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onsemi released the newest generation silicon and silicon carbide hybrid Power Integrated Modules (PIMs) in an F5BP package, ideally suited to boost the power output of utility-scale solar string inverters or energy storage system (ESS) applications. Compared to previous generations, the modules offer increased power density and higher efficiencies within the same footprint to increase the total system power of a solar inverter from 300kW up to 350kW.
This means a one-gigawatt (GW) capacity utility-scale solar farm using the latest generation modules can achieve an energy savings of nearly two megawatts (MW) per hour or the equivalent of powering more than 700 homes per year. Additionally, fewer modules are required to achieve the same power threshold as the previous generation, which can reduce power device component costs by more than 25%.
With solar power having achieved the lowest levelized cost of energy (LCOE), it is increasingly becoming the go-to source for renewable power generation around the world. To compensate for solar power’s variability, utility operators are also adding large-scale battery energy storage systems (BESS) to ensure a stable energy flow to the grid. To support this combination of systems, manufacturers and utilities require solutions that offer maximum efficiency and reliable power conversion. Every 0.1% of efficiency improvement can equate to a quarter of a million dollars in annual operational savings for every one gigawatt of installed capacity.
“As a variable energy source dependent on sunlight, continual advances in increasing system efficiencies, reliability and advanced storage solutions are needed to be able to maintain the stability and reliability of global grids during peak and off-peak power demand,” said Sravan Vanaparthy, vice president, Industrial Power Division, Power Solutions Group, onsemi. “A more efficient infrastructure increases adoption and assures us that, as more solar power generation is built out, less energy is wasted and pushes us forward on a path away from fossil fuels.”
The F5BP-PIMs are integrated with 1050V FS7 IGBT and the 1200V D3 EliteSiC diode to form a foundation that facilitates high voltage and high current power conversion while reducing power dissipation and increasing reliability. The FS7 IGBTs offer low turn-off losses and reduce switching losses by up to 8%, while the EliteSiC diodes provide superior switching performance and lower voltage flicker by 15% compared to previous generations.
These PIMs employ an innovative I-type Neutral Point Clamp (INPC) for the inverter module and a flying capacitor topology for the boost module. The modules also use an optimized electrical layout and advanced Direct Bonded Copper (DBC) substrates to reduce stray inductance and thermal resistance. In addition, a copper baseplate further decreases thermal resistance to the heat sink by 9.3%, ensuring the module remains cool under high operational loads. This thermal management is crucial in maintaining the efficiency and longevity of the modules, making them highly effective for demanding applications that require reliable and sustained power delivery.
Original – onsemi
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MCC Semi unveiled a new 950V MOSFET – MCU1K4N95SH. While traditional MOSFETs often include energy losses and slower switching, this new superjunction (SJ) MOSFET features a low gate-to-drain charge, significantly reducing conduction losses and amplifying overall efficiency.
Its superjunction MOSFET technology and on-resistance of only 1.49Ω empower engineers to design for higher voltage ratings without compromising performance. A DPAK (TO-252) package only adds to this MOSFET’s versatility, making it ideal for AC-DC power supplies, LED lighting, charging adapters, solar and energy devices, and other high-voltage applications across multiple industries.
Features & Benefits:
- Superjunction (SJ) MOSFET technology enhances efficiency
- High-voltage rating of 950V is well-suited for demanding applications
- Low gate charge enables faster switching speeds
- High-speed switching capabilities improve overall performance
Original – Micro Commercial Components
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Alpha and Omega Semiconductor Limited (AOS) announced its new highly robust power MOSFET LFPAK 5×6 package. AOS’s new LFPAK product offering is available in a wide range of voltages: 40V, 60V, and 100V, and it is designed to withstand harsh environments while maintaining MOSFET performance. The new devices are found in a broad range of applications such as industrial, server power, telecommunications, and solar, where high reliability is required.
AOS’s LFPAK packaging enables higher board-level reliability due to key packaging features such as gull wing leads, which offer a ruggedized solution for board-level environmental stresses. The gull-wing leads also enable optical inspection during PCBA manufacturing. Another feature enhancement is the LFPAK’s larger copper clip, which improves electrical and thermal performance. Advantages of the large clip include improved current handling capabilities, reduced on-resistance, and better heat dispersion compared to wire bonding. A large clip also has low parasitic inductance, enabling lower spike voltage in switching applications. All these features significantly improve the robustness of the MOSFET, and utilizing AOS’s advanced shielded gate MOSFET Technology (AlphaSGT™) enables designers to find an optimized solution to achieve high reliability under the harshest environmental conditions.
“Designers have long trusted AOS power semiconductors in their applications, and LFPAK 5×6 will expand
solution capability,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.Original – Alpha and Omega Semiconductor
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MCC Semi is expanding advanced silicon carbide portfolio with six new 650V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.
Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility. These new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.
Features & Benefits:
- High switching speed with low gate charge
- Low switching losses
- Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
- Avalanche ruggedness for enhanced durability
- TO247 3-pin and 4-pin package options
- Kelvin-source connection for precision (4-pin only)
Original – Micro Commercial Components
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MCC Semi introduced two 600V N-channel MOSFETs with superjunction (SJ) technology. Engineered for maximum efficiency, MSJPFR20N60 and MSJPFFR20N60 boast a low on-resistance of 193mΩ, ensuring minimal power losses. Their integrated fast recovery diode ensures rapid recovery times, dramatically optimizing overall switching performance and circuit reliability.
Superjunction MOSFET technology empowers these components to handle high currents while reducing thermal management needs due to minimal heat dissipation, enhancing efficient operation. Available in isolated (TO-220F) and non-isolated (TO-220AB) packages, these MOSFETs are an excellent and seamless upgrade for existing designs, as well as new products.
For meeting the demands of modern electronics design in high-voltage switching applications, including power supplies, AC-DC converters, and motor drives, our new 600V SJ MOSFETs are the obvious solution.
Features & Benefits:
- Advanced superjunction (SJ) MOSFET technology reduces thermal management requirements
- Low on-resistance of 193mΩ enhances efficiency
- Low conduction losses due to minimal heat dissipation
- Low gate charge improves switching speed and efficiency
- Integrated fast recovery diode empowers high-speed switching
- Seamless integration with non-isolated TO-220AB and isolated TO-220F packages
Original – Micro Commercial Components
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As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production.
The highly efficient 200-millimeter SiC power fab will strengthen Infineon’s role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionized high-power applications because they switch electricity even more efficiently and enable even smaller designs.
SiC semiconductors increase efficiency in electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers. 900 high-value jobs will be created already in the first phase. The second phase, with an investment of up to five billion euros, will create the world’s largest and most efficient 200-millimeter SiC power fab. Overall, up to 4.000 jobs will be created with the project.
“New generations of power semiconductors based on innovative technology such as silicon carbide are an absolute prerequisite to achieving decarbonization and climate protection. Our technology increases the energy efficiency of ubiquitous applications such as electric cars, solar and wind power systems and AI data centers. We are therefore investing in the largest and most efficient high-tech SiC production facility in Malaysia, backed by strong customer commitments,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “Since the demand for semiconductors will constantly rise, the investment in Kulim is highly attractive to our customers, who are backing it with their prepayments. It also increases the resilience of the supply chain for critical components needed for the green transition.”
“Infineon’s remarkable project reinforces Malaysia’s position as a rising major global semiconductor hub” says Malaysian Prime Minister YAB Dato’ Seri Anwar Ibrahim. “This major investment, which will locate the world’s largest and most competitive SiC power fab on our shores, will create jobs and opportunities, as well as attract suppliers, universities and top talent. Moreover, it will support Malaysia’s efforts to protect our climate by boosting electrification and increasing the efficiency of many applications, including electric cars and renewable energy. Thus, technology made in Malaysia will become a central part of global decarbonization efforts in the future.”
“Infineon’s deeply rooted presence in Kulim is a testament to the region’s potential as a hub for high-tech industries,” says Kedah Chief Minister YAB Muhammad Sanusi Md Nor. “This investment will not only create high-value job opportunities for the local community, it will also catalyze economic growth in the region. We are committed to continue providing top business conditions in Kedah and supporting Infineon’s efforts to establish a leading semiconductor facility in Kulim, which will have a positive ripple effect on the entire ecosystem.”
Infineon has secured design wins with a total value of approximately five billion euros and has received approximately one billion euros in prepayments from existing and new customers for the ongoing expansion of the Kulim 3 fab. Notably, these design wins include six OEMs in the automotive sector as well as customers in the renewable energy and industrial segments.
Kulim 3 will be closely connected to the Infineon site in Villach, Austria, Infineon’s global competence center for power semiconductors. Infineon already increased capacity for SiC and GaN power semiconductors in Villach in 2023. As “One Virtual Fab” for wide-bandgap technologies, both manufacturing sites now share technologies and processes which allow for fast ramping and smooth and highly efficient operation. The project also offers a high grade of resilience and flexibility, which will ultimately benefit Infineon’s customers.
The expansion will benefit from the excellent economies of scale already achieved for 200-millimeter manufacturing in Kulim. It will complement Infineon’s leading position in silicon, based on 300-millimeter manufacturing in Villach and Dresden. Thus, Infineon is strengthening its technological leadership across the entire spectrum of power semiconductors, in silicon as well as SiC and GaN.
In addition, the investment in wide-bandgap capacity in Kulim strengthens the local ecosystem and proves that Infineon is a reliable partner within the growing semiconductor hub Malaysia. Infineon’s operations in Malaysia started as early as 1973 in Melaka. In 2006, the company opened Asia’s first frontend fab in Kulim. Currently, Infineon employs more than 16.000 highly skilled people in Malaysia.
The Kulim 3 fab will be powered by 100% green electricity and will employ the latest energy efficiency measures to support Infineon’s goal of carbon neutrality. To avoid emissions, Infineon will use a state-of-the-art abatement system and green refrigerants that combine high efficiency with extremely low global warming potential. Other measures to ensure sustainable operations include state-of-the-art recycling of indirect materials and state-of-the-art water efficiency and recycling processes. Infineon is working towards recognition with the renowned Green Building Index certification.
Original – Infineon Technologies
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Solitron Devices released the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET.
Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227 the SD11740 offers ultra-low RDS(on) of 8.6mΩ.
The addition of the SOT-227 style package enables higher power applications for Solitron’s SiC based products in EV, power controllers, motor drive, induction heating, solid state circuit breakers and high voltage power supplies. The SD11740 offers 120A of continuous drain current. The SOT-227 features 3kV isolation to a copper heat sink base for outstanding low thermal impedance. The device provides a real Kelvin gate connection for optimal gate control. Either emitter terminal can be used as main or Kelvin emitter.
Designed for use as a power semiconductor switch the SD11740 outperforms silicon based MOSFETs and IGBTs. The standard gate drive characteristics allow for a true drop-in replacement to silicon IGBTS and MOSFETs with far superior performance. Ultra-low gate charge and exceptional reverse recovery characteristics, make them ideal for switching inductive loads and any application requiring standard gate drive.
Original – Solitron Devices
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Nexperia announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5×6 mm and 8×8 mm footprints. These new NextPower 80/100 V MOSFETs are optimized for low (RDSon) and low Qrr, to deliver high efficiency and low spiking in applications including servers, power supplies, fast chargers and USB-PD as well as for a wide range of telecommunications, motor control and other industrial equipment. Designers can choose from a range of 80 V and 100 V devices, with (RDSon) from 1.8 mΩ to 15 mΩ.
Many MOSFET manufacturers focus on achieving high efficiency through low QG(tot) and low QGD, when benchmarking the switching performance of their devices against alternative offerings. However, through extensive research, Nexperia has identified Qrr as being even just as important due to its impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching.
By focusing on this parameter, Nexperia has considerably reduced the level of spiking produced by its NextPower 80/100 V MOSFETs and hence also lowered the amount of EMI they produce. This brings significant benefits for end users by reducing the probability of a costly late-stage redesign to include additional external components if their application fails electromagnetic compatibility (EMC) testing.
The on-resistance (RDSon) of these new MOSFETs has been reduced by up to 31% compared to currently available devices. Nexperia also plans to further strengthen its NextPower 80/100 V portfolio later this year with the release of an additional LFPAK88 MOSFET offering RDS(on) down to 1.2 mΩ @ 80 V, as well as introducing the power dense CCPAK1212 to the portfolio. To further support design-in and qualification of these devices, Nexperia offers the availability of award-winning interactive datasheets, providing engineers with comprehensive and user-friendly insights into device behavior.
Original – Nexperia
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Toshiba Electronic Devices & Storage Corporation has expanded its lineup of 600V N-channel power MOSFETs “DTMOSVI series” fabricated with Toshiba’s latest-generation process, with a super junction structure. These new products are suitable for high efficiency switching power supplies used for data centers and power conditioners of photovoltaic generators. Nine products of “TK40N60Z1, TK080N60Z1, TK080A60Z1, TK085V60Z1, TK125N60Z1, TK125A60Z1, TK130V60Z1, TK155A60Z1 and TK165V60Z1” have been added to the lineup in terms of packages and drain-source On-resistance.
By optimizing the gate design and process, 600V DTMOSVI series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This means new products have a better trade-off between conduction loss and switching loss than current products. New products of DTMOSVI series will contribute improving efficiency of power supplies.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand its DTMOSVI series lineup, and support energy conservation by reducing power loss in switching power supplies.
Original – Toshiba
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According to a survey by Global Market Insights, Super Junction MOSFETs captured over 30% market share in the energy and power sector in 2023. Their applications span multiple domains, including electric vehicle charging stations, server and data center power supplies, LED drivers, solar inverters and home appliance controls.
The global Super Junction MOSFET market is projected to achieve a compound annual growth rate (CAGR) exceeding 11.5% by 2032. Super Junction MOSFETs offers robust assurance to customers seeking exceptional performance and stability backed by WeEn’s well-established reliability standards, comprehensive supply chain systems and continuously evolving technological roadmaps.
WeEn currently offers two series of Super Junction MOSFETs: G1 and G2. G2 Super Junction MOSFETs feature advanced design improvements, such as reduced cell pitch, low-resistance epitaxial layers, and shorter P-column depths. These innovations significantly reduce the device’s on-state resistance.
Simultaneously, WeEn precisely controlled the charge balance of the super junction structure, ensuring excellent avalanche ruggedness and low capacitive losses. This results in a balanced, outstanding performance in both hard and soft-switching applications that demand high efficiency, reliability, and superior thermal management.
The WSJ2M60R065D is one of the flagship products in WeEn’s G2 Super Junction MOSFET lineup. Available in various packages including TO-220, TO-220F, TO-247, and TOLL. It particularly excels in terms of on-state resistance. Compared to competitors’ products, the WSJ2M60R065D maintains more stable on-state resistance across different current densities. Within its maximum continuous current range, the resistance variation does not exceed 10%. This stability provides customers with reliable performance data. Furthermore, the WSJ2M60R065D adapts well to applications with varying power requirements, demonstrating exceptional performance across diverse and complex operating environments.
WeEn’s G2 MOSFETs are at the forefront of performance, with their Figure of Merit (FOM) on par with top global competitors. While ensuring stringent yield and process control, WeEn reserves more breakdown voltage margin for customers. 600V devices approach the standards of 650V devices available on the market, thoroughly safeguarding the reliability of customer applications. Moreover, the G2 MOSFET integrates a finely tuned fast recovery body diode, with a reverse recovery time (Trr) of only 123 ns. The body diode can withstand a commutation speed of 1000 A/μs without damage. This makes the WSJ2M60R065D particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies, delivering high efficiency while handling irregular operating conditions.
However, the WSJ2M60R065D is not limited to soft-switching applications. It also demonstrates excellent performance in hard-switching applications. The WSJ2M60R065D offers significant advantages in terms of lower capacitive losses (Eoss) compared to top competitors. Additionally, its normalized ruggedness is significantly higher than the industry standard, enabling it to withstand higher overvoltage and oscillation. It also demonstrates stable and safe performance in hard-switching topologies such as Power Factor Correction (PFC) circuits.
WeEn consistently adheres to rigorous and reliable quality assessment practices. In accelerated aging tests, the company maintains a zero-tolerance policy for product failures. WeEn MOSFET products demonstrate excellent consistency in performance during high-temperature stress aging tests at 168, 500, and 1000 hours. Furthermore, WeEn conducts additional reviews of the ESD (Electrostatic Discharge) capability of the device to minimize quality issues during production, packaging, and transportation. The WSJ2M60R065D demonstrates a robust quality level with a CDM (Charged Device Model) capability exceeding 2000V and an HBM (Human Body Model) capability of over 4000V.
Original – WeEn Semiconductors
