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Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives. The new IM12BxxxC1 series is based on the new TRENCHSTOP IGBT7 1200 V and rapid diode EmCon 7 technology. Thanks to the latest micro-pattern trench design, it offers exceptional control and performance.
This results in significant loss reduction, increased efficiency, and higher power density. The portfolio includes three new products in variants ranging from 10 A to 20 A for power ratings of up to 4.0 kW: IM12B10CC1, IM12B15CC1 and IM12B20EC1.
The IM12BxxxC1 series is packaged in a DIP 36x23D housing. It integrates various power and control components to increase reliability, optimize PCB size and reduce system costs. This makes it the smallest package for 1200 V IPMs with the highest power density and best performance in its class. The IM12BxxxC1 series is particularly suitable for low-power drives in applications such as motors, pumps, fans, heat pumps and outdoor fans for heating, ventilation, and air conditioning.
The new IPM series offers an isolated dual-in-line molded housing for excellent thermal performance and electrical isolation. It also meets the EMI and overload protection requirements of demanding designs. In addition to the protection features, the IPM is equipped with an independent UL-certified temperature thermistor.
The CIPOS™ Maxi integrates a rugged 6-channel SOI gate driver to provide built-in dead time to prevent damage from transients. It features under-voltage lockout at all channels and over-current shutdown. With its multi-function pin, this IPM allows for high design flexibility for various purposes. The low side emitter pins can be accessed for all phase current monitoring making the device easy to control.
Original – Infineon Technologies
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DCDC converters are essential in any electric or hybrid vehicle to connect the high-voltage battery to the low-voltage auxiliary circuits. This includes 12 V power headlights, interior lights, wiper and window motors, fans, and at 48 V, pumps, steering drives, lighting systems, electrical heaters, and air conditioning compressors. In addition, the DCDC converter is important for developing more affordable and energy-efficient vehicles with an increasing number of low voltage functions.
According to TechInsights, the global automotive DC-DC converter market size was valued at USD 4 billion in 2023 and is projected to grow to USD 11 billion by 2030, exhibiting a CAGR of 15 percent during the forecast period. Gallium nitride (GaN) in particular plays a crucial role here, as it can be used to improve the power density in DCDC converters and on-board chargers (OBC).
For this reason, Vitesco Technologies, a leading supplier of modern drive technologies and electrification solutions, has selected GaN to improve the power efficiency of its Gen5+ GaN Air DCDC converter. The CoolGaN™ Transistors 650 V from Infineon Technologies AG significantly improve the overall system performance while minimizing system cost and increasing ease of use. As a result, Vitesco created a new generation of DCDC converters that set new standards in power density (efficiency of over 96%) and sustainability for power grids, power supplies, and OBCs.
The advantages of GaN-based transistors in high-frequency switching applications are considerable, but even more important is the high switching speed, which has been increased from 100 kHz to over 250 kHz. This enables very low switching losses, even in hard-switched half-bridges, with minimized thermal and overall system losses.
In addition, Infineon’s CoolGaN Transistors feature high turn-on and turn-off speeds and are housed in a top-cooled TOLT package. They are air-cooled, eliminating the need for liquid cooling and thereby reducing overall system costs. The 650 V devices also improve power efficiency and density, enabling an output of 800 V. In addition, they feature an ON-resistance (R DS(on)) of 50 mΩ, a transient drain-to-source voltage of 850 V, an I DS,max of 30 A, and an I DSmax,pulse of 60 A.
“We are delighted to see industry leaders like Vitesco Technologies using our GaN devices and innovating with their applications,” said Johannes Schoiswohl, Senior Vice President & General Manager, GaN Systems Business Line Head at Infineon. “The ultimate value of GaN is demonstrated when it changes paradigms, as in this example of moving from a liquid-cooled system to an air-cooled system.”
With GaN Transistors, Vitesco Technologies was able to design its Gen5+ GaN Air DCDC converters with passive cooling, which reduces the system’s overall cost. The GaN devices also allow for simplified converter design and mechanical integration. As a result, the DCDC converters can be flexibly positioned in the vehicle, reducing the workload for manufacturers.
The use of GaN also allows the power of the converters to be scaled up to 3.6 kW and the power density to be increased to over 4.2 kW/l. The Gen5+ GaN Air DCDC converters offer an efficiency of over 96 percent and improved thermal behavior compared to the Gen5 Liquid-Cooled converters. They provide a two-phase output of 248 A at 14.5 V continuous.
The phases can be combined to achieve the maximum output power. Still, it is also possible to switch off one phase under partial load conditions and interleave the switching frequency between the two phases. In addition, by switching the input of two phases in series, the converters based on the CoolGaN power transistors 650 V can be used to implement 800 V architectures without exceeding the maximum blocking voltage of the device. The converters also feature an isolated half-bridge topology consisting of a GaN-based half-bridge, a fully isolated transformer, and an active rectifier unit for each phase.
Original – Infineon Technologies
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As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production.
The highly efficient 200-millimeter SiC power fab will strengthen Infineon’s role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionized high-power applications because they switch electricity even more efficiently and enable even smaller designs.
SiC semiconductors increase efficiency in electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers. 900 high-value jobs will be created already in the first phase. The second phase, with an investment of up to five billion euros, will create the world’s largest and most efficient 200-millimeter SiC power fab. Overall, up to 4.000 jobs will be created with the project.
“New generations of power semiconductors based on innovative technology such as silicon carbide are an absolute prerequisite to achieving decarbonization and climate protection. Our technology increases the energy efficiency of ubiquitous applications such as electric cars, solar and wind power systems and AI data centers. We are therefore investing in the largest and most efficient high-tech SiC production facility in Malaysia, backed by strong customer commitments,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “Since the demand for semiconductors will constantly rise, the investment in Kulim is highly attractive to our customers, who are backing it with their prepayments. It also increases the resilience of the supply chain for critical components needed for the green transition.”
“Infineon’s remarkable project reinforces Malaysia’s position as a rising major global semiconductor hub” says Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim. “This major investment, which will locate the world’s largest and most competitive SiC power fab on our shores, will create jobs and opportunities, as well as attract suppliers, universities and top talent. Moreover, it will support Malaysia’s efforts to protect our climate by boosting electrification and increasing the efficiency of many applications, including electric cars and renewable energy. Thus, technology made in Malaysia will become a central part of global decarbonization efforts in the future.”
“Infineon’s deeply rooted presence in Kulim is a testament to the region’s potential as a hub for high-tech industries,” says Kedah Chief Minister YAB Muhammad Sanusi Md Nor. “This investment will not only create high-value job opportunities for the local community, it will also catalyze economic growth in the region. We are committed to continue providing top business conditions in Kedah and supporting Infineon’s efforts to establish a leading semiconductor facility in Kulim, which will have a positive ripple effect on the entire ecosystem.”
Infineon has secured design wins with a total value of approximately five billion euros and has received approximately one billion euros in prepayments from existing and new customers for the ongoing expansion of the Kulim 3 fab. Notably, these design wins include six OEMs in the automotive sector as well as customers in the renewable energy and industrial segments.
Kulim 3 will be closely connected to the Infineon site in Villach, Austria, Infineon’s global competence center for power semiconductors. Infineon already increased capacity for SiC and GaN power semiconductors in Villach in 2023. As “One Virtual Fab” for wide-bandgap technologies, both manufacturing sites now share technologies and processes which allow for fast ramping and smooth and highly efficient operation. The project also offers a high grade of resilience and flexibility, which will ultimately benefit Infineon’s customers.
The expansion will benefit from the excellent economies of scale already achieved for 200-millimeter manufacturing in Kulim. It will complement Infineon’s leading position in silicon, based on 300-millimeter manufacturing in Villach and Dresden. Thus, Infineon is strengthening its technological leadership across the entire spectrum of power semiconductors, in silicon as well as SiC and GaN.
In addition, the investment in wide-bandgap capacity in Kulim strengthens the local ecosystem and proves that Infineon is a reliable partner within the growing semiconductor hub Malaysia. Infineon’s operations in Malaysia started as early as 1973 in Melaka. In 2006, the company opened Asia’s first frontend fab in Kulim. Currently, Infineon employs more than 16.000 highly skilled people in Malaysia.
The Kulim 3 fab will be powered by 100% green electricity and will employ the latest energy efficiency measures to support Infineon’s goal of carbon neutrality. To avoid emissions, Infineon will use a state-of-the-art abatement system and green refrigerants that combine high efficiency with extremely low global warming potential. Other measures to ensure sustainable operations include state-of-the-art recycling of indirect materials and state-of-the-art water efficiency and recycling processes. Infineon is working towards recognition with the renowned Green Building Index certification.
Original – Infineon Technologies
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Infineon Technologies AG reported financial results for the third quarter of its 2024 fiscal year (period ended 30 June 2024).
“In a market environment that remains challenging, Infineon continues to hold up well,” says Jochen Hanebeck, CEO of Infineon. “The recovery in our target markets is progressing only slowly. Prolonged weak economic momentum has resulted in inventory levels in many areas overlaying end demand. In addition to managing the current demand cycle, we are working on further strengthening our competitiveness through the “Step Up” structural improvement program.”
- Q3 FY 2024: Revenue €3.702 billion, Segment Result €734 million, Segment Result Margin 19.8 percent
- Outlook for Q4 FY 2024: Assuming an exchange rate of US$1.10 to the euro, revenue of around €4.0 billion expected. On this basis, the Segment Result Margin is forecast to be around 20 percent
- Outlook for FY 2024: Based on the results from the first three quarters and the outlook for the fourth quarter, revenue of around €15.0 billion and a Segment Result Margin of around 20 percent is expected. Adjusted gross margin is expected to be in the low-forties percentage range. Investments are planned at around €2.8 billion. Adjusted Free Cash Flow, which is adjusted for investments in large frontend buildings and the purchase of GaN Systems, is expected to be about €1.5 billion and reported Free Cash Flow about minus €200 million
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies
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Many different trends are taking center stage in both consumer electronics and industrial applications, such as portability, electrification, and weight reduction. All of these trends require compact and efficient designs. They also go hand in hand with unconventional PCB designs with severe space constraints that limit the use of external components.
To address these challenges, Infineon Technologies AG expands its GaN portfolio with the CoolGaN™ Drive product family. It consists of the CoolGaN Drive 700 V G5 single switches, integrating one transistor plus gate driver in PQFN 5×6 and PQFN 6×8 packages, as well as the CoolGaN Drive HB 600 V G5 devices, combining two transistors with integrated high- and low-side gate drivers in a LGA 6×8 package. The new product family enables improved efficiency, reduced system size, and overall cost savings. This makes the devices suitable for longer-range e-bikes, portable power tools, and lighter-weight household appliances such as vacuums, fans, and hairdryers.
“For several years, Infineon has been focused on accelerating innovation in GaN to provide targeted solutions for real-world power challenges”, said Johannes Schoiswohl, Senior Vice President & General Manager, GaN Systems Business Line Head at Infineon. “The new CoolGaN Drive product family is another proof point of how we support our customers in developing compact designs with high power density and efficiency through GaN.”
The CoolGaN Drive family offers a wide range of single switches and half bridges with integrated drivers based on the recently announced CoolGaN Transistors 650 V G5. Depending on the product group, the components feature a bootstrap diode and are characterized by loss-free current measurement, and adjustable switch-on and switch-off dV/dt. They also provide OCP/OTP/SCP protection functions. As a result, the devices enable higher switching frequencies, leading to smaller and more efficient system solutions with high power density. At the same time, the bill of materials (BoM) is reduced. This not only results in a lower system weight, but also reduces the carbon footprint.
Samples of the half-bridge solutions are available now. Single-switch samples will be available starting Q4 2024. Further information is available at www.infineon.com/GaN-innovations.
Original – Infineon Technologies
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Infineon Technologies AG has completed the sale of its two backend manufacturing sites, one in Cavite, Philippines and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE, a leading provider of independent semiconductor manufacturing services in assembly and test.
ASE will assume operations with current employees, and further develop both sites to support multiple customers. As such, ASE and Infineon have also concluded long-term supply agreements under which Infineon will continue to receive previously established services as well as services for new products to support its customers and fulfill existing commitments.
Original – Infineon Technologies
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Infineon Technologies AG expanded the lawsuit pending before the District Court for the Northern District of California on 23 July 2024, adding claims against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates based on the infringement of three additional patents referring to gallium nitride (GaN) technology owned by Infineon. In addition, Infineon today filed a complaint with the U.S. International Trade Commission (USITC) containing legal claims referring to the same four patents covered by the lawsuit.
Infineon seeks a permanent injunction for the infringement of United States patents referring to gallium nitride (GaN) technology owned by Infineon. The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable performance and reliability of Infineon’s proprietary GaN power transistors.
Already, on 14 March 2024, Infineon filed a patent infringement suit against Innoscience in the United States with the District Court for the Northern District of California. On 4 June 2024, Infineon filed a corresponding lawsuit with the District Court Munich, Germany. Additional lawsuits were filed against distributors of Innoscience in Germany.
Furthermore, Infineon successfully filed for a preliminary injunction (court order), which the District Court Munich issued on 12 June 2024. According to this court order Innoscience was obligated to remove all infringing product from their booth at the international power electronics trade show PCIM Europe.
Infineon leads the industry with its GaN patent portfolio, comprising approximately 350 patent families. Infineon’s portfolio of silicon, silicon carbide, gallium nitride power transistors and complementary drivers and controllers was enhanced with the October 2023 acquisition of GaN Systems Inc. The acquisition boosted Infineon’s GaN offering and further expanded its leading position in power semiconductors.
Original – Infineon Technologies
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Infineon Technologies AG announced that its CoolSiC™ 2000 V modules have been selected by Daihen Corporation for their innovative unit-type power conditioners for grid storage batteries. In the journey towards reducing carbon emissions, both grid storage batteries and the power conditioners that are linked to them play a vital role in facilitating the wider adoption of renewable energy sources like solar and wind power generation.
There has been an increasing demand for higher voltage storage batteries and power conditioners to enhance the effectiveness of power generation, storage, and transmission. Moreover, with the expansion of storage battery systems on a larger scale, finding suitable locations and minimizing construction costs have emerged as significant challenges.
The unit-type power conditioner for grid storage batteries launched by Daihen in March 2024 is the first product in the industry to achieve connection to storage batteries at a high DC link voltage of 1500 V. The higher voltage enables the product to be used with large-capacity storage battery facilities, which has resulted in a 40% reduction in the footprint of grid storage batteries compared to the conventional product.
The high power density is achieved by using Infineon’s 62 mm CoolSiC MOSFET 2000 V module (FF3MR20KM1H). In addition to the characteristics of SiC that enable high voltage, better thermal dissipation and high power density, Infineon’s SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes. Infineon was the pioneer in the industry to introduce the 2000 V class for a SiC module. This innovation has been instrumental in simplifying the inverter circuit configuration. Furthermore, the optimized 62 mm package has led to a substantial reduction in system size, contributing to enhanced efficiency and performance.
Mr. Akihiro Ohori, General Manager, Development Department, Energy Management System Division, Daihen, said, “In order to increase the voltage of power conditioners, the circuit configuration of conventional 1200 V devices had become complicated. However, by adopting Infineon’s 2000 V SiC modules, we were able to achieve a simplified circuit configuration and control design, thereby reducing development resources and the footprint.”
Masanori Fujimori, Marketing Director of the Industrial & Infrastructure Segment at Infineon Technologies Japan, said, “We are very pleased that our pioneering CoolSiC 2000 V module has contributed to the development of the industry’s highest power density power conditioners for grid storage batteries. We believe that Infineon’s SiC technology will address the need for higher efficiency in energy storage systems and will greatly contribute to the growth of renewable energy.”
Original – Infineon Technologies
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Infineon Technologies AG has signed a Memorandum of Understanding with Amkor Technology, Inc. with a joint commitment to stimulate decarbonization and sustainability strategies across the supply chain.
Expanding their partnership towards sustainability is the next step in the sustainability journey of both companies. Infineon and Amkor intend to fully leverage their classical Outsourced Semiconductor Assembly and Test (OSAT) business relationship in order to effectively tackle emissions along their supply chain. In April, both companies announced to operate a dedicated packaging and test center at Amkor’s manufacturing site in Porto, Portugal.
As part of the cooperation for climate protection, Infineon and Amkor will actively engage with common suppliers to help them develop and implement effective decarbonization strategies. This will involve workshops, meetings, and the sharing of best practices and learnings related to decarbonization. The aim is to identify areas for improvement and support suppliers in setting science-based emissions reduction targets in line with the Science Based Targets initiative. Both companies are committed to providing ongoing guidance, fostering exchange, and tracking progress to drive continuous improvement across the common supply chain.
“Infineon has made excellent progress towards its aim to become CO 2-neutral for scope 1 and 2 by 2030, as the company more than halved its emissions while doubling the revenue since 2019. Supply-chain-related Scope-3-emissions represent the highest share of total emissions at Infineon and are the hardest ones to minimize,” said Angelique van der Burg, Chief Procurement Officer at Infineon. “That makes it even more important to include them in our efforts. But no one can do it alone. We need to actively collaborate and drive innovation with our suppliers if we want to effectively reduce CO 2 emissions. This is of ample importance not only for Infineon and Amkor, but also for society at large. Therefore, we are happy to join forces with Amkor on this.”
“Amkor is excited to deepen its partnership with Infineon through this strategic collaboration. Addressing Scope 3 is the most challenging part of the decarbonization journey, and we anticipate mutual benefits from this collective work in undertaking the challenge,” said Giel Rutten, President and Chief Executive Officer of Amkor. “This initiative is pivotal in achieving Amkor’s goal to reach net-zero emissions by 2050 by strengthening supply chain engagement through joint efforts. We look forward to collaborating with suppliers and invite them to join our endeavor to set ambitious science-based targets. Together, we are committed to driving positive environmental impact across our value chain.”
To support Infineon’s science-based target commitment and enhance the collaboration with suppliers, Infineon introduced a supplier engagement program in 2023. Since then, the company has been working with more than a hundred suppliers to set and implement science-based targets. The partnership between Amkor and Infineon provides an impetus for the strategy of both companies to make science-based targets the standard for ambitious climate strategies in the semiconductor industry.
Original – Infineon Technologies
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Infineon Technologies AG introduced the new CoolGaN™ Transistor 700 V G4 product family. The devices are highly efficient for power conversion in the voltage range up to 700 V. In contrast to other GaN products on the market, the input and output figures-of-merit of these transistors provide a 20 percent better performance, resulting in increased efficiency, reduced power losses, and more cost-effective solutions. The combination of electrical characteristics and packaging ensures maximum performance in many applications such as consumer chargers and notebook adapters, data center power supplies, renewable energy inverters, and battery storage.
The product series comprises 13 devices with a voltage rating of 700 V and on-resistance range from 20 mΩ to 315 mΩ. The increased granularity in device specification, combined with a wide range of industry standard package options including PDFN, TOLL and TOLT allow R DS resistance and packages to be selected according to application requirements. As a result, both electrical and thermal system performance can be optimized and implemented in the most cost-effective solution.
The devices are characterized by a fast turn-on and turn-off speed and minimal switching losses. The on-resistance range enables power systems from 20 W to 25,000 W. In addition, the 700 V E-mode with the industry’s highest transient voltage of 850 V increases the reliability of the overall system as it offers greater robustness against anomalies in the user environment such as voltage peaks.
The CoolGaN Transistor 700 V G4 products in TOLL, PDFN 5×6 and 8×8 packages are available now, more variety in R DS(on) as well as the TOLT package will follow later this year.
Original – Infineon Technologies
