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LATEST NEWS / PRODUCT & TECHNOLOGY2 Min Read
In a significant advancement for the high-voltage power electronics industry, Maspower Semiconductor has introduced the MS2N300HGC0 MOSFET, a powerful new component that sets new benchmarks in performance and reliability.
This cutting-edge product, housed in the TO-247 package, offers unprecedented performance with its robust 3000V voltage rating and 2A continuous current capability. What truly sets this MOSFET apart, however, is its rigorous testing and certification. The MS2N300HGC0 has undergone 100% avalanche testing, ensuring exceptional resilience and durability in demanding applications.
Moreover, the MS2N300HGC0’s Fast Intrinsic Diode design and minimized gate charge contribute to its high-speed switching capabilities, making it a perfect fit for high-voltage power supplies, PV inverters, switching applications and more. Its very low intrinsic capacitance further enhance its performance, delivering maximum efficiency and reliability. Maspower’s commitment to innovation and reliability is evident in the MS2N300HGC0, which has been rigorously tested and certified to meet the highest industry standards.
“The MS2N300HGC0 is a testament to our commitment to pushing the boundaries of high-voltage power electronics,” said a spokesperson from Maspower. “We are proud to offer this state-of-the-art MOSFET to our customers, enabling them to achieve unprecedented levels of performance and reliability in their applications.”
Original – Maspower Semiconductor
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PANJIT introduced its latest 60, 100, and 150V AEC-Q101 qualified MOSFETs, engineered with advanced trench technology to set new standards in performance and efficiency. Designed for both automotive and industrial power systems, these MOSFETs offer unparalleled figure of merit (FOM), significantly lower RDS(ON), and reduced capacitance. This ensures minimal conduction and switching losses, resulting in enhanced overall electrical performance.
The new MOSFET series is available in various packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA and TO-220AB-L. These compact packages facilitate efficient design solutions for modern electronic systems. With an operating junction temperature of up to 175°C, these MOSFETs are robust and reliable, further evidenced by their AEC-Q101 qualification.
These MOSFETs are ideal for various automotive applications, including wireless charging transmitters, battery management systems, front and rear lighting systems, DC/DC converters, infotainment systems and more. Their low on-resistance and high efficiency enhance the performance and reliability of these systems. Additionally, their versatility extends to industrial power systems, broadening their range of applicability and utility.
PANJIT’s new automotive-grade MOSFET series delivers superior performance, reliability, and efficiency. These MOSFETs are set to become a cornerstone in the design of next-generation automotive and industrial systems.
Original – PANJIT International
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG3 Min Read
Littelfuse, Inc. announced the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
The key differentiator of the IX4352NE lies in its separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. With an operating voltage range (VDD – VSS) of up to 35 V, this driver offers exceptional flexibility and performance.
One of the standout features of the IX4352NE is its internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input’s compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities.
The IX4352NE is ideally suited for driving SiC MOSFETs in various industrial applications such as:
- on-board and off-board chargers,
- Power Factor Correction (PFC),
- DC/DC converters,
- motor controllers, and
- industrial power inverters.
It’s superior performance makes it ideal for demanding power electronics applications in the electric vehicle, industrial, alternate energy, smart home, and building automation markets.
With its comprehensive features, the IX4352NE simplifies circuit design and offers a higher level of integration. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD) ensure the protection of the power device and the gate driver. The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability. Furthermore, the IX4352NE saves valuable PCB space and increases circuit density, contributing to overall system efficiency.
Notable improvements over the existing IX4351NE include:
- A safe DESAT-initiated soft turn-off.
- A thermal shutdown with high threshold accuracy.
- The charge pump’s ability to operate during thermal shutdown.
The new IX4352NE is pin-compatible, allowing for a seamless drop-in replacement in designs that specify the existing Littelfuse IX4351NE, which was released in 2020.
“The IX4352NE extends our broad range of low-side gate drivers with a new 9 A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs,” commented June Zhang, Product Manager, Integrated Circuits Division (SBU) at Littelfuse. “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage for improved dV/dt immunity and faster turn-off. As a result, it can be used to drive any SiC MOSFET or power IGBT, whether it is a Littelfuse device or any other similar component available on the market.”
Original – Littelfuse
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si3 Min Read
To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 % while providing higher current in a smaller footprint than devices in the D²PAK package.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, super computers, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR package features a 50.8 % smaller footprint than the D²PAK while offering a 66 % lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25 °C/W.
This allows for 46 % higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the package’s gullwing leads provide excellent temperature cycle capability.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHR080N60E features low typical on-resistance of 0.074 Ω at 10 V and ultra low gate charge down to 42 nC. The resulting FOM is an industry-low 3.1 Ω*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems > 2 kW.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package also provides a Kelvin connection for improved switching efficiency.
The device is RoHS-compliant and halogen-free, and it is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
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Magnachip Semiconductor Corporation announced the release of its new 40V MXT MV MOSFET. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications.
As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.
Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip’s power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.
Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.
“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”
Original – Magnachip Semiconductor
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MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.
Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems.
These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C.
Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.
Features & Benefits:
- Fully AEC-Q101 qualified
- Split-gate trench (SGT) technology
- Low RDS(on)
- High power density package
- High junction temperature up to 175℃
- Available in compact DPAK and D2PAK packages
Original – Micro Commercial Components