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Infineon Technologies AG introduced the SSO10T TSC package with OptiMOS™ MOSFET technology. With its direct top-side cooling concept, the package offers excellent thermal performance. This eliminates heat transfer into or through the PCB of the automotive electronic control unit.
The package enables a simple and compact double-sided PCB design and minimizes cooling requirements and system costs for future automotive power designs. The SSO10T TSC is therefore well suited for applications such as electric power steering (EPS), EMB, power distribution, brushless DC drives (BLDC), safety switches, reverse battery, and DCDC converters.
The SSO10T TSC has a 5 x 7 mm² footprint and is based on the established industry standard SSO8, a 5 x 6 mm² robust housing. However, due to its top-side cooling, the SSO10 TSC offers more than 20 percent and up to 50 percent higher performance than the standard SSO8 – depending on the thermal interface (TIM) material used and the TIM thickness. The SSO10T TSC package is JEDEC listed for open market and provides wide second source compatibility. As a result, the package can be introduced quickly and easily as the future standard for top-side cooling.
The SSO10T package enables a very compact PCB design and reduces the system footprint. It also lowers the cost of the cooling design by eliminating vias, resulting in lower overall system costs and design effort. At the same time, the housing offers high power density and efficiency, thus supporting the development of future-proof and sustainable vehicles.
Original – Infineon Technologies
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Decarbonization and digitalization are the two central challenges of our time, but they rely on new and advanced technologies. At embedded world 2024 in Nuremberg, Infineon Technologies AG will demonstrate how its innovative semiconductor solutions support and drive these advancements.
Microcontrollers in particular play an important role as they are at the heart of a wide range of applications, from electric vehicles and renewable energy systems to smart homes and industrial automation. For this reason, Infineon showcases high-quality microcontrollers designed with the latest technologies and innovative features such as enhanced security and high accuracy, offering excellent performance with low power consumption.
Under the motto “Driving decarbonization and digitalization. Together.” Infineon invites its customers to embedded world 2024 to demonstrate innovative semiconductor solutions that contribute to a more sustainable future. In addition, customers can register for Infineon’s digital platform – the perfect place to dive deeper into the various technologies presented at EW during and after the event. The Infineon booth in Hall 4A (booth #138) will present highlights from the consumer and IoT, automotive, and industrial sectors.
Consumer and IoT: With its broad portfolio of IoT solutions, Infineon supports manufacturers in providing consumers with more comfortable, secure, and energy-efficient homes and buildings by utilizing the company’s latest microcontroller, sensor, security, and connectivity solutions. In this area, visitors will discover:
- Robotics development platform: The platform includes hardware and software solutions for key robotics subsystems such as main and motor controllers, battery management systems and sensors, which enable developers to get robots up and running faster and easier.
- Better sleep quality with XENSIV™: Leveraging Infineon’s 60 GHz radar, PSoC™ and Wi-Fi® technologies, the XENSIV Sleep Quality Service is designed to measure and optimize the user’s sleep based on their individual needs.
- Simplifying air quality monitoring and optimizing energy efficiency with the new XENSIV PAS CO2 5V kits: The XENSIV PAS CO2 5V Sensor2Go kit provides developers with seamless CO 2 sensor integration and a plug-and-play solution. The effortless connection to the graphical user interface (GUI) allows users to accurately analyze CO 2 data in real time from multiple kits.
- Land a rocket on the Edge: This fun game demonstrates the PSoC Edge device’s ability to integrate multiple functions such as high-performance computing, graphics processing and display, acoustic activity recognition, speech recognition, sensing and gesture recognition with ML in the same chip and application.
Automotive: As a leading supplier of automotive solutions, Infineon focuses on making smart cars a reality with proven microcontroller, connectivity, security, and sensor technologies for the industry. The company’s microelectronics play a critical role in delivering zero-emission vehicles that are smart, connected, safe and reliable.
- AI-based siren recognition: Infineon showcases an autonomous car that recognizes emergency vehicles by their characteristic siren sound and reacts accordingly without violating traffic regulations. This system solution combines MEMS microphones, a microcontroller unit (MCU), and AI software from Imagimob.
- Next generation eMobility: Infineon enables next-generation vehicles with the AURIX™ TC4x microcontroller family and the AURIX Development Studio (ADS). With these solutions, manufacturers can easily implement modern ADAS, advanced automotive E/E architectures and affordable Artificial Intelligence (AI) applications.
- TRAVEO™ T2G Cluster 6M Lite Kit: With the TRAVEO T2G CYT4DL device prototypes can be implemented in the shortest possible time and at minimal cost.
Industrial: Infineon supports smart factories and provides manufacturers with a broad sensor portfolio and an extensive partner network. In this way, the company enables reliable data acquisition and processing that enables condition monitoring and predictive maintenance in various Industry 4.0 use cases:
- Predictive maintenance: In this sector, Infineon will present a portable HVAC system equipped with the XENSIV Predictive Maintenance Evaluation Kit. The demo includes a TinyML model and a cloud-based AI service solution generator.
At the Infineon booth, the company has set up a comprehensive series of TechTalks. The seven presentations will cover a wide range of different topics, from software to products, and from consumers to industry. Full details of all Infineon conference presentations, technical workshops and TechTalks can be found here.
Daily program of the Tech Talks
- “Ambient sensing: Infineon radar solutions: How Infineon’s tools and enablement can accelerate your time to market” at 10:00 a.m. presented by Firas Labidi
- “Embedded AI and safety – Embedded AI will enable the innovations for next generation of electric vehicle and autonomous driving” at 11:00 a.m. presented by Jürgen Schäfer
- “Accelerate your product development with system reference designs” at 12:00 p.m. presented by Jaya Bindra
- “Addressing the next generation of Edge AI devices with PSoC Edge” at 1:00 p.m. presented by Rebecca Phillips
- “TRAVEO T2G MCUs for automotive HD front lighting” at 2:00 p.m. presented by Maniacherry Devassy Anu
- “Unlocking the power of Edge AI with Imagimob and ModusToolbox™” at 3:00 p.m. presented by Alexander Samuelsson
- “Infineon’s solutions for robotics” at 4:00 p.m. presented by Nenad Belancic
Original – Infineon Technologies
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Innoscience Technology firmly denounces the accusations made by Infineon Technologies Austria AG in a recent patent infringement lawsuit against three Innoscience entities. Infineon filed this lawsuit in a U.S. district court in California on March 13, 2024, and asserted a single U.S. patent.
Innoscience denies Infineon’s allegations of patent infringement as well as the validity of the Infineon patent. Innoscience will vigorously defend itself and is confident that it will prevail. Infineon’s intention with this litigation is also in question, as it has asserted a patent that has significant defects. Particularly, even a cursory review of Infineon’s patent portfolio reveals that the alleged “invention” of the asserted patent was already disclosed in Infineon’s own earlier prior art patents, raising concerns that it may have committed fraud on the United States Patent and Trademark Office, for not making proper disclosures during the prosecution of the asserted defective patent.
In addition, contrary to Infineon’s wrong characterization that the claims of the asserted defective patent “cover core aspects of GaN power semiconductors,” the lawsuit only concerns a small fraction of Innoscience’s packaged high-voltage (650V-700V) GaN transistors and does not affect the vast majority of its other products (including unpackaged transistors and wafers, low-voltage transistors, and certain packaged transistors).
Therefore, the lawsuit should have little to no effect on Innoscience’s current ability to make, use, sell, offer to sell, or import into the United States its products for customers. Innoscience respects others’ valid IP rights and is also dedicated to developing its own IP portfolio. Despite being an eight-year old company, Innoscience has filed more than 800 patent applications globally. Innoscience’s R&D team boasts 500+ technical experts across the world.
Through continuing innovation, Innoscience has produced GaN devices to power a diverse range of products, from power delivery chargers to data centers and smartphones, showcasing its ability to align with evolving application demands and adapt to diverse customer specifications.
Moreover, Innoscience has always sought a cooperative and mutually beneficial approach to develop the global GaN industry, even among others in the same industry. Innoscience intends to prevail in this pending lawsuit and is determined to remain a trusted and reliable partner for its customers and contribute to their success by offering top-notch and versatile products and solutions based on Innoscience’s home-grown, superior technologies.
Original – Innoscience Technology
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On 18 March 2024, Infineon Technologies AG successfully completed its Share Buyback Program 2024, announced on 26 February 2024 in accordance with Article 5(1)(a) of Regulation (EU) No 596/2014 and Article 2(1) of Delegated Regulation (EU) No 2016/1052.
As part of the Share Buyback Program 2024, a total of 7,000,000 shares (ISIN DE0006231004) were acquired. The total purchase price of the repurchased shares was € 232,872,668. The average purchase price paid per share was € 33.27.
The buyback was carried out on behalf of Infineon by an independent credit institution via Xetra trading on the Frankfurt Stock Exchange, serving the sole purpose of allocating shares to employees of the company or affiliated companies, members of the Management Board of the company as well as members of the management board and the board of directors of affiliated companies as part of the existing employee participation programs.
Original – Infineon Technologies
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Infineon Technologies AG filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates. Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon.
The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Northern District of California.
Infineon alleges that Innoscience infringes the Infineon patent mentioned above by making, using, selling, offering to sell and/or importing into the United States various products, including GaN transistors for numerous applications, within automotive, data centers, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.
“The production of gallium nitride power transistors requires completely new semiconductor designs and processes”, said Adam White, President of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.”
Infineon has been investing in R&D, product development and the manufacturing expertise related to GaN technology for decades. Infineon continues to defend its intellectual property and protect its investments.
On 24 October 2023, Infineon announced the closing of the acquisition of GaN Systems Inc., becoming a leading GaN power house and further expanding its leading position in power semiconductors.
Infineon leads the industry with its GaN patent portfolio, comprising around 350 patent families. Market analysts expect the GaN revenue for power applications to grow by 49% CAGR to approx. US$2 billion by 2028 (source: Yole, Power SiC and GaN Compound Semiconductor Market Monitor Q4 2023). Gallium nitride is a wide bandgap semiconductor with superior switching performance that allows smaller size, higher efficiency and lower-cost power systems.
Original – Infineon Technologies
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Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Original – Infineon Technologies
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Infineon Technologies AG introduced the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions.
The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.
The CoolSiC MOSFET 2000 V product family is ideally suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation. Due to the .XT connection technology, the components offer first-class thermal performance. They are also highly resistant to humidity.
In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes: The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.
The CoolSiC MOSFET 2000 V product family is available now. In addition, Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000 V and the EiceDRIVER™ Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation.
Original – Infineon Technologies
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Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.
CoolSiC MOSFET Generation 2 (G2) technology continues to leverage performance capabilities of silicon carbide by enabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies.
A DC fast charging station for electric vehicles which is equipped with CoolSiC G2 allows for up to 10 percent less power loss compared to previous generations, while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges. In the area of renewable energies, solar inverters designed with CoolSiC G2 make smaller sizes possible while maintaining a high power output, resulting in a lower cost per watt.
“Megatrends call for new and efficient ways to generate, transmit and consume energy. With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon.
“This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems harvesting energy-savings and reducing CO 2 for every watt installed in the field. It’s a great example of Infineon’s relentless spirit, constantly pushing for innovation to drive decarbonization and digitalization in the industrial, consumer and automotive sectors.”
Contributing to high-performance CoolSiC G2 solutions, Infineon’s pioneer CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared to SiC MOSFET technology available so far. Combined with the award-winning .XT packaging technology, Infineon is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control and improved performance.
Mastering all relevant power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers design flexibility and leading-edge application know-how that meet the expectations and demands of modern designers. Innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are the key to conscious and efficient use of energy in fostering decarbonization.
Original – Infineon Technologies
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Infineon Technologies AG is setting the course for ambitious growth by further strengthening and streamlining its sales organization. Starting 1 March, Infineon’s sales team will be structured around three customer-centric Sales Segments: “Automotive”, “Industrial & Infrastructure” and “Consumer, Computing & Communication”.
The DEM sales organization will retain responsibility for distributors and Electronics Manufacturing Services (EMS). This new structure will further leverage the potential of Infineon’s comprehensive and diverse product portfolio by putting customers’ application needs at the center of the new organizational model. All of these organizations will be deployed globally with an optimized regional footprint.
“Customers’ expectations are quickly evolving and are driven by speed of innovation and faster time-to-market,” says Andreas Urschitz, Chief Marketing Officer of Infineon. “With a streamlined customer interface which brings the relevant products and application expertise to the customers’ doorstep, Infineon is ideally positioned to enable customers’ success.”
This simpler approach will give customers easier access to Infineon’s full portfolio and match their specific needs by offering complementary products from different divisions. In addition, this reorganization will reduce the number of interfaces for Infineon’s customers and help drive down time-to-market for their R&D projects enabled by Infineon semiconductors and solutions.
Original – Infineon Technologies
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Infineon Technologies AG introduced a new product family of Solid-State Isolators to achieve faster and more reliable circuit switching with protection features not available in optical-based solid state relays (SSR). The isolators use coreless transformer technology and support 20 times greater energy transfer with both current and temperature protection contributing to a higher reliability and lower cost of ownership.
The new solid-state isolators allow driving the gates of Infineon’s MOS-controlled power transistors OptiMOS ™ and CoolMOS™ to reduce power dissipation of up to 70 percent of todays’ solid-state relays using SCR (silicon-controlled rectifier) and Triac switches.
Infineon’s solid-state isolators enable custom solid-state relays capable of controlling loads more than 1000 V and 100 A. Improved performance and reliability make coreless transformer technology ideal for applications in advanced battery management, energy storage, renewable energy systems, as well as industrial and building automation system applications. With Infineon’s solid-state isolator drivers, engineers can further improve the efficiency of electronic and electromechanical systems.
“Implementing coreless transformers in solid-state isolators and relays is truly a game-changer for power engineers; it provides 50 times lower RDS (on) than existing optically controlled solutions. This enables their use in higher-voltage and higher power applications,” said Davide Giacomini, Marketing Director for the Green Industrial Power Division at Infineon Technologies.
When matched with Infineon’s CoolMOS S7 switch, the isolator drivers enable switching designs with a much lower resistance compared to optically driven solid-state solutions. This translates to longer lifespans and lower cost of ownership in system designs. As with all solid-state isolators, the devices also offer superior performance compared to electromagnetic relays, including 40 percent lower turn-on power and increased reliability due to elimination of moving parts.
The family of devices is designed to be compatible with Infineon’s broad switching portfolio including Infineon’s CoolMOS S7, OptiMOS TM and linear FET portfolios.
Original – Infineon Technologies
