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Micro Commercial Components unveiled 1700V SiC MOSFET – SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability. SICW400N170A-BP SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component’s appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
- High blocking voltage capability (1700V)
- Ultra-low on-resistance (400mΩ) enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature (to +175°C)
- Standard TO-247AB package
Original – Micro Commercial Components
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Micro Commercial Components introduced its latest high-performance component — 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, SICW028N120A4-BP is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure this new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
Original – Micro Commercial Components
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Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus etc.
The new 100V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48V or 60V battery management systems (BMS), as well as for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such device it is ideal in application such as home batteries, portable charging station, e-scooters, e-bikes etc.
One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bidirectional switching of battery charging and discharging, further reducing on-resistance and loss significantly with respect to traditional Silicon solution. BOM count, PCB space and costs are also reduced accordingly.
The INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature an extremely low gate charge of just 90nC, ultra-low dynamic on-resistance of 3.2mΩ and small, 4x6mm package size.
Dr. Denis Marcon, General Manager, Innoscience Europe comments: “Innoscience’s continuous innovation and development of our core technology plus our 8-inch wafer GaN IDM model will accelerate the miniaturization of systems, making them more efficient and energy-saving.”
Innoscience ‘s 100V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.
Original – Innoscience Technology
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Qorvo® will showcase its latest power management innovations at the upcoming Applied Power Electronics Conference (APEC) from Feb. 26-28, at the Long Beach Convention Center in California. Attendees are invited to visit the Qorvo booth #1857 to explore the latest advancements in SPICE simulation, silicon carbide (SiC) and battery management technologies.
Qorvo will feature the following highlights at APEC 2024:
QSPICE™ Simulation Software Showcase
APEC attendees can experience the next level of simulation with Qorvo’s advanced QSPICE tool during three insightful training sessions and engage in a Q&A with the tool’s creator, Mike Engelhardt. For those unable to attend APEC, the sessions will be available on the Qorvo YouTube channel in March.Training Session Schedule:
- Tuesday, Feb. 27, 10-10:20 a.m.: The QSPICE User-Interface
- Tuesday, Feb. 27, 3-3:20 p.m.: Importing 3rd Party Models
- Wednesday, Feb. 28, 10-10:20 a.m.: Anatomy of a Macro Model Done Right
Launch of Inaugural SiC Module Family
Qorvo will unveil its first SiC module family, featuring an innovative cascode JFET architecture. This highly integrated device family simplifies high-voltage designs and offers exceptional thermal and electrical performance due to low switching losses, low thermal resistance and RDS(on) as low as 9.4mΩ.Battery Management Demonstrations
Visitors to the booth can see Qorvo’s wireless battery management debut with a demonstration showcasing a remote battery pack monitoring and state of charge solution, created in combination with Qorvo’s IoT microcontroller.Original – Qorvo
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Infineon Technologies AG announced a collaboration with Worksport. Worksport Ltd. will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density. Enabled by Infineon’s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs. In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.
“Infineon’s high-quality standard and solid supply chain provide us with the best components to ensure power-dense converters for our COR system product line and contribute to a first-class end product performance,” said Worksport CEO Steven Rossi.
The company’s COR battery system can be integrated into a pickup truck or recharged by any solar panel or wall outlet. By replacing the former silicon switch in the power converter with Infineon’s GaN power semiconductors and operating the transistors at higher switching frequency, Worksport will be able to reduce the battery system weight by 33 percent and system costs by up to 25 percent.
The working relationship with Infineon will also help Worksport to reduce CO2 in the manufacturing process. GaN is proving itself as a game-changing technology across many markets and applications. For example, in data centers, GaN solutions have a global energy savings potential of 21 TWh annually, 10 million tons of Carbon Dioxide (CO2) equivalent.
“In order to further drive electrification and decarbonization, the industry’s power designs require innovation,” said Johannes Schoiswohl, Business Line Head GaN Systems of Infineon’s Power & Sensor Systems Division. “With our GaN power semiconductors we enable Worksport to create the next generation portable power stations that users require.”
Infineon’s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. It offers very low junction-to-case thermal resistance for demanding high power applications such as on-board chargers, industrial motor drives and solar inverters. Furthermore, it features simple gate drive requirements (0 V to 6 V) and a transient tolerant gate drive (-20 / +10 V).
Original – Infineon Technologies
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Leapers Semiconductor introduced a new 62 mm package SiC module product portfolio, achieving top-tier performance in the industry. The modules adopt the widely used 62 mm module half-bridge topology design in the industrial field, using high-quality mature chips. It boasts high voltage resistance, outstanding power density, high short-circuit tolerance, and a temperature coefficient 1.4 times better than industry standards.
The 62 mm SiC modules include voltage resistance specifications of 1200V and 1700V, meeting the demands of high-power applications, especially suitable for applications in the smart grid, rail transit, energy storage, and power supplies.
Because of the use of leading-edge chip solutions in the industry and the application of low thermal resistance and low stray capacitance packaging technology, along with the use of Si3N4 AMB low thermal resistance substrate, Leapers’ 62 mm SiC product excels in power density, short-circuit current withstand capability, thermal resistance, and other capabilities. Particularly under high junction temperature conditions, the module’s conduction and switching losses significantly outperform industry standards.
Technical Features:- Voltage resistance options: 1200V or 1700V
- Outstanding current output capability
- Temperature coefficient index better than industry standards
- Low losses, excellent short-circuit current withstand capability
- Si3N4 AMB, low thermal resistance
Currently, Leapers 62 mm SiC modules have undergone bench tests and received orders, involving applications such as grid inverters and auxiliary inverters for rail transit vehicles. Downstream customers include domestic power grid and overseas rail transit enterprises.Original – Leapers Semiconductor
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VMAX, a leading Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected the new CoolSiC™ hybrid discrete with TRENCHSTOP™ 5 Fast-Switching IGBT and CoolSiC Schottky Diode from Infineon Technologies AG for its next generation 6.6 kW OBC/DCDC on-board chargers.
Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve a perfect cost-performance ratio for both hard and soft switching topologies. With their superior performance, optimized power density and leading quality, the power devices are ideally suited for VMAX’s on-board chargers.
“We are proud to choose Infineon’s CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, PL Director& Chief Engineer, R&D Department at VMAX.
“We are excited to strengthen our partnership with VMAX with our highly efficient hybrid products,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon. “Together, we will continue to drive e-mobility advancements, providing efficient solutions that meet the requirements of the industry in terms of performance, quality and system cost.”
With its fast, hard switching TRENCHSTOP 5 650 V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode, the hybrid discrete benefits from very low switching losses at switching speeds above 50 kHz. This makes the device an excellent option for high-power electric vehicle charging systems.
In addition, the robust 5 th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximizing reliability. Furthermore, the diffusion soldering of the SiC diode has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability.
With these features, it enables optimum system reliability and longevity, meeting the stringent requirements of the automotive industry. To further maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.
Original – Infineon Technologies
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Wolfspeed, Inc. announced the expansion of an existing long-term silicon carbide wafer supply agreement with a leading global semiconductor company. The expanded agreement, which is now worth approximately $275 million in total, calls for Wolfspeed to supply the company with 150mm silicon carbide bare and epitaxial wafers, reinforcing both companies’ visions for an industry-wide transition from silicon to silicon carbide semiconductor power devices.
“As the global leader in silicon carbide wafer production, Wolfspeed is uniquely positioned to be a critical supplier of high-quality and advanced silicon carbide materials at scale. We will continue to be an important partner to power device manufacturers who need the highest-quality silicon carbide wafers to service their customers,” said Dr. Cengiz Balkas, SVP and GM of Materials for Wolfspeed.
“This agreement further strengthens our long-time partnership with a best-in-class power semiconductor manufacturer. Our collective efforts are helping to address the rapidly expanding opportunity for silicon carbide and better address the unfulfilled demand that exists in the marketplace today.”
The adoption of silicon carbide-based power solutions is rapidly growing across multiple markets, including industrial and EVs. Silicon carbide solutions enable smaller, lighter and more cost-effective designs, converting energy more efficiently to unlock new applications in electrification. This supply agreement will enable silicon carbide applications in a broad range of industries, such as: renewable energy and storage, electric vehicles, charging infrastructure, industrial power supplies, traction and variable speed drives.
Wolfspeed is the global leader in the manufacturing of silicon carbide wafers and epitaxial wafers. The company is currently expanding its manufacturing capacity in the United States and has plans to open a new, automated materials factory in Siler City, North Carolina later this year that will produce 200mm silicon carbide wafers. The new materials factory will increase Wolfspeed’s current materials production capacity by ten times.
Original – Wolfspeed
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JEDEC Solid State Technology Association announced the publication of JEP198: Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices. Developed by JEDEC’s JC-70.1 Gallium Nitride Subcommittee, JEP198 is available for free download from the JEDEC website.
JEP198 presents guidelines for evaluating the Time Dependent Breakdown (TDB) reliability of GaN power transistors. It is applicable to planar enhancement-mode, depletion-mode, GaN integrated power solutions, and cascode GaN power transistors.
This publication covers suggested stress conditions and related test parameters for evaluating the TDB reliability of GaN power transistors using the off-state bias. The stress conditions and test parameters for both High Temperature Reverse Bias Stress and Application Specific Stress-Testing are designed to evaluate the reliability of GaN transistors over their useful lifetime under accelerated stress conditions.
“We are becoming more dependent on power electronics in all facets of our daily lives. As such, the technologies behind those systems are advancing and so too must the device-specific qualification processes. The new GaN-focused Guideline for Reverse Bias Reliability Evaluation is a critical step toward achieving that goal,” said Ron Barr, VP of Quality and Reliability, Transphorm and Co-Chair of the Task Group 701_1.
“This was a collaborative effort conducted by both GaN semiconductor and end product manufacturers. I’m proud of the work the task group delivered. It is an important framework to ensure cross-industry uniformity that will, in the end, provide power system manufacturers the necessary confidence when designing with GaN devices.”
“With the rise of renewable energy and electrification of our lives, the efficiency of power semiconductors is becoming more critical. This is where GaN power semiconductors have proven to be a valuable technology. The Guideline for Reverse Bias Reliability Evaluation is another step in improving confidence in GaN Technology and the products that are on and being brought to market,” said Dr. Kurt Smith, VP of Reliability and Qualification at VisIC Technologies and Chair of JC-70.1.
“This document was developed through collaboration of the multi-corporation team of industry experts to represent the best practices for evaluating GaN devices. It was a long multi-year process to reach consensus and the team is to be commended for the quality document and all of the hard work that went into it.”
Original – JEDEC
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Infineon Technologies AG announced a partnership with Shenzhen based Sinexcel Electric Co., Ltd., a global leader in core power equipment and solutions for the Energy Internet. Infineon will provide Sinexcel with its industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices in combination with EiceDRIVER™ compact 1200 V single-channel isolated gate drive ICs to further improve the efficiency of energy storage systems.
Driven by the carbon peaking and carbon neutrality strategy and the new energy wave, the domestic energy storage market has maintained sustained and rapid development in recent years. According to the Chinese Ministry of Industry and Information Technology, in the first half of 2023, the newly installed capacity of energy storage reached 8.63 GWh, equivalent to the total installed capacity of previous years.
The efficiency and power density of energy storage systems are important factors of product competitiveness, while the size, weight and cost of energy storage systems are closely related to the energy conversion efficiency and directly affect the product cost. Therefore, power semiconductor components play a crucial role.
“The SiC power solution is an important component for future green energy production and storage applications. Infineon’s cooperation with Sinexcel in the field of energy storage inverters enables energy storage systems to achieve advantages such as high efficiency, small size, and light weight, providing a solid guarantee for high-reliability and high-performance energy storage systems,” said Mr. Yu Daihui, Senior Vice President of Infineon Technologies and Head of Green Industrial Power Division in Greater China.
“By using Infineon’s SiC devices, Sinexcel’s energy storage products are obviously more compact and flexible, with significantly higher efficiency and lower losses, which reduces the heat dissipation cost of systems, is conducive to the long-term efficient and stable operation of products, and helps end users improve their operational stability and shorten their return on investment cycle.
This greatly improves the system competitiveness of our products and enhances the trust of clients in our energy storage products and the brand awareness of Sinexcel. We hope that in the future, Infineon will further provide high-performance and high-stability components to help enhance the competitiveness of Sinexcel’s products on the client side,” said Mr.Wei Xiaoliang, Deputy General Manager of Sinexcel.
With more than 20 years of product development and application experience in the SiC field, Infineon has been working nonstop to develop more sophisticated SiC products. Due to their high power density, Infineon’s 1200 V CoolSiC MOSFETs can reduce losses by 50 percent and provide ~2 percent additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight and compact energy storage solutions.
By using Infineon’s 1200 V CoolSiC MOSFETs and EiceDRIVER compact 1200 V single-channel isolated gate drive ICs, Sinexcel’s energy storage converters achieve high power density, minimum electromagnetic radiation and interference, high protection performance and high reliability. This allows a system efficiency of up to 98 percent, which is 1 percent higher than that of traditional solutions, reaching the industry-leading level and better meeting the needs of on-grid and off-grid energy storage applications in both domestic and overseas markets.
Original – Infineon Technologies
