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Power Integrations announced the launch of the SCALE-iFlex™ XLT family of dual-channel plug-and-play gate drivers for operation of single LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji Electric) and equivalent semiconductor modules up to 2300 V blocking voltage for wind, energy storage and solar renewable energy installations.
This single-board driver enables active thermal management of inverter modules for improved system utilization and reduces the bill-of-material count for increased reliability.
Thorsten Schmidt, product marketing manager at Power Integrations commented: “It’s a real challenge to build a single-board gate driver for these ‘new dual’ style IGBT modules. Our compact new SCALE-iFlex XLT gate drivers fit inside the outline of the module, allowing the drivers to be mounted on the module, which gives converter system designers a high degree of mechanical design freedom.”
SCALE-iFlex XLT dual-channel gate drivers feature Negative Temperature Coefficient (NTC) data reporting – an isolated temperature measurement of the power module – which allows accurate thermal management of converter systems. This enables system designers to optimize thermal design and obtain a 25 to 30 percent converter power increase from the same hardware.
The isolated NTC readout also reduces hardware complexity, eliminating multiple cables, connectors and additional isolation barrier crossing circuits. The new gate drivers employ Power Integrations’ SCALE-2 chip set which minimizes component count, enhancing reliability. The gate driver board also protects the power switches in the event of a short-circuit.
Original – Power Integrations
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Infineon Technologies AG Supervisory Board has extended the contract of Dr. Rutger Wijburg (62), Management Board member and Chief Operations Officer, for a period of one year, until 31 March 2026. In addition, the Supervisory Board will extend the contract of Andreas Urschitz (52), Management Board member and Chief Marketing Officer, for a period of five years, until 31 May 2030. The current contract of Andreas Urschitz expires at the end of May 2025; Rutger Wijburg’s contract would otherwise have expired in March 2025.
“Andreas Urschitz and Rutger Wijburg have played a decisive role in charting a course of profitable growth for Infineon. We are pleased that they will both continue as members of the Infineon Management Board in the upcoming years,” says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon Technologies AG. He adds that the Supervisory Board particularly respects the personal decision by Rutger Wijburg to extend his contract only until March 2026.
Andreas Urschitz has been a member of the Management Board since 2022, prior to which he was President of the Infineon Power & Sensor Systems (PSS) Division. Rutger Wijburg has been a member of the Management Board and Infineon’s Chief Operations Officer since 2022; he was previously Head of Frontend as well as Managing Director at Infineon Dresden.
Original – Infineon Technologies
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Infineon Technologies AG reported the results for the second quarter of the 2024 fiscal year (period ended 31 March 2024).
- Q2 FY 2024: Revenue €3.632 billion, Segment Result €707 million, Segment Result Margin 19.5 percent
- Outlook for FY 2024: Based on an assumed exchange rate of US$1.10 to the euro, Infineon now expects to generate revenue of around €15.1 billion plus or minus €400 million (previously €16 billion plus or minus €500 million), with a Segment Result Margin of around 20 percent (previously in the low to mid-twenties percentage range) at the mid-point of the guided revenue range. Adjusted gross margin will be in the low-forties percentage range (previously in the low to mid-forties percentage range). Investments are planned at around €2.8 (previously around 2.9 billion). Adjusted Free Cash Flow of about €1.6 billion (previously €1.8 billion) and reported Free Cash Flow of about €0 million (previously about €200 million) are now expected
- Outlook for Q3 FY 2024: Based on an assumed exchange rate of US$1.10 to the euro, revenue of around €3.8 billion expected. On this basis, the Segment Result Margin is forecast to be in the high-teens percentage range
„In the prevailing difficult market environment, Infineon delivered a solid second quarter”, says Jochen Hanebeck, CEO of Infineon. “Many end markets have remained weak due to economic conditions, while customers and distributors have continued to reduce semiconductor inventory levels. Weak demand for consumer applications persists. There has also been a noticeable deceleration in growth in the automotive sector. We are therefore taking a cautious approach to the outlook for the rest of the fiscal year and are lowering our forecast. In the medium to long term, decarbonization and digitalization will continue to be strong structural drivers of our profitable growth. In order to realize the full potential of our Company, we will further strengthen our competitiveness. To this end, we are launching the company-wide “Step Up” program. We are aiming to achieve structural improvements in our Segment Result in the high triple-digit million euro range per year.”
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies
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Infineon Technologies AG will provide silicon carbide (SiC) power modules HybridPACK™ Drive G2 CoolSiC™ and bare die products to Xiaomi EV for its recently announced SU7 until 2027. Infineon’s CoolSiC-based power modules allow for higher operating temperatures, resulting in best-in-class performance, driving dynamics and lifetime.
Traction inverters based on the technology can, for example, further increase electric vehicle range. The HybridPACK Drive is Infineon’s market-leading power module family for electric vehicles, with almost 8.5 million units sold since 2017.
Infineon provides two HybridPACK Drive G2 CoolSiC 1200 V modules for the Xiaomi SU7 Max. In addition, Infineon supplies Xiaomi EV with a broad range of products per car, including, for example, EiceDRIVER TM gate drivers and more than ten microcontrollers in various applications. The two companies also agreed to further cooperate on SiC automotive applications to fully utilize the benefits of Infineon’s SiC portfolio.
Zhenyu Huang, Vice President of Xiaomi EV and General Manager of the Supply Chain Department, said: “Infineon is an important partner with leading technologies and resilient manufacturing capabilities in power semiconductors as well as a highly scalable microcontroller product portfolio. The cooperation between the two companies will not only help stabilize the supply of silicon carbide for Xiaomi EV, but also help us build a high-performance, safe and reliable luxury car with leading-edge features for our customers.”
Peter Schiefer, President of Infineon’s Automotive division, said: “We are very pleased to work with dynamic players such as Xiaomi EV and provide them with silicon carbide products designed to enhance the performance of electric cars even further. As the leading partner to the automotive industry, we are well positioned with our broad product portfolio, system understanding and multi-site manufacturing base to shape the mobility of the future.”
This collaboration contributes to Infineon’s position as the number one partner of the global automotive industry. According to the latest data from TechInsights, Infineon is the largest semiconductor supplier to the automotive industry. In addition to its number one position in automotive power semiconductors, Infineon also took the lead in the field of automotive microcontrollers last year.
Original – Infineon Technologies
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Infineon Technologies AG supplies its power semiconductor devices to FOXESS, a fast-growing leader in the green energy industry and a manufacturer of inverters and energy storage systems. The two sides aim at promoting the development of green energy.
Infineon will provide FOXESS with its CoolSiC™ MOSFETs 1200 V, which will be used with EiceDRIVER™ gate drivers for industrial energy storage applications. At the same time, FOXESS’ string PV inverters will use Infineon’s IGBT7 H7 1200 V power semiconductor devices.
The global market for photovoltaic energy storage systems (PV-ES) has grown at a high speed in the last years. As competition in the PV-ES market accelerates, improving power density has become key to success, and how to improve efficiency and power density for energy storage applications has attracted much attention. Infineon’s CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V series power semiconductor devices adopt the latest semiconductor technologies and design concepts that are tailored to industrial applications.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure of Infineon Technologies Greater China said, “As an industry leader in power semiconductors, we are proud to work closely with FOXESS. We will continue to drive decarbonization by enabling higher power density and more reliable systems for PV-ES applications.”
Mr. Zhu Jingcheng, Chairman of FOXESS, said, “Thanks to the support of Infineon’s advanced components, FOXESS’ products have been significantly improved in terms of reliability and efficiency. This has been an important driving force for FOXESS’ growth. Infineon’s technical support and product quality have not only strengthened our competitiveness, but also expanded our presence in the market. We are confident about the future and look forward to further cooperation with Infineon to jointly promote the development of the industry and create greater value for our customers.”
With a high power density, Infineon’s CoolSiC MOSFETs 1200 V can reduce losses by 50 percent and provide ~2 percent additional energy without increasing the battery size, which is especially beneficial for high-performance, lightweight, and compact energy storage solutions. FOXESS’ H3PRO 15 kW-30 kW energy storage series uses Infineon’s CoolSiC MOSFETs 1200 V for all models. Thanks to Infineon’s excellent performance, the H3PRO series has achieved an efficiency of up to 98.1 percent and excellent EMC performance; with superior performance and reliability, the H3PRO series has seen rapid sales growth in the global market.
Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V series has lower losses and helps improve the overall efficiency and power density of inverters. In high-power inverter projects, high-current mold packaged discrete devices with current handling capability above 100 A can reduce the number of IGBTs in parallel and replace the IGBT module solution, further improving system reliability and reducing costs; in addition, the H7 series has become an industry benchmark for its high-quality performance and greater resistance to humidity.
At present, FOXESS’ main industrial and commercial model, the R Series 75-110 kW, redefines the overall design of the 100 kW model by using IGBT7 H7 series discretes, and the efficiency of the whole machine can reach up to 98.6 percent. Thanks to the low power loss and high power density of the IGBT7 H7 series in discrete packages, technical problems such as current sharing in the paralleling process can be simplified and optimized.
Every power device needs a driver, and the right driver can make the design a lot easier. Infineon offers more than 500 EiceDRIVER gate drivers with typical output currents of 0.1 A~18 A and comprehensive protection functions including fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault reporting, shutdown, and overcurrent protection, suitable for all power devices including CoolSiC and IGBTs.
Original – Infineon Technologies
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Chicony Power Technology, a worldwide leading manufacturer of power supplies and a pioneer in power electronics, has announced the winners of its Annual Partner Awards, honoring Infineon Technologies AG as its 2023 “GaN Strategic Partner of the Year”.
Infineon has been recognized by Chicony Power as its top partner for gallium nitride (GaN)-based power supplies, including notebook adapters, as well as ICT applications in gaming, storage and servers. This acknowledgment is the result of Infineon’s high standards for product selection, application expertise, high reliability and cost-effectiveness.
GaN stands out as one of the most crucial technologies which are essential for improving the efficiency of power supplies and reducing their product size. Pooling Infineon’s leading GaN expertise and Chicony Power’s remarkable capabilities in power supply system design, the win-win collaboration has helped push the boundaries of innovation and further strengthened both companies’ leading positions in energy-efficient power solutions. As of today, the GaN adoption rate in Chicony Power’s high-watt adapters has reached 20 percent, and this rate is rapidly increasing.
“Unrivalled R&D resources, a comprehensive application understanding and a large number of customer projects let Infineon continuously drive its roadmap for becoming a leading GaN Powerhouse,” said Adam White, Division President Power & Sensor Systems at Infineon Technologies. “The Strategic Partner of the Year award from Chicony Power is a great honor for us. We see this as part of our common mission to drive decarbonization and digitalization together.”
“We’re pleased to honor Infineon, which has played a pivotal role in driving customer success throughout 2023, as our GaN Strategic Partner of the Year,” said Peter Tseng, President of Chicony Power Technology. “Our Vision is to be a global pioneer in the implementation of new technology that enhances power supply efficiency, reduces the carbon footprint of power supplies and helps create a greener world. We would like our Annual Partner Awards to encourage Infineon and all other partners to maintain the momentum in jointly promoting GaN technology in the market alongside Chicony Power, making the power industry greener and cleaner.”
Original – Infineon Technologies
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Infineon Technologies AG continued to expand its leading market position in automotive semiconductors in 2023. According to the latest research by TechInsights, the global automotive semiconductor market grew by 16.5 percent in 2023, reaching a new record size of US$69.2 billion.
Infineon’s overall market share increased by one percentage point, from nearly 13 percent in 2022 to about 14 percent in 2023, solidifying the company’s position as the global leader in the automotive semiconductor market. Infineon’s semiconductors are essential in serving all automotive key applications like driver assist and safety systems, powertrain and battery management, comfort, infotainment and security.
According to TechInsights, Infineon has increased its market share in all regions and remained market leader in South Korea and China. In addition, Infineon has made significant gains in the Japanese automotive semiconductor market. Infineon has strengthened its strong European presence as the second-largest player, as well as its top three position in North America.
“We are very proud that we have expanded our position as the leading automotive semiconductor supplier. This great success is based on our product innovation and system competence that add value to our customers’ solutions,” said Peter Schiefer, President of the Automotive Division at Infineon. “We also see this achievement as motivation, since our automotive semiconductors are the basis for the future of mobility, making cars clean, safe and smart.”
“Infineon maintained the top spot in the TechInsights automotive semiconductor 2023 vendor market share rankings with nearly 14 percent market share,” said Asif Anwar, Executive Director of Automotive End Market Research at TechInsights. “The company’s automotive semiconductor revenues grew over 26 percent year-on-year, allowing the company to stretch its lead over its second and third place rivals by four percentage points.”
A major driver of Infineon’s performance was strong automotive microcontroller (MCU) sales. For the first time, Infineon has reached the world’s number one position in this market. The company’s sales in the automotive microcontroller segment increased by nearly 44 percent compared to 2022, resulting in a 2023 market share of about 29 percent worldwide.
Microcontrollers are key components in the automotive industry, controlling and monitoring a wide variety of systems in the automobile such as electric powertrain, electric-electronic (E/E) architecture, advanced driver assistance systems (ADAS) and automated driving, radar and chassis.
Infineon’s AURIX™ flagship microcontroller family and the TRAVEO™ microcontroller family are the main contributors to this success, driving the transition in the automotive industry towards autonomous, connected and electrified vehicles. The families combine power and performance enhancements with the latest trends in the fields of virtualization, AI-based modeling, functional safety, cybersecurity and network functions. They are paving the way for new E/E architectures as well as the next generation of software-defined vehicles.
Original – Infineon Technologies
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Infineon Technologies AG is strengthening its outsourced backend manufacturing footprint in Europe and announced a multi-year partnership with Amkor Technology, Inc., a leading provider of semiconductor packaging and test services. Both companies have agreed on operating a dedicated packaging and test center at Amkor’s manufacturing site in Porto. Operations are expected to commence in the first half of 2025.
With this long-term agreement, Infineon and Amkor further strengthen their partnership, extending the classical Outsourced Semiconductor Assembly and Test (OSAT) business model. Amkor will expand its facilities in Porto and run the production line, providing dedicated clean room space, and Infineon will provide an onsite team with engineering and development support.
The cooperation further strengthens the European semiconductor supply chain and contributes to making it more resilient – especially for automotive customers. It complements Infineon’s already diversified manufacturing footprint, balancing inhouse and outsourced production capabilities.
”We are pleased to further deepen our partnership with Amkor and will contribute with our engineering and development expertise,” said Alexander Gorski, Executive Vice President and responsible for Infineon’s global Backend Operations.
”Infineon and Amkor are jointly increasing geographical resilience and supply security for our customers. Together, we are strengthening Europe’s importance as a location for semiconductor manufacturing. For 20 years, Infineon has been successfully operating a large service center in Porto, now with more than 600 employees. With the joint manufacturing center, we are becoming even more deeply rooted in Portugal’s excellent semiconductor ecosystem. We are looking forward to further increasing our footprint in Portugal.”
“Amkor is proud to expand our partnership with Infineon,” said Giel Rutten, Amkor’s president and chief executive officer. “We continue to invest in our Porto manufacturing site, expanding capacity as well as broadening our Advanced packaging and test technology portfolio. This collaboration represents another milestone for both companies in enhancing supply chain resiliency for advanced products supporting Automotive & Industrial end markets.”
Original – Infineon Technologies
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Infineon Technologies AG and HD Korea Shipbuilding & Offshore Engineering Co. Ltd. (HD KSOE) have signed a non-binding Memorandum of Understanding (MoU) as a first step towards jointly developing emerging applications for the electrification of marine engines and machinery using energy-efficient power semiconductor technology.
HD KSOE, a marine pioneer and global leader in ship building, is already focusing on creating eco-friendly decarbonized ship technology that uses electricity and hydrogen. The company will now cooperate with Infineon to create innovative power solutions for propulsion drive technology, a core element for ship electrification.
Power semiconductors from Infineon drive the transformation towards clean, safe, and smart mobility services across all means of transportation. For modern maritime applications they are a key factor in guaranteeing a precise control of multiple power modules, such as large-capacity propulsion drives.
Infineon will provide HD KSOE with technical assistance and mentoring in semiconductor power modules and system solutions, as well as share information on new semiconductor trends for marine applications. With the partnership HD KSOE aims to enhance reliability and performance of marine vessels’ propulsion drive technology contributing to environmental sustainability through the electrification of ships.
Worldwide, maritime transport is responsible for almost 2.5 percent of total greenhouse gas emissions, according to the International Maritime Organization. It produces one billion tons of CO 2 each year. The transition to electric ships is imperative to mitigate the environmental impact of maritime transportation.
“We are pleased to sign an MoU with Infineon, which underpins our innovation efforts to become a leader in ship electrification technology,” said Chang Kwang-pil, Chief Technology Officer of HD KSOE. “Together, we will combine our strengths to create energy-efficient power solutions for CO2-friendly propulsion drives.”
“At Infineon we are providing the technologies needed in today’s world of transportation to drive electrification that will shape the future of mobility,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “We are excited to work closely together with HD KSOE to develop clean, safe and smart mobility solutions. This way, we contribute to a more sustainable marine engine ecosystem and drive the decarbonization of shipping.”
Original – Infineon Technologies
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Infineon Technologies AG introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V. The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package.
The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package.
In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
The IAUCN08S7N013 is in mass-production and available now. More information is available at www.infineon.com/iaucn08s7n013/.
Original – Infineon Technologies
