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Semiconductor manufacturer Nexperia announced plans to invest USD 200 million (appx. 184 million Euros) to develop the next generation of wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN), and to establish production infrastructure at the Hamburg site. At the same time, wafer fab capacity for silicon (Si) diodes and transistors will be increased. The investments are jointly announced with Hamburg’s Minister for Economic Affairs, Dr. Melanie Leonhard, on the occasion of the 100-year anniversary of the production site.
To meet the growing long-term demand for efficient power semiconductors, all three technologies (SiC, GaN, and Si) will be developed and produced in Germany starting in June 2024. This means Nexperia is supporting key technologies in the fields of electrification and digitalization. SiC and GaN semiconductors enable power-hungry applications, such as data centers, to operate with exceptional efficiency and are core building blocks for renewable energy applications and electromobility. These WBG technologies have great potential and are increasingly important for achieving decarbonization goals.
“This investment strengthens our position as a leading supplier of energy-efficient semiconductors and enables us to utilize available electrical energy more responsibly,” comments Achim Kempe, COO and managing director at Nexperia Germany. “In the future, our Hamburg fab will cover the complete range of WBG semiconductors while still being the largest factory for small signal diodes and transistors. We remain committed to our strategy of producing high-quality, cost-efficient semiconductors for standard applications and power-intensive applications, while addressing one of the greatest challenges of our generation: meeting the growing demand for energy and while reducing the environmental footprint.”
First production lines for high-voltage GaN D-Mode transistors and SiC diodes started in June 2024. The next milestone will be modern and cost-efficient 200 mm production lines for SiC MOSFETs and GaN HEMTs. These will be established at the Hamburg factory over the next two years. At the same time, the investment will help to further automate the existing infrastructure at the Hamburg site and expand silicon production capacity by systematically converting to 200 mm wafers. Following the expansion of the clean room areas, new R&D laboratories are being built to continue to ensure a seamless transition from research to production in the future.
In addition to advancing technology, the semiconductor supplier expects the initiative to stimulate local economic development. The investments make an important contribution to securing and creating jobs and enhancing the European Union’s semiconductor self-sufficiency. Nexperia works closely with universities and research institutes to benefit from each other’s expertise and promote highly qualified employee training. Nexperia relies on a robust research and development ecosystem in Hamburg and throughout Europe. Development partnerships and co-operations, e.g. in the field of GaN technology as part of the Industrial Affiliation Program (IIAP) of the nanoelectronics research center imec, play a crucial role. These and other collaborations ensure continuous innovation and technological excellence in Nexperia’s products.
“The planned investment enables us to bring WBG chip design and production to Hamburg. However, SiC and GaN are by no means new territory for Nexperia. GaN FETs have been part of our portfolio since 2019, and in 2023 we expanded our range of products to include SiC diodes and SiC MOSFETs, the latter in collaboration with Mitsubishi Electric. Nexperia is one of the few suppliers to offer a comprehensive range of semiconductor technologies, including Si, SiC, and GaN in both e-mode and d-mode. This means, we offer our customers a one-stop shop for all their semiconductor needs”, explains Stefan Tilger, CFO and managing director at Nexperia Germany.
The investment is yet another milestone in the 100-year history of Nexperia’s production site in Hamburg-Lokstedt. Since the foundation of Valvo Radioröhrenfabrik in 1924, the site has continuously developed and today supplies around a quarter of the global demand for small signal diodes and transistors. Since its spin-off from NXP in 2017, Nexperia has invested substantial sums in the Hamburg site, increased the workforce from 950 to around 1,600 and brought the technological infrastructure up to the state-of-the-art. This continued expenditure underlines the company’s commitment to remaining at the forefront of the industry and providing innovative solutions to its customers worldwide.
Original – Nexperia
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Infineon Technologies AG introduced the new CoolGaN™ Transistor 700 V G4 product family. The devices are highly efficient for power conversion in the voltage range up to 700 V. In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20 percent better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions. The combination of electrical characteristics and packaging ensures maximum performance in many applications such as consumer chargers and notebook adapters, data center power supplies, renewable energy inverters, and battery storage.
The product series comprises 13 devices with a voltage rating of 700 V and on-resistance range from 20 mΩ to 315 mΩ. The increased granularity in device specification, combined with a wide range of industry standard package options including PDFN, TOLL and TOLT allow R DS resistance and packages to be selected according to application requirements. As a result, both electrical and thermal system performance can be optimized and implemented in the most cost-effective solution.
The devices are characterized by a fast turn-on and turn-off speed and minimal switching losses. The on-resistance range enables power systems from 20 W to 25,000 W. In addition, the 700 V E-mode with the industry’s highest transient voltage of 850 V increases the reliability of the overall system as it offers greater robustness against anomalies in the user environment such as voltage peaks.
The CoolGaN Transistor 700 V G4 products in TOLL, PDFN 5×6 and 8×8 packages are available now, more variety in R DS(on) as well as the TOLT package will follow later this year.
Original – Infineon Technologies
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Navitas Semiconductor announced that its GaNFast power ICs have been selected to lead Lenovo’s latest GaN technology chargers; Xiaoxin 105 W GaN charger, and the Legion C 170 W GaN charger, respectively designed for daily travel and gaming power, bringing consumers a brand new fast charging experience.
The Xiaoxin 105 W GaN charger is designed for daily travel. It outputs 105 W of power and is equipped with 3 ports (2C1A) supporting multiple protocols; easily achieving the charging needs of various devices simultaneously. At only 206 g, the 105 W fast-charger is 41% lighter than a typical 100 W computer adapter and takes only 34 minutes to charge the Xiaoxin 16 Pro to 50%. The Navitas NV6138 GaNFast power IC with GaNSense™ technology is at the heart of the high-frequency flyback topology design, providing a stable, durable, and efficient charging experience.
The Legion C170 W GaN charger is designed specifically for hardcore gamers. It delivers 170 W of continuous power through a single port to meet the high-power demands of gaming devices. At only 245 grams, it’s 78% lighter than Legion Y9000P’s original inbox charger and can charge up to 2 times faster than the Legion C140 W Charger. The Navitas NV6136 GaNFast power IC with GaNSense technology is used in the PFC stage, featuring loss-less current sensing and 6 times faster short-circuit protection than competing solutions, delivering cooler operation, superior efficiency, reliability, and power density.
Lenovo’s long-term collaboration with Navitas has brought a series of groundbreaking fast chargers to the market and played a significant role in raising market awareness on showcasing the benefits of GaN technology. At the Lenovo YOGA CC65 dual-port GaN charger launch event in 2021, Navitas’ 6-inch GaN wafer and GaNFast power ICs were publicly showcased for the first time, unveiling the mysteries of this leading technology to consumers.
In terms of gaming products, Navitas collaborated with Lenovo to create a 90 W charger for the Lenovo Legion Pro Gaming Phone and a 135 W, C135 W GaN charger for the Legion 5 and 5 Pro Gen 7 laptops. For lightweight travel, Lenovo developed a series of compact, lightweight powerful GaN chargers using Navitas technology, including the revolutionary compact Thinkplus ‘lipstick’ and the ultra-thin Thinkbook ‘biscuit’ charger.
Lenovo and Navitas are not only partners in power technology but also pioneers in sustainability. Lenovo Group is verified by the Science Based Targets initiative (SBTi) for net zero targets and Navitas is the world’s first power semiconductor company to achieve CarbonNeutral® certification. Navitas’ advanced GaN technology enables Lenovo to continuously create smaller, lighter chargers with higher power density, significantly reducing the number of passive and magnetic components inside the charger, achieving CO2 reduction in production through “dematerialization”. The increased efficiency reduces power loss during use, thus further lowering carbon emissions in the product lifecycle.
“With the support of Navitas GaNFast power ICs, we have successfully introduced two new Xiaoxin and Legion GaN chargers to the market, enabling a lightweight and powerful charging experience for daily travel and gaming performance,” said Elon Chen, Product Manager of Consumer Business for Lenovo Group China. “Moreover, the successful application of Navitas’ GaNFast technology continuously reduces the size and weight of chargers, highly increasing efficiency, bringing convenience to consumers, while contributing to carbon reduction.”
“Powerland is very pleased to collaborate with Navitas again to create two high-performance and lightweight GaN chargers for Lenovo,” said Dr. Wang Chuanyun, VP of R&D for Powerland Group. “Powerland is dedicated to pushing the envelope of technology to build leading power products for our clients. Efficient, reliable, and easy-to-use GaNFast power ICs are crucial to realize that.”
“Navitas is very honored to enter Lenovo’s supply chain twice in a short period, providing high-efficiency and stable GaNFast fast charging power into two important Lenovo products,” said Charles Zha, VP and GM of Navitas China. “By working closely with Powerland, our highly integrated GaNFast technology has enabled Lenovo to continuously achieve leading-edge results in size, performance, and reliability of chargers. With innovative laptops like AI PCs on the rise, Navitas predicts a surge in demand for powerful GaNFast charging solutions. Navitas is on a mission to push the limits of gallium nitride technology, empowering global partners like Lenovo to slash energy usage and emissions in charger and adapter production. Together, we will speed towards a greener, more sustainable planet!”
Original – Navitas Semiconductor
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EPC Space announced the introduction of two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.
The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints.
EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Part Number Drain to Source Voltage (VDS) Drain to Source Resistance (RDS(on)) Single-Pulse Drain Current (IDM) Package Size (mm) Total Dose (TID) Heavy Ion Single Event Effects (SEE) EPC7001BSH 40 11 mΩ 120 5.7 x 3.9 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown EPC7002ASH 40 28 mΩ 40 3.4 x 3.4 1 Mrad SEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Original – EPC Space
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Cambridge GaN Devices has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies. New ICeGaN™ P2 series ICs feature RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The explosive growth of AI is leading to a significant increase in energy consumption, prompting data centre systems designers to prioritise the use of GaN for high-power, efficient power solutions. This new family of Power GaN ICs is a stepping stone for CGD to support our customers and partners on achieving and exceeding 100 kW/rack power density in Data Centres, required by most recent TDP (Thermal Design Power) trends for High-density computing. On the other hand, developers of motor control inverters are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN Series P2 ICs outperform discrete e-Mode GaN and other incumbent technologies.
The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications 6 with ease. The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.
New P2 ICeGaN GaN power ICs are sampling now. The P2 series includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, rated at 27 A and 60 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.
Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies , and a 3 kW totem-pole power factor correction demo board.
The new P2 series ICeGaN GaN power ICs and demo boards were unveiled publicly at the PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
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Texas Instruments introduced the industry’s first 650V three-phase GaN IPM for 250W motor drive applications. The new GaN IPM addresses many of the design and performance compromises engineers typically face when designing major home appliances and heating, ventilation and air-conditioning (HVAC) systems.
The DRV7308 GaN IPM enables more than 99% inverter efficiency, optimized acoustic performance, reduced solution size and lower system costs. It is on display at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM) Conference, held June 11-13 in Nuremberg, Germany.
“Designers of high-voltage home appliances and HVAC systems are striving to meet higher energy-efficiency standards to support environmental sustainability goals around the world,” said Nicole Navinsky, Motor Drives business unit manager at TI. “They are also addressing consumer demand for systems that are reliable, quiet and compact. With TI’s new GaN IPM, engineers can design motor driver systems that deliver all of these expectations and operates at peak efficiency.”
Improve system efficiency and reliability with TI GaN
Worldwide efficiency standards for appliances and HVAC systems such as SEER, MEPS, Energy Star and Top Runner are becoming increasingly stringent. The DRV7308 helps engineers meet these standards, leveraging GaN technology to deliver more than 99% efficiency and improve thermal performance, with 50% reduced power losses compared to existing solutions.
In addition, the DRV7308 achieves industry-low dead time and low propagation delay, both less than 200ns, enabling higher pulse-width modulation (PWM) switching frequencies that reduce audible noise and system vibration. These advantages plus the higher power efficiency and integrated features of the DRV7308 also reduce motor heating, which can improve reliability and extend the lifetime of the system.
To learn more about the benefits of GaN technology, read the white paper, “How three-phase integrated GaN technology maximizes motor-drive performance.”
Advanced integration and high power density reduce solution size and costs
Supporting the trend of more compact home appliances, the DRV7308 helps engineers develop smaller motor drive systems. Enabled by GaN technology, the new IPM delivers high power density in a 12mm-by-12mm package, making it the industry’s smallest IPM for 150W to 250W motor-drive applications.
Because of its high efficiency, the DRV7308 eliminates the need for an external heatsink, resulting in motor drive inverter printed circuit board (PCB) size reduction of up to 55% compared to competing IPM solutions. The integration of a current sense amplifier, protection features and inverter stage further reduces solution size and cost.
To learn about designing more efficient, compact motor systems, see the GaN IPM page on TI.com.
This high-efficiency, high-voltage GaN IPM is the latest example of TI innovations to help solve engineering challenges and transform motor designs.
TI’s reliable high-voltage technology at PCIM 2024
Visitors to PCIM can see new products and solutions from TI that are enabling the transition to a more sustainable future with reliable high-voltage technology in Hall 7, Booth 652. In addition to the DRV7308 GaN IPM, TI highlights at PCIM include:
- Next-generation electric vehicle (EV) propulsion system: TI is demonstrating a new 800V, 750kW SiC-based scalable traction inverter system for EV six-phase motors, in collaboration with EMPEL Systems. The demonstration features high power density and efficiency using TI’s high-performance isolated gate drivers, isolated DC/DC power modules and Arm® Cortex®-R MCUs.
- TI’s manager of high-voltage power systems applications, Sheng-Yang Yu, will speak on June 11 in the Markt & Technik panel discussion: “Will SiC ultimately Hold its Own against GaN?”
- TI’s manager of renewable energy systems, Harald Parzhuber, will speak on June 12 in Bodo’s Power Systems panel discussion: “GaN Wide Bandgap Design, the Future of Power.”
Original – Texas Instruments
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Cambridge GaN Devices is partnering with Qorvo® to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications. CGD aims to speed the use of GaN power ICs in BLDC and PMSM applications, resulting in higher power, highly efficient, compact and reliable systems. Qorvo is building an EVK for its PAC5556A motor/control IC that is powered by CGD’s ICeGaN™ (IC-enhanced GaN) technology.
GIORGIA LONGOBARDI | CEO, CGD
“Because ICeGaN – unlike other GaN implementations from other companies – integrates the interface circuitry but not the controller together with the GaN HEMT, it is simple to combine with highly integrated motor controller and drive ICs such as Qorvo’s PAC5556A 600 V High Performance BLDC / PMSM Motor Controller and Driver. We are delighted to partner with Qorvo to enable motor controller and driver applications to enjoy the benefits of GaN power.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide bandgap semiconductors such as GaN and SiC are being actively considered in various motor control applications for the power density and efficiency benefits they bring. CGD’s ICeGaN technology offers ease of use and reliability, two crucial factors for motor control and drive designers. We are excited to see the reaction of design engineers when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”GaN brings a variety of benefits, primarily lower losses, which results in higher efficiency, leading to increased power availability and less heat. This reduces the need for complex, bulky, and costly thermal management solutions, resulting in smaller, more powerful systems that have a longer life. GaN also delivers higher torque at low speeds and, therefore, more accurate control. Also, GaN allows high-speed switching, which can reduce audible noise, which is especially valued for domestic items such as ceiling fans, heat pumps, and refrigerators.
In addition to being easy to use, ICeGaN offers several other significant benefits over other GaN devices. The gate drive voltage of ICeGaN is compatible with IGBTs. Because ICeGaN integrates the Miller clamp within the GaN IC, a negative Turn-Off voltage is not required, and low-cost current drivers can be used. Finally, ICeGaN includes a useful current sense function, simplifying circuit design and reducing BOM.
The reference design is available today, and EVK RD5556GaN will be available for purchase in Q324. It will also be shown on CGD’s booth Hall 7 643 at the PCIM exhibition in Nuremberg, Germany, 11-13 June. Qorvo will also exhibit at PCIM, on booth Hall 7 406.
Original – Cambridge GaN Devices
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Vincotech introduced a GaN-based power module which provides an effective solution for highly efficient power conversion in isolated DC/DC converters or DC/AC inverter stages. It offers a 2-in-1 solution, and can be utilized either as a 10mOhm H-Bridge or 5mOhm half-bridge.
The module features E-mode GaN HEMTs chip technology, promoting high efficiency and power density, and is available in an industry-standard package with low stray loop inductance. It is compatible with external gate drives, offering engineers high design flexibility.
Main benefits
- Highest design flexibility with external gate driver, enabling slew rate control for low EMC
- Low voltage overshoots due to integrated snubber capacitors
- High power density and small footprint for soft switching above 500kHz
- Kelvin source pin and low inductive gate loop for clean switching behavior
Applications
- DC fast charger
- Solar inverter
- UPS
Original – Vincotech
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Infineon Technologies AG announced two new CoolGaN™ product technologies, CoolGaN bidirectional switch (BDS) and CoolGaN Smart Sense. CoolGaN BDS provides exceptional soft- and hard-switching behavior, with bidirectional switches available at 40 V, 650 V and 850 V. Target Applications of this family include mobile device USB ports, battery management systems, inverters, and rectifiers.
The CoolGaN Smart Sense products feature lossless current sensing, simplifying design and further reducing power losses, as well as transistor switch functions integrated into one package. They are ideal for usage in consumer USB-C chargers and adapters.
The CoolGaN BDS high voltage will be available at 650 V and 850 V and feature a true normally-off monolithic bi-directional switch with four modes of operation. Based on the gate injection transistor (GIT) technology, the devices have two separate gates with substrate terminal and independent isolated control. They utilize the same drift region to block voltages in both directions with outstanding performance under repetitive short-circuit conditions.
Applications can benefit by using one BDS instead of four conventional transistors, resulting in higher efficiency, density, and reliability. Furthermore, significant cost savings are achieved. The devices optimize performance in the replacement of back-to-back switches in single-phase H4 PFC and HERIC inverters and three-phase Vienna rectifiers. Additional implementations include single-stage AC power conversion in AC/DC or DC/AC topologies.
The CoolGaN BDS 40 V is a normally-off, monolithic bi-directional switch based on Infineon’s in-house Schottky Gate GaN technology. It can block voltages in both directions, and through a single-gate and common-source design, it is optimized to replace back-to-back MOSFETs used as disconnect switches in battery-powered consumer products. The first 40 V CoolGaN BDS product has a 6 mΩ R DS(on), with a range of products to follow. Benefits of using 40 V GaN BDS vs. back-to-back Si FETs include 50 – 75 percent PCB area savings and a reduction of power losses by more than 50 percent, all at a lower cost.
The CoolGaN Smart Sense products feature 2 kV electrostatic discharge withstand and can connect to controller current sense for peak current control and overcurrent protection. The current sense response time is ~200 ns, which is equal or less than common controller blanking time for ultimate compatibility.
Implementing the devices results in increased efficiency and cost savings. At a higher R DSs(on) of e.g. 350 mΩ, the CoolGaN Smart Sense products offer similar efficiency and thermal performance at lower cost compared to traditional 150mΩ GaN transistors. Moreover, the devices are footprint compatible to Infineon’s transistor-only CoolGaN package, eliminating the need for layout rework and PCB respin, and further facilitating design with Infineon’s GaN devices.
Engineering samples of the CoolGaN BDS 40 V are available now for 6 mΩ and will follow in Q3 2024 for 4 mΩ and 9 mΩ. Samples of the CoolGaN BDS 650 V will be available in Q4 2024, and 850 V will follow early 2025. CoolGaN Smart Sense samples will be available in August 2024. Further information is available here: https://www.infineon.com/cms/en/product/promopages/GaN-innovations/
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection. Variants of the well-proven DFN style, both packages are extremely rugged and reliable.
Developed for CGD, the DHDFN-9-1 (Dual Heat-spreader DFN) is a thin, dual-side cooled package with a small, 10×10 mm footprint and wettable flanks to simplify optical inspection. It offers low thermal resistance (Rth(JC), and can be operated with bottom-side, top-side and dual-side cooling, offering flexibility in design and out-performing the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
The DHDFN-9-1 package has been designed with dual-gate pinout to facilitate optimal PCB layout and simple paralleling, enabling customers to address applications up to 6 kW with ease. The BHDFN-9-1 (Bottom Heat-spreader DFN) is a bottom-side cooled package, also with wettable flanks for easy inspection. Thermal resistance is 0.28 K/W, matching or exceeding other leading devices. Measuring 10×10 mm, the BHDFN is smaller than the commonly-used TOLL package yet shares a similar footprint, hence a common layout with TOLL-packaged GaN power ICs is possible for ease of use and evaluation.
Nare Gabrielyan | Product Marketing Manager, CGD
“These new packages are part of our strategy to enable customers to use our ICeGaN GaN power ICs at higher power levels. Servers, data centres, inverters/motor drives, micro-inverters and other industrial applications are all beginning to enjoy the power density and efficiency benefits that GaN brings, but they are also more demanding. Therefore, it is essential for such applications that devices are also rugged and reliable, and easy to design in. These attributes are inherent in ICeGaN, and are supported and extended by the new packages.”
Improving thermal resistance performance has several benefits. First, more power output is available at the same RDS(on) . Devices also run at cooler temperatures for the same power, so less heatsinking is required, resulting in reduced system costs. Lower operating temperatures also lead to higher reliability and longer lifetimes. Finally, if cost is the constraint for the application, designers can use a lower cost part with a higher RDS(on) and still achieve the required power output.
The new packages will be shown for the first time publicly at the upcoming PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
