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IQE plc, the leading global supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries SE announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.
With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device. The agreement will leverage IQE’s GaN epitaxy design and process expertise, along with X-FAB’s proven technology development and device fabrication capabilities to offer an optimized technology-substrate combination for automotive, data center and consumer applications.
This collaboration will provide fabless semiconductor companies with a leading-edge, off-the-shelf GaN platform accelerating their innovation cycles and time-to-market. The technology will also serve as a foundation for future product development, extending beyond 650V to address the growing market demand for Power Electronics.
Jutta Meier, Interim Chief Executive Officer and Chief Financial Officer of IQE, comments: “We are excited to join forces with X-FAB to develop a world-class GaN power foundry solution in Europe, providing outsourced optionality for our fabless customers. Building on our GaN epitaxy expertise and recent investment in additional GaN reactor capacity, this agreement aligns with our GaN diversification strategy, expands our customer reach, and accelerates time-to-market for GaN power applications.”
“By combining our long-standing expertise in GaN device fabrication and design enablement with IQE’s epitaxy leadership, we are creating a unique, turnkey GaN Power platform,” explains Jörg Doblaski, Chief Technology Officer at X-FAB. “In addition to our existing GaN technology, this collaboration provides a compelling alternative to existing supply chain models and strengthens Europe’s position in next-generation power semiconductor technology.”
Original – X-FAB Silicon Foundries
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STMicroelectronics N.V. disclosed further elements of its program to reshape its global manufacturing footprint. This comes as part of the program announced in October 2024 to further strengthen ST’s competitiveness, solidify its position as a global semiconductor leader, and ensure the long-term sustainability of its model as an Integrated Device Manufacturer by leveraging strategic assets globally across technology R&D, design and high-volume manufacturing.
Jean-Marc Chery, President and CEO of STMicroelectronics said: “The reshaping of our manufacturing footprint announced today will future proof our Integrated Device Manufacturer model with strategic assets in Europe and improve our ability to innovate even faster, benefitting all our stakeholders. As we focus on advanced manufacturing infrastructure and mainstream technologies, we will continue to leverage all of our existing sites and bring redefined missions for some of them to support their long-term success. We are committed to managing this program responsibly, according to our long-established values, and exclusively through voluntary measures. The technology R&D, design, and high-volume manufacturing activities in Italy and France will continue to be central to our global operations and will be reinforced via planned investments in mainstream technologies”.
Innovating and scaling up to increase efficiency across manufacturing operations
As innovation cycles shorten, ST’s manufacturing strategy is evolving to accelerate the delivery of innovative, proprietary technologies and products at scale to customers globally, across automotive, industrial, personal electronics and communication infrastructure applications.The reshaping and modernization of ST’s manufacturing operations aim to achieve two main objectives: prioritizing planned investments towards future-ready infrastructure such as 300mm silicon and 200mm silicon carbide wafer fabs to enable them to reach a critical scale and maximizing the productivity and efficiency of legacy 150mm capabilities and mature 200mm capabilities. In parallel, ST plans to continue to invest in upgrading the technology used across its operations, deploying additional AI and automation for additional efficiency in technology R&D, manufacturing, reliability and qualification processes, with a continued focus on sustainability.
Strengthening ST’s manufacturing ecosystem
Over the next three years, the reshaping of ST’s manufacturing footprint will design and strengthen ST’s complementary ecosystems: in France around digital technologies, in Italy around analog and power technologies and in Singapore on mature technologies. The optimization of these operations aim to achieve full capacity utilization and drive technological differentiation to compete globally. As announced previously, each of ST’s current sites will continue to play a long-term role within the company’s global operations.Building 300mm silicon megafabs in Agrate and Crolles
The Agrate (Italy) 300mm fab will continue to be scaled up, with the aim to become ST’s flagship high-volume manufacturing facility for smart power and mixed signal technologies. The plan is to double its current capacity to 4,000 wafers per week (wpw) by 2027, with planned modular expansions increasing capacity up to 14,000 wpw, depending on market conditions. As we increase our focus on 300mm manufacturing, the Agrate 200mm fab will refocus on MEMS.The Crolles (France) 300mm fab will be further cemented as the core of ST’s digital products ecosystem. The plan is to increase capacity to 14,000 wpw by 2027 with planned modular expansions increasing capacity up to 20,000 wpw, depending on market conditions. In addition, we will convert the Crolles 200mm fab to support Electrical Wafer Sorting high volume manufacturing and advanced packaging technologies, hosting activities that do not exist today in Europe. The focus will be on next-generation leading technologies including optical sensing and silicon photonics.
Specialized Manufacturing and Competence Center for Power Electronics in Catania
Catania will continue to serve as a center of excellence for power and wide-bandgap semiconductor devices. The development of the new Silicon Carbide Campus is progressing as planned, with production of 200mm wafers set to begin in Q4 2025, reinforcing ST’s leadership in next-generation power technologies. Our resources supporting Catania’s current 150mm and EWS capabilities will be refocused on 200mm silicon carbide and silicon power semiconductor production, including GaN-on-silicon, reinforcing ST’s leadership in next-generation power technologies.Optimizing Other Manufacturing Sites
Rousset (France) will remain focused on 200mm manufacturing, with additional volumes reallocated from other sites enabling full saturation of existing manufacturing capacity for optimized efficiency.Tours (France) will remain focused on its 200mm silicon production line for select technologies, while other activities – including legacy 150mm manufacturing activities – will be transferred to different ST sites, and it will also remain a center of competence for GaN, mainly on epitaxy. The Tours site will also host a new activity: panel-level-packaging, one of the major enablers of chiplets, a technology for complex semiconductor applications that will be key for ST in the future.
Ang Mo Kio (Singapore), ST’s high-volume fab for mature technologies, will remain focused on 200mm silicon manufacturing and will also host our consolidated global legacy 150mm silicon capabilities.
Kirkop (Malta), ST’s high-volume test and packaging fab in Europe will be upgraded, with the addition of advanced automated technologies which will be key to support next-generation products.
Workforce and skills evolution
As ST reshapes its manufacturing footprint over the next three years, the workforce size and required skill sets will evolve. Advanced manufacturing will shift roles from legacy processes involving repetitive manual tasks to a stronger focus on process control, automation, and design. ST will manage this transition through voluntary measures, with a continued commitment to ongoing constructive dialogue and negotiations with employee representatives in accordance with applicable national regulations. Based on current projections, the program is expected to see up to 2,800 people leaving the company globally on a voluntary basis, on top of normal attrition. These changes are expected to occur mainly in 2026 and 2027. Regular updates will be provided to stakeholders as the program progresses.Original – STMicroelectronics
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STMicroelectronics and Innoscience announced the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
The companies have agreed on a joint development initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and industrial power systems and many more applications in the coming years. In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing capacity in China for its own GaN wafers. The common ambition is for each company to expand their individual offering in GaN with supply chain flexibility and resilience to cover all customers’ requirements in a wide range of applications.
Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.
GaN power devices leverage fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses, which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint; these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.
Original – STMicroelectronics
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / TOP STORIES / WBGMazda and ROHM Collaborate to Develop Automotive Components Utilizing Next-Generation Semiconductors
March 28, 2025
3 Min ReadMazda Motor Corporation and ROHM Co., Ltd. have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.
Since 2022, Mazda and ROHM have been advancing the joint development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.
GaN is attracting attention as a next-generation material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturization of components through high-frequency operation.
Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in weight reduction and design. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.
“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars. Through collaboration with partners who share our vision, Mazda will continue to deliver products filled with the ‘joy of driving’ that allows customers to truly enjoy driving, even in electric vehicles.”
“We are very pleased to collaborate with Mazda, which pursues the ‘joy of driving,’ in the development of automotive components for electric vehicles” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM. “ROHM’s EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN. By collaborating with Mazda, which aims to create ‘cars that coexist sustainably with the earth and society,’ we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”
Original – ROHM
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Wolfspeed, Inc. announced the appointment of Robert Feurle as Chief Executive Officer (CEO), effective May 1, 2025, following a comprehensive internal and external search by the Board of Directors. Feurle succeeds Thomas Werner, who is serving as interim Executive Chairman and will return as Chairman of the Board following the transition.
Feurle brings more than 20 years leading global organizations that develop the most advanced power semiconductor solutions in automotive and other high voltage applications, including both silicon and silicon carbide. A citizen of both the United States and Germany, Feurle will be returning to the United States where he previously spent a decade in executive roles at Micron Technology and will be relocating to the Company’s headquarters in Durham, North Carolina, where he will work closely with Werner to ensure a smooth transition.
Most recently, he served as Executive Vice President and General Manager of the Opto Semiconductors Business Unit at ams-OSRAM AG, where he was responsible for managing more than 10,000 employees in sites and factories around the world. There, he expanded market share and accelerated the introduction of cutting-edge LED and Laser products into automotive and new advanced LED applications. Previously, at Infineon Technologies, Micron Technology, Qimonda, and Siemens, Feurle successfully managed strategic initiatives that enhanced competitiveness and increased revenue growth in challenging global markets.
“We are excited to welcome Robert to Wolfspeed to lead the Company into its next chapter. With a history of delivering significant operational enhancements and profitability improvements, and deep industry expertise, we are confident that Robert is the right individual to take the helm during this stage in the Company’s lifecycle. His history of driving success and operational excellence in each of his previous roles is a significant contributor to our decision to appoint him as CEO. The Board and I look forward to working closely with Robert to successfully navigate near-term market dynamics and ultimately position the Company for long-term value creation,” said Thomas Werner, Executive Chairman.
“I am grateful for the opportunity to lead Wolfspeed during such a transformative period. During my tenure at Infineon, I became intimately familiar with the silicon carbide industry and saw firsthand Wolfspeed’s impressive leadership in the space. I believe we have just begun to scratch the surface of the vast potential of silicon carbide. Wolfspeed’s world-class facilities, exceptional talent, and robust intellectual property, position us to maintain and expand our market leadership,” said Feurle.
Throughout his career, Feurle has consistently driven successful growth strategies, innovative product development, and market expansion initiatives. At ams-OSRAM, Feurle significantly enhanced the market presence of the Opto Semiconductors division through accelerated innovation in advanced compound semiconductor solutions.
Previously at Infineon Technologies, he strategically expanded market opportunities by spearheading new product introductions in the field of IGBT and silicon carbide technologies and leading a global business unit focused on competitive differentiation and profitable growth. He was also part of the team at Infineon supporting the proposed acquisition of the Wolfspeed operations in 2016. His deep experience in market-driven technology innovation and strategic business scaling makes him uniquely suited to advance Wolfspeed’s global leadership in silicon carbide technology.
Feurle joins the company as it continues to focus on improving financial performance and accelerating its path to generate positive free cash flow, take aggressive steps to strengthen its balance sheet and raise cost-effective capital required to support its long-term growth plan.
“With all of the Company’s competitive advantages I feel very confident that we will be able to work through this transformative period to refresh the operating plan, improve financial performance and accelerate our path to positive free cash flow.” Feurle continued, “I look forward to working closely with the Board and our talented team to deliver exceptional value to all of our stakeholders.”
Robert Feurle is a semiconductor industry veteran, bringing more than 20 years of experience in driving operational excellence and financial strength. Prior to his appointment as Wolfspeed’s CEO, Feurle’s recent experience includes serving as Executive Vice President of the Opto Semiconductor business unit at ams-OSRAM AG and Vice President and General Manager of Integrated Solutions and Discretes at Infineon Technologies AG. He also held various leadership and operational roles at Micron Technology, Inc., Qimonda AG and Siemens AG.
Feurle holds a degree in Electrical Engineering from the University of Applied Sciences in Konstanz, Germany.
Original – Wolfspeed
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Thermo Fisher Scientific Inc., the world leader in serving science, announced the launch of the Thermo Scientific Vulcan™ Automated Lab, a groundbreaking solution designed to drive a new era of process development and control in semiconductor manufacturing. The seamlessly integrated system is designed to enhance productivity, increase yield and reduce operating costs for semiconductor manufacturers.
The rapid evolution and miniaturization of semiconductor technology is leading to unprecedented demand for atomic-scale transmission electron microscopy (TEM) metrology data. Manufacturers now face the challenge of scaling laboratory operations quickly, while maintaining high efficiency and productivity to meet the growing global need for semiconductors that power everything from consumer electronics to autonomous vehicles.
“The increasing complexity of digital technologies, which requires more sophisticated semiconductors, provides us with an incredible opportunity to enable the success of our semiconductor customers through advanced imaging analysis technology,” said Marc N. Casper, chairman, president and chief executive officer of Thermo Fisher. “By leveraging our deep expertise in electron microscopy and auxiliary instruments with artificial intelligence capabilities, our new solution is well-positioned to help semiconductor manufacturers drive efficiencies in their operations.”
Drawing on decades of electron microscopy (EM) innovation, the Thermo Scientific Vulcan Automated Lab represents a step change in atomic-scale data acquisition by integrating robotic handling with artificial intelligence-enhanced instruments for semiconductor analysis. This enables consistent and efficient standards for TEM metrology workflows, while delivering high-volume data of exceptional quality and reducing operator burden.
The solution has also been designed to help address the time-to-data gap resulting from traditional TEM analysis methods. By streamlining metrology data collection using a combination of materials handling automation and data connectivity, the Thermo Scientific Vulcan Automated Lab accelerates the data collection process and creates an integrated workflow between the semiconductor lab and the fabrication facility.
Original – Thermo Fisher Scientific
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Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles.
The X.PAK package further enhances the thermal performance of Nexperia’s SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, Nexperia’s X.PAK package enables low inductance for surface mount components and supports automated board assembly.
The new X.PAK packaged devices deliver class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” said Katrin Feurle, Senior Director and Head of SiC Discretes & Modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”
The initial portfolio includes products with RDS(on) values of 30, 40, 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17 mΩ will be released in April 2025. An automotive qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, as well as further RDson classes like 80 mΩ.
Original – Nexperia
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The 600 V CoolMOS™ 8 high-voltage superjunction (SJ) MOSFET product family from Infineon Technologies AG has allowed Enphase Energy, a global energy technology company and a leading supplier of microinverter-based solar and battery systems, to simplify its system design and reduce assembly costs. By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS(on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device efficiency and boosts power density. In addition, the company achieved MOSFET related cost savings.
“We are thrilled to partner with Enphase and support their mission to deliver innovative solar energy solutions,” said Richard Kuncic, Senior Vice President and General Manager at Infineon. “Our 600 V CoolMOS 8 SJ MOSFETs are designed to provide superior efficiency, reliability, and cost savings, which aligns perfectly with Enphase’s and Infineon’s commitment to advancing the performance and affordability of renewable energy technologies, further driving decarbonization.”
“Collaborating with Infineon has allowed us to leverage their CoolMOS 8 SJ MOSFET technology to enhance the performance and cost-effectiveness of our microinverter systems,” said Aaron Gordon, Senior Vice President and General Manager of the Systems Business Unit at Enphase Energy. “This partnership underscores our dedication to innovation and excellence in the solar energy industry, and we are excited about the significant improvements in power density and cost savings that we are now able to offer our customers.”
Infineon’s latest CoolMOS 8 MOFETs at 600 V are leading the way in high-voltage superjunction MOSFET technology worldwide, setting the standard for both technology and price performance on a global scale. The technology increases overall system performance and further reinforces decarbonization in applications such as chargers and adapters, solar and energy storage systems, EV charging, and uninterruptible power supplies (UPS).
The CoolMOS 8 SJ MOSFETs have an 18 percent lower gate charge than the CFD7 and 33 percent lower than the P7 series. A reduced gate charge allows for less electric charge to be applied to the gate of a MOSFET to switch it from the off state (non-conducting) to the on state (conducting), enabling a more energy-efficient system performance.
Additionally, the CoolMOS 8 SJ MOSFETs have the quickest turn-off time in the market and their thermal performance has been improved by 14 to 42 percent compared to the previous generation. The 600 V CoolMOS 8 SJ technology is equipped with an integrated fast body diode and is available in SMD-QDPAK, TOLL, and Thin-TOLL 8×8 packages, making it suitable for a wide range of consumer and industrial applications.
Samples for the portfolio extension of 600 V CoolMOS 8 SJ MOSFETs and 650 V CoolMOS 8 SJ MOSFETs are available from early April on.
Original – Infineon Technologies
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onsemi introduced the first generation of its 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) based SPM 31 intelligent power modules (IPMs). onsemi EliteSiC SPM 31 IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to using Field Stop 7 IGBT technology, resulting in lower total system cost than any other leading solution on the market.
Their improved thermal performance, reduced power losses and ability to support fast switching speeds makes these IPMs ideally suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, variable frequency drives (VFDs), and industrial pumps and fans.
The EliteSiC SPM 31 IPMs offer several current ratings from 40A to 70A. Complemented by onsemi’s IGBT SPM 31 IPM portfolio, covering low currents from 15A to 35A, onsemi now provides the industry’s broadest range of scalable and flexible integrated power module solutions in a small package.
In 2023, operations of residential and commercial buildings accounted for 27.6% of U.S. end-use energy consumption. As electrification and AI adoption grow, particularly with the construction of more AI data centers increasing energy demands, the need to reduce the energy consumption of applications in this sector is becoming more critical. Power semiconductors capable of efficiently converting electric power are the key in this transition to a low-carbon-emissions world.
With the number and size of data centers growing, the demand for EC fans is expected to rise. These cooling fans maintain the ideal operating environment for all equipment in a data center and are essential for accurate, error-free data transmission. The SiC IPM ensures the EC fan operates reliably and at its highest efficiency.
Like many other industrial applications such as compressor drives and pumps, EC fans require higher power density and efficiency than existing larger IGBT solutions. By switching to EliteSiC SPM 31 IPMs, customers can benefit from a smaller footprint, higher performance, and a simplified design due to high integration, resulting in shortened development time and lower total system cost in addition to reduced GHG emissions. For example, compared to a system solution that uses a current IGBT power integrated module (PIM) with power losses of 500W at 70% load, implementing highly efficient EliteSiC SPM 31 IPMs could reduce the annual energy consumption and cost per EC fan by 52%.
The fully integrated EliteSiC SPM 31 IPM consists of an independent high side gate driver, low voltage integrated circuit (LVIC), six EliteSiC MOSFETs and a temperature sensor (voltage temperature sensor (VTS) or thermistor). The module is based on the industry-leading M3 SiC technology that shrinks die size and is optimized for hard-switching applications with improved short-circuit withstand time (SCWT) performance when used in the SPM 31 package, making them suitable for inverter motor drives for industrial use. The MOSFETs are configured in a three-phase bridge with separate source connections for the lower legs for maximum flexibility in the choice of control algorithm.
In addition, the EliteSiC SPM 31 IPMs include the following benefits:
- Low loss, short-circuit-rated M3 EliteSiC MOSFETs to prevent catastrophic equipment and component failures such as electric shock or fire.
- Built-in under-voltage protection (UVP) to protect against damage to the device when voltage is low.
- As the peer-to-peer product of FS7 IGBT SPM 31, customers can choose between various current ratings while using the same PCB board.
- UL certified to meet national and international safety standards
- Single-grounded power supply offering better safety, equipment protection and noise reduction.
- Simplified design and reduced size of customer boards due to
- Included controls for gate drivers and protections
- Built-in bootstrap diodes (BSDs) and resistors (BSRs)
- Internal boost diodes provided for high side gate boost drive
- Integrated temperature sensor (VTS output by LVIC and/or thermistor)
- Built-in high-speed high-voltage integrated circuit
Original – onsemi
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Navitas Semiconductor has announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies. Targeted applications range widely and opens up multi-billion dollar market opportunities across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage and motor drives. The recorded launch event video can be viewed here.
Over 70% of today’s high-voltage power converters use a ‘two-stage’ topology. For example, a typical AC-DC EV OBC implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky ‘DC-link’ buffering capacitors. The resulting systems are large, lossy, and expensive. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and in the process, eliminates the bulky capacitors and input inductors – the ultimate solution in EV OBCs.
A leading EV and solar micro-inverter manufacturer have already begun their implementation of single-stage BDS converters to improve efficiency, size, and cost in their systems. GaNFast-enabled single-stage converters achieve up to 10% cost savings, 20% energy savings, and up to 50% size reductions.
The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this landmark – the bi-directional GaNFast power IC.
Previously, two discrete, ‘back-to-back’ single switches had to be used, but new bi-directional GaNFast ICs are leading-edge, single-chip designs (monolithic integration) with a merged drain structure, two gate controls, and a patented, integrated, active substrate clamp. One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs.
The initial 650 V bi-directional GaNFast ICs include NV6427 (100 mΩ RSS(ON) typ.) and NV6428 (50 mΩ RSS(ON) typ) in thermally enhanced, top-side-cooled TOLT-16L (Transistor Outline Leaded Topside-cooled) packaging. The product family will be extended into lower RSS(ON) offerings in the future.
The new, high-speed IsoFast devices are galvanically isolated, high-speed drivers optimized to drive bi-directional GaN. With 4x higher transient immunity than existing drivers (up to 200 V/ns) and no external negative bias supply needed, they deliver reliable, fast, accurate power control in high-voltage systems. Initial parts are the NV1702 (dual, independent-channel, digital, isolated bi-directional GaN gate driver) and NV1701 (half-bridge GaN digital isolator) in SOIC-16N and SOIC-14W packages.
“These ICs are a truly game-changing and disruptive technology both at the semiconductor and at the system level. They not only deliver improved efficiency, power density, simplicity, and system costs but will also transform multiple multi-billion-dollar markets in the most sustainable way possible.” Gene Sheridan, CEO and co-founder of Navitas commented. “The future of our electrified planet is bi-directional energy flow. From all renewable energy sources, the power grid, and all electrified applications, such as ESS, solar and EVs, energy should flow efficiently & bi-directionally, creating a critical new currency for our future planet. Single-stage BDS converters are the key for this inflection”.
Bi-directional GaNFast ICs (NV6427 and NV6428) are fully qualified and immediately available in mass-production quantities. IsoFast (NV1701 and NV1702) samples are available now to qualified customers.
Single-stage evaluation boards and user guide showcasing both IsoFast and bi-directional GaNFast ICs are available for qualified customers.
Navitas will feature bi-directional GaNFast ICs and IsoFast at the APEC 2025 power electronics conference in Atlanta, March 17th-19th, booth 1107.
Original – Navitas Semiconductor
