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With support from the Innovation, Technology and Industry Bureau and the Office for Attracting Strategic Enterprises (OASES), the Hong Kong Science and Technology Parks Corporation (HKSTP) has signed a Memorandum of Understanding (MoU) with mainland China-based microelectronics enterprise J2 Semiconductor (Shanghai) Co. Ltd. (J2 Semiconductor), to set up a global research and development (R&D) Centre focusing on third-generation semiconductors at the Hong Kong Science Park, and to set up Hong Kong’s first Silicon Carbide (SiC) 8-inch advanced wafer fab.
This is a milestone moment in the government’s ambition to establish Hong Kong as a leading microelectronics hub in the region. This further promotes new industrialisation, a core for the Innovation, Technology and Industry Bureau which published its “Hong Kong Innovation and Technology Development Blueprint”, with a mission to develop strategically advanced manufacturing industries, such as microelectronics and semiconductors. As one of the world’s largest import and export markets for semiconductors, Hong Kong is at the heart of the Greater Bay Area which offers huge potential in becoming a key hub in the global semiconductor supply and value chain.
Professor Sun Dong, Secretary for Innovation, Technology and Industry, said “This collaboration between HKSTP and J2 Semiconductor to set up the Hong Kong’s first-ever large-scale semiconductor wafer fab, demonstrates the commitment of the HKSAR Government in taking the initiative to turn its ‘new industrialisation’ vision into action. J2 Semiconductor is proactively building up the capacity, quality and competitiveness of Hong Kong’s tech talent pool. The project will also drive the development of related industries, including semiconductor equipment manufacturers, material suppliers, testing service providers, to develop a complete ecosystem to reinforce Hong Kong’s position in the global semiconductor industry value chain.”
The collaboration between HKSTP and J2 Semiconductor is jointly supported by the Innovation, Technology and Industry Bureau and OASES with a view to sustain Hong Kong’s innovation and technology ecosystem and promote new industrialisation. The MoU was witnessed by Professor Sun Dong, Secretary of Innovation, Technology and Industry Bureau, Mr Philip Yung, Director-General of OASES, Ms Lillian Cheong, Under Secretary for Innovation, Technology and Industry, Dr Sunny Chai, Chairman of HKSTP and Dr Robert Tsu, Chairman of J2 Semiconductor. While Mr Albert Wong, CEO of HKSTP and Mr TY Chu, Co-CEO of J2 Semiconductor formally signed the MoU.
Dr Sunny Chai, Chairman of HKSTP said, “The plan of establishing J2 Semiconductor’s R&D Centre in the Science Park will promote Hong Kong’s R&D and advanced manufacturing capabilities of third-generation semiconductor devices. J2 Semiconductor brings the core technology and expertise to Hong Kong in advanced chip design, fabrication process and semiconductor product development, which is an important milestone in the development of microelectronics industry in Hong Kong. As one of Hong Kong’s flagship innovation and technology platforms, we provide high-quality infrastructure and facilities as well as a vast network of partners, which will continue to promote Hong Kong’s microelectronics R&D capabilities and strengthen Hong Kong’s position as an international I&T hub.”
Dr Robert Tsu, Chairman of J2 Semiconductor said, “I am very grateful for the level of attention and support from both the Innovation, Technology and Industry Bureau and HKSTP to this project. The MoU signing officially launches our third-generation semiconductor ‘SiC 8-inch advanced wafer fab’ project. J2 Semiconductor will invest an estimated HK$6.9 billion into the project, with plans to start volume production in the next couple of years, and reach annual production capacity of 240,000 SiC wafers in 2028, generating an annual production value of more than HK$11 billion and creating more than 700 job positions in Hong Kong. The project will assist in the early completion of the localisation of the new energy vehicle supply chain and drive the long-term development and prosperity of the semiconductor industry in Hong Kong.”
As a semiconductor chip design enterprise, J2 Semiconductor is committed to meeting the strong demand for domestically produced automotive chips from the China automotive industry. It mainly provides high-performance silicon carbide (SiC) devices with a focus on automotive, power conversion and communications. J2 Semiconductor’s superior SiC technology can be applied to relevant applications such as electric vehicles, as well as the related infrastructure such as charging stations, smart grids and energy storage.
HKSTP is committed to promoting Hong Kong’s new industrialisation mission and building a world-leading microelectronics ecosystem. HKSTP has established an extensive network of microelectronics hardware infrastructure, including Sensor Packaging and Integration Laboratory (Sensor Lab), Heterogenous Integration Lab (HI Lab) and the Hardware Lab, which can support the end-to-end process of design, prototyping and pilot production of chip-related equipment and systems as well as products. The Microelectronics Centre in Yuen Long Innovation Park is set to begin operation in 2024, supporting HKSTP’s infrastructure to accelerate microelectronics R&D pilot production, creating opportunities for upstream and downstream enterprises in the industry chain.
The microelectronics ecosystem of HKSTP is flourishing, with more than 200 microelectronics related companies. The establishment of the J2 Semiconductor facilities in Hong Kong will create greater level of synergy and knowledge exchange. Currently, five universities in Hong Kong are ranked among the top 100 universities in the world, with more than 100 university researchers engaged in microelectronics research, and promote the R&D of third-generation semiconductors. In this year’s Budget Speech, the HKSAR Government announced its plan to establish a Microelectronics Research and Development Institute to strengthen collaboration with universities, R&D centres and companies in the industry, and further accelerate the “1 to N” translation of R&D outcomes and bolster industry development.
Original – HKSTP
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EPC Space announces the Grand Opening of their new facility in Andover, Massachusetts. Guests are invited to join the EPC Space team for a day of activities that will explore the possibilities that GaN presents to significantly outperform silicon-based devices and enable higher power densities, higher efficiencies, and more compact and lightweight circuitry for critical spaceborne missions.
Radiation hardened (rad hard) GaN improves the performance of power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, lidar for autonomous navigation and docking, and deep space probes.
Event Highlights
- Start the day with a warm welcome and enjoy a welcome reception. Guests will receive drink tickets for the upcoming Cocktail Reception and an automatic entry into an exciting raffle.
- Get a glimpse into EPC Space’s remarkable journey and accomplishments as CEO, Bel Lazar, officially opens the event.
- Witness the ceremonial opening of our new facility.
- Explore our facility with guided tours. Immerse yourself in a product showcase and demonstrations, featuring a dedicated Applications table hosted by EPC Space engineers. They will be available to answer questions and demonstrate real-world applications such as DC-DC, POL, and motor control.
- Book Signing by Dr. Alex Lidow (2:30 PM – 3:30 PM): Take this opportunity to meet with Dr. Alex Lidow, CEO of EPC, and author of “GaN Power Devices and Applications,” who will be available to sign copies.
- Connect with EPC Space experts for personalized discussions and insights into rad hard GaN technology.
- Enter for a chance to win exciting prizes during the raffle.
- Network with fellow attendees and the EPC Space team during the Cocktail Reception.
To attend send an RSVP by October 18, 2023 to info@epc.space
“EPC Space is proud to be at the forefront of providing radiation hardened GaN solutions for power conversion to the aerospace industry and beyond,” said Bel Lazar, CEO of EPC Space. “We are happy to invite our customers and partners to be a part of this event and see first-hand how our technology is shaping the future of high reliability applications”.
Original – EPC Space
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With decades of expertise in power device packaging and testing, JCET Group offers a comprehensive power product portfolio encompassing IGBT, SiC, GaN, and more. In the field of high-density power solutions for automotive applications, JCET’s unique power module technology positions us at the forefront of power main drive solutions.
JCET’s innovative packaging technology for high power density Silicon Carbide (SiC) power modules minimizes parasitic effects and thermal resistance, while our groundbreaking interconnect technology ensures high reliability. Reduced power loss and improved performance, making JCET the preferred choice for high-reliability SiC device packaging for the automotive industry.
The rapid growth of the power semiconductor market in automotive applications is being driven by the acceleration of vehicle electrification. In this evolving landscape, a multitude of power devices find applications in crucial automotive systems such as motor control, DC-DC conversion, air conditioning drives, on-board chargers (OBC), and battery management for electrical vehicles.
According to research by Strategy Analytics, the value of power devices in battery electric vehicles (BEVs) is nearly five times that in traditional fuel vehicles. This is where SiC devices come into play, offering several advantages. SiC devices feature smaller conductor resistors per unit area, higher voltage capabilities, faster switching speeds, and the ability to operate at high temperatures. These characteristics are instrumental in enhancing the power density of the inverter, ultimately leading to improved operational efficiency and extended mileage for electric vehicles under real-world conditions.
JCET combines low stray inductance package technology, advanced interconnect packaging technology, and cutting-edge thermal management solutions, tailoring our packaging processes to meet individual customer requirements. Within this package, a suite of integrated solutions, including the whole-silver sintering process, copper wire bonding, and single-side direct water cooling, is employed.
Furthermore, SiC devices, with their smaller footprint, increased power density, and higher breakdown voltage compared to conventional silicon-based power devices, are at the core of our packaging. When integrated into an 800V platform, SiC devices deliver substantial system advantages, enabling rapid charging and extended mileage. JCET’s unwavering commitment to optimizing packaging technology is evident in our High-Performance Device (HPD) package, which is continuously fine-tuned to excel in SiC high-frequency switching applications.
With the growing adoption of SiC devices across diverse sectors like automotive controllers, charging stations, and photovoltaic energy storage, JCET has pioneered innovative designs encompassing packaging materials, internal connections, and packaging structures. JCET has introduced a range of packaging solutions tailored to meet various user requirements, including:
- 400V platform, A0/A00 vehicles within 70KW: Si Hybrid Package1 solution;
- 400V platform, Class A vehicles between 100-200KW: Si/SiC Hybrid Package Driver solution;
- 800V platform, Class B and luxury cars with 200KW and above: SiC single/double sided heat dissipation solution.
Automotive power devices, including SiC, hold vast market potential and exhibit a high level of technical innovation certainty. This presents a compelling opportunity for device designers and manufacturers. Looking ahead, JCET remains committed to its core mission of advancing power device packaging solutions, We are dedicated to expanding our technology offerings, ensuring our customers have a diverse array of options, helping them integrate more efficient and reliable technologies into the new energy vehicle systems.
Original – JCET
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Mitsubishi Electric Corporation has agreed with Coherent Corp. to invest USD 500 million in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.
The electric vehicle market is expanding worldwide and is one of several emerging applications driving the exponential growth of SiC power devices, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power devices. The high efficiency of SiC power devices is expected to contribute significantly to global decarbonization and green transformation.
Mitsubishi Electric has been a leader in SiC power modules for high-speed trains, high-voltage industrial applications, and home appliances for many years. The company made history by launching the world’s first SiC power modules for air conditioners in 2010, and became the first supplier of a full SiC power module for Shinkansen high-speed trains in 2015. Mitsubishi Electric has also accumulated extensive expertise by meeting market needs for advanced performance and high reliability by deploying superior processing, screening, etc. for the development and manufacture of SiC power modules.
Mitsubishi Electric has been procuring high-quality 150mm SiC substrates from Coherent for the production of SiC power modules for many years. In addition to developing high-quality 200mm SiC substrates with Coherent, Mitsubishi Electric plans to invest approximately 100 billion yen to construct a new 200mm SiC wafer plant in Kumamoto Prefecture, Japan beginning in 2026.
By further deepening its collaboration with Coherent through this investment, Mitsubishi Electric aims to stabilize its procurement of SiC substrates for SiC power modules, for which demand is forecasted to grow rapidly, and thereby expand its supply of reliable high-performance SiC power devices to meet rising global demand.
Dr. Masayoshi Takemi, Executive Officer, Group President, Semiconductor & Device of Mitsubishi Electric, said: “Demand for SiC power semiconductors is expected to grow exponentially as the global market for electric vehicles increases in line with the transition to a decarbonized world. To capitalize on this trend, we have decided to expand our SiC power semiconductor production capacity, including by constructing a 200mm wafer plant in the Shisui area of Kumamoto Prefecture. We are delighted to strengthen our partnership with Coherent by investing in this new SiC company, which will provide us with a stable supply of high-quality SiC substrates essential for our increased supply capacity.”
Original – Mitsubishi Electric
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DENSO CORPORATION announced a minority investment of US$500 million in Silicon Carbide LLC, Coherent Corp.’s silicon carbide (SiC) business, which will be separated into an independent subsidiary. Silicon Carbide LLC, which was originally established by Coherent in April 2023, manufactures SiC wafers. This investment will ensure a long-term stable procurement of SiC wafers to enhance the competitiveness of our electrification components. With this equity investment, DENSO will hold 12.5% equity stake in Silicon Carbide LLC.
As vehicle electrification accelerates as part of the global effort to reduce CO2 emissions, semiconductor demand has also grown rapidly. SiC is a key material for devices that significantly contribute to reducing power loss, downsizing, and lightweighting of Battery Electric Vehicle (BEV) systems, owing to its superior performance in high-temperature, high-frequency and high-voltage environments compared to that of conventional silicon.
Through this investment in Silicon Carbide LLC, which has an excellent track record in SiC wafer quality and mass production capabilities, DENSO will secure a stable procurement of quality 150mm and 200mm SiC wafers. This will further strengthen the competitiveness of DENSO’s inverters, which drive and control motors of electric vehicles.
“We are very pleased to establish a strategic relationship with Coherent, which has a world-class track record in SiC wafer manufacturing. Through this investment, we will secure a stable procurement of SiC wafers, which are critical for BEVs, and contribute to the realization of a carbon-neutral society by promoting the widespread adoption of BEVs,” said Shinnosuke Hayashi, President & COO, Representative Member of the Board at DENSO.
Dr. Vincent D. Mattera, Jr., Chair and CEO at Coherent, said, “We are excited to expand our strategic relationships with DENSO to capitalize on the significant demand for silicon carbide. After a thorough review of strategic alternatives for our Silicon Carbide business, we determined that the creation of a separate subsidiary and the strategic investments from DENSO, a leader in SiC power devices and modules, is the best path forward to maximize shareholder value and position the Business for long-term growth.
The investments from our strategic partners will be used to accelerate our capacity expansion plans and help sustain our leadership position, while ensuring the development of a robust and scalable supply for the rapidly growing market for SiC-based power electronics, largely driven by the explosive growth of the global electric vehicle market.”
DENSO will continue to contribute to the realization of a carbon-neutral society by promoting the widespread adoption of electrified products in all regions around the world.
Original – DENSO
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Transphorm, Inc. introduced three SuperGaN® FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s TOLL package configuration is industry standard, meaning the SuperGaN TOLL FETs can be used as drop-in replacements for any e-mode TOLL solution.
The new devices also offer Transphorm’s proven high voltage dynamic (switching) on-resistance reliability that is generally lacking in leading foundry-based e-mode GaN offerings. To sample the devices, visit Transphorm’s product page: https://www.transphormusa.com/en/products/.
The three surface mount devices (SMDs) support higher power applications operating within an average range of 1 to 3 kilowatts. These power systems are typically found in high performance segments such as computing (AI, server, telecom, data center), energy and industrial (PV inverters, servo motors), and other broad industrial markets which, collectively, have a current global GaN TAM of $2.5B. Notably, the FETs are optimal solutions for today’s rapidly expanding AI systems that rely on GPUs requiring 10 to 15 times the power of traditional CPUs.
Transphorm’s high power GaN devices are already widely supplied to leading customers who use them to power in-production high performance systems including datacenter power supplies, high power gaming PSUs, UPSes, and microinverters. These applications can also be supported by the TOLL devices as can electric-vehicle-based DC-to-DC converters and onboard chargers, with the underlying SuperGaN die already automotive (AEC-Q101) qualified.
The SuperGaN TOLL FETs represent the sixth package type offered by Transphorm, giving customers the widest selection of packages to meet their unique design requirements. As with all Transphorm products, the TOLL devices harness the inherent performance and reliability advantages made possible by the normally-off d-mode SuperGaN platform.
For a detailed competitive analysis between SuperGaN and e-mode GaN, download the company’s latest white paper titled The Fundamental Advantages of d-Mode GaN in Cascode Configuration. The white paper’s conclusion aligns with a head-to-head comparison released earlier this year showing the 72 milliohm SuperGaN FETs outperforming larger 50 milliohm e-mode devices in a commercially available 280 W gaming laptop charger.
SuperGaN devices lead the market with unmatched:
- Reliability at < 0.03 FIT
- Gate safety margin at ± 20 V
- Noise immunity at 4 V
- Temperature coefficient of resistance (TCR) at 20% lower than e-mode
- Drive flexibility with standard drivers and protection circuits readily available in silicon-based controllers/drivers
Device Specifications
The robust 650 V SuperGaN TOLL devices are JEDEC qualified. Because the normally-off d-mode platform pairs the GaN HEMT with a low voltage silicon MOSFET, the SuperGaN FETs are easy to drive with commonly used off-the-shelf gate drivers. They can be used in various hard- and soft-switching AC-to-DC, DC-to-DC, and DC-to-AC topologies to increase power density while reducing system size, weight, and overall cost.Part Dimensions (mm) RDS(on) (mΩ) typ RDS(on) (mΩ) max Vth (V) typ Id (25°C) (A) max TP65H035G4QS 10 x 12 35 41 4 46.5 TP65H050G4QS 10 x 12 50 60 4 34 TP65H070G4QS 10 x 12 72 85 4 29 Original – Transphorm
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Supplier of semiconductor epiwafers, SweGaN, recently began the transformation from start-up to scale-up. AFRY is assisting SweGaN’s scale-up journey with a wide variety of services to build a new state-of-the-art production facility in Linköping. A rapidly growing global sector, semiconductors – are key component within electric vehicles, solar inverters, power supplies and more – all contributing towards a more sustainable society.
AFRY’s cyber security experts are guiding SweGan in securing its IP (Immaterial Properties) and trade secrets and ensuring customer integrity. Additionally, AFRY is providing a bouquet of expert professional services including IT, OT, ERP, CE marking, construction of the new production facility, server room construction, electrical, security, work environment, quality assurance, risk management and project management.
“Initially, we asked AFRY to support and secure our cyber security operations. After understanding AFRY’s wide range of competencies and services, we determined it would be highly favourable to bring all professional services for the new facility under one roof. Partnering with AFRY, we can now focus SweGaN resources on our growth and expansion goals,” says Henrik Tölander, COO SweGaN.
“I am very proud that SweGaN chose us for this project. The client saw the value of one supplier for all their professional service needs. As SweGaN’s full service provider, we can gain a comprehensive, holistic overview of their needs and offer a customer-tailored solution,” says Michael Blom, Section Manager at AFRY.
The opening of the semiconductor production facility will enable Sweden, and in extension Europe, to strengthen the European supply chain and compete against Taiwan, China, the U.S, South Korea and Japan – currently the main providers of semiconductors. Increased access to robust semiconductor offerings in Europe will make it easier to develop and produce electric vehicles, solar inverters, and power supplies in Europe, while also reducing dependency on competing countries.
Original – AFRY
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Aehr Test Systems announced financial results for its first quarter of fiscal 2024 ended August 31, 2023.
Fiscal First Quarter Financial Results:
- Net revenue was $20.6 million, up 93% from $10.7 million in the first quarter of fiscal 2023.
- GAAP net income was $4.7 million, or $0.16 per diluted share, up from GAAP net income of $589,000, or $0.02 per diluted share, in the first quarter of fiscal 2023.
- Non-GAAP net income, which excludes the impact of stock-based compensation, was $5.2 million, or $0.18 per diluted share, compared to non-GAAP net income of $1.3 million, or $0.05 per diluted share, in the first quarter of fiscal 2023.
- Bookings were $18.4 million for the quarter.
- Backlog as of August 31, 2023 was $22.3 million. Effective backlog, which includes all orders received since the end of the first quarter, is $24.0 million.
- Cash provided by operations was $3.9 million.
- Total cash, cash equivalents, and short-term investments as of August 31, 2023 were $51.0 million, up from $47.9 million at May 31, 2023.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“We finished the first quarter with solid revenue and non-GAAP net income, the strongest first quarter in our history, which has historically been our seasonally softest quarter. We are off to a very good start to our fiscal year and are reaffirming our expectation to grow fiscal full year revenue by at least 50% and profit by over 90% year over year.
“During the quarter we had record shipments of our FOXTM WaferPak full wafer Contactors in both revenue and units and are very pleased with the continued stream of new designs we are seeing. Our new design volume has tripled over the last nine months as we are seeing more electric vehicles coming online with their own specific device design for inverters and onboard chargers.
“We have now received customer acceptance of both configurations of our new fully automated FOX WaferPak Aligner, which allows hands free operation of WaferPak handling and alignment and is available either as a standalone unit or in full integration with the FOX-XP system. We recognized revenue for two standalone WaferPak Aligners in the first quarter and received customer acceptance and sign off on two fully integrated WaferPak Aligners with the integrated FOX-XPs in September. These acceptances and the associated revenue recognition are a great way to start our second quarter and pave the path for revenue recognition immediately upon future shipments of these products.
“Additionally, we announced last month our sixth customer for silicon carbide wafer level burn-in. This new customer is a US-based multibillion-dollar semiconductor supplier that serves several markets, including automotive, computing, consumer, energy, industrial, and medical markets. After conducting a detailed financial evaluation of Aehr and Aehr’s FOX family of products, including multiple onsite visits to Aehr’s application lab, this new customer purchased an initial FOX-NP system, WaferPak Aligner, and multiple WaferPaks for engineering, qualification, and small lot production of their silicon carbide power devices.
This system is configured with our new Bipolar Voltage Channel Module (BVCM) and Very High Voltage Channel Module (VHVCM) options that enable new advanced test and burn-in capabilities for silicon carbide power semiconductors. This customer has indicated that as their production capacity increases, they intend to quickly move to our FOX-XP multi-wafer test and burn-in systems for high-volume production.
“Including this newest customer, our last two announced customers have selected our systems primarily for applications other than electric vehicles including industrial, solar, and commuter electric trains. This further extends our application space beyond the opportunity we see in silicon carbide for traction inverters and onboard and offboard chargers for electric vehicles. These applications expand our market opportunity to include what William Blair forecasts will be an additional 2.8 million 6” equivalent wafers needed per year by 2030 for applications beyond the 4.5 million 6” equivalent wafers per year it forecasts will be needed just for electric vehicles.
“We continue to see increased interest from prospective new customers for our solutions for silicon carbide wafer level burn-in. In the last few weeks, we have attended two international conferences in Europe and met with more than a dozen companies that are not currently using our solutions, in addition to meeting with all six of our current silicon carbide customers. These face-to-face meetings included multiple meetings with one of the market leaders in silicon carbide with whom we have been doing a significant automotive qualification of wafer level burn-in for well over two years.
This benchmark and qualification process has made even more progress in the last few months with a very large number of wafers being run at our facility and multiple meetings and reviews of the data. We continue to feel confident that this customer will move forward with us using the FOX-XP multi-wafer solution for their high-volume needs, including initial purchase orders and system shipments within this fiscal year. In the next few weeks, we also plan to meet with a significant number of potential new customers as well as end users in Asia, as we are seeing increasing activities and opportunities heating up there. It is a very exciting time in the silicon carbide and electric vehicle markets right now and we have never been busier.
“We are also in extensive engagements with multiple gallium nitride suppliers, including companies that also supply silicon carbide devices. Gallium nitride is similar to silicon carbide in that both of these semiconductor compounds are considered wide bandgap semiconductors that are able to withstand high-voltage applications more directly than silicon. Gallium nitride semiconductor material has characteristics that make it optimal for lower power converter applications such as consumer power converters, solar micro inverters, and industrial motor controllers, compared with silicon carbide that is optimal for higher power / higher voltage applications such as traction inverters in electric vehicles, trucks, trains, and converters used in charging infrastructure and storage.
The gallium nitride market is another potential growth driver for our wafer level solutions, particularly for automotive and photovoltaic applications where burn-in appears to be critical for meeting the initial quality and reliability needs of those markets. This fiscal year, while we do expect to recognize some revenue for systems, WaferPaks and Aligners for gallium nitride applications, we continue to expect a significant majority of our revenue to come from silicon carbide.
“In addition to these power semiconductor applications, we continue to be excited about the current application of silicon photonics devices for fiber optic transceivers used in data centers and data and telecommunication networks, as well as the major market opportunity we see with the upcoming application of silicon photonics integrated circuits for use in optical chip-to-chip communication. As we’ve previously announced, we received a first order from a current major silicon photonics customer for a new configuration of our FOX-XP multi-wafer test and burn-in system for use in very high-power silicon devices, and we expect to receive orders for additional production systems as they increase production of these devices.
While we believe that it will likely be several years before we will potentially see significant revenue generated from this optical chip-to-chip communications market, we are working with some of the leaders in silicon photonics to ensure that we have the products and solutions available to meet their needs for this potentially significant market application.
“In conclusion, we are encouraged by the continued positive momentum we are seeing for silicon carbide in electric vehicles and are also excited about the expanding growth opportunities we are seeing in several additional markets with current and prospective customers.”
Original – Aehr Test Systems
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Revasum, Inc. announced a strategic partnership with SGSS, a global leader in high-performance materials and innovative solutions. This partnership aims to revolutionize the semiconductor industry by developing a cutting-edge line of grinding wheels specifically designed for Silicon Carbide (SiC) wafers.
Silicon Carbide is a critical material in the production of power devices and has gained significant prominence in the semiconductor industry due to its exceptional properties. The demand for SiC wafers has been steadily growing, and achieving the highest quality wafers is paramount to meet the evolving needs of the market.
The partnership between Revasum and SGSS represents a collaboration between two industry giants with a shared commitment to innovation and excellence. By combining Revasum’s expertise in semiconductor manufacturing equipment with SGSS’s cutting-edge abrasive materials, this alliance seeks to develop a new generation of surface finishing solutions that will set new standards for precision, efficiency, and surface quality in SiC wafer production with sustainability and environmental responsibility at the core of our collaboration.
This partnership holds great promise for the semiconductor industry, paving the way for enhanced SiC wafer production processes that will contribute to the advancement of power electronics, electric vehicles, renewable energy, and various other technology sectors.
Mr. Scott Jewler, CEO of Revasum, Inc., commented on the partnership, saying, “We are excited to join forces with Saint-Gobain Surface Solutions, a renowned leader in materials science and innovation. This partnership will enable us to provide our customers with cutting-edge tools and solutions to address the increasing demand for high-quality Silicon Carbide wafers.”
Mr. Jean-Claude Lasserre, CEO Saint-Gobain Surface Solutions stated, “Our collaboration with Revasum exemplifies our commitment to delivering high-performance materials and solutions that push the boundaries of what is possible. Together, we will unlock new levels of precision and efficiency in Silicon Carbide wafer grinding with highest levels of sustainable products and solutions.”
Both Revasum, Inc. and SGSS are eager to embark on this journey of innovation and look forward to delivering groundbreaking solutions that will shape the future of Silicon Carbide wafer manufacturing.
Original – Revasum
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Solitron Devices has acquired Micro Engineering Inc. located in Apopka, FL. Specializing in highly integrated, high reliability assemblies, Micro Engineering has over forty years of experience servicing medical, industrial, and aerospace applications.
Focused on low to mid volume production, Micro Engineering offers services from conceptual design and prototyping to full turnkey manufacturing and functionally tested assemblies. Additional services include hand assembly, wire harnessing, specialized coatings and full box builds.
Mark Matson, Solitron President & COO, said, “Micro Engineering is an exceptionally synergistic fit with Solitron, expanding and complimenting engineering and manufacturing capabilities. Solitron’s expertise with chip and wire, silicon carbide and high-density multi-chip modules combined with Micro Engineering’s PCBA, SMT and system level box build capability offers a strong suite of technology to customers.
This new capability for increased functionality and power density will accelerate introductions into emerging markets particularly utilizing Silicon Carbide (SiC) and Gallium Nitride (GaN). The combination of Solitron and Micro Engineering will also broaden both companies’ presence in medical, high end industrial and aerospace applications.”
Combined manufacturing capabilities now include 3D CAD modelling, 3D Printing, CAE machining, aluminum & gold wire bonding, void free soldering, fine pitch SMT for BGA’s, rigid, flex and double-sided circuit card assemblies; right up through full box builds. Product qualification infrastructure includes thermal shock, vibration, mechanical shock, centrifuge, salt spray atmosphere, burn-in and more. Micro engineering is ISO-9001 registered.
Original – Solitron Devices
