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Transphorm, Inc. announced that its PCIM 2024 showcase will underscore its ability to outperform competitive wide bandgap technologies in higher power systems. For example, Transphorm’s normally-off d-mode SuperGaN®platform delivers higher electron mobility resulting in lower crossover losses versus Silicon Carbide—making it more a cost-effective, higher performing solution for various electric vehicle, datacenter/AI, infrastructure, renewable energy, and other broad industrial applications. To learn more, visit Transphorm during PCIM in Hall 7, Stall 108 during June 11 to 13, 2024.
Transphorm SuperGaN FETs are in production in a wide range of customer products crossing the power spectrum from low 45 W power adapters to higher power 7.5 kW PSUs. Many of these customer products are the first publicly recognized GaN-based systems of their kind and uniquely demonstrate advantages enabled only by the SuperGaN platform.
Examples include the previously mentioned liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain applications; a 2.7 kW server CRPS with > 82 W/in3 power density (highest in any GaN power system available today); and 2.2 kW and 3 kW rack-mount 1U uninterruptible power supplies (UPSes). These design wins illustrate Transphorm’s ability to drive GaN into the various application markets composing an estimated GaN TAM of $8 billion by 2028.
In addition to real-world customer products, Transphorm continues to lead in technological achievements having recently demonstrated a 5 microsecond short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
On-site demonstrations will include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform competitive technologies and enable cross-industry innovations during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the Future of Power
Speaker: Philip Zuk, Senior Vice President, Business Development and Marketing
Date: June 12
Time: 2:20 – 3:20 p.m. CEST
Location: Hall 7, Stall 743Original – Transphorm
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GaN / LATEST NEWS / WBG3 Min Read
Transphorm, Inc. and the global leader in adapter USB Power Delivery (PD) Controller Integrated Circuits (IC) Weltrend Semiconductor Inc. announced availability of two new GaN System-in-Packages (SiPs). When combined with Weltrend’s flagship GaN SiP announced last year, the new devices establish the first SiP product family based on Transphorm’s SuperGaN® platform.
The new SiPs—WT7162RHUG24B and WT7162RHUG24C—integrate Weltrend’s high frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm’s 150 mΩ and 480 mΩ SuperGaN FETs respectively. Like their 240 mΩ predecessor (WT7162RHUG24A), the devices pair with USB PD or programmable power adapter controllers to provide a total adapter solution.
Notably, they also offer several innovative features including the UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control among others that allow customers to design high quality power supplies faster and with fewer components using the simplest design approach.
“When we launched our first GaN SiP last year, it was an important milestone in our company’s evolution. It demonstrated a new GTM strategy for the AC-to-DC power market,” said Wayne Lo, Vice President of Marketing, Weltrend. “Today’s news confirms we’re continuing to serve that space with a wider selection of devices designed to support a wider assortment of product power levels. A total packaged solution with Transphorm’s SuperGaN platform delivers design simplicity with unparalleled performance for devices now ranging from low 30-watt USB-C PD power adapters through to nearly 200-watt chargers, a unique Transphorm GaN capability.”
End product manufacturers seek ways to develop new adapters with a reduced bill-of-materials (BOM) that offer versatility, fast charging, and higher power outputs. Additionally, in many cases they seek to deliver “one-size-fits-all” chargers with multiple ports and/or multiple types of connections. All of this in smaller, lighter weight form factor.
Some key advantages of Transphorm’s normally-off d-mode SuperGaN platform include best-in-class robustness (+/- 20 V gate margin with a 4 V noise immunity) and reliability (< 0.05 FIT) with the ability to increase power density by 50% over silicon. Weltrend’s elegant SiP designs harness those advantages along with its own innovative technologies to create a near plug-and-play solution that speeds design while reducing form factor size.
“SiPs are an important device option when considering the needs of adapter and charger manufacturers,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm. “These systems require effective power conversion that, while simple to use with integrated functionality, also minimize learning curves to ensure quick design in. The first device released validated the performance and versatility of a SuperGaN SiP. The new devices announced today validate both our companies’ deepening commitment to arming customers with choice.”
Key Specifications WT7162RHUG24A WT7162RHUG24B (new) WT7162RHUG24C (new) Rds(on) 240 mΩ 150 mΩ 480 mΩ Vds min 650 V Power Efficiency > 93% Power Density 26 w/in3 Max Frequency 180 kHz Wide Output
Voltage OperationUSB-C PD 3.0
PPS 3.3V~21VPackage 24-pin 8×8 QFN Key Features Feature Advantage Adjustable GaN FET gate slew rate control Balances out efficiency and EMI compliance External VDD linear regulator circuit not required
(700 V ultra HV start-up current pulled directly from AC Line voltage)Reduces component count Reduced package inductance Maximizes chip performance Fits in a standard 8×8 QFN FF Allows for low profile/small system footprint Original – Transphorm
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GaN / LATEST NEWS / WBG2 Min Read
Navitas Semiconductor announced that Virtual Forest, one of India’s leading electronics design companies specializing in motor control and human interface technologies for consumer appliances, fluid movement and mobility, has adopted its GaNFast™ power integrated circuits (IC) technology for a zero-emission, powerful 3 hp (2,250W) solar-powered irrigation pump.
For many farmers worldwide, irrigating remote crops requires powerful pumps to lift water from rivers and streams up to field-level, with the majority powered by polluting and noisy diesel generators or expensive, lossy long-distance electrical cables. The Virtual Forest solar pump with maximum power point tracking (MPPT) operates in conjunction with solar panel and energy storage to provide robust, energy-independent and pollution-free performance at the point of use.
The 3 hp (2,250W) pump is remotely accessed via quad-band IoT with low power consumption. It can raise over 50 gallons-per-minute of water to a height of over 90 feet, enough to water 3 acres of farmland, and help to produce 10 tonnes of wheat. Further, the IoT enabled solar pump ensures optimal water usage through intelligent analytics, therefore minimizing ground water utilization.
Navitas GaNSense™ half-bridge power ICs monolithically by integrating two GaN power FETs with GaN drivers, level-shifters, protection features and high-efficiency loss-less current sensing. High-efficiency NV6269 half-bridge ICs, in easy-to-use 8×10 mm QFN packages are used in a 3-phase motor inverter, with 3x-5x energy savings vs legacy silicon IGBTs.
“The $450 million solar-pump market in India is expected to reach $1.5 Bn by 2026, calling for a solar revolution on Indian fields,” said Virtual Forest’s CEO, Omer Basith, adding “Reliable, off-grid systems are critical to overcome food insecurity and achieve energy efficiency. Leveraging Navitas’ high-power, efficient GaNSense™ half-bridge, we seek to deliver a robust solution to the market. We are nurturing our dream to drive gigatons of reduction in carbon emissions, thereby making the world a greener place to live in. Hence, our name — Virtual Forest.”
“The design team at Virtual Forest adopted the GaNSense half-bridges very quickly, for a fast time-to-market,” said Alessandro Squeri, Navitas’ Senior Sales Director. “With GaNSense, ‘easy-to-use feature, Virtual Forest comes into the partnership with high efficiency, low component count and a robust design for tough environments.”
Original – Navitas Semiconductor
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GaN / LATEST NEWS / WBG2 Min Read
Chicony Power Technology, a worldwide leading manufacturer of power supplies and a pioneer in power electronics, has announced the winners of its Annual Partner Awards, honoring Infineon Technologies AG as its 2023 “GaN Strategic Partner of the Year”.
Infineon has been recognized by Chicony Power as its top partner for gallium nitride (GaN)-based power supplies, including notebook adapters, as well as ICT applications in gaming, storage and servers. This acknowledgment is the result of Infineon’s high standards for product selection, application expertise, high reliability and cost-effectiveness.
GaN stands out as one of the most crucial technologies which are essential for improving the efficiency of power supplies and reducing their product size. Pooling Infineon’s leading GaN expertise and Chicony Power’s remarkable capabilities in power supply system design, the win-win collaboration has helped push the boundaries of innovation and further strengthened both companies’ leading positions in energy-efficient power solutions. As of today, the GaN adoption rate in Chicony Power’s high-watt adapters has reached 20 percent, and this rate is rapidly increasing.
“Unrivalled R&D resources, a comprehensive application understanding and a large number of customer projects let Infineon continuously drive its roadmap for becoming a leading GaN Powerhouse,” said Adam White, Division President Power & Sensor Systems at Infineon Technologies. “The Strategic Partner of the Year award from Chicony Power is a great honor for us. We see this as part of our common mission to drive decarbonization and digitalization together.”
“We’re pleased to honor Infineon, which has played a pivotal role in driving customer success throughout 2023, as our GaN Strategic Partner of the Year,” said Peter Tseng, President of Chicony Power Technology. “Our Vision is to be a global pioneer in the implementation of new technology that enhances power supply efficiency, reduces the carbon footprint of power supplies and helps create a greener world. We would like our Annual Partner Awards to encourage Infineon and all other partners to maintain the momentum in jointly promoting GaN technology in the market alongside Chicony Power, making the power industry greener and cleaner.”
Original – Infineon Technologies
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LATEST NEWS2 Min Read
Navitas Semiconductor announced its participation in the upcoming Power Electronics International conference on April 16th– 17th 2024, in Brussels, Belgium.
Grid reliability is a key factor in a $1.3 trillion power semiconductor opportunity as Navitas’ technologies accelerate the transition from fossil fuels to renewable energies. Navitas will introduce the latest GaNFast™ and GeneSiC™ products to the European audience, including new Gen-3 Fast SiC for high-power and higher-speed performance, plus GaNSafe™ – the world’s most protected GaN power devices.
Navitas will present the following on April 17th:
- “3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage,” Dr. Ranbir Singh, EVP GeneSiC
Synopsis: The grid supplies energy from generators and delivers it to customers via transmission and distribution (T&D) networks. In the U.S., the use of electricity storage to support and optimize T&D has been limited due to high storage costs and limited design and operational experience. Recent improvements in storage and power technologies, however, coupled with changes in the marketplace, herald an era of expanding opportunity for electricity storage. SiC inverters will revolutionize electricity delivery, renewable energy integration, and energy storage. It is well-recognized that silicon-based semiconductors have inherent limitations that reduce their suitability for utility-scale applications.
- “Bi-directional circuits open up new opportunities in off-grid applications,” Alfred Hesener, Senior Director Industrial and Consumer Applications
Synopsis: Bi-directional circuits are critical to effectively smooth the supply/demand variation in renewable energy applications. In the past, they were expensive to make and complex to implement in power electronics applications. Wide bandgap GaN power ICs with integrated drive and advanced circuit functions deliver easy-to-use, reliable, high power density, and functionality for power factor correction circuits, solar inverters, and solid-state circuit breakers.
Original – Navitas Semiconductor
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EPC Space announced a distribution agreement with Avnet, a global distributor of electronic components and services. Avnet will be a global distributor for EPC Space’s line of radiation hardened (Rad Hard) GaN power devices qualified for satellite and high-reliability applications.
EPC Space offers a family of Rad Hard power GaN devices that includes discrete transistors, Integrated Circuits (ICs), and Modules that offer significant performance advantages over competitive silicon-based space level power devices. EPC Space’s GaN technology devices are smaller, have lower resistance, and have superior switching performance compared to silicon-based components and solutions.
Critical spaceborne applications that benefit from the performance improvements that EPC Space devices offer include satellite’s DC-DC converters, reaction and momentum wheels, solar array drive assembly, micro-pumps for propulsion systems, and more.
“Partnering with Avnet, a global leader in distribution solutions, allows EPC Space to offer timely and reliable service to customers seeking high reliability GaN power solutions,” said Bel Lazar, EPC Space’s CEO.
Original – EPC Space