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Vincotech announced the release of flow E3BP, an advancement of the company’s widely adopted flow 2 and flow E3 housing. Engineered to meet the increasingly challenging requirements for next-gen systems, the flow E3BP is the next step up the evolutionary ladder in power module technology across applications.
Designed to boost thermal performance and maximize power density, this advanced housing is the go-to option for high-power systems and next-generation applications. Featuring a specially treated surface, its convex baseplate provides a superior thermal contact to better disperse heat and handle more power with a smaller footprint.
The module’s CTI600 housing material holds up well to higher system voltages. Its isolation walls increase creepage and clearance distances. Pre-applied thermal interface material is optionally available, as are Press-fit pins. Rolling efficiency, reliability, and innovation into one exceptionally useful housing, the new flow E3BP meets demand for faster time to market, higher power ratings, and greater power density. An excellent fit for many different applications, it marks another stride towards a more sustainable future.
Developed with the increasingly challenging demands of renewable energy systems in mind, the flow E3BP is a remarkably efficient power module. Among others, it enables customers to design 350+ kW utility string PV inverters with just a single housing per phase, cutting 30% of the cost for a dual-module solution. It also serves to reduce the heatsink area by as much as 34% compared to flow E3, thereby increasing power density to 51%.
Chosen for its low inductivity, the new flow E3BP figures prominently in solar and ESS inverters for the utility and commercial segments. Today’s flow E3BP housing meets tomorrow’s 2000 V systems’ high voltage requirements, and the company aims to extend this product portfolio to address further applications such as motion control, industrial drives, and EV charging stations.
Determined to enable customers to bring their ideas to life, Vincotech continues to develop its range of power module housings, which now encompasses 24 options rated from less than 10 kW up to MW. The flow 2, flow S3, and flow E3 housings see wide use in solar and ESS applications. The latest addition to the line, the leading-edge flow E3BP, supports beyond 350 kW and pushes the envelope for PV and ESS solutions.
Original – Vincotech
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Mitsubishi Electric Corporation announced that it will begin shipping samples of two new S1-Series High Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both rated at 1.7kV, for large industrial equipment such as railcars and DC power transmitters from December 26. Thanks to proprietary Insulated Gate Bipolar Transistor (IGBT) devices and insulation structures, the new modules offer excellent reliability and low power loss and thermal resistance, which are expected to increase the reliability and efficiency of inverters in large industrial equipment.
Mitsubishi Electric’s 1.7kV HVIGBT modules, first released in 1997 and highly regarded for their excellent performance and high reliability, have been widely adopted for inverters in power systems.
The new S1-Series modules incorporate Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC) diode, which increases the Reverse Recovery Safe Operating Area (RRSOA) by 2.2 times compared to previous models for improved inverter reliability. In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.Furthermore, Mitsubishi Electric’s proprietary insulation structure increases the insulation voltage resistance to 6.0kVrms, 1.5 times that of previous products, resulting in more flexible insulation designs for compatibility with a wide range of inverter types.
Original – Mitsubishi Electric
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Power components are evolving to meet the increasing demands for higher efficiency, smaller size and greater performance in power electronic systems. To provide system designers with a wide range of power solutions, Microchip Technology announced its portfolio of IGBT 7 devices offered in different packages, multiple topologies, and current and voltage ranges.
Featuring increased power capability, lower power losses and compact device sizes, this new portfolio is designed to meet high-growth market segments such as sustainability, E-Mobility and data centers. These high-performance IGBT 7 devices are key building blocks for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA).
Designers can select a suitable power solution based on their requirements. The IGBT 7 devices are offered in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages. Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices are available with voltages ranging from 1200V to 1700V and current ranging from 50A to 900A.
“The versatile IGBT 7 portfolio combines ease of use and cost efficiency with higher power density and reliability, offering our customers maximum flexibility. These products are designed for general industrial applications as well as specialized aerospace and defense applications,” said Leon Gross, corporate vice president of Microchip’s discrete product group. “Additionally, our power solutions can be integrated with Microchip’s broad range of FPGAs, microcontrollers (MCUs), microprocessors (MPUs), dsPiC® Digital Signal Controllers (DSCs) and analog devices to provide a comprehensive system solution from one supplier.”
The lower on-state IGBT voltage (Vce), improved antiparallel diode (lower Vf) and increased current capability can enable lower power losses, higher power density and higher system efficiency. The lower-inductance packages, combined with the higher overload capability at Tvj −175°C, make these devices excellent options for creating rugged and high-reliability aviation and defense applications—such as propulsion, actuation and power distribution—at a lower system cost.
For motor control applications where enhanced controllability of dv/dt is important, the IGBT 7 devices are designed to offer freewheeling softness for efficient, smooth and optimized driving of switches. These high-performance devices also aim to improve system reliability, reduce EMI and minimize voltage spikes.
Original – Microchip Technology
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ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading low loss characteristics with high short-circuit resistance. This makes the devices ideal for vehicle electric compressors and HV heaters as well as industrial inverters.
The current lineup includes RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR – in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants – SG84xxWN – with plans to further expand the lineup in the future.
The increasing use of higher voltages in automotive systems and industrial equipment has led to a growing demand for power devices capable of handling high voltages in applications such as vehicle electric compressors, HV heaters, and inverters for industrial equipment.
At the same time, there is a strong push for high efficiency power devices to improve energy conservation, simplified cooling mechanisms, and smaller form factors for a decarbonized society. Automotive electrical components must also comply with automotive reliability standards, while power devices for inverter and heater circuits are required to provide current interruption capabilities during short circuits, necessitating high short-circuit tolerance.
In response, ROHM redesigned the device structure and adopted an appropriate package to develop new 4th Generation IGBTs suitable for high voltage by delivering industry-low loss characteristics with superior short-circuit tolerance.
These devices achieve an industry-leading short-circuit withstand time of 10µs (Tj=25°C) together with low switching and conduction losses while maintaining a high withstand voltage of 1200V and meeting automotive standards by reviewing the device structure, including the peripheral design. At the same time, the new TO-247-4L package products, which feature 4 terminals, can accommodate an effective voltage of 1100V in a ‘Pollution Degree 2 environment’ by ensuring adequate creepage distance between pins. This enables support for higher voltage applications than conventional products.
Implementing creepage distance measures on the device side alleviates the design burden for manufacturers. On top, the TO-247-4L package achieves high-speed switching by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products – contributing to higher efficiency in drive applications.
ROHM will continue to expand its lineup of high-performance IGBTs that contribute to greater miniaturization and high efficiency drive in automotive and industrial equipment applications.
Original – ROHM
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBGSTMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs
November 7, 2024
2 Min ReadSTMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture.
Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.
The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.
The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.
The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross conduction.
The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.
Original – STMicroelectronics
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Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum.
Consisting of an AlGaAs LED optically coupled to an integrated circuit with a power output stage, the optocouplers are intended for solar inverters and microinverters; AC and brushless DC industrial motor control inverters; and inverter stages for AC/DC conversion in UPS. The devices are ideally suited for directly driving IGBTs with ratings up to 1200 V / 100 A.
The high operating temperature of the VOFD341A and VOFD343A provides a higher temperature safety margin for more compact designs, while their high peak output current allows for faster switching by eliminating the need for an additional driver stage. The devices’ low propagation delay minimizes switching losses, while facilitating more precise PWM regulation.
The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages, while still maintaining enough voltage safety margin. The RoHS-compliant devices offer high noise immunity of 50 kV/µs, which prevents fail functions in fast switching power stages.
Original – Vishay Intertechnology
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For next-generation power electronics, BASF has developed a polyphthalamide (PPA) that is especially suited for manufacturing housings of IGBT (insulated-gate bipolar transistor) semiconductors. Ultramid® Advanced N3U41 G6 addresses the growing demand for high-performance, reliable electronic components for e.g., electric vehicles, high-speed trains, smart manufacturing and the generation of renewable energy.
Semikron Danfoss, a global technology leader in power electronics, now uses the BASF PPA as housing in its Semitrans 10 IGBT which can be installed in inverters of photovoltaic and wind energy systems. Due to its outstanding chemical resistance and dimensional stability, the Ultramid® Advanced N grade enhances the robustness, long-term performance and reliability of these IGBTs, thus meeting growing needs for energy saving, higher power density and increased efficiency. IGBTs enable efficient switching and control of electrical circuits in power electronics.
“IGBTs are a key element of modern electronics, particularly in the renewable energy sector,” explains Jörn Grossmann from research and predevelopment at Semikron Danfoss. “IGBTs must operate at higher temperatures while maintaining long-term stability and performance. The Semitrans 10 has set a new benchmark for performance and efficiency benefiting from the unique properties of BASF’s PPA. We chose this material because of its extraordinary electrical isolation even in harsh environments and because of its excellent robustness against short-term temperature peaks in the assembly process.” The combination of high-performance material and smart design allows for faster switching speeds, lower conduction losses, and improved thermal management, thus addressing key needs in power electronics.
In today’s IGBTs, BASF’s proven Ultradur® (PBT: polybutylene terephthalate) is widely used. The new PPA is designed to meet the stringent requirements of next-generation IGBTs for rapidly evolving power electronics. They demand materials that can withstand higher temperatures, provide sustained electrical insulation, and maintain dimensional stability under challenging environmental conditions like humidity, dust and dirt.
The laser-sensitive Ultramid® Advanced N3U41G6 with non-halogenated flame retardant combines high thermal stability with low water uptake and excellent electrical properties. It is characterized by a high CTI (Comparative Tracking Index) of 600 (acc. to IEC 60112): This supports miniaturization of IGBTs by lower creepage and better insulation than materials so far used for power switches. The UL-certified grade shows an excellent electrical RTI (Relative Temperature Index) value of 150°C.
“BASF’s PPA compound is globally available and ready for sampling”, says Jochen Seubert, senior application expert for power electronics at BASF. “Backed by our customer-focused technical support in part development, we expect this innovative material to significantly contribute to the advancement of power electronics, supporting the global transition to renewable energies.” For manufacturing of IGBTs, the BASF PPA is compatible with potting materials used to assemble the semi-conductors with metal pins and clamps after injection molding.
BASF’s polyphthalamide portfolio is based on the six polymers Ultramid® Advanced N (PA9T), Ultramid® Advanced T1000 (PA6T/6I), Ultramid® Advanced T2000 (PA6T/66), Ultramid® T KR (PA6T/6), Ultramid® T6000 (PA66/6T) and Ultramid® T7000 (PA/PPA). They open the door to the next generation of lightweight, high-performance plastic components in many different sectors including the automotive industry, electronics and electric devices, mechanical engineering and consumer goods.
The PPA portfolio is available globally and complemented by BASF’s Ultrasim® simulation tool and extensive experience in application development. It includes more than 50 compounded grades for injection molding and extrusion, products with or without flame retardants. The compounds are available in different colors, from colorless to laser-markable black, with short-glass, long-glass or mineral fiber reinforcement, and with various heat stabilizers.
Original – BASF
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MCC released 1200V Auto-Grade Trench Field-Stop IGBT engineered for demanding automotive applications. MIS80N120NT1YHE3 delivers reliable switching where other components fall short, minimizing losses while maintaining thermal performance.
Its super TO-220 package design boasts a junction-to-case thermal resistance of only 0.17K/W for maximum heat dissipation in high-voltage scenarios. But the superior thermal performance doesn’t stop there. With a low saturated VCE of just 2.25V and operating junction temperature of up to 150°C, this IGBT enhances energy efficiency and boosts overall performance.
Advanced trench field-stop technology provides an additional layer of optimized switching efficiency, adding to its reliability. Rigorously tested to achieve AEC-Q101 qualification, this IGBT is equipped with the robustness required in extreme automotive environments.
From PTC heaters and solid-state relays and electric drive systems, MCC’s new 1200V IGBT is the obvious solution for engineers looking to improve system integrity and efficiency in diverse applications.
Features & Benefits:
- AEC-Q101 Qualified: Meets stringent automotive quality standards for enhanced reliability.
- 1200V High Breakdown Voltage: Capable of handling high-voltage operations, making it ideal for automotive applications.
- Low Saturated VCE: Achieves 2.25V (typ.) at higher temperatures, minimizing energy loss and enhancing efficiency.
- Low Switching Losses: Enable efficient operation, contributing to improved overall system performance.
- Excellent Thermal Performance: Housed in a super TO-220 package (TO-273AA) with a junction-to-case thermal resistance of 0.17K/W, ensuring effective heat dissipation.
- High Thermal Stability: Maintains performance across a wide temperature range for unwavering operation in varying scenarios.
- Powerful Short-Circuit Protection: Integrated features safeguard against damage in fault conditions, enhancing safety and dependability.
- Versatile Application Compatibility: Suitable for a wide range of automotive applications, including PTC heaters, solid-state relays, electric drive systems, renewable energy systems, and industrial motor drives.
Original – Micro Commercial Components
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Maspower Semiconductor introduced the MSG120T65HQC1, a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-power applications. With its exceptional performance characteristics and robust design, the MSG120T65HQC1 sets a new benchmark in the power electronics industry.
The MSG120T65HQC1 boasts a low collector-emitter saturation voltage (VCE(sat)) of 1.8V at 120A, ensuring high-speed switching and superior system efficiency. Its tight parameter distribution ensures consistent performance across different operating conditions, making it ideal for demanding applications.
With a continuous collector current rating of 180A at 25°C and 120A at 100°C, the MSG120T65HQC1 is well-suited for high-current applications. Its pulsed collector current capability of up to 360A and diode maximum forward current of 480A further enhance its versatility and reliability.
The device features soft current turn-off waveforms, reducing electromagnetic interference (EMI) and improving overall system performance. This makes it an excellent choice for noise-sensitive applications.
Operating and storage temperatures ranging from -55°C to +175°C ensure reliable performance in extreme environments. The maximum lead temperature for soldering purposes is 300°C, facilitating easy and safe installation.
The MSG120T65HQC1 exhibits low switching losses, with turn-on loss (Eon) of up to 1.2mJ and turn-off loss (Eoff) of up to 2mJ. This translates into improved system efficiency and reduced heat generation.
The MSG120T65HQC1 is available in the TO-247Plus package, which offers excellent thermal performance and mechanical stability. Its low thermal resistance values ensure efficient heat dissipation, maintaining the device’s temperature within safe operating limits.
Applications:
The MSG120T65HQC1 is ideal for a wide range of applications, including but not limited to:
- Traction Inverters for HEV/EVs: Its high-current handling capability and low VCE(sat) make it an excellent choice for electric and hybrid electric vehicle (HEV/EV) traction inverters.
- Auxiliary DC/AC Converters and UPS Systems: The device’s high-efficiency and reliable switching characteristics make it perfect for auxiliary converters and uninterruptible power supplies (UPS).
- Motor Drivers: Its robust design and superior performance parameters make the MSG120T65HQC1 an ideal solution for motor drives, enhancing efficiency and reducing operating costs.
- Other Soft-Switching Applications: The device’s soft-switching capabilities make it suitable for a variety of noise-sensitive and high-performance applications.
With its superior performance, high efficiency, and robust design, the MSG120T65HQC1 from Maspower Semiconductor is a game-changer in the power electronics industry. Ideal for a wide range of high-power and demanding applications, this IGBT solution is poised to revolutionize the way we think about power conversion.
Original – Maspower Semiconductor
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North Carolina State University Professor B. Jayant Baliga has been awarded the 2024 Millennium Technology Prize for his work on the invention, development and commercialization of insulated gate bipolar transistors (IGBTs), which play a critical role in energy efficiency for technologies worldwide. The Millennium Technology Prize, which comes with a €1 million award, is the most prestigious international award focused on recognizing technological innovation.
The IGBT is an energy-saving semiconductor switch that controls the flow of power from an electrical energy source to any application that needs energy. The IGBT improves energy efficiency by more than 40 percent in an array of products, from cars and refrigerators to light bulbs, and is a critical component enabling modern compact cardiac defibrillators.
The IGBT has reduced global carbon dioxide emissions by over 82 gigatons (180 trillion pounds) over the past 30 years. This is equivalent to offsetting carbon dioxide emissions from all human activity for three years, based on average emissions of the past 30 years.
“The IGBT has already had and continues to have a major impact on supporting sustainability with improved living standards worldwide, while mitigating environmental impact,” says Minna Palmroth, chair of the Board of Technology Academy Finland, the foundation which awards the Millennium Technology Prize. “The main solution to tackle global warming is electrification and moving to renewable energy. The IGBT is the key enabling technology in addressing these issues.”
“It is very exciting to have been selected for this great honor,” says Baliga, who is the Progress Energy Distinguished University Emeritus Professor of Electrical and Computer Engineering at NC State.
“I am particularly happy that the Millennium Technology Prize will bring attention to my innovation, as the IGBT is an embedded technology that is hidden from the eyes of society. It has enabled a vast array of products that have improved the comfort, convenience and health of billions of people around the world while reducing carbon dioxide emissions to mitigate global warming. Informing the public of this impactful innovation will illustrate the betterment of humanity by modern technology.”
Baliga’s portfolio of 123 U.S. patents includes many other inventions that have also been commercialized. The split-gate power MOSFET is widely manufactured for use in laptops, PCs and servers. And his silicon carbide inventions – including the JBS rectifier and shielded channel power MOSFET – are used in a variety of state-of-the-art electrical power management technologies.
Baliga – who Forbes has called “the man with the world’s largest negative carbon footprint” – continues to work on technological challenges related to energy efficiency. He and his collaborators are currently working on new inventions to improve efficiencies related to solar power generation, electric vehicles and power delivery for AI servers.
The Millennium Technology Prize will be presented to Professor Bantval Jayant Baliga in Finland on Oct. 30 in an award ceremony that also celebrates the 20th anniversary of the prize. The prize will be presented by its patron, the president of Finland.
The €1 million Millennium Technology Prize is the preeminent award focused on technological innovations for a better life. This includes work that improves human well-being, biodiversity and wider sustainability. Overseen by the Technology Academy Finland, it was first awarded in 2004, and its patron is the President of Finland. Winners are selected by a distinguished international panel of experts from academia and industry. Innovations must be backed up by rigorous academic and scientific research and fulfill several criteria, including promoting sustainable development and biodiversity, having generated applications with commercial viability, and creating accessible socio-economic value.
Past winning innovations range from DNA sequencing that helped to develop COVID-19 vaccines, to ethical stem-cell research and versatile, affordable smart technology. Visit the Millennium Prize website for more information.
Original – North Carolina State University
