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Texas Instruments (TI) broke ground on its new 300-mm semiconductor wafer fabrication plant (or “fab”) in Lehi, Utah. Joined by Utah Governor Spencer Cox, state and local elected officials, as well as community leaders, TI President and Chief Executive Officer Haviv Ilan celebrated the first steps toward construction of the new fab, LFAB2, which will connect to the company’s existing 300-mm wafer fab in Lehi. Once completed, TI’s two Utah fabs will manufacture tens of millions of analog and embedded processing chips every day at full production.
“Today we take an important step in our company’s journey to expand our manufacturing footprint in Utah. This new fab is part of our long-term, 300-mm manufacturing roadmap to build the capacity our customers will need for decades to come,” said Ilan. “At TI, our passion is to create a better world by making electronics more affordable through semiconductors. We are proud to be a growing member of the Utah community, and to manufacture analog and embedded processing semiconductors that are vital for nearly every type of electronic system today.”
In February, TI announced its $11 billion investment in Utah, marking the largest economic investment in state history. LFAB2 will create approximately 800 additional TI jobs as well as thousands of indirect jobs, with first production available as early as 2026.
“TI’s growing manufacturing presence in Utah will be transformative for our state, creating hundreds of good-paying jobs for Utahns to manufacture critically important technology,” said Utah Governor Spencer Cox. “We are proud that semiconductors – made in Utah by Utahns – will power the innovation that is foundational to our country’s economic and national security.”
As part of TI’s commitment to education, the company will invest $9 million dollars in the Alpine School District to develop the state’s first Science, Technology, Engineering and Math (STEM) learning community for all students in kindergarten through 12th grade. The multiyear program will embed STEM concepts more deeply into coursework for the district’s 85,000 students and provide STEM-oriented professional development for its teachers and administrators. The district-wide program will equip students with essential STEM skills, such as critical thinking, collaboration and creative problem-solving to succeed after graduation.
“We are excited this partnership will help our students develop essential knowledge and skills, preparing them for success in life and possible careers in the technology sector,” said Alpine School District Superintendent, Dr. Shane Farnsworth. “Working together with the city of Lehi, Texas Instruments, and our schools, this collaborative investment will impact students and their families for many generations to come.”
TI has a long-standing commitment to responsible, sustainable manufacturing. LFAB2 will be one of the company’s most environmentally efficient wafer fabs, designed to meet one of the Leadership in Energy and Environmental Design (LEED) building rating system’s highest levels of structural efficiency and sustainability: LEED Gold version 4.
LFAB2 has a goal to be powered by 100% renewable electricity, and advanced 300-mm equipment and processes in Lehi will further reduce waste, water and energy consumption. In fact, LFAB2 is expected to recycle water at nearly twice the rate of TI’s existing fab in Lehi.
LFAB2 will complement TI’s existing 300-mm wafer fabs, which include LFAB1 (Lehi, Utah), DMOS6 (Dallas), and RFAB1 and RFAB2 (both in Richardson, Texas). TI is also building four new 300-mm wafer fabs in Sherman, Texas (SM1, SM2, SM3 and SM4), with production from the first fab as early as 2025.
TI’s manufacturing expansions, with anticipated support from the CHIPS and Science Act, will provide reliable supply of analog and embedded processing products. These investments in manufacturing and technology illustrate the company’s commitment to long-term capacity planning.
Original – Texas Instruments
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Power Integrations released the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN™ switch. InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs, which feature synchronous rectification, FluxLink™ safety-isolated feedback and an array of switch options: 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V and now 1250 V varieties.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
Radu Barsan, vice president of technology at Power Integrations, said: “Power Integrations continues to advance the state of the art in high-voltage GaN technology development and commercial deployment, rendering even the best high-voltage silicon MOSFETs obsolete along the way. We were first to market with high-volume shipments of GaN-based power-supply ICs in 2019, and earlier this year introduced a 900-volt version of our GaN-based InnoSwitch products.
Our ongoing development of higher voltage GaN technology, illustrated here by our new 1250 V devices, extends the efficiency benefits of GaN to an even wider range of applications, including many currently served by silicon-carbide technology.”
Designers using the new InnoSwitch3-EP 1250 V ICs can confidently specify an operating peak voltage of 1000 V, which allows for industry-standard 80 percent de-rating from the 1250 V absolute maximum. This provides significant headroom for industrial applications and is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
Original – Power Integrations
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Transphorm, Inc. introduced the SuperGaN® TOLT FET. With an on-resistance of 72 milliohms, the TP65H070G4RS transistor is the industry’s first top-side cooled surface mount GaN device in the JEDEC-standard (MO-332) TOLT package. The TOLT package offers flexibility of thermal management to customers where system requirements do not allow for the more conventional surface mount devices with bottom-side cooling.
The thermal performance of the TOLT is similar to that of the widely used, thermally robust TO-247 through-hole packages and delivers the added benefit of highly efficient manufacturing processes enabled by SMD-based printed circuit board assembly (PCBA).
The TP65H070G4RS leverages Transphorm’s robust, high performance 650-volt normally-off d-mode GaN platform offering improved efficiency over silicon, silicon carbide, and other GaN offerings via lower gate charge, output capacitance, crossover loss, reverse recovery charge, and dynamic resistance.
The SuperGaN platform advantages combined with the TOLT’s better thermals and system assembly flexibility results in a high performance, high reliability GaN solution for customers seeking to bring to market power systems with higher power density and efficiency at an overall lower power system cost.
Transphorm is engaged with multiple global partners for high power GaN, including lead customers in server and storage power, a global leader in the energy/microinverter space, an innovative manufacturer of off-grid power solutions, and a leader in satellite communications.
“Surface mount devices such as the TOLL and the TOLT offer various benefits such as lower internal inductance as well as simpler board mounting during manufacturing. The TOLT adds to that more flexible overall thermal management with through-hole like thermal performance by using top-side cooling,” said Philip Zuk, SVP Business Development and Marketing, Transphorm.
“These devices are commonly found in mid to high power system applications for key market segments including high performance computing (Server, Telecom, AI Power), Renewables and Industrial, and Electric Vehicles, some of which our GaN technology already powers today. we’re very excited to enable our customers to realize additional system level benefits with TOLT SuperGaN solutions.”
Today’s product release comes on the heels of Transphorm’s recent introduction of its three new TOLL FETs. Addition of the TOLT expands the company’s product offerings yet again. Its availability highlights Transphorm’s commitment to supporting customer preferences by making its SuperGaN platform accessible in various packages across the widest power range.
Device Specifications
SuperGaN devices lead the market with unmatched:- Reliability at < 0.05 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode normally-off GaN
- Drive flexibility with standard off-the-shelf silicon drivers
The robust 650 V SuperGaN TOLT device is JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with an integrated low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.
Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H070G4RS 10 x 15 72 85 4 29 Original – Transphorm
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MCC Semi expanded its growing auto-grade portfolio with three new 60V N-channel MOSFETs: MCU75N06YHE3-TP, MCG60N06YHE3-TP, and MCAC65N06YHE3-TP.
Leveraging split-gate trench (SGT) MOSFET technology, MCC’s new products deliver optimal performance, efficiency, and thermal management, making them the intelligent choice for a range of demanding auto applications.
With on-resistance as low as 4.8mΩ, these AEC-Q101 qualified MOSFETs guarantee optimal power flow while significantly reducing power losses.
DFN333, DFN5060, and DPAK package options enable design flexibility and compatibility with various automotive systems.
Original – Micro Commercial Components
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STMicroelectronics has released the ACEPACK DMT-32 family of silicon carbide (SiC) power modules in a convenient 32-pin, dual-inline, molded, through-hole package for automotive applications. Targeted at systems such as on-board chargers (OBC), DC/DC converters, fluid pumps and air conditioning, they deliver advantages including high power density, very compact design, and simplified assembly. The product family enhances flexibility for system designers by presenting a choice of four-pack, six-pack, and totem-pole configurations.
The modules contain 1200V SiC power switches that leverage ST’s state-of-the-art, second- and third-generation SiC MOSFET technology ensuring low RDS(on) values. The devices deliver efficient switching performance with minimal dependence on temperature to ensure high efficiency and reliability at converter system level.
Leveraging ST’s proven, robust ACEPACK technology, the modules reduce overall system- and design-development costs while ensuring outstanding reliability. The package technology features a high-performance aluminum nitride (AlN) insulated substrate for excellent thermal performance. There is also an integrated NTC sensor that provides temperature monitoring for thermal protection.
The first product in ACEPACK DMT-32, introduced today with ramp-up to volume production since Q4’23, is M1F45M12W2-1LA. The M1F80M12W2-1LA, M1TP80M12W2-2LA, M1P45M12W2-1LA, M1P80M12W2-1LA, M1P30M12W3-1LA are sampling now with ramp-up to volume production starting from Q1’24.
Original – STMicroelectronics
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Infineon Technologies AG announced the closing of the acquisition of GaN Systems Inc. (“GaN Systems”). The Ottawa-based company brings with it a broad portfolio of gallium nitride (GaN)-based power conversion solutions and leading-edge application know-how. All required regulatory clearances have been obtained and GaN Systems has become part of Infineon effective as of the closing.
“GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization,” said Jochen Hanebeck, CEO of Infineon. “The acquisition of GaN Systems significantly accelerates our GaN roadmap and further strengthens Infineon’s leadership in power systems through mastery of all relevant power semiconductor technologies. We welcome our new colleagues from GaN Systems to Infineon.”
Infineon now has a total of 450 GaN experts and more than 350 GaN patent families, which expands the company’s leading position in power semiconductors and considerably speeds up time-to-market. Both companies’ complementary strengths in IP and application understanding as well as a well-filled customer project pipeline put Infineon in an excellent position to address various fast-growth applications.
On 2 March 2023, Infineon and GaN Systems announced that the companies had signed a definitive agreement under which Infineon would acquire GaN Systems for US$830 million. The acquisition, an all-cash transaction, was funded from existing liquidity.
Original – Infineon Technologies
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onsemi announced the completed expansion of its state-of-the-art, world-largest silicon carbide (SiC) fabrication facility in Bucheon, South Korea. At full capacity, this fab will be able to manufacture more than one million 200 mm SiC wafers per year.
To support the ramp in SiC manufacturing capacity, onsemi plans to hire up to 1,000 local employees over the next three years to fill the mostly highly technical positions – a more than 40% increase over the present workforce of about 2,300.
Silicon carbide devices are a critical component for power conversion in electric vehicles (EVs), energy infrastructure and high-power EV chargers. The rapidly growing demand for these products has created a surge in demand for SiC chips, with demand outpacing supply for the foreseeable future. The expansion of the Bucheon fab addresses the pressing need for additional production capacity, allowing onsemi to continue to provide supply assurance for its customers and strengthen its leadership in intelligent power solutions.
Construction of the new advanced 150 mm/200 mm SiC fab line along with the high-tech utility building and adjacent parking garage began in the middle of 2022 and was completed in September 2023. The expansion of the 150 mm/200 mm SiC Epi and wafer fab emphasizes onsemi’s focus on building out its vertically integrated silicon carbide manufacturing supply chain at brownfield locations. The Bucheon SiC line is starting with the production of 150 mm wafers and will be converted to 200 mm in 2025 upon qualification of the 200 mm SiC process.
onsemi’s leadership was joined by a delegation of dignitaries led by Vice Governor for Economy of the Gyeonggi-Do Taeyoung Yeom; followed by Bucheon City Mayor YongEek Cho; National Assembly delegates; and Bucheon Chamber of Commerce and Industry Chairman JongHuem Kim. Also in attendance were representatives from local communities, customers, suppliers and the semiconductor industry.
onsemi CEO Hassane El-Khoury opened the event, noting, “The 150 mm/200 mm SiC wafer fab in Bucheon is critical to the continued success of our fully integrated SiC supply chain, enabling us to support the acceleration of electrification globally. The last five years have shown what extraordinary performance our Bucheon team is capable of, and what we can achieve when we work together with governmental agencies toward the common goal of a more sustainable future.”
“I am truly impressed by onsemi’s diligent and yet fast execution of its strategic plan to expand the Bucheon SiC wafer fab,” said Bucheon City Mayor YongEek Cho. “Not only will the city of Bucheon benefit from the creation of new employment opportunities in technology, but it will also be a part of laying the foundation for a sustainable ecosystem through electrification.”
Original – onsemi
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LATEST NEWS / PROJECTS / TOP STORIESSamsung Electronics to Provide Service Across a Variety of Solutions, Including Power Semiconductors
October 19, 2023
3 Min ReadSamsung Electronics hosted Samsung Foundry Forum (SFF) 2023 Europe and unveiled its advanced and wide ranging automotive process solutions, from the most advanced 2-nanometer process to the 8-inch legacy process.
Alongside its customers and Samsung Advanced Foundry Ecosystem (SAFE) partners, Samsung Electronics showcased the latest technological trends and its business strategy tailored to the European market.
“Samsung Foundry is driving innovation in next-generation solutions to build an expanded portfolio that meets the growing needs of our automotive customers, especially as the era of electric vehicles becomes a reality,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. “We are strengthening our readiness to provide customers with distinguished service across a variety of solutions, including power semiconductors, microcontrollers and advanced AI chips for autonomous driving.”
Since participating in IAA Mobility 2023 for the first time in September, Samsung Electronics is strengthening engagement and partnership in specialty processes for automotive customers in the European market, further solidifying its status as a leading foundry partner for the industry.
Pioneering New Applications With Industry’s Most Advanced eMRAM
In order to meet the needs of the latest advancements in the automotive market, Samsung is setting out to develop the industry’s first 5-nanometer eMRAM for next-generation automotive technology. eMRAM is a next-generation memory semiconductor used for automotive applications that enables high read and write speeds as well as superior heat resistance.
Since developing and mass producing the industry’s first 28nm FD-SOI based eMRAM in 2019, Samsung Electronics has been developing 14nm for the FinFET process based on AEC-Q100 Grade 1. Samsung Foundry plans to expand its eMRAM portfolio by adding 14nm by 2024, 8nm by 2026, and 5nm by 2027.
Samsung’s 8nm eMRAM shows potential to deliver a 30% increase in density and 33% increase in speed, compared to the 14nm process.
Tackling the Market With Automotive Process Solutions From Cutting-Edge to Legacy
The company announced its advanced process roadmap, highlighting its plans to complete mass production readiness for its 2nm process for automotive applications by 2026.
Samsung Electronics is also bolstering its readiness to serve customer needs by expanding its 8-inch BCD (Bipolar-CMOS-DMOS) process portfolio. The BCD process combines the strengths of three different process technologies: Bipolar (B), CMOS (C), and DMOS (D) on one chip and is most commonly used in the production of power semiconductors.
Samsung Electronics plans to expand its current 130nm automotive BCD process to add 90nm by 2025. The 90nm BCD process is expected to bring a 20% decrease in chip area compared to the 130nm process.
Implementing Deep Trench Isolation (DTI) technology, which reduces the distance between each transistor to maximize the performance of power semiconductors, Samsung Foundry will be able to apply a greater voltage of 120V instead of 70V to a wider range of applications. This will enable readiness to provide a process development kit (PDK) that implements 120V to the 130nm BCD process by 2025.
Leading ‘Beyond-Moore’ Innovation Through Advanced Packaging Alliance
Samsung established a Multi-Die Integration (MDI) Alliance by collaborating with its SAFE partners as well as major players in memory, package substrate, and testing.
As part of an industry-wide partnership with 20 partners, Samsung is leading the development of 2.5D and 3D packaging solutions customized for all applications from automotive to high-performance computing (HPC).
Samsung Electronics hosted the annual Samsung Foundry Forum 2023 in the United States on June 27-28, in South Korea on July 4, and in Japan on October 17. The content from the forum will be available on the Samsung Semiconductor website for worldwide access to all visitors beginning November 2.
Original – Samsung Electronics
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Renesas Electronics Corporation announced a new organizational structure and leadership team appointments. These changes will take effect January 1, 2024, and will support the company in its next phase of growth and development to become the leader in embedded semiconductor solutions.
1. Establishment of four technology-based product groups
Renesas is establishing a technology-based organization designed to provide more comprehensive and tailored solution offerings. This is aimed at effectively addressing the converging needs of customers and markets by leveraging our embedded processing, analog, power, and connectivity expertise to create complete solutions. The new organization will also enable the company to capitalize on the scale advantages by fostering more cross selling opportunities and broader customer coverage. As part of these changes, Renesas’ businesses will be restructured into four new product groups.
- Analog & Connectivity
Davin Lee, currently Vice President of Advanced Analog Division, will assume the role of Senior Vice President and General Manager of Analog & Connectivity. Under Davin’s leadership, the group will be responsible for analog products as well as the company’s vast portfolio of connectivity products.
- Embedded Processing
Toshihiko Seki, currently Vice President of MCU Device Solution Division, will assume the role of Senior Vice President and General Manager of Embedded Processing. He will be responsible for Renesas’ entire standard catalog embedded processing products. The group is designed to accelerate the company’s efforts to provide more catalog products and solutions to go deeper and broader with new and existing customers.
- High Performance Computing
Vivek Bhan, who currently holds the position of Senior Vice President and Co-General Manager of High Performance Computing, Analog and Power Solutions Group, will assume the role of Senior Vice President and General Manager of High Performance Computing. He will be responsible for the company’s custom and application-specific high computing products.
- Power
Chris Allexandre who currently serves as Senior Vice President, Chief Sales & Marketing Officer (CSMO) and Head of the Global Sales and Marketing Unit will take on a new role as Senior Vice President and General Manager of Power. Chris will be responsible for overseeing Renesas’ power management and discrete products and executing the company’s power strategies.
2. Establishment of new Software & Digitalization team and centralization of Operations, Engineering and key foundational organizations
In addition to the establishment of four product groups, Renesas has also taken steps to streamline its organizational structure by establishing new groups of functions. The new organizations will serve as centralized foundations across all lines of business to better support customers, enhance performance and add value.
- Software & Digitalization
As the company aims to transform the way customers design solutions through an innovative cloud-based platform, Renesas has recently welcomed Buvna Ayyagari as Vice President of the new Software & Digitalization organization to spearhead this effort. Buvna will be responsible for driving Renesas’ unified vision for software and digitalization, ensuring they become a powerful differentiator for the company.
Buvna brings rich and multi-disciplinary expertise across the semiconductor industry from Applied Materials, Synopsys and Intel. She held leadership positions in Engineering, Field Applications Engineering, Marketing, Pre- and Post-sales Customer Support and drove products from definition to high volume. Buvna has experiences in leading digital transformations and has helped to build a team from the ground up to define a software platform, making her well-equipped to continue to drive Renesas’ excellence in software and digitalization.
- Operations
Renesas is accelerating efforts to drive operational excellence to improve service, quality and profitability. Dr. Sailesh Chittipeddi, currently Executive Vice President, General Manager of Embedded Processing, Digital Power and Signal Chain Solutions Group, will take on a new role to oversee the new operations organization. This brings Renesas’ entire manufacturing, supply chain and procurement into a single organization chartered to lead the company’s operational and strategic initiatives to provide exceptional customer experiences.
- Engineering
Renesas is creating a centralized engineering organization to solidify Renesas’ engineering foundation, from product to test engineering. This new organization will direct the development and execution of the company’s technology and product roadmaps. Takeshi Kataoka, Senior Vice President and Co-General Manager of High Performance Computing, Analog and Power Solutions Group, will newly head this Engineering organization.
- Quality Assurance
Takeshi Kataoka will also oversee the Quality Assurance function as Senior Vice President and Head of Engineering and Quality Assurance. His experience and profound expertise in leading Renesas’ automotive semiconductor business will help the company to continue to assure supreme quality levels throughout its products and solutions.
- Sales & Marketing
Bobby Matinpour, who currently serves as Vice President of Global Strategic Vertical & Regional Sales, will succeed Chris Allexandre in the role of Senior Vice President, CSMO and Head of Sales & Marketing.
These leaders in addition to leaders of each of four product groups will report directly to the CEO. This will allow them to have greater influence on Renesas’ strategy and execution, while enhancing accountability.
Hiroto Nitta will retire from his role of Senior Vice President of Information Technology. In addition to his current role, Nitta served multiple managerial positions at Renesas including Vice President and Deputy General Manager of Global Sales Units as well as Senior Vice President and Deputy General Manager of Broad-Based Solution Business Unit. He also served as Senior Vice President and Head of SoC Business in the IoT and Infrastructure Business. Renesas appreciates Nitta’s work over the past 40 years helping the company advance its product leadership and wish him and his family all the best for the future.
As a result of the organizational changes, Roger Wendelken, who has been serving as Senior Vice President and Head of Embedded Microcontroller in the Embedded Processing, Digital Power and Signal Chain Solutions Group will leave Renesas. Roger joined Renesas in 2017 following the Intersil acquisition. He contributed to Renesas as leader of worldwide sales for the broad-based solution business. In his current position, Roger played an instrumental role in releasing the ARM-based RA microcontrollers. The company is grateful to Roger for his significant achievements at Renesas.
Andrew Cowell will retire from his role of Senior Vice President and Head of Performance Power. Since joining Renesas in 2017 from Intersil, Andrew guided the foundation in strengthening the growth and market share gains of the digital multiphase controllers and smart power stages for the infra core power businesses. Renesas thanks Andrew for his remarkable contribution and wishes him all the best for his retirement.
Hiroto Nitta, Roger Wendelken and Andrew Cowell will assist with the transition and leave Renesas by the end of the year.
Brief Biography of the Newly Appointed Leadership Team Members
Davin Lee
Mr. Lee serves as the Vice President and General Manager of the Advanced Analog Division at Renesas Electronics Corporation. He joined Renesas in August 2021 through the acquisition of Dialog Semiconductor PLC where he was the Senior Vice President of the Advanced Mixed-Signal Business.
Prior to Dialog Semiconductor, Mr. Lee held executive-level management positions at numerous semiconductor companies including Scintera Networks (CEO), Intersil (VP/GM of Power Management), Xicor (VP of Marketing), Altera and National Semiconductor.
Davin Lee holds a BSEE degree from the University of Texas at Austin and an MBA degree from Kellogg School of Management at Northwestern University.
Toshihiko Seki
Mr. Seki serves as the Vice President of MCU Device Solution Business Division at Renesas Electronics Corporation since January 2022. In this role, he is mainly responsible for leading the company’s proprietary RL78 microcontroller (MCU) business and has been instrumental in achieving global leading market share position for the 16-bit MCU architecture category.
Mr. Seki has more than 30 years of experience in the semiconductors industry. He started his career in ASIC/memory product marketing at Hitachi, Ltd., and held various marketing management positions at Renesas, including Director of Marketing & Business operations at Renesas Electronics America.
Mr. Seki holds a bachelor’s degree in Liberal Arts from Sophia University, Japan.
Bobby Matinpour
Mr. Matinpour serves as the Vice President of Global Strategic Vertical & Regional Sales at Renesas Electronics Corporation since April 2022. Previously at Renesas, he was the Vice President of Timing and Standard Product Business Division since March 2019.
Prior to joining Renesas, he served as the Vice President of High Speed Data & Clock Business Unit at Texas Instruments. A 20-year veteran of semiconductor industry, Mr. Matinpour has a diverse and wholistic industry experience covering engineering, product marketing, operations, and sales management for a wide-range of products and solutions addressing industrial, infrastructure, consumer, and automotive markets.
Prior to joining Texas Instruments, Mr. Matinpour held various engineering and marketing management positions at National Semiconductor, Epson-Toyocom, and several semiconductor startups.
Mr. Matinpour holds a BSEE from Virginia Tech and MS and PhD EE from Georgia Institute of Technology.
Buvna Ayyagari
Ms. Ayyagari joined Renesas in August 2023 as Vice President of Software and Digitalization. In this newly created role, Ms. Ayyagari is responsible for spearheading the definition, development, and implementation of a market leading platform with industry standard customer tools.
Ms. Ayyagari brings rich and multi-disciplinary expertise across the semiconductor industry from Applied Materials (AMAT), Synopsys (IP and EDA) and Intel where she held executive and leadership positions in R&D, Product Engineering, Field Applications Engineering, Marketing, Pre- and Post-sales Customer Support and drove products from definition to high volume.
Ms. Ayyagari holds a master’s degree in computer engineering from the University of South Carolina. She is the author of several publications and patents and serves on the Board of non-profit organizations.
Original – Renesas Electronics
- Analog & Connectivity
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ROHM has developed dual MOSFETs that integrate two 100V chips in a single package – ideal for fan motor drive applied in communication base stations and industrial equipment. New five-models have been added as part of the HP8KEx/HT8KEx (Nch+Nch) and HP8MEx (Nch+Pch) series.
Recent years have seen a transition to higher voltages from conventional 12V/24V to 48V systems in communication base stations and industrial equipment, – intending to achieve higher efficiency by reducing current values. In these situations, switching MOSFETs are required a withstand voltage of 100V to account for voltage fluctuations, as 48V power supplies are also used in the fan motors for cooling these applications.
However, increasing the breakdown voltage raises ON resistance (RDS(on)) (which is in a trade-off relationship), leading to decreased efficiency, making it difficult to achieve both lower RDS(on) and higher breakdown voltage. Moreover, unlike multiple individual drive MOSFETs normally applied in fan motors - dual MOSFETs that integrate two chips in one package are increasingly being adopted to save space.
In response, ROHM developed two new series – the HP8KEx/HT8KEx (Nch+Nch) and the HP8MEx (Nch+Pch) – that combine Nch and Pch MOSFET chips using the latest processes. Both series achieve the industry’s lowest RDS(on) by adopting new backside heat dissipation packages with excellent heat dissipation characteristics. As a result, RDS(on) is reduced by up to 56% compared with standard dual MOSFETs (19.6mΩ for the HSOP8 and 57.0mΩ for the HSMT8 Nch+Nch), contributing to significantly lower set power consumption.
At the same time, combining two chips in a single package provides greater space savings by reducing area considerably. For example, replacing two single-chip TO-252 MOSFETs with one HSOP8 decreases footprint by 77%.
Next, ROHM will continue to expand its dual MOSFET lineup to withstand voltages ideal for industrial equipment while also developing low-noise variants. This is expected to contribute to solving social issues such as environmental protection by saving space and reducing power consumption in various applications.
Application Examples
– Fan motors for communication base stations
– Fan motors for factory automation, and other industrial equipment
– Fan motors for data center servers, etc.Original – ROHM
