ECCE 2024 Tag Archive

  • Navitas Semiconductor Reveals New ‘IntelliWeave’ Control Technique to Power Next-Gen AI Data Centers above 99% Efficiency

    Navitas Semiconductor Reveals New ‘IntelliWeave’ Control Technique to Power Next-Gen AI Data Centers above 99% Efficiency

    2 Min Read

    At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor introduced conference attendees to ‘IntelliWeave’ – an innovative patented new digital control technique for improving next generation AI data center power supply (PSU) efficiency.

    In a world where ever-more energy is needed for the processing of artificial intelligence (AI) and cloud-based applications, minimizing power consumption has become a priority for data center architects and operators. Combining next-generation GaN and SiC semiconductors with new control technique strategies to power conversion plays a key role in achieving this goal.

    IntelliWeave’s novel digital control enables highest system efficiencies with precision current sharing, ultra-fast dynamic response and minimal phase error. A patented dual-loop and dual-feed-forward interleaving control achieves absolute zero voltage switching (ZVS) across the full-load range to enable highest efficiencies.

    The digital control for Critical Conduction Mode (CRM) interleaving Totem Pole Power Factor Control (PFC) enables 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions. The digital control combined with high-power GaNSafe power ICs has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU operating at 99.3% peak efficiency including EMI filter loss.

    Taking place in Phoenix, Arizona from October 20th to 24th, IEEE ECCE 2024 features both industry-driven and application-oriented technical sessions and brings together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion. 

    On October 21st Tao Wei presented “Novel digital control for a GaN-based CrM interleaved TP PFC”.

    Original – Navitas Semiconductor

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  • Cambridge GaN Devices to Highlight GaN Portfolio at ECCE 2024

    Cambridge GaN Devices to Highlight GaN Portfolio at ECCE 2024

    2 Min Read

    Cambridge GaN Devices (CGD) is exhibiting at the prestigious IEEE Energy Conversion Congress and Expo on Booth 319. Now in its 16th year, ECCE 2024 is sponsored by both the IEEE Industrial Application Society (IAS) and IEEE Power Electronics Society (PELS). The event continues to grow, both in attendance and content.

    ECCE 2024 will feature two-page Late Break Research Briefs, Post-Journal paper presentations, and the standard technical papers. It will also offer special sessions on emerging technologies and industry-oriented topics, and of course, tutorials, which have become a staple element of the ECCE technical program.

    Andrea Bricconi | Chief Marketing Officer, CGD

    “It is important for CGD that we spread our message that GaN is the future of power electronics, in terms of energy efficiency, power density and smallest carbon footprint, and that our ICeGaN® GaN power ICs are the most rugged and easiest-to-use devices available. Therefore we are delighted to exhibit for the first time at ECCE.”

    At the event, CGD will show a number of demos that employ ICeGaN, including:

    • 3 kW PFC reference design
    • QORVO motor drive evaluation kit developed in partnership with CGD and utilising ICeGaN
    • Slim 100W adaptor
    • Half-bridge, full-bridge as well as ICeGaN in parallel evaluation boards
    • 300W PFC+LLC
    • Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
    • ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board

    Original – Cambridge GaN Devices

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