Alpha and Omega Semiconductor Tag Archive

  • Alpha and Omega Semiconductor Introduces GTPAK™ and GLPAK™ MOSFET Packages for High-Current Applications

    Alpha and Omega Semiconductor Introduces GTPAK™ and GLPAK™ MOSFET Packages for High-Current Applications

    3 Min Read

    Alpha and Omega Semiconductor Limited (AOS) announced the release of two state-of-the-art surface mounting package options for its industry-leading high power MOSFET portfolio. Designed to meet the robust packaging requirements for the most demanding applications that require increased performance and reliability, the new GTPAK™ and GLPAK™ packages will first be available on AOS’ AOGT66909 and AOGL66901 MOSFETs respectively. Combining AOS-proven robust MOSFET technology with advanced packaging know-how, these devices provide low ohmic and high current capabilities, critical to reducing the number of parallel MOSFETs needed in high current designs such as in next-generation e-mobility and industrial applications.

    The GTPAK offered with the AOGT66909 is a topside cooling package designed with a large exposed pad for more efficient heat transfer. The topside cooling technology transfers most heat to the heat sink mounted on the top exposed pad. This feature allows the GTPAK to offer a more effective thermal dissipation route than going through the PCB board, allowing a lower-cost PCB, such as FR4, to be used. 

    The GLPAK offered with the AOGL66901 is a gull-wing version of AOS’ successful TOLL package. It is designed using AOS’ advanced clip technology to achieve a high inrush current rating. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.

    The GTPAK and GLPAK packages feature gull-wing leads, enabling excellent solder joint reliability even for insulated metal substrates (IMS) applications. This gull-wing construction also provides enhanced thermal cycling for IMS boards and other critical applications that must meet higher reliability objectives. AOS MOSFETs in the new GTPAK and GLPAK packages are manufactured in IATF16949-certified facilities and are compatible with automated optical inspection (AOI) manufacturing requirements.

    “We are committed to delivering new solutions to help our customers meet or exceed their power performance requirements. By offering our industry-leading MOSFETs in the new robust GTPAK and GLPAK packages, AOS allows designers to select from two state-of-the-art packaging technologies that offer significant performance improvements.  Furthermore, the advanced technologies in our AOGT66909 and AOGL66901 MOSFETs will help simplify new designs by reducing the number of devices needed while also providing the necessary higher current capability that makes overall system cost savings possible,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.

    Technical Highlights

     Continuous Drain
     Current (A)
    Pulsed Drain 
    Current (A)
    RDS(ON) Max 
    (mOhms)
    Part NumberPackageVDS
    (V)
    VGS
    (±V)
    TJ
    (°C)
    @25°C@100°C@25°C@10V
    AOGT66909GTPAK1002017536625814641.5
    AOGL66901GLPAK1002017544831617901.25

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  • Alpha and Omega Semiconductor to Showcase Groundbreaking AI-Optimized Controllers and Advanced Packaging Solutions at APEC 2025

    Alpha and Omega Semiconductor to Showcase Groundbreaking AI-Optimized Controllers and Advanced Packaging Solutions at APEC 2025

    3 Min Read

    Alpha and Omega Semiconductor Limited (AOS) will showcase its complete line of advanced power management solutions at the Applied Power Electronics Conference (APEC). These new products offer advanced features enabling designers to meet power management challenges in several key application areas.

    Booth highlights

    • Datacenters, AI Server, and High-Performance Graphics Cards:  AOS is showcasing two new controllers specifically designed for high-performance GPUs and SoCs used in graphics cards and AI servers. The AOZ73016QI is a 16-phase, 2-rail controller specifically designed to the latest OpenVReg16 (OVR16) specifications. The AOZ73016QI controller design is based on the company’s high-performance, proprietary AOS Advanced Transient Modulator (A2TM) control scheme. In addition to supporting all the basic requirements of the OVR16 specification, the new AOS controller offers value-added features such as RDS(on) and DCR sensing for current monitoring and balance. These features enable AOS’ controller to support DrMOS and Smart Power Stages (SPS) to deliver a complete AI server and graphic card power solution and increase design flexibility. The AOZ73016QI offers full programmability via the PMBUS interface and is also AVS bus compliant. The device features digitally programmable voltage and current regulation loops, minimizing the external components required to implement a solution. It supports electronic control system (ECS) programmability with the ability to update configuration in the field and to pre-program up to six configuration settings with a pin-strap selection. As the world’s first OVR4-22 multiphase PWM controller, the AOZ73004CQI has received full OpenVReg OVR4-22 compliance. Its advanced design helps safely throttle GPU power for maximized performance. It leverages AOS’ breakthrough control scheme that meets stringent power delivery requirements with minimum external components and offers world-class system power efficiency. When paired with AOS’ industry-leading DrMOS and Smart Power Stages, the AOZ73016QI and AOZ73004CQI form a complete solution for GPU or AI SoC power in datacenters, graphics cards, and advanced computing.

    • Power Distribution Board for AI Datacenters (Power MOSFETs):  AOS is showcasing an application-specific MOSFET AOTL66935 for 48V Hot Swap with High Safe Operating Area (SOA) in TOLL package, and soon available in LFPAK8x8 (AOLV66935). AOTL66935 and AOLV66935 have ultra-low RDS(on) (<1.9mOhm) and high junction temperature ratings at 175°C. AOS designed these MOSFETs with low on-state resistance and robust linear mode performance to protect AI servers and telecom equipment where performance, reliability, and quality are essential. 
       

    • High Power Motor Drive Applications:  AOS has developed state-of-the-art package options for its industry-leading MOSFET portfolio. Designed to meet the increasing performance and reliability application demands, the LFPAK, GTPAK™, and GLPAK™ packages combined with AOS’ MOSFET technology deliver low ohmic, low parasitic inductance, and high current capability advantages. These packages also feature gull-wing leads, offering a rugged solution for board-level environmental stresses. These features offer key benefits in reducing losses, improving power density, lowering EMI, and enhancing board-level reliability for key applications such as e-mobility, battery management, and other high-current applications. The GTPAK offered with the AOGT66909 is designed to mount a heatsink with a large exposed pad on the package surface. The topside cooling technology effectively transfers most heat to the heatsink instead of PCB, dissipating heat more efficiently. The GLPAK offered with the AOGL66901 is designed to achieve a high inrush current rating using AOS’ advanced clip technology. The Gull-wing design enhances board-level reliability. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.

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  • Alpha and Omega Semiconductor to Demonstrate Expanding Line Power Semiconductor, Power IC and Module Solutions at electronica 2024

    Alpha and Omega Semiconductor to Demonstrate Expanding Line Power Semiconductor, Power IC and Module Solutions at electronica 2024

    3 Min Read

    Alpha and Omega Semiconductor Limited (AOS) will exhibit and demonstrate the capabilities of its expanding line of breakthrough application-specific power semiconductor, power IC and module solutions at electronica 2024. Designed to meet the dynamic, important power management challenges in several key application areas and markets, the AOS products highlighted at electronica will include:

    • Automotive and Industrial: AOS Gen2 SiC MOSFETs support the needs of a wide array of automotive and industrial applications with its latest advanced packages. AOS offers two AEC-Q101 automotive-qualified surface mount options for extreme power density, including a standard D2PAK-7L and the GTPAK™ with surface mount topside cooling featuring a Kelvin source for the highest efficiency. AOS has several SiC modules that meet higher power charging stations and industrial solar inverter design requirements. Also displayed will be AOS’ comprehensive line 10mOhm-500mOhm, 650V-1700V SiC MOSFETs.
    • New Motor Drive ICs: AOS will announce a new range of 60V and 100V driver ICs for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half-bridge driver IC, a 100V 3-phase driver IC, and a 60V 3-phase driver IC. These products all support 100 percent duty cycle operation, and demo boards using AOS motor driver IC and AlphaSGT™ MOSFETs (30V−150V) will be featured.
    • Power Supply and Renewable Energy: A significant solution in AOS’ growing High-Voltage Super Junction MOSFET portfolio is its industry-leading optimized αMOS5™ 600V to 700V Super Junction MOSFETs, which helps designers achieve efficiency and density goals while satisfying budget goals. Featuring fast switching, a robust UIS/body diode, and ease of use, these state-of-the-art MOSFETs meet the latest server, telecom rectifier, solar inverter, EV charger, gaming, PC, and universal charging/PD design requirements.
    • Innovative Packaging: AOS’ highly efficient 25V−150V MOSFETs are available in advanced packaging, including a double-sided cooling DFN 5×6 that delivers industry-leading thermal resistance. Also available is the newly-released LFPAK 5×6 package, which features gull-wing leads for enhanced board reliability and larger copper clips that significantly improve current carrying capability. 
    • Automotive and E-mobility: In AOS’ increasing line of automotive MOSFETs, the new automotive-grade 80V (AOTL66810Q) and 100V (AOTL66912Q) MOSFETs in the TOLL package are designed to achieve the highest current capability. The AOS TOLL package utilizes advanced clip technology to achieve a high in-rush current rating and very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages based on standard wire-bonding technology packages. These new automotive-grade MOSFETs help designers meet the power requirements in electric vehicles, battery management systems (BMS), and high-performance inverters (BLDC motors) for e-mobility.
    • Intelligent Power Modules, Mega IPM7: AOS has integrated its latest RC IGBT and high-voltage gate driver into the world’s most compact package design, delivering mega power of up to 100W in motor control applications. The portfolio covers 600V / (1A−3A) in various package options (Mega IPM-7D, IPM-7DT, IPM-7E) that are ideal solutions for various design requirements.

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  • Alpha and Omega Semiconductor Delivered New LFPAK 5x6 Highly Robust Power MOSFETs

    Alpha and Omega Semiconductor Delivered New LFPAK 5×6 Highly Robust Power MOSFETs

    2 Min Read

    Alpha and Omega Semiconductor Limited (AOS) announced its new highly robust power MOSFET LFPAK 5×6 package. AOS’s new LFPAK product offering is available in a wide range of voltages: 40V, 60V, and 100V, and it is designed to withstand harsh environments while maintaining MOSFET performance. The new devices are found in a broad range of applications such as industrial, server power, telecommunications, and solar, where high reliability is required.

    AOS’s LFPAK packaging enables higher board-level reliability due to key packaging features such as gull wing leads, which offer a ruggedized solution for board-level environmental stresses. The gull-wing leads also enable optical inspection during PCBA manufacturing. Another feature enhancement is the LFPAK’s larger copper clip, which improves electrical and thermal performance. Advantages of the large clip include improved current handling capabilities, reduced on-resistance, and better heat dispersion compared to wire bonding. A large clip also has low parasitic inductance, enabling lower spike voltage in switching applications. All these features significantly improve the robustness of the MOSFET, and utilizing AOS’s advanced shielded gate MOSFET Technology (AlphaSGT™) enables designers to find an optimized solution to achieve high reliability under the harshest environmental conditions.

    “Designers have long trusted AOS power semiconductors in their applications, and LFPAK 5×6 will expand
    solution capability,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.

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  • Alpha and Omega Semiconductor Announced Expansion Package Portfolio for the Second Generation 650V to 1200V αSiC MOSFETs

    Alpha and Omega Semiconductor Announced Expansion Package Portfolio for the Second Generation 650V to 1200V αSiC MOSFETs

    3 Min Read

    Alpha and Omega Semiconductor Limited announced the expansion of their package portfolio options available for their second generation 650V to 1200V αSiC MOSFETs. Applicable to many critical applications such as xEV charging, solar inverters, and industrial power supplies, the new package selections give designers the added flexibility of multiple system optimization options to further maximize system efficiency while streamlining their manufacturing process.

    AOS will showcase its expanded surface mount and module package options at PCIM Europe 2024 in Nuremberg, Germany, June 11-13.

    The first new surface mount package is available for the AOBB040V120X2Q, AOS’ new 1200V/40mOhm αSiC MOSFET in a standard D2PAK-7L surface mount package. This AEC-Q101 qualified product is designed to replace traditional through-hole packages. It is ideal for applications such as on-board chargers (OBCs) where efficient cooling can be provided by vias and backside PCB heatsinks, simplifying the assembly flow and maximizing the power density. In addition, the low inductance package combined with the fast driver sourcesense connection positions these AOS αSiC MOSFETs as one of the most efficient power-switching solutions in the market.

    For additional design flexibility, AOS is releasing its GTPAK™ surface mount package with topside cooling features. In designs where a topside-mounted heatsink is viable, the direct heat path from the GTPAK minimizes the thermal resistance. It enables higher power dissipation for more effective PCB routing. The first AOS product in GTPAK is the AOGT020V120X2. This 1200V/20mOhm αSiC MOSFET is an ideal solution to meet the requirements of high-efficiency solar inverter and industrial power supply applications.

    Finally, AOS announced the AOH010V120AM2 as the first product in its new AlphaModule™ high power baseplate-less module family. This 1200V/10mOhm half-bridge αSiC module features press-fit pins and an integrated thermistor. It is in a standard footprint module that enables the replacement of multiple discrete devices into a single compact form factor while simplifying both the mechanical and electrical design by providing a clear separation of electrical and cooling paths. Single modules are suitable for residential solar inverters, or several modules in parallel will allow scaling to power levels necessary to drive the needs of fast DC charging stations.

    “With the continued growth in EVs, energy infrastructure, and renewable energy, we continue to see increased interest in our αSiC MOSFETs. The expansion of our product portfolio to include these new advanced package options gives our customers the design flexibility they need to take advantage of our superior αSiC performance and continue the trend of pushing power systems to higher density and efficiency,” said David Sheridan, Vice President of SiC products at AOS.

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  • Alpha and Omega Semiconductor to Showcase Expanding Line of Advanced Power Management Solutions at PCIM 2024

    Alpha and Omega Semiconductor to Showcase Expanding Line of Advanced Power Management Solutions at PCIM 2024

    3 Min Read

    Alpha and Omega Semiconductor Limited (AOS) will showcase its expanding line of advanced power management solutions at PCIM 2024. Designed to meet the dynamic, important power management challenges in several key application areas and markets, the AOS products highlighted at PCIM include:

    • New Silicon Carbide (SiC) MOSFET Announcement at PCIM: Supporting the needs of a wide range of automotive and industrial applications, AOS will introduce three new advanced package options for its latest Gen2 SiC MOSFET line. The new packages comprise a surface mount topside cooling option with a Kelvin source that meets the needs of the most power-dense advanced designs. It will also be announced that an AEC-Q101-qualified surface mount package will be in the standard D2PAK-7L footprint. The third package is a half-bridge module that provides an excellent solution for the high power industrial solar and charging station markets. The announcements will detail how these packages support AOS’ comprehensive line of SiC MOSFETs from 10mOhm to 500mOhm and voltages from 650V to 1700V.
    • New Motor Drive Announcement at PCIM: AOS will announce a new range of 60V and 100V drivers for power tools, outdoor garden equipment, and e-mobility applications, including a 100V half bridge, a 100V 3-phase, and a 60V 3-phase. These products all support 100 percent duty cycle operation, and demo boards using AOS motor drivers and MOSFETs will be featured in the AOS booth.
    • Power Supply and Renewable Energy: A significant solution in AOS’ growing High Voltage Super Junction MOSFET portfolio is its industry-leading optimized αMOS5™ 600V to 700V Super Junction MOSFETs that help designers achieve efficiency and density goals while satisfying budget goals. Featuring fast switching, a robust UIS/body diode, and ease of use, these state-of-the-art MOSFETs meet the latest server, telecom rectifier, solar inverter, EV charger, gaming, PC, and universal charging/PD design requirements. The newly released AONA66916, a 100V AlphaSGT™ MOSFET, delivers industry-leading Rthjc-top and Rthjc-bottom thermal resistances. A compact DFN 5×6 double-sided cooling package offers improved thermal designs in demanding telecom, solar, and DC-DC converter applications.
    • Automotive and E-mobility: In AOS’ increasing line of automotive MOSFETs, the new automotive grade 80V (AOTL66810Q) and 100V (AOTL66912Q) MOSFETs in the TOLL package are designed to achieve the highest current capability. The AOS TOLL package utilizes advanced clip technology to achieve a high in-rush current rating and very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages based on standard wire-bonding technology packages. These new automotive-grade MOSFETs help designers meet the power requirements in electric vehicles, battery management systems (BMS), and high-performance inverters (BLDC motors) for e-mobility.
    • Intelligent Power Modules, Mega IPM7: AOS has integrated its latest RC IGBT and high-voltage gate driver into the world’s most compact package design, capable of delivering mega power of up to 100W in motor control applications. The portfolio covers 600V / (1A−3A) in a variety of package options (Mega IPM-7D, IPM7DT, IPM-7E) that are ideal solutions for a broad array of design requirements.
    • Poster Presentation: Jong-Mu Lee, Ph.D. and director of AOS IGBT and Module Product Lines, will present SiC-IPM for Compact and Energy Efficient in the Intelligent Power Modules session on Tuesday, June 11, at 15:30.

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  • Alpha and Omega Semiconductor Announced XSPairFET™ MOSFET for Buck-Boost Converters

    Alpha and Omega Semiconductor Announced XSPairFET™ MOSFET for Buck-Boost Converters

    2 Min Read

    Alpha and Omega Semiconductor Limited announced its AONZ66412 XSPairFET™ MOSFET designed for Buck-Boost converters in USB PD 3.1 Extended Power Range (EPR) applications. The USB PD 3.1 EPR increases the USB-C maximum power up to 240W. AONZ66412 is defined to support the most commonly addressed power range of up to 140W at 28V, with two 40V N-Channel MOSFETs in a half-bridge configuration in a symmetric XSPairFET™ 5mmx6mm package.

    The AONZ66412 can replace two single DFN5x6 MOSFETs, reducing the PCB area and simplifying the layout of the 4-switch buck-boost architecture while enabling a higher efficiency design. These benefits make the AONZ66412 ideal for buck-boost converters in Type-C USB 3.1 EPR applications, including notebook, USB hub, and power bank designs. The AONZ66412 is an extension to the AOS XSPairFET™ lineup that features the latest bottom source packaging technology and lower parasitic inductance for reduced switch node ringing.

    Engineered with integrated high-side and low-side MOSFETs (3.8mOhms maximum on-resistance for each FET) within a DFN5x6 symmetric XSPairFET™ package, the low-side MOSFET source of the AONZ66412 is connected directly to a large paddle on the lead frame. This allows for improved thermals, as this paddle can be directly connected to the ground plane on the PCB. The improved package parasitics make 1MHz operation achievable, allowing inductor size and height to be reduced. AONZ66412 has been tested to achieve 97% efficiency @1MHz in typical USB PD 3.1 EPR conditions of 28V input, 17.6V output, and 8A load conditions.

    “AOS specifically designed the AONZ66412 to meet EPR Type C PD application demands. AONZ66412 will reduce board space and improve power density to achieve the high-efficiency performance goals designers have set for this widely adopted USB-PD Type C application. AOS continues to be a leading innovator of buck-boost architecture solutions,” said Rack Tsai, Marketing Director of MOSFET product line at AOS.

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  • Alpha and Omega Semiconductor Added a 100V MOSFET in DFN 5x6 Package

    Alpha and Omega Semiconductor Added a 100V MOSFET in DFN 5×6 Package

    2 Min Read

    Alpha and Omega Semiconductor Limited (AOS) announced the AONA66916, a 100V MOSFET packaged in the company’s innovatively designed top and bottom side cooling DFN 5 x 6 package. Designers have long trusted AOS power semiconductors as essential components that help them meet a wide variety of high performance application requirements.

    Now, in delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.

    Typically, when using the standard DFN 5×6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS’ new top and bottom cooling DFN 5×6 package is designed to achieve the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction.

    This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5×6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts.

    Another benefit of the AONA66916 is that it utilizes AOS’ 100V AlphaSGT™ technology, providing excellent FOM for balanced performance in hard switching applications. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and has a 175°C junction temperature rating.

    “Cooling the power MOSFET in high power design can be challenging, and AOS has successfully addressed this essential issue with our advanced top exposed package design. It not only enables better thermal transfer from its top side exposed contact to heat sink due to large exposed surface area, our new package delivers a much cooler device that contributes to a more efficient and robust final design,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.

    AONA66916

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  • Alpha and Omega Semiconductor Released Two αMOS5™ 600V FRD SJ MOSFETs

    Alpha and Omega Semiconductor Released Two αMOS5™ 600V FRD SJ MOSFETs

    3 Min Read

    Alpha and Omega Semiconductor Limited announced the release of two αMOS5™ 600V FRD Super Junction MOSFETs. αMOS5™ is AOS’s market and application-proven high voltage MOSFET platform, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications.

    The design of today’s mid-high power switched-mode power supply (SMPS) and solar inverter systems boil down to four major challenges – higher efficiency, higher density, lower system costs, and uncompromised robustness. High Voltage Super Junction MOSFETs are dominant the choice for topologies such as single/interleaved/dual boost/CrCM TP PFCs, LLC, PSFB, multi-level NPC/ANPC and so forth.

    αMOS5™ has been the leading High Voltage Super Junction solution tailored for fast switching, ease-of use and robustness in mission-critical applications. αMOS5™ FRD FETs are engineered with strong intrinsic body diode to handle hard commutation scenarios, when the freewheeling body diode is in reverse recovery due to abnormal operations, such as short-circuit or start-up transients.

    The two products released, the AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F), are 600V FRD FETs with 95mohm and 125mohm maximum Rdson, respectively. In tests conducted by AOS engineers, the body diodes of these two FRD FETs have survived high di/dt, under abnormal system conditions, even at elevated junction temperatures of up to 150°C. Additionally, AOS tests have shown that these devices’ turn off energy (Eoff) are noticeably lower than the competition’s, which contributes to higher efficiency in light or mid-load conditions.

    “We defined our products for traditional power supplies, as well as DC/DC and DC/AC converters of solar inverters and ESS systems, where bi-directional topologies are needed. As energy storage-ready inverters become the trend and high voltage batteries are utilized increasingly in AC-coupled systems, the AOK095A60FD and AOTF125A60FDL will become industry leading solutions for bi-directional DC/DC and inverter/PFC applications that serve a wide range of power supplies, solar PV inverters, and ESS hybrid converters,” said Richard Zhang, Senior Director of Product Line and Global Power Supply Business at AOS.

    Technical Highlights

    • Rugged, fast recovery diode (FRD) with reduced Qrr for demanding use cases
    • Engineered for both hard and soft switching topologies with ultra-low switching loss
    • Strong UIS and SOA capabilities
    • Engineered to prevent self turn-on
    • Suitable for LLC, PSFB, CrCM Totem-Pole, Multi-level NPC and CrCM H-4/Cyclo Inverter applications

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  • Alpha and Omega Semiconductor Released 80V and 100V MOSFETs in Automotive TOLL Package

    Alpha and Omega Semiconductor Released 80V and 100V MOSFETs in Automotive TOLL Package

    2 Min Read

    Alpha and Omega Semiconductor Limited (AOS) announced the release of its state-of-the-art automotive TO-Leadless (TOLL) package for the company’s automotive grade 80V and 100V MOSFETs. AOS’s TOLL package is developed to optimize the company’s power semiconductors as essential components in the evolution of e-mobility such as 2- and 3-wheel and other light vehicles. This new package helps designers meet the ongoing trend to electrify vehicles with the latest battery technology to meet clean energy zero-emission goals.

    These capabilities make AOS 80V and 100V MOSFETs ideally suited for automotive BLDC motor and battery management applications for e-mobility. The AOS automotive TOLL package is designed to achieve the highest current capability using AOS’s innovative approach which utilizes advanced clip technology to achieve a high in-rush current rating.

    In addition, AOS TOLL packaging with clip technology offers a very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages utilizing standard wire-bonding technology. With the combination of low ohmic and high current capability, utilizing AOS TOLL packaging also allows designers to reduce the number of parallel MOSFETs in high current applications. This, in turn, helps to enable higher power density requirements without compromising reliability in applications where robustness and reliability are key design objectives.

    Providing a more compact solution for space-constrained designs, the AOTL66810Q (80V) and AOTL66912Q (100V) have a 30 percent smaller footprint compared to a TO-263 (D2PAK) package. These new devices in TOLL packaging are qualified to AEC-Q101, PPAP capable, and are manufactured in IATF 16949 certified facilities making them ideally suited for demanding application requirements in e-mobility. AOS TOLL devices are also compatible with automated optical inspection (AOI) manufacturing requirements.

    “Using the AOS Automotive TOLL package with clip technology offers significant performance improvements in a robust package. The advanced technologies in our AOTL66810Q and AOTL66912Q MOSFETs will help simplify new designs allowing them to reduce the number of devices in parallel while providing the necessary higher current capability to enable overall system cost savings,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.

    Part NumberVDS (V)VGS (±V)Continuous Drain Current (A)Pulsed Drain Current (A)RDS(ON) Max (mOhms) @10V
    @25°C@100°C@25°C
    AOTL66810Q802044524717801.25
    AOTL66912Q1002037026914801.7

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