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The Volkswagen Group is reorganizing its procurement of electronic parts and semiconductors to ensure supply over the long term and, in doing so, securing itself a leading position in terms of technology as well as competitiveness. To this end, the Group has developed a new strategy for the procurement of parts with electronic components.
“A high degree of transparency in the semiconductor value chain – the exact knowledge of the parts used – enables us to better determine the global demand and availability of these components. This is underscored by risk management which, in future, will extend to the level of individual electronic parts and help us detect bottlenecks early on and avoid them.
For strategically important semiconductors and even the Group’s own planned developments in the future, we will rely on direct purchasing from the semiconductor manufacturers,” said Dirk Große-Loheide, Board Member for Procurement of Volkswagen Passenger Cars and member of Group management.
In the past, electronic components like control units were procured and the Tier 1 suppliers were largely free to decide which parts they used. Going forward, in close collaboration and partnership with Tier 1 suppliers, Group procurement will define which semiconductors and other electronic parts are to be used.
“Additionally, this is done across all brands by the Semiconductor Sourcing Committee (SSC) established especially for this purpose, with representatives from the procurement and development departments of the brands as well as from Volkswagen Group Components and CARIAD. Furthermore, the transparency regarding semiconductors means that technical alternatives can be identified and implemented more quickly in the event of bottlenecks.
Another positive effect is that a reduction in the diversity of variants in the hardware results in a lower degree of software complexity,” said Karsten Schnake, Board Member for Procurement at Škoda Auto and head of the cross-brand and cross-functional task force COMPASS (Cross Operational Management Parts & Supply Security), explaining the advantages.
Semiconductors are indispensable in the automotive industry: not only are they elementary for mass production, but they are also innovation drivers and key for launching new products on the market.
The greatest increase in demand for semiconductors is the result of the increasing electrification of vehicles and the trend towards the growing use of assistant functions through to fully autonomous driving. The corresponding innovations will also result in the use of cutting-edge semiconductors, while the demand for more common semiconductors will remain or even rise further. Vehicle innovations are heavily characterised by the use of semiconductors: in 1978, only eight semiconductors were installed in a control unit of a Porsche 911. Today, a Škoda Enyaq has around 90 control units with some 8,000 electronic components.
This development also has an impact on the value of electronic components in the vehicle, the value of which will more than double by the year 2030 from today’s average of around 600 euros per vehicle. According to the Group’s assessment and corresponding analyzes, the importance of the automotive sector as a customer of the semiconductor industry is also increasing.
Today, the automotive industry is in 5th place among the major buyers with a global procurement volume for semiconductors of around 47 billion US dollars. By 2030, our industry is expected to secure third place with a market volume of around 147 billion US dollars.
The after-effects of the COVID-19 pandemic and the associated chip crisis can still be felt. To solve these enormous challenges and ensure the semiconductor supply, the Volkswagen Group launched the COMPASS initiative at the beginning of 2022, initially with the operational focus of safeguarding the vehicle programme. Strategic action areas were identified on the basis of lessons learned during the semiconductor crisis and solutions were developed and implemented for the long term.
Original – Volkswagen
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Navitas Semiconductor will reveal a new, high-performance wide bandgap power platform as part of its display at one of Asia’s most prestigious electronics exhibitions – sponsored by Navitas – SEMICON Taiwan 2023, from September 6th-8th.
Visitors will discover the latest gallium nitride (GaN) GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions.
Additionally, Navitas will showcase cutting-edge, power-system platforms to dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples include:
- Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1 bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
As part of SEMICON’s Power and Opto Semiconductor Forum, Navitas’ Charles Bailley, Senior Director of Business Development, will present “GaN Power ICs Increase Power Density in EV Power Systems”. The presentation is at 2pm, on September 6th, in room 402, 4F, TaiNEX 1.
“Breakthrough high efficiency, high reliability, and high power density – all from the new GaN power IC platform,” said Kevin 汪時民 Wang, Manager of Navitas Taiwan. “The new platform announcement matches SEMICON’s theme of ‘Innovating the World through Semiconductors’ and our own mission to ‘Electrify Our World™’.”
Original – Navitas Semiconductor
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Toshiba Electronic Devices & Storage Corporation has launched three 80 V N-channel power MOSFET products that use its latest generation process “U-MOSX-H series” and are suitable for switching power supplies for industrial equipment—used for such as data centers and communication base stations—and expanded the lineup.
The new products use the surface mount type SOP Advance(N) package, and their drain-source On-resistance (max) is 3 ｍΩ for “TPH3R008QM”, 6 mΩ for “TPH6R008QM”, and 8.8 mΩ for “TPH8R808QM”.
The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics.) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.
Toshiba is expanding its lineup of products to help cut equipment power consumption.
Applications
- Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (motor drives, etc.)
Features
- Latest generation process U-MOSX-H series
- Low On-resistance:
TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V) - High channel temperature: Tch (max)=175 °C
Original – Toshiba
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Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology to address the escalating need for environmentally conscious and highly efficient power solutions.
Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.
In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance.
For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.
In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications.
Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.
Original – Infineon Technologies
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MACOM Technology Solutions Holdings, Inc. announced that it has entered into a definitive agreement to acquire the radio frequency business of Wolfspeed, Inc. The RF Business includes a portfolio of Gallium Nitride (“GaN”) on Silicon Carbide (“SiC”) products used in high performance RF and microwave applications.
The business services a broad customer base of leading aerospace, defense, industrial and telecommunications customers and most recently generated annualized revenues of approximately $150 million. The acquisition is expected to be immediately accretive to MACOM’s non-GAAP earnings.
“We are excited to acquire Wolfspeed’s RF Business and look forward to welcoming its employees to MACOM,” stated Stephen G. Daly, President and Chief Executive Officer, MACOM. “The RF team’s engineering capabilities, technology and products are a perfect fit with MACOM and our strategy.”
The acquisition includes a 100mm GaN wafer fabrication facility in Research Triangle Park, North Carolina (the “RTP Fab”) with operations conveying to MACOM approximately two years following the closing and Wolfspeed’s relocation of certain production equipment.
The acquisition also includes design teams and associated product development assets in Arizona, California and North Carolina, as well as back-end production capabilities in California and Malaysia. In addition, MACOM will be assigned or licensed a robust intellectual property portfolio including over 1,400 patents associated with the RF Business.
The RF Business will be acquired for $125 million, including $75 million cash paid at closing and $50 million of MACOM common stock issued with certain restrictions. A workforce of approximately 280 employees is expected to join MACOM at closing, with additional employees joining when the RTP Fab conveys.
Closing of the transaction is subject to the expiration of a waiting period under the Hart-Scott-Rodino Antitrust Improvements Act of 1976 and other closing conditions and is expected to occur in the second half of calendar year 2023.
Original – MACOM Technology Solutions
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The rapid growth of technology over the past century brought us as many advantages as many disadvantages including the accelerating global warming with its dramatic consequences we face every day in various parts of the Earth. So far no one found a solution how to stop this process, but there are many solutions how to slow it down.
Today we try to respond to this challenge with carbon neutrality initiatives launched in many countries across the globe. And one of the major steps in this green society program is the electrification of passenger and commercial vehicles.
Right now, companies have various approaches to vehicle electrification including mild-hybrid electric vehicles MHEV, full hybrid electric vehicles HEV, plug-in hybrid electric vehicles PHEV, battery electric vehicles BEV, and fuel-cell electric vehicle FCEV. What some time ago seemed like a big step forward is a reality we live in now.
And to make this dream come true became possible with the help of power semiconductors. For a long time, semiconductors were used in the automotive industry, and the evolution of power semiconductor materials pushed the transition to the electrification of vehicles. Electric vehicles’ performance and cost depend on the technical level of the motor control system.
Previously, silicon (Si) IGBT modules served as the heart of electronic control systems with their relatively high switching speed and low conduction loss. But with the growth of silicon carbide (SiC) technology, EVs step into the new era of electrification.
Silicon-based semiconductors have been dominating the market for many decades. No wonder, several generations of power electronics engineers were passing their knowledge and experience working with silicon semiconductors. Through time they have short-listed their preferred solutions produced by several companies.
Based on the current requirements for the improvement of battery life and dynamic performance of electric passenger and commercial vehicles, higher efficiency, and fewer parts and materials are required to further improve the power density of inverters and electric drive assemblies. All this becomes possible with the transition from Si to SiC power devices. But when it comes to the all-new silicon carbide semiconductors and the rapidly growing EV industry, many face difficulties to make the right choice of the silicon carbide devices available in the market.
Recently I launched a poll to understand what is most important for EV companies when choosing a supplier of SiC power devices. Power electronics engineers from the semiconductor and automotive industries shared their experience and unanimously confirmed that the performance of the power devices plays a crucial role when choosing a supplier. The poll results are:
- Performance/characteristics – 66%
- Price – 16%
- Lead time – 9%
- Brand – 9%
Based on the results it is clear that for the EV market today characteristics of SiC power devices and price play the most important role. After all, consumers want high performance and reliability at affordable prices.
Nowadays SiC is still more expensive than Si. However, the prices have dropped a lot in the past decade, and the growing number of SiC fabs promises to drop the price in the future. Fingers crossed, in the nearest future, the dream of the consumers for the high-performance, reliable, and affordable EV will come true.
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Toshiba Electronic Devices & Storage Corporation has developed 2200 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) for photovoltaic (PV) inverters. A two-level inverter with the new devices realized higher frequency operation and lower power loss than a conventional three-level silicon (Si) insulated gate bipolar transistor (IGBT) inverter. The new MOSFETs also contribute to simplification of inverter systems and reductions in their size and weight.
Three-level inverters enjoy the advantage of low switching losses because the voltage applied to switching devices in the inverters during off-state is half the line voltage. Against this, two-level inverters have fewer switching modules than three-level inverters, realizing a simpler, smaller, and lighter system. However, they require semiconductors with higher breakdown voltage, as the applied voltage is equal to the line voltage. Also, demand for semiconductors with both low loss and high breakdown voltage is growing as 1500 V DC line voltage systems are introduced in photovoltaic and other renewable energy markets.
Toshiba Electronic Devices & Storage Corporation has developed 2200 V Schottky barrier diode (SBD)-embedded SiC MOSFETs for two-level inverters in 1500 V DC voltage systems. The impurity concentration and thickness of the drift layer has been optimized to maintain the same relationship between the on-resistance and the breakdown voltage as our existing products, and also to achieve high resistance to cosmic rays, a requirement for PV systems. It has also been confirmed that embedding SBDs clamped parasitic PN junctions between the p-base regions and the n-drift layer secure high reliability in reverse conduction.
Switching energy loss for the developed all-SiC module is far lower than for the Si module (Si IGBTs + Si fast recovery diodes) with the same 2000 V rated voltage class. Estimates of inverter power dissipation found that the developed SiC module achieves higher frequency operation twice that of a conventional Si IGBT, as well as a 37% lower loss for the two-level SiC inverter against the three-level Si inverter. The higher frequency operation enables downsizing and weight reduction of other system components, such as heat sinks and filters.
Original – Toshiba
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The University of Arkansas has taken the next step to becoming a national leader in the United States’ semiconductor economy. Semiconductors, such as silicon, are essential materials in most electronic devices and advance performance in fields such as healthcare, national defense, computing and transportation.
This August, the university began construction on the national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC. Capable of silicon or silicon carbide chip fabrication, this new semiconductor research and fabrication facility will enable the government, businesses of all sizes, and universities to prototype in silicon carbide, introducing a capability that does not presently exist in the U.S.
This unique facility will offer low-volume prototyping for high-volume manufacturing, bridging the gap between traditional university research and the needs of private industry. This will accelerate both workforce development and technological advancement in semiconductors by providing a single location where chips can be go from developmental research to prototyping, testing and fabrication.
Alan Mantooth, Distinguished Professor of electrical engineering at the U of A, is principal investigator for MUSiC. He stated that with MUSiC, the university could “begin training the next generation at a variety of degree levels to provide well-trained and educated talent for onshoring semiconductor manufacturing that domestic suppliers offshored in the late 90s and early 2000s. Our training will be equally applicable to silicon and silicon carbide and other materials.”
Construction coincides with the CHIPS America Summit on Aug. 17, an invitation-only event for research, industry and governmental leaders from across the nation to discuss CHIPS and Science Act semiconductor-related opportunities and the ways in which the U of A and the State of Arkansas are uniquely positioned to lead.
The summit will feature Director of External and Government Affairs for the U.S Department of Commerce’s CHIPS Program Office, Adrienne Elrod. U.S. Representative Steve Womack and Arkansas Secretary of Commerce Hugh McDonald will also participate.
In addition to the MUSiC facility, the U of A is also home to the first Energy Frontier Research Center in Arkansas, as part of a team of researchers who received $10.35 million from the U.S. Department of Energy. The Center for Manipulation of Atomic Ordering for Manufacturing Semiconductors is dedicated to investigating the formation of atomic orders in semiconductor alloys and their effects on various physical properties. This research program will enable reliable, cost-effective and transformative manufacturing of semiconductors.
Researchers at the U of A previously established the MonArk NSF Quantum Foundry to accelerate the development of quantum materials and devices. In collaboration with Montana State University, and other member universities, the foundry supports the study of 2-D materials — consisting of a single layer of bonded atoms — by aiding researchers and facilitating the exchange of ideas across academia and industry. The project leads the fabrication of 2-D material quantum devices and their characterization, using low-temperature electronic transport and optoelectronic techniques.
The U of A’s existing and expanding research foundation means it’s uniquely positioned to take advantage of the recent CHIPS (Creating Helpful Incentives to Produce Semiconductors) and Science Act, which is providing approximately $280 billion in funding to stimulate domestic research and manufacturing of semiconductors.
As a result of manufacturing and production shortages of essential computer chips during the pandemic, which are overwhelmingly manufactured overseas, the federal government has prioritized the onshoring of this critical technology.
About the University of Arkansas: As Arkansas’ flagship institution, the U of A provides an internationally competitive education in more than 200 academic programs. Founded in 1871, the U of A contributes more than $2.2 billion to Arkansas’ economy through the teaching of new knowledge and skills, entrepreneurship and job development, discovery through research and creative activity while also providing training for professional disciplines.
The Carnegie Foundation classifies the U of A among the few U.S. colleges and universities with the highest level of research activity. U.S. News & World Report ranks the U of A among the top public universities in the nation. See how the U of A works to build a better world at Arkansas Research and Economic Development News.
The national Multi-User Silicon Carbide Research and Fabrication Facility, or MUSiC, will provide opportunities for the government and business of all sizes, and universities to prototype in silicon carbide, introducting a capability that does not currently exist in the U.S.
Original – University of Arkansas
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TSMC, Robert Bosch GmbH, Infineon Technologies AG, and NXP Semiconductors N.V. announced a plan to jointly invest in European Semiconductor Manufacturing Company (ESMC) GmbH, in Dresden, Germany to provide advanced semiconductor manufacturing services. ESMC marks a significant step towards construction of a 300 mm fab to support the future capacity needs of the fast-growing automotive and industrial sectors, with the final investment decision pending confirmation of the level of public funding for this project. The project is planned under the framework of the European Chips Act.
The planned fab is expected to have a monthly production capacity of 40,000 300 mm (12-inch) wafers on TSMC’s 28/22 nanometer planar CMOS and 16/12 nanometer FinFET process technology, further strengthening Europe’s semiconductor manufacturing ecosystem with advanced FinFET transistor technology and creating about 2,000 direct high-tech professional jobs. ESMC aims to begin construction of the fab in the second half of 2024 with production targeted to begin by the end of 2027.
The planned joint venture will be 70 percent owned by TSMC, with Bosch, Infineon, and NXP each holding 10 percent equity stake, subject to regulatory approvals and other conditions. Total investments are expected to exceed 10 billion euros consisting of equity injection, debt borrowing, and strong support from the European Union and German government. The fab will be operated by TSMC.
“This investment in Dresden demonstrates TSMC’s commitment to serving our customers’ strategic capacity and technology needs, and we are excited at this opportunity to deepen our long-standing partnership with Bosch, Infineon, and NXP,” said Dr. CC Wei, Chief Executive Officer of TSMC. “Europe is a highly promising place for semiconductor innovation, particularly in the automotive and industrial fields, and we look forward to bringing those innovations to life on our advanced silicon technology with the talent in Europe.”
Dr. Stefan Hartung, chairman of the Bosch board of management: “Semiconductors are not only a crucial success factor for Bosch. Their reliable availability is also of great importance for the success of the global automotive industry. Apart from continuously expanding our own manufacturing facilities, we further secure our supply chains as an automotive supplier through close cooperation with our partners. With TSMC, we are pleased to gain a global innovation leader to strengthen the semiconductor ecosystem in the direct vicinity of our semiconductor plant in Dresden.”
“Semiconductors are not only a crucial success factor for Bosch. Their reliable availability is also of great importance for the success of the global automotive industry. Apart from continuously expanding our own manufacturing facilities, we further secure our supply chains as an automotive supplier through close cooperation with our partners. With TSMC, we are pleased to gain a global innovation leader to strengthen the semiconductor ecosystem in the direct vicinity of our semiconductor plant in Dresden.”said Dr. Stefan Hartung, chairman of the Bosch board of management
“Our joint investment is an important milestone to bolster the European semiconductor ecosystem. With this, Dresden is strengthening its position as one of the world’s most important semiconductor hubs that is already home to Infineon’s largest frontend site,” said Jochen Hanebeck, CEO of Infineon Technologies. “Infineon will use the new capacity to serve the growing demand particularly of its European customers, especially in automotive and IoT. The advanced capabilities will provide a basis for developing innovative technologies, products and solutions to address the global challenges of decarbonization and digitalisation.”
“NXP is very committed to strengthening innovation and supply chain resilience in Europe,” said Kurt Sievers, President and CEO of NXP Semiconductors. “We thank the European Union, Germany, and the Free State of Saxony for their recognition of the semiconductor industry’s critical role and for their true commitment to boost Europe’s chip ecosystem. The construction of this new and significant semiconductor foundry will add much needed innovation and capacity for the range of silicon required to supply the sharply increasing digitalization and electrification of the automotive and industrial sectors.”
Original – Bosch
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Fuji Electric Co., Ltd. announced the launch of the P633C Series 3rd-generation small IPMs, which help reduce the power consumption of the equipment on which it is mounted, such as home appliances and machine tools.
IPMs (intelligent power modules) are power semiconductors equipped with a built-in IGBT drive circuit and protection function. They are used for applications including inverters and servo systems. Inverters and servo systems control machine operation by controlling voltage and frequency through power semiconductor switching (turning electricity on and off), but power semiconductors generate power loss and electromagnetic noise during switching.
This product can reduce both the power loss and the electromagnetic noise generated during switching. Using this product in inverters for home appliances or servo systems for machine tools can reduce the power consumption of the equipment on which it is mounted, thereby contributing to the achievement of a decarbonized society.
One way to reduce the power loss that occurs during switching is to speed up the switching operation. Faster switching increases electromagnetic noise, which can cause peripheral devices to malfunction. This product uses the latest 7th-generation IGBT/FWD chips, achieving a 10% reduction of power loss and a reduction of electromagnetic noise to approximately 1/3 compared with conventional products. The trade-off characteristics between power loss and noise are among the best in the industry.
Original – Fuji Electric
