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Nexperia announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in electric vehicles and other automobiles.
Additionally, in a further extension to its portfolio of SiC diodes, Nexperia is now also offering industrial-grade devices with current ratings of 6 A, 16 A, and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging to facilitate greater design flexibility. These diodes address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, motor drives, uninterruptible power supplies as well as photovoltaic inverters for sustainable energy production.
The merged PiN Schottky (MPS) structure of these devices provides additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, thereby significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications. Nexperia’s consistent quality across various semiconductor technologies provides designers with confidence in the reliability of these diodes.
In addition, Nexperia’s ‘thin SiC’ technology delivers a thinner substrate (one-third of its original thickness) which dramatically reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.
“We’ve seen an excellent market response to the initial release of our SiC diodes. They have proven themselves in design-ins with one notable example in power supplies for industrial applications, where customers have achieved especially good results. The superior reverse recovery of these diodes translates to high efficiency in real-world use”, says Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia. “We are particularly excited that this is our first automotive-qualified product, and it is already recognized by major automotive players for its performance and reliability.”
Original – Nexperia
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Qorvo® announced the industry’s first 4 milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a TOLL package. It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size and reliability are paramount.
With RDS(on) of just 4 milliohm, the UJ4N075004L8S offers the industry’s lowest on-resistance among the 650V to 750V class of power devices in standard discrete packages. This low RDS(on) drives significant reductions in heat generation and, when coupled with a compact TOLL package, enables a solution size that is 40% smaller than competing devices in TO-263 packages.
This small solution size supports the space-limited dimensions of today’s electromechanical circuit breakers and operates without the need for elaborate cooling systems, accelerating the transition from electromechanical circuit breakers to semiconductor-based solid-state circuit breakers (SSCBs).
“With the introduction of the UJ4N075004L8S, Qorvo continues to lead the way in SiC power innovation, catalyzing the emergence of applications such as circuit protection with ultra-low RDS(on) FET offerings in very small footprints,” said Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business. “The SSCB market is growing rapidly, and Qorvo’s newest product marks a significant milestone in the evolution of the technology.”
Qorvo’s JFETs are highly robust devices well suited to meet the challenges of circuit protection, providing the ability to turn off at very high inrush currents during circuit faults. Qorvo’s newest JFET can also withstand high instantaneous junction temperatures without experiencing degradation or parametric drift. The normally-on nature of the JFET lends itself to seamless integration into systems where the switch is in the on-state by default and in turn-off state under fault conditions.
The UJ4N075004L8S is now available for sampling and will enter full production in Q4 2024, accompanied by additional JFET options, including 750V with 5 milliohm and 1200V with 8 milliohm ratings, all in TO-247 packaging. For more details about this transformative power technology and detailed product specifications, please visit UJ4N075004L8S.
Original – Qorvo
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Semikron Danfoss and SMA announced that the Sunny Boy Smart Energy incorporates the SEMITOP E power modules based on silicon carbide. The SEMITOP E features a low-inductance design with superior thermal performance, all in an industry standard housing. The SEMITOP E product offers a variety of circuit topologies based on the latest 650V-1200V silicon carbide technology from multiple sources.
“We strongly believe that the SEMITOP E is the power semiconductor package of choice for applying silicon carbide in advanced solar inverters,” says Roberto Agostini, Product Manager Semikron Danfoss.
“The SEMITOP E has been essential in increasing throughput and efficiency in our assembly,” says SMA Product Manager Petra Nawratil. “The press-fit design and simple mounting approach enabled a higher automation level in the assembly line for the Sunny Boy Smart Energy and following products.”
Residential solar inverters are tasked with generating solar power with the highest efficiency, enabled through silicon carbide technology.
The Sunny Boy Smart Energy is part of the new SMA Home Storage Solution, which enables fast and effective solar generation and storage. It is scalable to meet changing needs and adaptable to additional use cases such as an EV charger, a heat pump, dynamic tariffs, or peak load shaving. The modular SMA Home Storage battery can be expanded anytime to store more solar power.
Original – Semikron Danfoss
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Texas Instruments introduced the industry’s first 650V three-phase GaN IPM for 250W motor drive applications. The new GaN IPM addresses many of the design and performance compromises engineers typically face when designing major home appliances and heating, ventilation and air-conditioning (HVAC) systems.
The DRV7308 GaN IPM enables more than 99% inverter efficiency, optimized acoustic performance, reduced solution size and lower system costs. It is on display at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Conference, held June 11-13 in Nuremberg, Germany.
“Designers of high-voltage home appliances and HVAC systems are striving to meet higher energy-efficiency standards to support environmental sustainability goals around the world,” said Nicole Navinsky, Motor Drives business unit manager at TI. “They are also addressing consumer demand for systems that are reliable, quiet and compact. With TI’s new GaN IPM, engineers can design motor driver systems that deliver all of these expectations and operates at peak efficiency.”
Improve system efficiency and reliability with TI GaN
Worldwide efficiency standards for appliances and HVAC systems such as SEER, MEPS, Energy Star and Top Runner are becoming increasingly stringent. The DRV7308 helps engineers meet these standards, leveraging GaN technology to deliver more than 99% efficiency and improve thermal performance, with 50% reduced power losses compared to existing solutions.
In addition, the DRV7308 achieves industry-low dead time and low propagation delay, both less than 200ns, enabling higher pulse-width modulation (PWM) switching frequencies that reduce audible noise and system vibration. These advantages plus the higher power efficiency and integrated features of the DRV7308 also reduce motor heating, which can improve reliability and extend the lifetime of the system.
To learn more about the benefits of GaN technology, read the white paper, “How three-phase integrated GaN technology maximizes motor-drive performance.”
Advanced integration and high power density reduce solution size and costs
Supporting the trend of more compact home appliances, the DRV7308 helps engineers develop smaller motor drive systems. Enabled by GaN technology, the new IPM delivers high power density in a 12mm-by-12mm package, making it the industry’s smallest IPM for 150W to 250W motor-drive applications.
Because of its high efficiency, the DRV7308 eliminates the need for an external heatsink, resulting in motor drive inverter printed circuit board (PCB) size reduction of up to 55% compared to competing IPM solutions. The integration of a current sense amplifier, protection features and inverter stage further reduces solution size and cost.
To learn about designing more efficient, compact motor systems, see the GaN IPM page on TI.com.
This high-efficiency, high-voltage GaN IPM is the latest example of TI innovations to help solve engineering challenges and transform motor designs.
TI’s reliable high-voltage technology at PCIM 2024
Visitors to PCIM can see new products and solutions from TI that are enabling the transition to a more sustainable future with reliable high-voltage technology in Hall 7, Booth 652. In addition to the DRV7308 GaN IPM, TI highlights at PCIM include:
- Next-generation electric vehicle (EV) propulsion system: TI is demonstrating a new 800V, 750kW SiC-based scalable traction inverter system for EV six-phase motors, in collaboration with EMPEL Systems. The demonstration features high power density and efficiency using TI’s high-performance isolated gate drivers, isolated DC/DC power modules and Arm® Cortex®-R MCUs.
- TI’s manager of high-voltage power systems applications, Sheng-Yang Yu, will speak on June 11 in the Markt & Technik panel discussion: “Will SiC ultimately Hold its Own against GaN?”
- TI’s manager of renewable energy systems, Harald Parzhuber, will speak on June 12 in Bodo’s Power Systems panel discussion: “GaN Wide Bandgap Design, the Future of Power.”
Original – Texas Instruments
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hofer powertrain announced the commencement of a groundbreaking research project in collaboration with the Swiss Federal Institute of Technology in Zurich (ETH Zurich), focusing on the development of a state-of-the-art multilevel Gallium Nitride (GaN) traction inverter. Supported by a prestigious funding from INNOSUISSE, the Swiss Agency of Innovation Promotion, which advances science-based innovations in the interest of the economy and society in Switzerland. The next steps in this project will enable the pursuit of cutting-edge advancements in power electronics even further.
The core objective of the project is to rapidly develop an advanced multilevel traction inverter integrating Gallium Nitride (GaN) switches. hofer powertrain has made significant strides in developing advanced multilevel power electronics utilizing Gallium Nitride (GaN) chip technology over the last four years, resulting in enhanced efficiency and power density compared to silicon-based systems.
Their latest 800V GaN inverters have showcased remarkable performance in tests. The collaborative project with ETH Zurich builds on that experience to realize a revolutionary inverter solution, which aims to leverage a novel modulation scheme, operate at very high switching frequencies, and incorporate a wide array of additional pioneering features that the company has been working on in recent years.
ETH has appointed a highly qualified PhD candidate to lead the research efforts, ensuring the project benefits from fresh, innovative thinking and rigorous academic oversight. The project will be supervised by Professor Johann Biela from ETH Zurich, a renowned expert in power electronics, and Lukasz Roslaniec, the division lead of power electronics at hofer powertrain, who brings extensive industry experience to the table and has been working on these technologies proactively.
The funding from Innosuisse underscores the project’s significance and potential impact in the country and the DACH-region. This financial support will facilitate the design of a new, optimized, and highly efficient three-level GaN power inverter, featuring adaptive gate drivers to improve switching controllability and further reduce energy losses. The outcome will significantly enhance the performance and efficiency of powertrain systems for modern electrified vehicles, making a substantial contribution to the future of mobility.
Dr. Lukasz Roslaniec highlights the driving force behind this project, stating, “We eagerly anticipate the fruitful collaboration with ETH, renowned for its groundbreaking work in Power Electronics and Electric Drives. We are confident that our partnership will yield solutions that are not only technologically advanced and unparalleled but also financially accessible, thereby pushing the adoption of electric vehicles and environmental sustainability in the region and beyond.”
Original – hofer powertrain
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Mitsubishi Electric Corporation has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10.
Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment. The new modules will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on March 29, feature an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.
Original – Mitsubishi Electric
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Vishay Intertechnology, Inc. announced that at PCIM Europe 2024 the company will be showcasing its broad portfolio of power management solutions that address several increasingly important trends in power electronics, including e-mobility, high efficiency power conversion, energy storage, and grid management. In Hall 9, Booth 208, Vishay experts will be available to discuss the company’s extensive offering of passive and semiconductor solutions for these next-generation applications.
Taking center stage for Vishay at PCIM will be the company’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 55 mW, 95 mW, and 280 mΩ in standard packages for industrial applications, with custom products also available.
In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 1 Ω. Vishay’s SiC platform is based on proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy conversion and storage, on-board charger, and charging station applications. At the booth, Vishay’s experts will also be discussing upcoming planned releases of the MaxSiC platform, including AEC-Q101 Automotive Grade products.
At PCIM, Vishay will be offering a variety of application-focused demonstrations, including:
- A high voltage intelligent battery shunt for 400 V and 800 V batteries
- A 40 kW resettable electronic fuse (eFuse) for 400 V and 800 V battery electric vehicles (BEV)
- A unidirectional, 11 kW three-phase AC on-board charger (OBC) with a BOM consisting of 90 % Vishay parts
- A bidirectional 10 kW eFuse for 48 V applicationsA collaborative robot workstation featuring Vishay power resistors, ESTA power electronic capacitors (PEC), Automotive Grade diodes, SiC MOSFETs, and an SiC-based auxiliary power converter.
Vishay passive components on display at PCIM will include IHPT series solenoid-based haptic actuators featuring Immersion Corporation licenses, a 5.5 kW transformer / inductor for LLC applications, and IHLE® series low profile, high current inductors with integrated e-field shields; wirewound resistors and charging resistors featuring hybrid wirewound technology; thick film power resistors; robust metallized polypropylene film capacitors, including AC and pulse capacitors and DC-Link capacitors with high temperature operation up to +125 °C and the ability to withstand temperature humidity bias (THB) testing of 85 °C / 85 % for 1000 h; X1, X2, and Y2 EMI suppression film capacitors certified to safety and humidity robustness grade IIIB; and DC and AC power electronic capacitors (PEC) with high impulse current ratings, low inductance, and high reliability.
Highlighted Vishay semiconductor solutions will consist of surface-mount diodes in the eSMP® and FlatPAK 5×6 packages; leadless surface-mount diodes in the DFN, CLP, and LLP series packages; and 650 V and 1200 V SiC Schottky diodes up to 20 A in eSMP® series and 40 A in power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification. In addition, Vishay will be showcasing microBUCK® and microBRICK® buck regulators, including the 60 V input SiC967 synchronous buck regulator with integrated power MOSFETs and inductors; high voltage MOSFETs in the PowerPAK 10×12 package; automotive power modules in the EMIPAK 1B, MaacPAK, FlatPAK, and HC0 packages; and industrial power modules in Gen III TO-244, IAP, SOT-227, and MTC packages.
Prior to the exhibition, on June 9, Vishay’s Sanjay Havanur — senior manager of system applications — will be presenting the seminar “Silicon Is Still Here: A Refresher on the Narrow Bandgap Power MOSFETs and Their Datasheets” at 2 p.m. in the Arvena Park Hotel. During the show, Claudio Damilano — director of product marketing and market development, power modules — will present “Evolution in Vishay Power Modules for E-Mobility: Solutions for High Voltage and Low Voltage Applications” on June 11, at 3:50 p.m. in Hall 6, Booth 220.
Original – Vishay Intertechnology
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The market for Battery Electric Vehicles (BEVs) and Plug-in Hybrid Electric Vehicles (PHEVs) continues to grow as the push towards decarbonization requires sustainable solutions to reduce emissions. A critical application for EVs is the on-board charger, which converts AC power into DC power to recharge the vehicle’s high-voltage battery.
Microchip Technology announced an On-Board Charger (OBC) solution that uses a selection of its automotive-qualified digital, analog, connectivity and power devices, including the dsPIC33C Digital Signal Controller (DSC), the MCP14C1 isolated SiC gate driver and mSiC™ MOSFETs in an industry-standard D2PAK-7L XL package.
This solution is designed to increase an OBC system’s efficiency and reliability by leveraging the dsPIC33 DSC’s advanced control functions, the MCP14C1 gate driver’s high-voltage reinforced isolation with robust noise immunity and the mSiC MOSFETs’ reduced switching losses and improved thermal management capabilities. To further simplify the supply chain for customers, Microchip provides the key technologies that support the other functions of an OBC, including communication interfaces, security, sensors, memory and timing.
To accelerate system development and testing, Microchip offers a flexible programmable solution with ready-to-use software modules for Power Factor Correction (PFC), DC-DC conversion, communication and diagnostic algorithms. The software modules in the dsPIC33 DSC are designed to optimize performance, efficiency and reliability, while offering flexibility for customization and adaptation to specific OEM requirements.
“Microchip established an E-Mobility megatrend team with dedicated resources to support this growing market, so in addition to providing the control, gate drive and power stage for an OBC, we can also provide customers with connectivity, timing, sensors, memory and security solutions,” said Joe Thomsen, corporate vice president of Microchip’s digital signal controller business unit. “As a leading supplier to OEMs and Tier-1s, Microchip offers comprehensive solutions to streamline the development process, including automotive-qualified products, reference designs, software and global technical support.”
Here is an overview of the key components in this OBC solution:
- The dsPIC33C DSC is AEC-Q100 qualified and features a high-performance DSP core, high-resolution Pulse-Width Modulation (PWM) modules and high-speed Analog-to-Digital Converters (ADCs), making it optimal for power conversion applications. It is functional safety ready and supports the AUTOSAR® ecosystem.
- The MCP14C1 isolated SiC gate driver is AEC-Q100 qualified and is offered in SOIC-8 wide-body package supporting reinforced isolation and SOIC-8 narrow-body supporting basic isolation. Compatible with the dsPIC33 DSC, the MCP14C1 is optimized to drive mSiC MOSFETs via Undervoltage Lockout (UVLO) for VGS = 18V gate drive split output terminals, which simplifies implementation and eliminates the need for an external diode. Galvanic isolation is achieved by leveraging capacitive isolation technology, which results in robust noise immunity and high Common-Mode Transient Immunity (CMTI).
- The mSiC MOSFET in an AEC-Q101-qualified D2PAK-7L XL surface mount package includes five parallel source sense leads to reduce switching losses, increase current capability and decrease inductance. This device supports 400V and 800V battery voltages.
Microchip has published a white paper that provides more information about how this OBC solution can optimize a design’s performance and speed up its time to market.
For more information about Microchip’s OBC solutions for EVs, visit Microchip’s website.
Original – Microchip Technology
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Wolfspeed is expanding its portfolio of industry-leading SiC MOSFET & Schottky diode discrete products with the addition of the new Top Side Cooled (TSC) package: the U2. With options ranging from 650 V – 1200 V, Wolfspeed’s TSC products significantly increase system level power density and efficiency, while improving thermal management and board layout flexibility.
Applications:
- Electric Vehicle (EV) On-Board Chargers and Fast Charging Infrastructure
- EV & Industrial HVAC (Heating, Ventilation, and Air Conditioning) Motor Drives
- High Voltage DC/DC Converters
- Solar and Energy Storage
- Industrial Motor Drives
- Industrial Power Supplies
Features:
- Low profile, surface mount footprint
- Top side cooling with low Rth
- AEC-Q101 Automotive Qualified Options
- SiC MOSFETs Available from 750 V – 1200 V
- SiC Schottky Diodes Available from 650 V – 1200 V
Benefits:
- Highest Creepage Distance Available for SiC Top Side Cooled Packages
- Higher System Power Density with Optimized PCB Layouts
- High Volume Manufacturing Capability with Surface Mount Footprint
What’s New? Advantages of New Top Side Cooled Packages
Most standard surface mount discrete power semiconductors remove heat through the bottom of the device by making direct contact with the power circuit board (PCB), which utilizes a heat sink or cooling plate attached underneath. This method is common across many different power electronics applications, particularly when size and weight requirements do not limit PCB mounting and heat sinks.
Top side cooled (TSC) devices, on the other hand, dissipate heat through the top side of the package. Inside TSC packages, the die sits upside down in the upper portion of the package to allow heat to flow directly to the top surface. Generally, TSC devices are best suited for high-performance applications such as automotive and e-mobility systems where high-power densities, advanced thermal management solutions, and small footprints are essential. Within these applications, TSC devices help address cooling requirements by enabling maximum power dissipation and optimizing thermal performance.
TSC designs also allow for dual-side usage of the PCB since the bottom board surface is no longer needed for the heatsink interface. Removing the heatsink from the thermal path not only creates an improved overall system thermal impedance; it also allows for automated assembly, which can increase manufacturing throughput for a more efficient and cost-effective solution.
Evaluating U2 TSC Devices Made Easy with SpeedVal™ Kit
Wolfspeed’s SpeedVal Kit Modular Evaluation Platform allows engineers to reduce the transition from silicon to silicon carbide (SiC) with a flexible set of building blocks for in-circuit evaluation of system performance at real operating points. The recently released 3-phase motherboard enables high-power testing with static loads as well as a foundation for advanced motor control firmware development.
Evaluation boards for a variety of Rdson ratings for Wolfspeed’s TSC MOSFET devices are coming soon.
SpeedVal™ Kit Modular Evaluation Platform Three-Phase Motherboard Putting U2 TSC Devices to Work: 13 kW Automotive HVAC Motor Drive Reference Design
Wolfspeed’s upcoming 13 kW motor drive reference design, featuring the TSC U2 package, demonstrates the benefits of U2 devices for 10 kW+ EV HVAC systems, which support thermal management of the cabin, battery, and electronics. Optimizing the efficiency and operating temperature range of the HVAC system with the implementation of SiC enables systems designers to bring fast charging to the driver in under 15 minutes, while also extending the driving range per charge for the lifetime of the car. Utilizing Wolfspeed’s new CRD-13DA12N-U2 13 kW HVAC reference design, SiC enables:
Reference Design Specifications:
- Input Voltage: 550 – 850 V
- Max Output Current: 25 A
- Max Output Power: 13 kW
- Switching Frequency: 10 – 32 kHz
- Peak Efficiency: > 98%
Original – Wolfspeed
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Navitas Semiconductor announced their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe™ Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Original – Navitas Semiconductor
