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GaN / LATEST NEWS / SiC / WBG2 Min Read
Navitas Semiconductor announced its participation in the Power Semiconductor User Forum, organized by WEKA Fachmedien on November 22nd -23rd, 2023. The event offers valuable insights into power electronics for developers and technical buyers.
Alfred Hesener, Senior Director of Industrial and Consumer Applications will explore “Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies,” on November 23rd at 1:45 p.m. CET. Mr. Hesener will highlight next-generation solutions that achieve high power densities, cool operation, robust performance using Navitas’ GaNSense single and Half-Bridge power ICs.
Navitas’ GaNFast power ICs integrate GaN power and drive with control, sensing, and protection to enable faster charging, higher power density, greater energy savings and system cost reduction. In addition, each GaN power IC saves over 4 kg CO2 due to higher efficiency and dematerialization. New ‘Gen-3 Fast’ GeneSiC MOSFETs have up to 50% improved performance vs. other SiC devices, and save over 40 kg CO2 per unit vs. legacy silicon IGBTs.
“For industrial power designers, the WEKA forum highlights leading-edge, reliable technology for drives, pumps, chargers and power conversion, using GaN and SiC,” said Mr. Hesener. “Features like loss-less current sensing, programmable dV/dt, 2 kV ESD protection and autonomous sensing and protection are key enablers, and reduce time to market.”
WEKA Fachmedien’s Power Semiconductor User Forum 2023 will be held from November 22nd-23rd at the Novotel Messe Munich, Willy-Brandt-Platz 1, 81829 München, Germany.
Original – Navitas Semiconductor
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GaN / LATEST NEWS / WBG2 Min Read
Transphorm, Inc. and Allegro MicroSystems, Inc. announced a collaboration including Transphorm’s SuperGaN® FETs and Allegro’s AHV85110 Isolated Gate Driver to enable the expansion of GaN power system design for high power applications.
Transphorm’s SuperGaN FETs are designed to work in various topologies and are available in several different packages to support a wide power range while also satisfying diverse end application requirements. SuperGaN FETs are used in multiple commercial products, including higher power systems where they are proven to notably increase reliability, power density, and efficiency.
Allegro’s self-powered, single-channel isolated gate driver IC is optimized for driving GaN FETs in multiple applications and circuits. The AHV85110 is proven to enhance driver efficiency by as much as 50% compared to competitive gate drivers. This unique solution greatly simplifies the system design, reduces noise by 10x and common mode capacitance by 15 times compared to other solutions in the market.
“Allegro’s AHV85110 High Voltage Gate Driver provides a highly compact and efficient power stage implementation that helps to achieve an approximate 30 percent footprint reduction with the least number of external components and bias supply requirements around Transphorm’s power devices,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm.
“Combined with SuperGaN’s highest reliability and superior dynamic switching performance over competing technologies, the end result is a more efficient, more robust solution with increased power density in critical applications such as server, data centers, renewables and electric vehicles.”
“We are excited about working with Transphorm on a collaboration that further supports Allegro’s focus towards helping customers optimize GaN-based system development and design,” said Vijay Mangtani, Vice President and General Manager of High Voltage Power, Allegro MicroSystems. “We are looking forward to the opportunity to combine our high voltage isolated gate driver AHV85110 with Transphorm’s SuperGaN FET to enable higher power density, higher efficiency, and higher power output in smaller form factors and provide value to both our and Transphorm’s customers.”
Those interested in testing the collaborative solution can do so via Allegro’s APEK85110KNH-06-T evaluation board. The board incorporates both the AHV85110 designed to work in various applications along with Transphorm’s recently announced TOLL packageavailable in three devices with on-resistances of 35, 50, and 72 milliohms.
Original – Transphorm
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Navitas Semiconductor announced another GaNFast win at Samsung, this time a new 25W charger for the flagship Galaxy S23 smartphone. Gallium nitride (GaN) is a next-gen power-semi technology that is replacing legacy silicon chips in markets from mobile and consumer to data center, solar and EV.
The high-spec Galaxy S23 features a Dynamic AMOLED 2X, 120Hz screen with 1750 nits peak contrast, stretching it’s 1080 x 2340 pixels across 90.1 cm2 of Corning Gorilla Glass. With a Qualcomm Snapdragon 8 Gen 2 chip, up to 512GB / 8GB RAM of storage and triple cameras up to 50 MP, the S23 excels in mobile communication performance.
For power, the S23 features a 3900 mAh Li-Ion battery, and with the GaNFast 25W charger (model EP-T2510) with USB PD 3.0 interface, reaches 50% charge in only 30 minutes, and while in sleep mode, consumes only 5 mW of power. The PD 3.0 specification means that the new charger can power a range of devices from Galaxy Buds2 audio to Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Navitas’ GaNFast technology is used in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz. GaNFast leading-edge, high-frequency performance shrinks the charger by more than 30%, and the Navitas device is fully qualified to Samsung’s stringent qualification requirements, with excellent delivery performance, quality and reliability.
“As pioneers in mobile fast charging, Navitas continues to lead the next-gen market, with all 10 of the top 10 mobile OEMs in production with GaNFast products,” said David Carroll, Sr. VP Worldwide Sales. “From 25 W to 20 MW, our expanding range of leading-edge GaN and SiC products cover everything from mobile and consumer to EVs, solar and industrial applications.”
Original – Navitas Semiconductor
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GaN / LATEST NEWS / SiC / WBG2 Min Read
“The 31st International Optoelectronics Exposition (OPTO Taiwan)”, organized by Photonics Industry & Technology Development Association, is taking place in Taipei Nangang Exhibition Hall 1 from October 25th to 27th, for a three-day technological extravaganza. As a leading company in semiconductor technology, GlobalWafers unveils its latest achievements in compound semiconductors.
At this year’s exposition, GlobalWafers features 8”N type SiC crystal growth technology, Thinning technology of 6”and 8”SiC wafers, and high-value niche products in the GaN epitaxy field, demonstrating its technical prowess honed over many years in the compound semiconductor industry. SiC crystal growth presents challenges due to the need for growth in extremely high-temperature sealed environments, with factors like hot zone design and crucible materials in crystal growth furnace adding the complexity to equipment and operations.
GlobalWafers independently designs and develops 8”SiC-specific Physical Vapor Transport Method Grower (PVT) to further reduce crystal growth costs while achieving higher material quality control. Through outstanding technical control and production efficiency, as well as continuous research and development, GlobalWafers overcomes the technical challenges of SiC crystal growth, successfully moving forward to 8 inches, providing customers with high-quality, superior-performance SiC materials.
The high hardness and brittleness of SiC make subsequent wafering process extremely challenging. Leveraging its edge in wafer processing, GlobalWafers has successfully developed SiC ultra-thin thinning technology, showcasing 6” 90µm and 8”350µm ultra-thin polished SiC wafers at the exhibition. Ultra-thin SiC wafers offer advantages in lightweighting, heat dissipation, thermal conductivity, high-frequency operation, component miniaturization, and material costs, making them an ideal choice for high-performance semiconductor devices.
GlobalWafers’ SiC wafers include 4”~ 6” semi-insulating wafers and 6”~ 8”conductive SiC wafers, offering a comprehensive range of products to cater for diverse customer needs and expand into various fields of application.
Heteroepitaxy of GaN poses various technical challenges, such as lattice mismatch, stress, and defects. GlobalWafers focuses on research and development, launching a full range of GaN heteroepitaxy products, including silicon, SiC and sapphire substrates. A variety of substrate selections can meet different requirements and expand terminal applications in an all-round way.
With its wealth of semiconductor substrate technology and years of industry experience, GlobalWafers has been able to give full play to our strengths and provide more advanced and high-efficiency solutions for the rapidly growing electric vehicle market.
Original – GlobalWafers
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GaN / LATEST NEWS / WBG2 Min Read
GaN Systems announced that it will demonstrate the latest breakthroughs of GaN for sustainable and cost-effective power designs at the 2023 China Power Electronics and Energy Conversion Congress and the 26th China Power Supply Society Annual Conference & Exhibition (CPEEC & CPSSC 2023), taking place on November 10-13, 2023, in Guangzhou, China.
Finals of the Annual “GaN Systems Cup” Power Electronics Application Design Competition will kick off concurrently. GaN Systems, as the primary sponsor for nine consecutive years, will participate in the opening ceremony and recognize the winners at the award ceremony.
While power efficiency is at the forefront of global policymaking, advancements in power electronics have gained importance, and talent remains the cornerstone of these advancements. The “GaN Systems Cup” Competition provides a podium for aspiring young engineers to challenge themselves and unlock the full potential of power electronics with GaN power semiconductors.
This year, out of the 68 teams from 46 colleges and universities that participated, 24 qualify for finals. The finalists will present prototype designs for a three-phase inverter using GaN Systems’ power transistors. The panel of judges comprised of experts from the industry and academia will evaluate these prototype designs based on performance in efficiency and power density.
Explore New Opportunities for Power Electronics at the CPEEC & CPSSC 2023
GaN Systems will showcase the latest reference designs for automotive, data center, and consumer industries at Booth 3-026. Its representatives will also be available to discuss the step-function performance boost and industry-leading figures of merit of recently released Gen4 power platform.
Original – GaN Systems