ICSCRM Tag Archive

  • Axcelis Technologies to Sponsor ICSCRM 2024

    Axcelis Technologies to Sponsor ICSCRM 2024

    1 Min Read

    Axcelis Technologies, Inc. will be participating in the International Conference on Silicon Carbide and Related Materials (ICSCRM 2024) taking place September 29 – October 4, 2024, at the Raleigh Convention Center in North Carolina. At the event, Axcelis’ management will be available for one-on-one meetings.

    President and CEO of Axcelis, Dr. Russell Low: “We’re excited to participate in ICSCRM 2024, one of the most important technology forums in the power market.  Axcelis’ Purion™ Power Series is the technology leader in this market, due to its enabling and highly differentiated features and process control. Ion implant is one of the most critical steps in the manufacturing of Silicon Carbide devices, a market which is estimated by Yole to grow at a 25% CAGR from 2023 – 2029.”

    Original – Axcelis Technologies

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  • Navitas Takes Center Stage at ICSCRM 2023

    Navitas Takes Center Stage at ICSCRM 2023

    2 Min Read

    Navitas Semiconductor announced participation at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, to be held in Sorrento, Italy.

    The ICSCRM conference fosters collaboration and knowledge sharing among the brightest minds in the field. The conference has a rich history dating back to its inaugural meeting in 1987, evolving into a premier global forum for in-depth technical discussions on all aspects of SiC and related materials.

    GeneSiC™ power devices, optimized for high-power, high-voltage, and high-reliability SiC applications, address critical markets including electric vehicles, solar energy, energy storage, industrial applications, data centers, and consumer electronics. With an unmatched voltage range spanning from 650 V to 6.5 kV, GeneSiC MOSFETs and Schottky MPS™ diodes have been at the forefront of SiC technology advancement, offering performance and efficiency that pave the way for a more electrified and sustainable future.

    Navitas Semiconductor will present two paper sessions at ICSCRM 2023:             

    • “New Generation SiC MPS Diodes with Low Schottky Barrier Height”
    • “650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92 mΩ-cm²”

    Additionally, Navitas’ SVP of SiC Technology & Operations, Dr. Sid Sundaresan, will be chairing the session on Thursday, September 21st. The session, titled “Devices 4: Short circuit, avalanche and reliability,” will focus on crucial topics in the field of SiC technology.

    “Navitas’ presence at ICSCRM 2023 is a testament to the company’s unparalleled expertise in SiC technology and its commitment to driving innovation in the industry,” said Dr. Ranbir Singh, Navitas EVP for the GeneSiC business line. “As a pioneer in the field, we continue to extend the boundaries of SiC technology, revolutionizing power semiconductors with cutting-edge GeneSiC™ technology.”

    Original – Navitas Semiconductor

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