon-based MOSFET, as well as power modules and analog IC for automotive industry.
With the deepening of cooperation, UNT’s products have entered BYD’s ocean series and dynasty series on a large scale. In 2023, the SiC MOSFET manufactured by UNT have been widely installed in BYD’s electric vehicles. Being awarded the “Special Contribution Award” is a full recognition of the continuous contribution and outstanding performance of UNT.
In the future, UNT will continue to deepen its close cooperation with global customers such as BYD, promote technology innovations, and provide customers with more efficient and low-energy consumption solutions to support the vigorous development of the green energy.
Original – United Nova Technology
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Dr. Christian Kranert, Group Manager Equipment and Defect Simulation of the Materials Department at Fraunhofer IISB, developed a new software for the fast, full-wafer and automated detection and classification of crystal defects in silicon carbide (SiC) substrates. He also pushed the licensing of his new, so-called x-ray ropography (XRT) toolbox to the users of the x-ray topography measuring device XRTmicron from Rigaku. Another highlight is the establishment of two new SEMI International Standards for 4H-SiC defect quantification using XRT test methods.
These outstanding results confirm the success of the Joint Labs model at Fraunhofer IISB. Joint Labs are an exclusive opportunity to collaborate with Fraunhofer IISB in an industry-compatible laboratory environment.
Rigaku Europe SE and Fraunhofer IISB are operating the Center of Expertise for X-ray Topography, a joint lab that is located at the IISB’s headquarters in Erlangen, Germany. This fruitful collaboration is vividly illustrated by the new business in the field of SiC wafer mapping, which Rigaku has built up around its XRTmicron product line in less than two years.
The new LZE Prize honors Fraunhofer IISB employees for exceptional achievements. The LZE Prize is awarded for outstanding acquisitions or particularly successful collaborations, new networks with domestic and foreign partners or above-average achievements in the transfer of know-how from research to industry. The Leistungszentrum Elektroniksysteme (LZE) is a joint initiative of the Fraunhofer-Gesellschaft, Fraunhofer IIS, Fraunhofer IISB, and FAU Erlangen-Nürnberg (FAU), together with industry partners and further research institutes.
Original – Fraunhofer IISB