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Cambridge GaN Devices revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B – with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions.
Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market.”The proprietary Combo ICeGaN approach uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e.g. 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices.
ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market. ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven track record in traction and EV applications. Similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs have also been proven by CGD, but Combo ICeGaN – which is now detailed in a published IEDM paper – is a far more economical solution. CGD expects to have working demos of Combo ICeGaN at the end of this year.
Prof. FLORIN UDREA | FOUNDER AND CTO, CGD
“Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition). For more details about Combo ICeGaN, visit Booth 2039 at the Georgia World Congress Center | Atlanta, GA | March 16-20, 2025.
Original – Cambridge GaN Devices
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ALLOS Semiconductors and Canadian specialty semiconductor and performance materials supplier 5N Plus Inc. have announced the acquisition of the GaN IP portfolio from 5N Plus’ subsidiary AZUR Space Solar Power.
This strategic acquisition includes the buy-back of the GaN-on-Si technology for high power electronics (HPE) applications, which was originally sold to AZUR in 2020, along with several jointly completed innovations and resulting patent applications. With this acquisition, the global IP portfolio has expanded to over 50 granted patents, with more to come, most of them essential for both GaN-on-Si for optoelectronics and HPE applications. The transaction also includes the return of all recipes and other know-how.
This acquisition strengthens ALLOS’ position in the rapidly evolving areas of micro-LED displays and optical interconnect. ALLOS’ GaN-on-Si epiwafers are crucial for the customers to utilize standard silicon fabs for micro-LED manufacturing.
Additionally, this acquisition provides ALLOS’ with the option to re-enter the GaN-on-Si high power electronics (HPE) market. Power GaN has become a global mass market success and is projected to grow to over two billion USD by 2029. The unique features of ALLOS’ 200 mm and 300 mm technology can significantly benefit in scaling up production while reducing unit costs. In addition to standard silicon fab compatibility, these features include highest crystal quality, best wafer uniformity, and award-winning breakdown voltages for undoped GaN. While ALLOS remains focused on micro-LEDs, the company is now open to collaborations with HPE players.
Original – ALLOS Semiconductors
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Cambridge GaN Devices will demonstrate at APEC that the company’s ICeGaN® GaN ICs can now satisfy a broad range of applications with higher power requirements, such as servers, data centres, inverters, industrial power supplies and, very soon, automotive EVs over100 kW. The company’s new P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency, and a secure supply chain is in place including manufacturing deals with TSMC and ASE, and distribution through Digi-Key.
HENRYK DABROWSKI | SENIOR VICE PRESIDENT OF GLOBAL SALES, CGD
“GaN is now widely accepted as the technology of choice for mobile device chargers and is now set to supersede traditional silicon MOSFETs in higher power applications. The industry is also beginning to realize that GaN may replace SiC in certain high efficiency designs, due to its lower manufacturing cost. At APEC – one of the world’s most important events for the power industry – we are eagerly looking forward to having in-depth discussions with designers of high efficiency power systems and demonstrating the ruggedness, reliability and ease of use of our ICeGaN® GaN IC technology.”
During APEC, CGD will give the following Industry Session and Exhibitor Presentations:
Unlocking the Potential of Multi-level Inverters with Integrated ICeGaN technologies (Session: IS14.7)
As the electric vehicle market develops, there is a continuous drive to look at new and novel approaches to further improve the efficiency of the traction inverter and other electrical subsystems.Multi-level inverters enable the use of much high switching frequencies and break down the total voltage into smaller steps, which in turn allows for improved efficiency and downsizing of other parts of the system. GaN technology optimizes the benefits of multi-level topologies. CGD’s ICeGaN technology brings a higher level of integration, lower cost, best in class robustness and ease of use.
Presenter: Daniel Murphy, Director of Technical Marketing, CGD Date: Wednesday March 19, 2025 Time: 4:30 PM – 4:55 PM ET Location: Level Four, A411
ICeGaN Leads the Industry in GaN Integration
This presentation will demonstrate how ICeGaN technology leads in simplification, cost reduction, robustness, carbon footprint and efficiency of GaN power applications.Presenter: Peter Di Maso, Vice President, Business Development, CGD Date: Wednesday, March 19, 2025 Time: 12:45 PM – 1:15 PM ET Location: A301
On booth 2039, CGD will present demos that highlight the benefits of employing its ICeGaN technology in three application spaces: Motor Drives
- ICeGaN vs discrete GaN circuits comparison in half-bridge (daughter cards) demo board
- High and low power QORVO motor drive evaluation kits utilising ICeGaN and developed in collaboration with CGD
- Half-bridge built using CGD’s ICeGaN ICs in the BHDFN (Bottom Heat-spreader DFN) bottom-side cooled package with wettable flanks for easy inspection
Data Centres
- 3 kW totem-pole PFC evaluation board
- Half-bridge built using CGD’s BHDFN-packaged ICeGaN ICs
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN (Dual Heat-spreader DFN) package which has low thermal resistance (Rth(JC)), and can be operated with bottom-side, top-side and dual-side cooling. This package offers flexibility in design and out-performs the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
- 2.5kW GaN-based CCM totem-pole PFC reference design targetting LED drivers, industrial brick DC/DC and general PSUs with power range of 500W to 1.5kW.
Scalable Power
- New single IC ICeGaN technology platform that delivers over 100kW, enabling CGD to address the $10B+ EV market, currently dominated by SiC, with cost-effective GaN solutions
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
- Parallel evaluation board demoing ICeGaN’s higher power capabilities
- Full-bridge demo showing CGD’s ICeGaN ICs in the DHDFN package
GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“This is an exciting time for our industry as it embraces the disruptive GaN technology. Although this change from silicon has indisputably shown the power density and efficiency benefits of GaN, only CGD is presenting this new technology in an easy-to-use solution, which has been proven to be the most rugged in the industry. With our technology roadmap which details how ICeGaN will be able to address even EV applications over 100kW, we are sure designers will be inspired by the possibilities that ICeGaN has opened up.”
Original – Cambridge GaN Devices
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ROHM has announced that the EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization. Mass production of this power supply unit is set to begin in 2025.
Rapid advancements in IoT-related fields such as AI and AR (Augmented Reality) have led to a surge in global data traffic in recent years. Notably, the power consumption for a single AI-generated response is estimated to be several times higher than that of a standard Internet search, highlighting the need for more efficient AI power supplies. Meanwhile, GaN devices, known for low ON resistance and high-speed switching performance, are gaining attention for their ability to enhance power supply efficiency while reducing the size of peripheral components such as inductors used in power circuits.
Dr. Joe Liu, Technical Fellow, Murata Power Solutions
“We are pleased to have successfully designed AI server power supply units featuring higher efficiency and power density by incorporating ROHM’s GaN HEMTs. The high-speed switching capability, low parasitic capacitance, and zero reverse recovery characteristics of GaN HEMTs help minimize switching losses. This allows for higher operating frequencies in switching converters, reducing the size of magnetic components. ROHM’s GaN HEMTs deliver competitive performance and exceptional reliability, yielding excellent results in the development of Murata Power Solutions’ 5.5kW AI server power supply units. Going forward, we will continue our collaboration with ROHM, a leader in power semiconductors, to improve the efficiency of power supplies and address the social issue of increasing power demand.”
Yuhei Yamaguchi, General Manager, Power Stage Product Development Div., LSI Business Unit, ROHM Co., Ltd.
“We are delighted that ROHM’s EcoGaN™ products have been integrated into AI server power supply units from Murata Power Solutions, a global leader in power supplies. The GaN HEMTs used in this application provide industry-leading switching performance in a high heat dissipation TOLL package, enhancing power density and efficiency in Murata Power Solutions’ power supply units. We look forward to strengthening our partnership with Murata Manufacturing, a company that shares the similar vision of contributing to society through electronics – promoting the miniaturization and efficiency of power supplies to enrich people’s lives.”
Original – ROHM
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ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD., an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.
Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.
ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup – meeting the market demand for even smaller and more efficient high-power applications.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR （WEIHAI） CO., LTD.
“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.
“We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people’s lives.”Original – ROHM
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EPC is set to highlight cutting-edge advancements in AI, robotics, and other high-density power conversion applications at the Applied Power Electronics Conference (APEC) 2025. During the event, held from March 16 to March 20 in Atlanta, GA, EPC will focus on demonstrating how GaN is revolutionizing AI infrastructure, humanoid robotics, industrial and consumer applications in booth 1231.
AI = GaN: Enabling the Next Generation of AI Servers
Artificial intelligence requires ultra-efficient power conversion to sustain increasing computing densities. EPC’s latest GaN solutions for AC/DC server power and 48 V DC-DC GPU power reduce losses, increase power density, improve thermal management, and offer superior efficiency.
Motor Drives: Powering Robotics, Automation, and More
From industrial automation to consumer electronics, GaN-based motor drives offer higher efficiency, smaller size, and improved performance over traditional silicon-based solutions. EPC will showcase live demonstrations of GaN-powered drives in applications such as:
- Power tools – Enhanced battery life and performance with GaN motor drives
- Humanoids & quadrupeds – Next-generation robotics with faster response times and increased power efficiency
- Vacuum cleaners & delivery bots – Smarter, more autonomous systems benefiting from GaN’s high-speed switching and power density
Visit EPC at APEC 2025
- Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is driving innovation across multiple industries. To schedule a meeting during APEC 2025 contact info@epc-co.com
- Exhibition Booth # 1231: Visit EPC’s booth to explore our comprehensive portfolio of GaN-based solutions. See firsthand the superior performance in live demonstrations
- Technical Presentations: Attend our technical sessions to gain insights into the latest trends and advancements in GaN power conversion technology
- Enhance Traction Motor Efficiency using a GaN based Four-Level Flying Capacitors Inverter
Industry Session (IS03.3): March 18 at 9:20 a.m.
Speaker: Marco Palma - Debate Session 1: SiC vs GaN – Which will lead in power conversion?
March 18 at 4:30 p.m.
Panelist: Alex Lidow, Ph.D. - High performance 5 kW, 4-Level totem-pole PFC converter using 200 V GaN FETs for open compute servers
Industry Session (IS12.2): March 19 at 8:55 a.m.
Speaker: Michael de Rooij, Ph.D. - Powerstage GaN Integrated Circuits Operation in Robotic Applications
Industry Session (IS14.4): March 19 at 2:45 p.m.
Speaker: Marco Palma
- Enhance Traction Motor Efficiency using a GaN based Four-Level Flying Capacitors Inverter
At APEC 2025, we are excited to showcase how EPC’s GaN solutions are setting new benchmarks in power conversion and efficiency,
said Nick Cataldo, VP of Sales and Marketing at EPC.Original – Efficient Power Conversion
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Manufacturers of cutting-edge audio equipment constantly seek to enhance sound quality while also meeting the growing demand for compact, lightweight, more integrated, and energy-efficient designs. At the same time, they must ensure seamless connectivity, cost-effectiveness, and user-friendly functionality, making audio product development more complex than ever.
To overcome these challenges, SounDigital has integrated CoolGaN™ transistors from Infineon Technologies AG into its new 1500 W Class D amplifier, featuring an 800 kHz switching frequency and five channels. Infineon’s advanced GaN technology has improved the energy efficiency of the amplifier by five percent and reduced energy loss by 60 percent.
“We are excited to enhance the performance of our audio amplifiers using Infineon’s GaN power semiconductors, enabling us to inspire people and provide entertainment by amplifying music around the world,” said Juliano Anflor, CEO of SounDigital. “GaN transistors significantly enhances our overall system performance with minimized system cost and increased ease of use.”
“GaN technology is transforming the audio amplifier industry, providing unparalleled efficiency and performance,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “Infineon’s leading GaN solutions deliver superior sound quality, higher power density, and reduced energy consumption, enabling SounDigital’s audio systems to reach new levels of fidelity and performance.”
For its 1500 W Class D amplifier, SounDigital selected Infineon’s 100 V normally-off E-mode transistors: IGC033S101 in a PQFN-3×5 package and IGB110S101 in a PQFN-3×3 package. With their low on-resistance, the transistors are ideal for demanding high-current applications, enabling significant improvements in both sound quality and efficiency of SounDigital’s amplifier.
The GaN-based amplifier also delivers high performance while reducing power dissipation by 75 W, allowing for a 50 percent smaller heat sink. Additionally, the overall system size has been reduced by 40 percent without compromising performance. The audio quality has been further improved by the CoolGaN transistors, with total harmonic distortion (THD) reduced by 70 percent, enabling a more precise and detailed sound experience. At the same time, the idle current has been reduced by 40 percent, significantly improving energy efficiency.
Original – Infineon Technologies
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Texas Instruments (TI) announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers. This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation.
The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. TI’s advancements in space-grade power products enable engineers to design satellite power systems for all types of space missions using just one chip supplier.
Satellite systems are growing increasingly complex to meet the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximize electrical power system efficiency. TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.
“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”
For more information, read the technical article, “How you can optimize SWaP for next-generation satellites with electronic power systems.”
Optimizing size, weight and power (SWaP) using GaN technology can:
- Improve electrical system performance.
- Extend mission lifetimes.
- Reduce satellite mass and volume.
- Minimize thermal management overload.
Designers can use the family for applications spanning the entire electrical power system.
- The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels.
- The 60V and 22V versions are intended for power distribution and conversion across the satellite.
TI’s family of space-grade GaN FET gate drivers offers different space-qualified packaging options for the three voltage levels, including:
- Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively.
- Radiation-tolerant Space Enhanced Plastic (SEP) products.
John Dorosa, a TI systems engineer, will present “How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge” on Tuesday, March 18, 2025, at 9:20 a.m. Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.
Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available now on TI.com. Preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP are also available, with the TPS7H6005-SP, TPS7H6015-SP and TPS7H6025-SP available for purchase by June 2025. Additionally, development resources include evaluation modules for all nine devices, as well as reference designs and simulation models.
Original – Texas Instruments
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Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN™ G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1).
“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.
Moreover, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) has successfully closed a $32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.
Transforming Power Electronics with GaN
Gallium nitride-based devices represent a breakthrough in power electronics, offering faster switching speeds, lower energy consumption, and more compact designs than traditional silicon-based solutions. CGD’s proprietary monolithic ICeGaN® technology, which simplifies the implementation of GaN into existing and progressive designs, delivers efficiency levels exceeding 99%, enabling energy savings of up to 50% in a wide range of high-power applications including electric vehicles and data centre power supplies. These innovations have the potential to save millions of tons of CO2 emissions annually, accelerating the global transition to more sustainable energy systems due to the inherent ease-of-use that ICeGaN® technology provides to its customers.Dr. Giorgia Longobardi, CEO and Founder of CGD, said: “This funding round marks a pivotal moment for CGD. It validates our technology and vision to revolutionize the power electronics industry with our efficient GaN solutions and make sustainable power electronics possible. We’re now poised to accelerate our growth and make a significant impact in reducing energy consumption across multiple sectors. We look forward to collaborating with our strategic investor to penetrate the automotive market”.
Market Opportunity and Proven Success
The global GaN power device market is projected to grow at a remarkable CAGR of 41%, reaching $2 billion by 20291. At the same time, ICeGaN® is being seen as a viable alternative to existing solutions using Silicon Carbide (SiC), combining high energy-efficiency, miniaturization, and monolithically integrated smart functionalities. This will enable Cambridge GaN Devices to have access to a high power market estimated to be in excess of $10 billion by 20291. With its cutting-edge technology and market leadership position, CGD is well positioned to capitalize on this rapid market expansion. Having successfully secured industry-leading customers in their pipeline, CGD has consistently demonstrated its ability to deliver reliable and impactful solutions, enabling innovation in the sector.Henryk Dabrowski, SVP of Sales at CGD, said: “I’m thrilled to see this funding helping to deliver on customer deals we’ve already closed for CGD’s latest-generation P2 products. This investment will significantly boost our ability to meet the growing demand for our reliable and easy-to-use GaN solutions.”
Global Expansion and Vision for the Future
With a global team of experts, decades of research, and a commitment to pushing the boundaries of GaN technology, CGD continues to deliver solutions that enhance everyday electronics. As the world advances toward electrification and sustainability, CGD’s leadership in GaN technology offers a pathway to reduce energy consumption, lower costs, and mitigate environmental impact. By enabling efficient, compact, and high-performance power devices, CGD is setting a new standard for sustainable power electronics.The funding will enable the company to expand its operations in Cambridge, North America, Taiwan and Europe, and deliver CGD’s unique value proposition to its growing customer base. This significant investment will fuel CGD’s growth strategy, focusing on the continued delivery of highly efficient GaN products to high-power industrial, data centre, and automotive markets. John Pearson, Chief Investment Officer at Parkwalk Advisors, said: “CGD is at the forefront of technology that can reduce the energy demands of booming industries, like Artificial Intelligence and Electric Mobility. It has enormous global potential and widespread applications which will see CGD continue to innovate and grow. We are proud to have backed CGD since 2019 and are excited to be working with an exceptional team and cohort of other investors to accelerate its global expansion.”
George Mills, Director – Deeptech, Direct & Co-Investments, British Patient Capital, said: “Following years of research, Cambridge GaN Devices have proven the impact of their semiconductor technology. Their GaN devices consume less energy than their silicon-based counterparts, which both reduces costs and has a positive environmental impact. It’s valuable technology that now needs long-term capital to scale.”
Original – Cambridge GaN Devices
