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Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award for Technology and Innovation, for its development of a new type of energy-saving chip based on the innovative semiconductor material silicon carbide (SiC). The Jury of Deutscher Zukunftspreis has announced the three nominated teams in Munich.
A team of developers from Infineon, together with Chemnitz University of Technology, has succeeded in developing the world’s first silicon carbide MOSFET with a vertical channel (trench MOSFET) and innovative copper contacting in the 3300V voltage class. The new SiC modules and the power converters equipped with the modules represent a revolutionary innovation leap in semiconductor technology from conventional silicon to more energy-efficient silicon carbide, which reduces switching losses in high-current applications by 90%.
MOSFETs are electrical switches for a wide range of applications. Trench MOSFETs differ from so-called planar MOSFETs in their cell structure and performance. While the current flow in planar MOSFETs is initially horizontal, trench MOSFETs offer purely vertical channels. This results in a higher cell density per surface area, which in turn significantly reduces the losses in the chip during energy conversion and therefore increases efficiency.
“The transition towards green energy and many other pressing challenges of our time can only be solved with technological progress,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “It is therefore important to promote and reward innovation and make it visible in society. The ‘Deutscher Zukunftspreis’ is the most important national award that is presented with this aim in mind. The nomination is a great honor for us and proof of the successful research and development work at Infineon. Congratulations to all colleagues involved!”
The CoolSiC™ XHP™2 module family enables significant energy savings, for example in industrial power generation in solar parks or wind turbines, in power transmission and, above all, in end consumption, where high energies in the megawatt range are required. A single train with a silicon carbide drive system can save around 300 MWh per year compared to the previous silicon-based solution. This is roughly equivalent to the annual consumption of 100 single-family homes. Together with drive technology manufacturers and rail operators, Infineon is making an important contribution to decarbonization. At the same time, local residents also benefit from the lower noise level of trains with SiC modules when they pass through residential areas.
Through numerous innovative developments in chip processing and design as well as contacting and module technology, the team led by Dr. Konrad Schraml, Dr. Caspar Leendertz (both Infineon) and Prof. Dr. Thomas Basler (Chemnitz University of Technology) has brought the 3300V CoolSiC XHP2 high-performance module to production readiness. With ten times greater reliability against thermomechanical stress and a significantly higher power density compared to silicon modules, the new silicon carbide module can also be used to electrify large drives in diesel locomotives, agricultural and construction machinery, aircraft and ships, which were previously reserved for fossil fuels. The significantly higher switching frequencies permitted by the new module are helpful, as they enable a significant reduction in weight and volume of the power converters in the application.
“This nomination shows that climate change and sustainable resource consumption have become central aspects of our society,” said Dr. Peter Wawer, Division President Green Industrial Power (GIP) at Infineon. “Innovative energy solutions and power semiconductors are a core component in decarbonization and fighting climate change, as the expert jury of Deutscher Zukunftspreis has recognized. I am proud that we at Infineon can make a significant contribution to a green future with pioneering technology.”
Project manager Dr. Konrad Schraml: “For us as a development team, it is a matter close to our hearts to develop innovative chips that contribute to efficient energy consumption and thus also to green mobility on our planet. This nomination is a great recognition for my team, whose tireless efforts, expertise and passion for sustainability have made the technology breakthrough in silicon carbide possible.”
On November 27, Federal President Frank-Walter Steinmeier presents the Deutscher Zukunftspreis to the winning team in Berlin.
Original – Infineon Technologies
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JEDEC Solid State Technology Association announced the publication of JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices. Developed jointly by JEDEC’s JC-70.1 Gallium Nitride and JC-70.2 Silicon Carbide Subcommittees, JEP200 is available for free download from the JEDEC website.
Proliferation of soft switching power conversion topologies brought about the need to accurately quantify the energy stored in a power device’s output capacitance because the energy impacts efficiency of power converters. JEP200, developed in collaboration with academia, addresses the critical power supply industry need to properly test and measure the switching energy loss due to the output capacitance hysteresis in semiconductor power devices and details tests circuits, measurement methods, and data extraction algorithms. The document applies not only to wide bandgap power semiconductors such as GaN and SiC, but also silicon power transistors and diodes.
“Professionals in high-frequency power conversion systems have long sought a standardized approach to testing new switching energy losses,” said Dr. Jaume Roig, Member of Technical Staff, onsemi and Vice Chair of the JC-70 Committee. “This document now provides helpful guidance on testing energy losses related to output capacitance hysteresis caused by displacement currents. With this clarity, system optimization can proceed more accurately.”
“JEDEC’s JC-70 committee has the expertise necessary to meet the demands of the entire power semiconductor industry, and the development of JEP200 demonstrates how the JEDEC process enabled the committee to swiftly respond to an industry need,” said John Kelly, JEDEC President. “JEP200 encompasses GaN, SiC, and Si power devices, helping the industry navigate design challenges caused by the growing number of new power conversion topologies.”
Original – JEDEC
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Infineon Technologies AG introduced its new StrongIRFET™ 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease-of-use, the new power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications, enabling high design flexibility.
Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS).
The StrongIRFET 2 30 V technology offers up to a 40 percent R DS(on) improvement and up to a 60 percent reduction in Q G compared to the previous generation of StrongIRFET devices. This translates into higher power efficiency for improved overall system performance while providing an excellent robustness.
The new power MOSFETs also ensure an easy design-in and provide simplified product services. The product family’s excellent price/performance ratio makes it an ideal choice for designers looking for convenient selection and purchasing.
The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D²PAK, PQFN and SuperSO8.
Original – Infineon Technologies
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ROHM and United Automotive Electronic Systems Co., Ltd., (UAES), a leading Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices.
Since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the joint SiC technology laboratory at the UAES headquarters in Shanghai, China. And in 2021 ROHM’s advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier.
The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. SiC power devices play a crucial role in enhancing the efficiency and performance of a variety of systems, contributing to extending the cruising range and reducing battery size.
This long-term supply agreement ensures UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules, which have been supplied to customers since November 2023. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of cutting-edge SiC power solutions for EVs.
- Guo Xiaolu, Deputy General Manager, United Automotive Electronic Systems Co., Ltd.
‘The growing popularity of electric vehicles in the Chinese market has made the adoption and integration of power semiconductors like SiC increasingly important. ROHM, a world-renowned semiconductor manufacturer, is a pioneer and market leader in SiC power devices. Since 2015 we have been actively engaged in technical exchanges and highly value ROHM’s proposed solutions encompassing devices and peripheral components. Choosing ROHM as our long-term supplier of SiC chips guarantees a stable supply for future mass production. We appreciate ROHM’s past efforts and look forward to building a long-term collaborative relationship, with this agreement serving as a new starting point.’
- Tsuguki Noma, Corporate Officer and Director of the Power Device Business Unit, ROHM
‘We are very pleased to have signed a long-term supply agreement with UAES, a valued partner with whom we have built a strong cooperative relationship over the years. As a leading Tier 1 manufacturer in China, UAES is at the forefront of advanced application development. To meet the need for SiC power devices that improve efficiency in the rapidly expanding electric vehicle market, ROHM has established a leading development and manufacturing system within the SiC industry. We believe that by working together, both companies can provide cutting-edge, high performance, high quality automotive applications. Moving forward, we will continue to drive technological innovation in electric vehicles together with UAES by offering power solutions centered on SiC.’
History of Technical Collaboration Between ROHM and UAES
- 2015 Initiated technical exchange
- 2020 Established a joint SiC technology laboratory
- 2020 Began mass production of automotive products equipped with ROHM SiC power devices
- 2021 ROHM recognized as a preferred supplier for SiC power solutions
- 2024 ROHM and UAES sign a long-term supply agreement for SiC power devices
Original – ROHM
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Littelfuse, Inc. announced the launch of the IX4341 and IX4342 dual 5 ampere low-side MOSFET gate drivers. These gate drivers are specifically designed for driving MOSFETs and complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input versions, providing customers with a comprehensive range of options.
The IX4341 and IX4342 drivers’ short propagation delay times of 16 nanoseconds and brief rise and fall times of 7 nanoseconds make them ideal for high-frequency applications. Additionally, for higher current requirements, electronics designers can parallel the two channels of the IX4340 and IX4341 devices to form a single 10 A driver, providing flexibility and scalability.
A notable feature of the IX434x drivers is their compatibility with TTL and CMOS logic inputs, enabling direct interfacing with most controllers. Furthermore, each output has an independent ENABLE function and under-voltage lockout circuitry (UVLO) to ensure reliable and safe operation. In case of eventual insufficient supply voltage, the gate driver output is asserted low, turning the external power device off.
The IX4341 and IX4342 dual 5 A low-side gate drivers find applications in various markets, including:
- general industrial and electrical equipment,
- appliances,
- building solutions,
- data centers,
- energy storage, and
- renewable energy.
These low-side MOSFET gate drivers are ideally suited for numerous industrial applications such as:
- switch-mode power supplies,
- DC-DC converters,
- motor controllers, and
- power converters.
The IX434x devices are available in standard 8-pin SOIC, thermally enhanced 8-pin SOIC, and 3×3 mm² MSOP packages, offering customers a range of options to suit their specific needs.
“This new series of dual five-ampere low-side gate drivers simplify circuit design with its high level of integration and compatibility with various logic input versions,” said June Zhang, Product Manager, Integrated Circuits Division, Semiconductor Business Unit, at Littelfuse. “With these drivers, customers can expect enhanced performance and protection for their power devices.”
The IX434x dual 5 A low-side gate drivers find applications in various industries, including general industrial and electrical equipment, appliances, building solutions, data centers, energy storage, and renewable energy.
They serve as a direct drop-in alternative to similar available drivers, providing customers with industry-standard options to meet their supply demands.
Original – Littelfuse
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Navitas Semiconductor announced the release of a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.
Navitas’ proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature and delivers high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC offers an operating life up to 3x longer than alternative SiC products, for high-stress EV environments.
Gen-3 Fast MOSFETs are optimized for the fastest switching speed, highest efficiency, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas’ dedicated EV Design Center has demonstrated leading edge OBC system solutions up to 22 kW with 3.5 kW/liter power density, and over 95.5% efficiency.
400 V-rated EV battery architectures are served by the new 650 V Gen-3 Fast MOSFETs featuring RDS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.
Both 650 and 1,200 V ranges are AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH ensures excellent fast-switching performance and lowest dynamic package losses.
The automotive-qualified 650 V and 1200 V G3F SiC MOSFET family in D2PAK-7L and TOLL surface mount packages are released and available immediately for purchase.
Original – Navitas Semiconductor
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MCC Semi rolled out three new 600V MOSFETs that go beyond high performance. Designed with an integrated fast recovery diode, these advanced components help solve the challenges engineers face when trying to maximize efficiency while minimizing power losses and heat generation.
Ideal for high-voltage applications, MSJWFR60N60, MCTK075N60FH, and MCTK105N60FH feature on-resistance in the sub-100mΩ range — with options as low as 30mΩ — to significantly reduce conduction losses and ensure efficient power delivery.
A low gate charge only adds to their excellence, especially in high-frequency applications where response times are critical. Available in a through-hole TO-247 package and space-saving SMD TOLL-8L options with a Kelvin source connection, these MOSFETs offer a versatile solution for enhancing overall system performance.
Improve reliability for various applications, such as power supplies, AC-DC converters, motor drives, and renewable energy systems, with these low RDS(on) semiconductors from MCC.
Features & Benefits:
- Superjunction MOSFET technology: Enhances efficiency and reduces power losses
- Low on-resistance: Minimizes conduction losses for improved performance
- Low conduction losses: Ensures greater efficiency in power applications
- Low gate charge: Facilitates faster switching and reduced energy consumption
- Integrated fast recovery diode: Provides rapid recovery for better switching performance
- High-speed switching: Supports high-frequency operations, perfect for modern applications
- Versatile packages: Enables design flexibility with through-hole (TO-247) and SMD with Kelvin Source (TOLL-8L-KS) options
Original – Micro Commercial Components
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onsemi released the newest generation silicon and silicon carbide hybrid Power Integrated Modules (PIMs) in an F5BP package, ideally suited to boost the power output of utility-scale solar string inverters or energy storage system (ESS) applications. Compared to previous generations, the modules offer increased power density and higher efficiencies within the same footprint to increase the total system power of a solar inverter from 300kW up to 350kW.
This means a one-gigawatt (GW) capacity utility-scale solar farm using the latest generation modules can achieve an energy savings of nearly two megawatts (MW) per hour or the equivalent of powering more than 700 homes per year. Additionally, fewer modules are required to achieve the same power threshold as the previous generation, which can reduce power device component costs by more than 25%.
With solar power having achieved the lowest levelized cost of energy (LCOE), it is increasingly becoming the go-to source for renewable power generation around the world. To compensate for solar power’s variability, utility operators are also adding large-scale battery energy storage systems (BESS) to ensure a stable energy flow to the grid. To support this combination of systems, manufacturers and utilities require solutions that offer maximum efficiency and reliable power conversion. Every 0.1% of efficiency improvement can equate to a quarter of a million dollars in annual operational savings for every one gigawatt of installed capacity.
“As a variable energy source dependent on sunlight, continual advances in increasing system efficiencies, reliability and advanced storage solutions are needed to be able to maintain the stability and reliability of global grids during peak and off-peak power demand,” said Sravan Vanaparthy, vice president, Industrial Power Division, Power Solutions Group, onsemi. “A more efficient infrastructure increases adoption and assures us that, as more solar power generation is built out, less energy is wasted and pushes us forward on a path away from fossil fuels.”
The F5BP-PIMs are integrated with 1050V FS7 IGBT and the 1200V D3 EliteSiC diode to form a foundation that facilitates high voltage and high current power conversion while reducing power dissipation and increasing reliability. The FS7 IGBTs offer low turn-off losses and reduce switching losses by up to 8%, while the EliteSiC diodes provide superior switching performance and lower voltage flicker by 15% compared to previous generations.
These PIMs employ an innovative I-type Neutral Point Clamp (INPC) for the inverter module and a flying capacitor topology for the boost module. The modules also use an optimized electrical layout and advanced Direct Bonded Copper (DBC) substrates to reduce stray inductance and thermal resistance. In addition, a copper baseplate further decreases thermal resistance to the heat sink by 9.3%, ensuring the module remains cool under high operational loads. This thermal management is crucial in maintaining the efficiency and longevity of the modules, making them highly effective for demanding applications that require reliable and sustained power delivery.
Original – onsemi
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MCC Semi unveiled a new 950V MOSFET – MCU1K4N95SH. While traditional MOSFETs often include energy losses and slower switching, this new superjunction (SJ) MOSFET features a low gate-to-drain charge, significantly reducing conduction losses and amplifying overall efficiency.
Its superjunction MOSFET technology and on-resistance of only 1.49Ω empower engineers to design for higher voltage ratings without compromising performance. A DPAK (TO-252) package only adds to this MOSFET’s versatility, making it ideal for AC-DC power supplies, LED lighting, charging adapters, solar and energy devices, and other high-voltage applications across multiple industries.
Features & Benefits:
- Superjunction (SJ) MOSFET technology enhances efficiency
- High-voltage rating of 950V is well-suited for demanding applications
- Low gate charge enables faster switching speeds
- High-speed switching capabilities improve overall performance
Original – Micro Commercial Components
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Alpha and Omega Semiconductor Limited (AOS) announced its new highly robust power MOSFET LFPAK 5×6 package. AOS’s new LFPAK product offering is available in a wide range of voltages: 40V, 60V, and 100V, and it is designed to withstand harsh environments while maintaining MOSFET performance. The new devices are found in a broad range of applications such as industrial, server power, telecommunications, and solar, where high reliability is required.
AOS’s LFPAK packaging enables higher board-level reliability due to key packaging features such as gull wing leads, which offer a ruggedized solution for board-level environmental stresses. The gull-wing leads also enable optical inspection during PCBA manufacturing. Another feature enhancement is the LFPAK’s larger copper clip, which improves electrical and thermal performance. Advantages of the large clip include improved current handling capabilities, reduced on-resistance, and better heat dispersion compared to wire bonding. A large clip also has low parasitic inductance, enabling lower spike voltage in switching applications. All these features significantly improve the robustness of the MOSFET, and utilizing AOS’s advanced shielded gate MOSFET Technology (AlphaSGT™) enables designers to find an optimized solution to achieve high reliability under the harshest environmental conditions.
“Designers have long trusted AOS power semiconductors in their applications, and LFPAK 5×6 will expand
solution capability,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.Original – Alpha and Omega Semiconductor
