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Navitas Semiconductor will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th – 10th).
The “Planet Navitas” suite will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors. These technologies are designed for high growth markets that demand the highest efficiency and power density, such as AI data centers, electric vehicles (EVs), and mobile. Additionally, Navitas will demonstrate how GaN and SiC technologies contribute to reducing carbon-footprint, with the potential to save over 6,000 megatons of CO2 per year by 2050.
Major technology and system breakthroughs include:
- World’s only 650V bi-directional GaNFast™ power ICs: Game-changing, disruptive GaN technology for next-generation solutions that require the highest efficiency and power density, with the lowest complexity, and significant component reduction.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
- GeneSiC MOSFET die specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- Sustainable Solutions: Discover Navitas’ vision to reduce up to 6 Gtons/year of CO₂ by 2050 with technologies that offer higher efficiency, density, and grid independence.
CES 2025 takes place in Las Vegas, NV from January 7th – 10th. The “Planet Navitas” suite is located in Tech West at the Venetian, suite 29-335.
Original – Navitas Semiconductor
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Navitas Semiconductor announced that Dr. Ranbir Singh, formerly Executive Vice President at Navitas and the founder and CEO of GeneSiC Semiconductor, has been appointed to Navitas’ board of directors.
“We are pleased to welcome Ranbir to the board of directors,” said Gene Sheridan, Chairman, President and CEO. “Ranbir has led the industry with over 30 years of SiC innovation as the founder and CEO of GeneSiC; and 8 years prior to that at Wolfspeed (formerly Cree, Inc.) and brings deep industry knowledge to the board. We look forward to his contributions as we grow our business with next-generation, clean-energy power for an efficient and sustainable future.”
Dr. Singh joined Navitas with the acquisition of GeneSiC Semiconductor, which he founded in 2004. Dr. Singh has dedicated his life to the mission of high-performance, high-reliability silicon carbide technology, and is highly respected in the power electronics community, with several awards, over 200 journal and conference papers, a book and over 40 US patents.
“I am excited to be joining the Navitas board at this pivotal moment as the company leads technical innovation with disruptive, wide band-gap technology, into fast-growing AI, EV and Mobile markets,” said Dr. Singh. “Navitas is executing a significant transformation in the semiconductor industry, and it is an honor to have the opportunity to continue to contribute to the company’s growth and innovation.”
Dr. Singh holds a Bachelor of Technology, Electrical Engineering from the Indian Institute of Technology, Delhi, and both Master’s and PhD in Electrical Engineering – Power Semiconductors, from North Carolina State University (NCSU), Raleigh. He was inducted into NCSU’s Department of Electrical and Computer Engineering (ECE) Alumni Hall of Fame in 2022.
Original – Navitas Semiconductor
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Navitas Semiconductor announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500™. Navitas growth was driven by strong demand for its advanced, high-efficiency, wide-bandgap gallium nitride (GaN) and silicon carbide (SiC) power components, across a growing number of global markets and customers.
Now in its 30th year, the Deloitte Technology Fast 500 provides a ranking of the fastest-growing technology, media, telecommunications, life sciences, fintech, and energy tech companies — both public and private — in North America. Based on percentage fiscal year revenue growth from 2020 to 2023, Navitas achieved 571% growth as GaN and SiC technology enabled efficient, sustainable applications and displaced legacy silicon chips.
“As a ‘pure-play’, next-gen, semiconductor company, Navitas continues to outperform the overall power semiconductor market, with record sales into mobile fast chargers, now ramping AI data center revenues and a strong customer pipeline for EV opportunities,” said Gene Sheridan, CEO and co-founder. “Recent introductions like GaNSafe™, Gen-3 ‘Fast’ SiC, and a newly-announced, 48V-focused range in partnership with Infineon, have built a strong foundation for further revenue growth in applications from 20W to 20MW, and with a market opportunity of over $22B per year.”
Original – Navitas Semiconductor
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Navitas Semiconductor has announced the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centers.
The AI-optimized 54V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe and Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies, to ensure the highest efficiency and performance, with lowest component count. The PSU’s shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables the industry’s lowest ripple current and EMI.
Furthermore, the PSU reduces the number of GaN and SiC devices by 25% compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 Vac, a standby output voltage of 12 V, and an operating temperature range of -5oC to 45oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.
The 3-Phase LLC topology is enabled by high-power GaNSafe, which is specifically created for demanding, high-power applications, such as AI data centers and industrial markets. Navitas’ 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of RDS(ON)MAX from 25 to 98 mΩ.
The 3-Phase interleaved CCM TP-PFC is powered by Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology, which has been enabled by over 20 years of SiC innovation leadership and offers world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
“This complete wide bandgap solution of GaN and SiC enables the continuation of Navitas’ AI power roadmap which enables this 8.5kW and plans to drive to 12kW & higher in the near-term”, said Gene Sheridan, CEO and co-founder of Navitas. “As many as 95% of the world’s data centers cannot support the power demands of servers running NVIDIA’s latest Blackwell GPUs, highlighting a readiness gap in the ecosystem. This PSU design directly addresses these challenges for AI and hyperscale data centers.”
The PSU will be on display for the first time at Electronica 2024 (Hall C 3, booth 129, November 12th– 15th).
Original – Navitas Semiconductor
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Navitas Semiconductor announced unaudited financial results for the third quarter ended September 30, 2024.
“I’m pleased to announce record sales in the mobile fast-charger market plus a completely new GaN platform for 48V AI data centers, EV and AI robotics applications in conjunction with a new, strategic, dual-sourcing partnership with Infineon,” said Gene Sheridan, CEO and co-founder.
`“Despite macro-economic challenges, we continue to grow faster than the market, and the new, low-voltage GaN platform not only opens up new strategic markets, but also brings customers dual-sourcing options from Navitas and Infineon for added confidence to accelerate adoption of GaN into new mainstream, high-volume applications.”
The company also announced a cost-reduction plan that is expected to save $2 million per quarter and streamline the organization with increased focus on AI data center, EV and mobile applications, accelerating the company’s path to profitability. The plan includes a 14% reduction in headcount (approximately 45 employees).
3Q24 Financial Highlights
- Revenue: Total revenue was $21.7 million in the third quarter of 2024, compared to $22.0 million in the third quarter of 2023, and $20.5 million in the second quarter of 2024.
- Loss from Operations: GAAP loss from operations for the quarter was $29.0 million, compared to a loss of $28.6 million for the third quarter of 2023 and a loss of $31.1 million for the second quarter of 2024. On a non-GAAP basis, loss from operations for the quarter was $12.7 million compared to a loss of $8.7 million for the third quarter of 2023, and a loss of $13.3 million in the second quarter of 2024.
- Cash: Cash and cash equivalents were $98.6 million as of September 30, 2024.
Market, Customer and Technology Highlights
- New, Low-voltage (LV) GaN Platform (80-200V): Optimized for 48V systems in AI data center, EV, and motor drive, sampling in Q4 2024, with strategic dual-sourcing partnership with Infineon Technologies. Common specifications (packaging, pin-out, footprint and IP) to accelerate customer adoption of GaN into high-volume, mainstream applications.
- AI Data Center: New 98%-efficient, 8.5 kW AI power supply reference design with high-voltage (HV) GaN+SiC architecture launched as well as proprietary IntelliWeave™ PFC control technique to deliver extreme power density demanded by NVIDIA’s Hopper-Blackwell-Rubin AI GPU roadmap. High-voltage GaNSafe power ICs and Gen-3 ‘Fast’ SiC devices are featured in over 60 active customer projects with direct customers such as Delta, GreatWall, Compuware and LiteON, supplying end-users like AWS, Azure and Google. Our data center production revenues started in Q3 as expected and will continue ramping throughout 2025.
- EV: Leading-edge, trench-assisted, planar-gate Gen-3 ‘Fast’ SiC devices now fully AEC Q101 (automotive) qualified and pushing beyond. Six new on-board and road-side charger design wins in Q3, expected to ramp in 2025 and 2026. Largest pipeline segment, with 200+ projects. New, LV GaN platform optimized for 48V battery EV applications.
- Mobile & Consumer: GaNSlim ICs achieved another 26 design wins in Q3. Three new tier-1 OEM wins expected to deliver revenue ramping Q2’25, adding to the Samsung wins announced in August.
- Appliance & Industrial: Thirty new design wins in Q3, ranging from vacuum cleaners and LED lighting, to solid-state, grid-connected circuit-breakers, multi-kW power supplies and heat pumps. New, LV GaN platform addresses 48V industrial motor drives including AI robotics.
- Solar & Energy Storage: Ten design wins, including at Generac, expected to ramp mid-2025. Next-gen GaN ICs – including Navitas-proprietary, industry-leading bi-directional GaN ICs – continue on track for significant mid-2025 ramp in solar micro-inverters. New, LV GaN doubles TAM in inverters, as complement to HV GaN and SiC.
Fourth quarter 2024 net revenues are expected to be between $18.0 and $20.0 million. Non-GAAP gross margin for the fourth quarter is expected to be 40% plus or minus 50 basis points and non-GAAP operating expenses are expected to be approximately $20.5 million in the fourth quarter of 2024.
Original – Navitas Semiconductor
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Navitas Semiconductor will showcase its latest innovations at the 2024 China Power Electronics and Energy Conversion Conference and the 27th Annual Academic Conference and Exhibition of the China Power Supply Society (CPEEC & CPSSC 2024), held in Xi’an from November 8th – 11th, 2024.
At ‘Planet Navitas’ (Booth 3-011), visitors can discover the AI Power Roadmap, which showcases the world’s first 8.5 kW OCP AI data center power supply implementing GaNSafe and Gen-3 Fast SiC MOSFETs, alongside the highest power density 4.5 kW AI data center power supply on the planet. Navitas also developed the ‘IntelliWeave’ patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs, optimized for AI data center power supplies, enabling PFC peak efficiencies to 99.3% and reducing power losses by 30% compared to existing solutions.
Additionally, industry-leading solutions include a 6.6kW 2-in-1 EV on-board charger (OBC) utilizing a hybrid GaNSafe and GeneSiC design and fast-charging solutions for consumer electronics with the latest GaNSlim family.
The new GaNSlim family offers a highly integrated GaN solution with autonomous EMI control and loss-less sensing that enables the industry’s fastest, smallest, and most efficient solution in an optimized DPAK-4L package, ideal for mobile, consumer, and home appliance applications up to 500 W.
Enabled by over 20 years of SiC innovation leadership, GeneSiC technology leads on performance with the Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support up to 3x more powerful AI data centers and faster charging EVs.
As China’s premier power electronics event, CPSSC gathers industry leaders, researchers, and enterprises to explore breakthrough technologies shaping the future of power electronics. This year’s focus is on high-efficiency, high-power density solutions. “CPSSC is a key platform to showcase Navitas’ role in advancing power electronics,” said Charles Zha, VP & GM of Navitas China. “Our GaNSafe, GaNSlim, and Gen-3 Fast SiC technologies highlight our commitment to enabling higher efficiency, faster charging, and more powerful applications, aligning with CPSSC’s vision of powering the future.”
Navitas will also present technical papers and host industrial sessions, sharing insights into GaN and SiC technologies and their real-world applications.
Navitas’ CPSSC 2024 Program Highlights:
- November 10
- Paper Presentation:
Research on Parasitic False Turn-On Behaviour of SiC MOSFETs with 0V Turn-Off Gate Voltage
13:20-13:40 | Xiangyang Zhou, Bin Li, Xiucheng Huang, Jason Zhang - Industrial Session:
Bi-Directional GaN for Improving Efficiency in Micro-Inverters
14:30-15:00 | Simon Qin, Sr. Staff Application Engineer
- November 11
- Technical Presentation:
Achieving 99.4% Efficiency in GaN-based Interleaving CrM TTP PFC
08:30-09:00 | Wenhao Yu, Sr. Application Engineer - Technology Showcase:
GaNSlim IC: Redefining Efficiency in Cost-Effective Power Supplies
10:20-10:50 | Ye Hu, Technical Marketing Manager - Industry Insights:
Opportunities and Challenges of Single-Stage Converters for On-Board Chargers
13:00-13:30 | Justin Zhu, Sr. Technical Marketing Manager
Original – Navitas Semiconductor
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Navitas Semiconductor announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th– 15th).
Aligned with the mission to ‘Electrify our World™’, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for AI data centers, EV transportation, renewable energy, industrial drives, and consumer appliances. Each example highlights end-user benefits such as higher power density, increased efficiency, longer range, faster charging, portability, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.
Major technology updates include the world’s first 8.5 kW power supply for AI and hyperscale data centers, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.
Enabled by over 20 years of SiC innovation leadership, GeneSiC technology offers world leading performance over temperature to provide cool-running, fast-switching SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs.
The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology offering leading performance, while also providing superior robustness, manufacturability and cost than competition. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Also on display will be the company’s latest development of GaNSense™ Motor Drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK™ modules for high-power markets such as power grid, renewables, EV charging, and UPS.
In addition to the exhibition, the company’s Llew Vaughan-Edmunds will take part in the EETimes panel debate ‘SiC & GaN Technologies – Exploring Advancements, Addressing Challenges’ (November 12th, 2:20 pm local time). This debate will examine both recent and upcoming advances that will increase wide bandgap technologies’ share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30% share of the power semi market by 2027.
electronica 2024 takes place at Trade Fair Center Messe München, Am Messesee 2, 81829 Munich, from November 12th – 15th. “Planet Navitas” is featured in Hall C3, booth #129.
Original – Navitas Semiconductor
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At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor introduced conference attendees to ‘IntelliWeave’ – an innovative patented new digital control technique for improving next generation AI data center power supply (PSU) efficiency.
In a world where ever-more energy is needed for the processing of artificial intelligence (AI) and cloud-based applications, minimizing power consumption has become a priority for data center architects and operators. Combining next-generation GaN and SiC semiconductors with new control technique strategies to power conversion plays a key role in achieving this goal.
IntelliWeave’s novel digital control enables highest system efficiencies with precision current sharing, ultra-fast dynamic response and minimal phase error. A patented dual-loop and dual-feed-forward interleaving control achieves absolute zero voltage switching (ZVS) across the full-load range to enable highest efficiencies.
The digital control for Critical Conduction Mode (CRM) interleaving Totem Pole Power Factor Control (PFC) enables 30% reduction in power losses compared to existing Continuous Conduction Mode (CCM) solutions. The digital control combined with high-power GaNSafe power ICs has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU operating at 99.3% peak efficiency including EMI filter loss.
Taking place in Phoenix, Arizona from October 20th to 24th, IEEE ECCE 2024 features both industry-driven and application-oriented technical sessions and brings together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion.
On October 21st Tao Wei presented “Novel digital control for a GaN-based CrM interleaved TP PFC”.
Original – Navitas Semiconductor
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Navitas Semiconductor announced GaNSlim™, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance.
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup.
Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI.
GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc.
“Our GaN focus is on integrated devices that enable high-efficiency, high-performance power conversion with the simplest designs and the shortest possible time-to-market,” says Reyn Zhan, Sr. Manager of Technical Marketing. “Our new GaNSlim portfolio – built on integration, ease-of-use, and low-cost manufacturing methods, – continues to grow the customer pipeline with over 50 new projects already identified. GaNSlim increases our GaN addressable market by enabling lower system costs compared to silicon designs for many applications, targeting applications under 500 W across mobile, consumer and home appliance.”
Devices in the NV614x GaNSlim family are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.
As with other Navitas GaN ICs, GaNSlim devices are supplied with an industry-leading twenty-year warranty, while demo boards for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs allow for rapid evaluation and selection of the optimum device for a given application.
Original – Navitas Semiconductor
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Navitas Semiconductor announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.
The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers, solar/energy storage, and industrial markets. Navitas 4th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin.
The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.
“With over 200 million units shipped and supplied with a 20-year warranty, Navitas’ highly integrated high-power GaNSafe ICs are proven to deliver performance and reliability while simplifying Design-IN for systems up to 22kW,” says Charles Bailley, Senior Director of Business Development. “As the most protected, reliable, and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW. Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance, efficiency, power density, and reliability in even the most demanding applications.”
Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of RDS(ON)MAX from 25 to 98 mΩ. Integrated features and functions include:
- High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350 ns / 50 ns latency.
- Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
- Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
- 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.
- Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)
- Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
- Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional VCC pin
- Robust, thermally enhanced packaging: ultra-low RQ_JUNC-AMB and board-level thermal cycling (BLTC) Reliability
In addition to the new ICs, Navitas will be offering reference design platforms based on GaNSafe TOLT for applications including data center power supplies and EV on-board chargers. These system platforms include complete design collateral with fully tested hardware, embedded software, schematics, bill-of-materials, layout, simulation, and hardware test results.
Original – Navitas Semiconductor
