• Choosing a Supplier of SiC Power Devices for Vehicle Electrification

    Choosing a Supplier of SiC Power Devices for Vehicle Electrification

    3 Min Read

    The rapid growth of technology over the past century brought us as many advantages as many disadvantages including the accelerating global warming with its dramatic consequences we face every day in various parts of the Earth. So far no one found a solution how to stop this process, but there are many solutions how to slow it down. 

    Today we try to respond to this challenge with carbon neutrality initiatives launched in many countries across the globe. And one of the major steps in this green society program is the electrification of passenger and commercial vehicles.

    Right now, companies have various approaches to vehicle electrification including mild-hybrid electric vehicles MHEV, full hybrid electric vehicles HEV, plug-in hybrid electric vehicles PHEV, battery electric vehicles BEV, and fuel-cell electric vehicle FCEV. What some time ago seemed like a big step forward is a reality we live in now.

    And to make this dream come true became possible with the help of power semiconductors. For a long time, semiconductors were used in the automotive industry, and the evolution of power semiconductor materials pushed the transition to the electrification of vehicles. Electric vehicles’ performance and cost depend on the technical level of the motor control system. 

    Previously, silicon (Si) IGBT modules served as the heart of electronic control systems with their relatively high switching speed and low conduction loss. But with the growth of silicon carbide (SiC) technology, EVs step into the new era of electrification.

    Silicon-based semiconductors have been dominating the market for many decades. No wonder, several generations of power electronics engineers were passing their knowledge and experience working with silicon semiconductors. Through time they have short-listed their preferred solutions produced by several companies.

    Based on the current requirements for the improvement of battery life and dynamic performance of electric passenger and commercial vehicles, higher efficiency, and fewer parts and materials are required to further improve the power density of inverters and electric drive assemblies. All this becomes possible with the transition from Si to SiC power devices. But when it comes to the all-new silicon carbide semiconductors and the rapidly growing EV industry, many face difficulties to make the right choice of the silicon carbide devices available in the market.

    Recently I launched a poll to understand what is most important for EV companies when choosing a supplier of SiC power devices. Power electronics engineers from the semiconductor and automotive industries shared their experience and unanimously confirmed that the performance of the power devices plays a crucial role when choosing a supplier. The poll results are:

    • Performance/characteristics – 66%
    • Price – 16%
    • Lead time – 9%
    • Brand – 9%

    Based on the results it is clear that for the EV market today characteristics of SiC power devices and price play the most important role. After all, consumers want high performance and reliability at affordable prices. 

    Nowadays SiC is still more expensive than Si. However, the prices have dropped a lot in the past decade, and the growing number of SiC fabs promises to drop the price in the future. Fingers crossed, in the nearest future, the dream of the consumers for the high-performance, reliable, and affordable EV will come true.

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  • Toshiba Developed 2200 V SiC MOSFETs

    Toshiba Developed 2200 V SiC MOSFETs

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has developed 2200 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) for photovoltaic (PV) inverters. A two-level inverter with the new devices realized higher frequency operation and lower power loss than a conventional three-level silicon (Si) insulated gate bipolar transistor (IGBT) inverter. The new MOSFETs also contribute to simplification of inverter systems and reductions in their size and weight.

    Three-level inverters enjoy the advantage of low switching losses because the voltage applied to switching devices in the inverters during off-state is half the line voltage. Against this, two-level inverters have fewer switching modules than three-level inverters, realizing a simpler, smaller, and lighter system. However, they require semiconductors with higher breakdown voltage, as the applied voltage is equal to the line voltage. Also, demand for semiconductors with both low loss and high breakdown voltage is growing as 1500 V DC line voltage systems are introduced in photovoltaic and other renewable energy markets.

    Toshiba Electronic Devices & Storage Corporation has developed 2200 V Schottky barrier diode (SBD)-embedded SiC MOSFETs for two-level inverters in 1500 V DC voltage systems. The impurity concentration and thickness of the drift layer has been optimized to maintain the same relationship between the on-resistance and the breakdown voltage as our existing products, and also to achieve high resistance to cosmic rays, a requirement for PV systems. It has also been confirmed that embedding SBDs clamped parasitic PN junctions between the p-base regions and the n-drift layer secure high reliability in reverse conduction.

    Switching energy loss for the developed all-SiC module is far lower than for the Si module (Si IGBTs + Si fast recovery diodes) with the same 2000 V rated voltage class. Estimates of inverter power dissipation found that the developed SiC module achieves higher frequency operation twice that of a conventional Si IGBT, as well as a 37% lower loss for the two-level SiC inverter against the three-level Si inverter. The higher frequency operation enables downsizing and weight reduction of other system components, such as heat sinks and filters.

    Original – Toshiba

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  • University of Arkansas Began Construction of the national Multi-User Silicon Carbide Research and Fabrication Facility

    University of Arkansas Began Construction of the National Multi-User Silicon Carbide Research and Fabrication Facility

    4 Min Read

    The University of Arkansas has taken the next step to becoming a national leader in the United States’ semiconductor economy. Semiconductors, such as silicon, are essential materials in most electronic devices and advance performance in fields such as healthcare, national defense, computing and transportation.

    This August, the university began construction on the national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC. Capable of silicon or silicon carbide chip fabrication, this new semiconductor research and fabrication facility will enable the government, businesses of all sizes, and universities to prototype in silicon carbide, introducing a capability that does not presently exist in the U.S.

    This unique facility will offer low-volume prototyping for high-volume manufacturing, bridging the gap between traditional university research and the needs of private industry. This will accelerate both workforce development and technological advancement in semiconductors by providing a single location where chips can be go from developmental research to prototyping, testing and fabrication. 

    Alan Mantooth, Distinguished Professor of electrical engineering at the U of A, is principal investigator for MUSiC. He stated that with MUSiC, the university could “begin training the next generation at a variety of degree levels to provide well-trained and educated talent for onshoring semiconductor manufacturing that domestic suppliers offshored in the late 90s and early 2000s. Our training will be equally applicable to silicon and silicon carbide and other materials.”

    Construction coincides with the CHIPS America Summit on Aug. 17, an invitation-only event for research, industry and governmental leaders from across the nation to discuss CHIPS and Science Act semiconductor-related opportunities and the ways in which the U of A and the State of Arkansas are uniquely positioned to lead.

    The summit will feature Director of External and Government Affairs for the U.S Department of Commerce’s CHIPS Program Office, Adrienne Elrod. U.S. Representative Steve Womack and Arkansas Secretary of Commerce Hugh McDonald will also participate.

    In addition to the MUSiC facility, the U of A is also home to the first Energy Frontier Research Center in Arkansas, as part of a team of researchers who received $10.35 million from the U.S. Department of Energy. The Center for Manipulation of Atomic Ordering for Manufacturing Semiconductors is dedicated to investigating the formation of atomic orders in semiconductor alloys and their effects on various physical properties. This research program will enable reliable, cost-effective and transformative manufacturing of semiconductors. 

    Researchers at the U of A previously established the MonArk NSF Quantum Foundry to accelerate the development of quantum materials and devices. In collaboration with Montana State University, and other member universities, the foundry supports the study of 2-D materials — consisting of a single layer of bonded atoms — by aiding researchers and facilitating the exchange of ideas across academia and industry. The project leads the fabrication of 2-D material quantum devices and their characterization, using low-temperature electronic transport and optoelectronic techniques.

    The U of A’s existing and expanding research foundation means it’s uniquely positioned to take advantage of the recent CHIPS (Creating Helpful Incentives to Produce Semiconductors) and Science Act, which is providing approximately $280 billion in funding to stimulate domestic research and manufacturing of semiconductors.

    As a result of manufacturing and production shortages of essential computer chips during the pandemic, which are overwhelmingly manufactured overseas, the federal government has prioritized the onshoring of this critical technology.

    About the University of Arkansas: As Arkansas’ flagship institution, the U of A provides an internationally competitive education in more than 200 academic programs. Founded in 1871, the U of A contributes more than $2.2 billion to Arkansas’ economy through the teaching of new knowledge and skills, entrepreneurship and job development, discovery through research and creative activity while also providing training for professional disciplines.

    The Carnegie Foundation classifies the U of A among the few U.S. colleges and universities with the highest level of research activity. U.S. News & World Report ranks the U of A among the top public universities in the nation. See how the U of A works to build a better world at Arkansas Research and Economic Development News.

    The national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC, will provide opportunities for the government and business of all sizes, and universities to prototype in silicon carbide, introducting a capability that does not currently exist in the U.S.

    Original – University of Arkansas

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  • Infineon to Build World’s Largest 200-millimeter SiC Power Fab in Malaysia

    Infineon to Build World’s Largest 200-millimeter SiC Power Fab in Malaysia

    4 Min Read

    The decarbonization trend will result in strong market growth for power semiconductors, in particular those based on wide bandgap materials. As a leader in Power Systems, Infineon Technologies AG is now taking a further, decisive step to shape this market: By significantly expanding its Kulim fab – over and above the original investment announced in February 2022 – Infineon will build the world’s largest 200-millimeter SiC (silicon carbide) Power Fab. The planned expansion is backed by customer commitments covering about five billion euros of new design-wins in automotive and industrial applications as well as about one billion euros in pre-payments.

    Over the next five years Infineon will additionally invest up to five billion euros in Kulim during a second construction phase for Module Three. The investment will lead to an annual SiC revenue potential of about seven billion euros by the end of the decade, together with the planned 200-millimeter SiC conversion of Villach and Kulim. This highly competitive manufacturing base will support Infineon’s SiC market share target of 30% towards the end of the decade. Infineon is confident that the company’s SiC revenue in the fiscal year 2025 will come in ahead of the target of one billion euros.

    “The market for silicon carbide shows accelerating growth, not only in automotive but also in a broad range of industrial applications such as solar, energy storage and high-power EV charging. With the Kulim expansion, we will secure our leadership position in this market,” said Jochen Hanebeck, CEO of Infineon. “With the industry’s leading scale and a unique cost position, we are leveraging our competitive position of best-in-class SiC trench technology, the broadest package portfolio and unrivaled application understanding. These factors are the areas of differentiation and success in the industry.”

    Infineon has been awarded new design wins of about five billion euros along with about one billion euros in prepayments from existing and new customers: In the automotive sector this includes six OEMs, three of them from China. Among the customers are Ford, SAIC and Chery. In the area of renewable energies customers include SolarEdge and three leading Chinese photovoltaic and energy storage systems companies.

    In addition, Infineon and Schneider Electric agreed on a capacity reservation including prepayments for power products based on silicon and silicon carbide. Infineon and the respective customers will provide more details in separate announcements in the near future. The prepayments will contribute positively to Infineon’s cash flow in the coming years and shall be fully repaid in connection with the agreed sales volumes by 2030 at the latest.

    The Right Honourable Dato’ Seri Anwar bin Ibrahim, Prime Minister of Malaysia, expressed his appreciation for Infineon’s commitment to creating a significant wide bandgap hub in the country. “Malaysia is putting in maximum efforts to meet its national target to decarbonize its economy and achieve net zero by 2050. Malaysia’s continued appeal as a preferred investment destination comes with a well-established landscape for developing innovative and sustainable technologies. In this vein, Infineon’s vision on green technology and sustainability puts it right at home in Malaysia.

    Infineon and other well-established German corporations’ continued faith in Malaysia is a vote of confidence in Malaysia’s new economic growth agenda premised on inclusivity and sustainability, enabled by strong policies on knowledge transfer, quality investments, business enablement and socio-economic well-being based on equitable sharing of the nation’s wealth.”

    The Minister of Investment, Trade and Industry (MITI), His Hon. Tengku Datuk Seri Utama Zafrul Aziz lauded Infineon’s expansion and said, “Infineon’s expansion of their world-class silicon carbide facility in Kulim marks a significant milestone in Malaysia’s pursuit of developing advanced manufacturing capabilities, creating high-skilled employment opportunities and positioning the country at the forefront of enabling green technologies, which are crucial to achieving our global sustainable development goals.

    The innovative power semiconductor technologies manufactured in the SiC Power Fab will also bolster Malaysia’s position as a key player in the world’s semiconductor ecosystem, with a growing role specifically in the sustainable technology supply chain. I am heartened by Infineon’s sharing of Malaysia’s commitment to address the impact of climate change and I look forward to our long-term partnership for the further development of Malaysia’s green technologies ecosystem.”

    Sustainability is a key element in the planning, construction and operation of the fab. The building is designed in a way that allows Infineon to make responsible use of resources such as electricity and water.

    Original – Infineon Technologies

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  • Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    2 Min Read

    SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.

    Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.

    Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.

    Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.

    The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.

    Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:

    • Blocking voltage:1200V
    • Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
    • Low Switching Losses
    • High current density
    • Press FIT Contact Technology
    • 175°C maximum junction temperature
    • Thermistor inside

    DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.

    The other applications that will benefit from DFH10AL12EZC1 include:

    • Solar inverter Systems
    • Three-level Systems
    • Energy Storage Systems
    • High Frequency Switching Systems

    Original – Leapers Semiconductor

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  • WeEn Semiconductor's First Global Module Plant Commences Operations in Shanghai

    WeEn Semiconductor’s First Global Module Plant Commences Operations in Shanghai

    4 Min Read

    The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.

    Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.

    Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.

    WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.

    It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.

    To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.

    Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.

    In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.

    Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.

    There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”

    The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.

    Original – WeEn Semiconductors

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  • Infineon and SolarEdge Sign Multi-Year Supplier Capacity Reservation Agreement

    Infineon and SolarEdge Sign Multi-Year Supplier Capacity Reservation Agreement

    2 Min Read

    Infineon Technologies AG and SolarEdge Technologies, Inc. announced the signing of a multi-year Capacity Reservation Agreement (CRA).

    Extending the existing partnership, Infineon will supply SolarEdge with critical components for a variety of SolarEdge products. In addition to the CRA, the companies will collaborate on the development of future technologies and cutting-edge solar products based on wide-bandgap (WBG) materials that are key for global green energy supplies. 

    “We are excited to expand our strategic partnership with SolarEdge to shape innovation in green energy technologies and decarbonization”, said Andreas Urschitz, Chief Marketing Officer at Infineon. “Our long-lasting collaboration is an enormous asset for both companies that paves the way for breakthrough-innovation and accelerated growth, as we combine our expertise and resources. With the latest investments in silicon carbide (SiC) and gallium nitride (GaN) manufacturing capacity, Infineon underlines its commitment to be a leading partner in climate technologies such as solar power.”

    Uri Bechor, Chief Operating Officer at SolarEdge, said: “Securing the capacity levels of critical components such as power and wide-bandgap from Infineon enhances SolarEdge’s supply chain resiliency. This Capacity Reservation Agreement with Infineon is in line with our strategy to continue leading the global industry in solar energy advancement.”

    Original – Infineon Technologies

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  • onsemi and Magna Sign Strategic Agreements to Invest in Silicon Carbide

    onsemi and Magna Sign Strategic Agreements to Invest in Silicon Carbide

    2 Min Read

    onsemi and Magna announced a long-term supply agreement (LTSA) for Magna to integrate onsemi’s EliteSiC intelligent power solutions into its eDrive systems.

    By integrating onsemi’s industry-leading EliteSiC MOSFET technology, Magna eDrive systems can offer better cooling performance and faster acceleration and charging rates, improving efficiency and increasing the range of electric vehicles (EVs). Additionally, onsemi’s end-to-end silicon carbide (SiC) manufacturing capability, combined with its ability to ramp production quickly, improves Magna’s vertical integration and simplifies its supply chain to meet the growing demand for its SiC-based products for EVs.

    “With range anxiety still a top deterrent to EV adoption, our technology enables Magna to go further, easing the transition to an electrified future,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Our latest EliteSiC MOSFET technology enables increased power density and higher efficiency in traction inverters, resulting in improved gas-equivalent miles per gallon without compromising driving dynamics and safety.”

    Simultaneous with the signing of the LTSA, the companies entered a separate agreement for Magna to also invest approximately $40 million for the procurement of new SiC equipment at onsemi’s New Hampshire and Czech Republic facilities to ensure access to future supply.

    “We believe that a secure supply of silicon carbide chips will be critical to our ability to continue delivering innovative and efficient eDrive systems for our customers,” said Diba Ilunga, president Magna Powertrain. “Accordingly, we are both investing to grow SiC production capacity, and establishing the commercial basis for long-term supply of SiC-based chips to advance our electrification strategy and outpace the competition.”

    Silicon carbide is a wide bandgap semiconductor substrate that is ideal for high-temperature, high-power applications such as electric vehicles, but it is incredibly difficult to produce. With a limited number of manufacturers and significant demand for SiC-based designs, OEMs and automotive suppliers are increasingly looking to secure long-term, reliable supply.

    Original – onsemi

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  • Axcelis Ships Purion H200 SiC Power Series Implanter to Wolfspeed

    Axcelis Ships Purion H200 SiC Power Series Implanter to Wolfspeed

    2 Min Read

    Axcelis Technologies, Inc. announced a shipment of a Purion H200 SiC ion implant system to Wolfspeed. The evaluation system will be used to support the production of power devices for electric vehicle (EV) applications.

    President and CEO Dr. Russell Low of Axcelis commented, “The power device market continues to grow rapidly and is a key driver of our growth globally. We are pleased to continue to support Wolfspeed’s fab capacity expansion and are also excited about the potential of this new opportunity focused on high current implant applications in silicon carbide power devices.”

    “The popularity of electric vehicles is only steepening, and Wolfspeed is focused on scaling our capacity to meet the surge in demand for our silicon carbide devices. We partnered with Axcelis due to their expertise, highly differentiated features, and process control capabilities that are essential for power device applications,” said Missy Stigall, Wolfspeed senior vice president of global fab operations. “Together, we will work to ease supply chain constraints as more and more EVs utilizing Wolfspeed’s silicon carbide technology are introduced to the market.”

    Wolfspeed is currently engaged in a $6.5 billion capacity expansion effort to dramatically increase production. This includes the John Palmour Manufacturing Center for Silicon Carbide, the world’s largest Silicon Carbide crystal growth facility currently under construction in North Carolina, and the final build-out of the company’s Mohawk Valley Fab in New York. Earlier this year the company also announced its plans to build a highly automated, cutting-edge 200mm wafer fabrication facility in Saarland, Germany.

    Original – Axcelis Technologies

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  • Frost & Sullivan WBG Semiconductors Think Tank Overcoming Challenges, Unlocking Potential

    Frost & Sullivan WBG Semiconductors Think Tank: Overcoming Challenges, Unlocking Potential

    2 Min Read

    Wide Bandgap (WBG) semiconductors play a strategic role in driving innovation and creating energy efficient and high-performance electronics. Demand for these semiconductors is fueled by sustainability, industry advancements, and advanced connectivity.

    However, meeting this demand requires addressing challenges like cost, technology reliability, and geo-politic chaos among others. While the global WBG semiconductor industry is poised for unprecedented growth in the next 10 years, it would be critical to prioritize the opportunities, and effectively tackle the challenges to meet the short-term and long-term demands.

    Join Frost & Sullivan for an engaging and thought-provoking Think Tank on “WBG Semiconductors: Overcoming Challenges, Unlocking Potential” on July 28, at 10:00 AM, EDT. The distinguished panel of semiconductor professionals will share their expertise and experiences and will address pressing questions like:

    • How can WBG semiconductors play a central role in driving sustainability goals?
    • How can WBG semiconductors contribute to improving efficiency in renewable energy systems and energy infrastructure?
    • What role would regulations and standards play in driving the adoption of WBG semiconductors?
    • Electric vehicles (EVs) have long been strong advocates for WBG semiconductors – What are the current opportunities beyond EV that demand immediate action?

    Mark your calendars to engage in discussion with:

    • Prabhu Karunakaran, Industry Principal at Frost & Sullivan
    • Jonathan Robinson, VP Research, Power and Energy at Frost & Sullivan
    • Stephen Oliver, Marketing & Investor Relations at Navitas Semiconductor
    • Alexey Cherkasov, Marketing & Sales Director at Leapers Semiconductor

    Original – Frost & Sullivan

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