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Navitas Semiconductor announced its participation in the Power Semiconductor User Forum, organized by WEKA Fachmedien on November 22nd -23rd, 2023. The event offers valuable insights into power electronics for developers and technical buyers.
Alfred Hesener, Senior Director of Industrial and Consumer Applications will explore “Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies,” on November 23rd at 1:45 p.m. CET. Mr. Hesener will highlight next-generation solutions that achieve high power densities, cool operation, robust performance using Navitas’ GaNSense single and Half-Bridge power ICs.
Navitas’ GaNFast power ICs integrate GaN power and drive with control, sensing, and protection to enable faster charging, higher power density, greater energy savings and system cost reduction. In addition, each GaN power IC saves over 4 kg CO2 due to higher efficiency and dematerialization. New ‘Gen-3 Fast’ GeneSiC MOSFETs have up to 50% improved performance vs. other SiC devices, and save over 40 kg CO2 per unit vs. legacy silicon IGBTs.
“For industrial power designers, the WEKA forum highlights leading-edge, reliable technology for drives, pumps, chargers and power conversion, using GaN and SiC,” said Mr. Hesener. “Features like loss-less current sensing, programmable dV/dt, 2 kV ESD protection and autonomous sensing and protection are key enablers, and reduce time to market.”
WEKA Fachmedien’s Power Semiconductor User Forum 2023 will be held from November 22nd-23rd at the Novotel Messe Munich, Willy-Brandt-Platz 1, 81829 München, Germany.
Original – Navitas Semiconductor
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Navitas Semiconductor has announced that the company has been ranked 72nd on this year’s North American Deloitte Technology Fast 500™. This is the second year running that Navitas has been featured, improving from 75th to 72nd place, with increased revenue driven by strong demand for its advanced, high-efficiency, wide bandgap (WBG) gallium nitride (GaN) and silicon carbide (SiC) power components, across a growing number of global markets and customers.
Now in its 29th year, the Deloitte Technology Fast 500 is an independent ranking of the 500 fastest-growing technology, media, telecommunications, life sciences, fintech, and energy tech companies in North America. Based on percentage fiscal year revenue growth from 2019 to 2022, Navitas achieved 2,129% growth as GaN and SiC technology enabled efficient, sustainable applications and displaced legacy silicon chips.
Commenting on this year’s ranking, Navitas founder and CEO Gene Sheridan stated: “Our next-gen power-semi technologies are creating significant growth opportunities as we displace silicon in existing multi-$B markets like data centers, consumer, appliance and mobile applications. They also enable new-energy markets that are adopting GaN and SiC from the start, like EV, energy storage and renewable segments.
When combined, the growth results are extraordinary, and we appreciate the recognition of the Deloitte Fast 500 listing. We have built a strong foundation for further growth with established 3x-5x capacity increases, technology generational upgrades every 12-18 months, and a customer-focused, complete power-system design center approach, for applications from 20 W to 20 MW addressing a $22B per year opportunity.”
Original – Navitas Semiconductor
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Navitas Semiconductor Corporation announced unaudited financial results for the third quarter ended September 30, 2023.
“I am pleased to announce another record quarter for Navitas as our gallium nitride and silicon carbide technologies continue to displace legacy power silicon in traditional markets and enable and accelerate new energy markets,” said Gene Sheridan, CEO and co-founder. “It’s a very exciting time at Navitas as we launch four major new technology platforms across GaN and SiC. We expect Navitas’ revenues to far exceed market growth rates in 2024 and for years to come.”
Financial Highlights
- Revenue: Total revenue grew to $22.0 million in the third quarter of 2023, a 115% increase from $10.2 million in the third quarter of 2022 and a 22% increase from $18.1 million in the second quarter of 2023.
- Gross Margin: GAAP gross margin for the third quarter of 2023 was 32.3%, impacted by inventory adjustments, compared to 3.8% in the third quarter of 2022 and 41.5% for the second quarter of 2023. Non-GAAP gross margin for the third quarter of 2023 was 42.1% compared to 38.4% for the third quarter of 2022 and 41.5% for the second quarter of 2023.
- Loss from Operations: GAAP loss from operations for the quarter was $28.6 million, compared to a loss of $37.4 million for the third quarter of 2022 and a loss of $27.2 million for the second quarter of 2023. On a non-GAAP basis, loss from operations for the quarter was $8.7 million compared to a loss of $10.3 million for the third quarter of 2022 and a loss of $9.6 million for the second quarter of 2023.
- Cash: Cash and cash equivalents were $176.7 million as of September 30, 2023.
Market, Customer and Technology Highlights
GaN is moving from a beachhead to the mainstream for mobile fast chargers, with continued strength and upside led by major China OEMs Xiaomi and Oppo. We expect 30% of their total mobile charger shipments in 2024 will utilize GaN, and GaN has been adopted by Samsung for the latest Galaxy S23 and other models, contributing to Q3 and expected Q4 2023 revenue ramp. New Gen-4 GaNSense™ half-bridge ICs, targeting ultra-fast chargers of 100 W or more, are projected to contribute another $10 million per year in revenue ramping in 2024. The new GaNSense products replace dozens of components with a single GaN IC and enable switching frequencies up to 2 MHz to reduce footprint and simplify designs.
Launched in September, GaNSafe™ is the world’s most-protected, most-reliable and highest-performance GaN power semiconductor, with advanced sensing, protection, higher-power capability and cool operation. GaNSafe breaks the glass ceiling for GaN to enter high-power, high-reliability markets like AI data centers, solar, EV and industrial. GaNSafe power ICs are featured in a new 6.6 kW, 800 V on-board charger (OBC) platform from Navitas’ dedicated EV system design center, setting industry benchmarks in system efficiency, density and cost, and attracting significant customer interest. The OBC is a ‘hybrid’ platform, featuring GaNSafe and a new, Gen-3 Fast (G3F) GeneSiC™ MOSFET platform, with leading-edge silicon carbide power and switching performance up to 50% better than competition.
Rapid AI adoption has created unprecedented demand for more power, higher efficiency and greater power density. Navitas’ data center design center has developed a new 4.5 kW AC-DC system platform design, with efficiency exceeding the 96% ‘Titanium Plus’ standard, and with twice the power density of previous, best-in-class, legacy silicon designs. GaNSafe and Gen-3 Fast SiC are again used to optimize these high-power applications, with significant growth in the number of customer pipeline projects.
Solar, appliance and industrial markets also show robust growth in the customer pipeline, with broad interest in the new Gen-3 Fast MOSFETs. The Gen-4 GaNSense half-bridge portfolio now includes new application-specific ICs for motor drives, compressors and pumps up to 1 kW, with sensing, autonomy and programming functionality for easy EMI.
Q4 2023 will also see the introduction of a new, breakthrough innovation: ‘bi-directional’ GaN. Each GaN power IC will replace up to four discrete power transistors, dramatically reducing component count, cost and complexity, and delivering major speed and efficiency benefits. Bi-directional GaN technology is expected to usher in major advances in energy storage, grid infrastructure, motor drives and many other emerging topologies and architectures across multiple markets.
Business Outlook
Fourth quarter 2023 net revenues are expected to increase to $25.0 – $26.0 million. Gross margin for the fourth quarter is expected to expand to 42.5%, plus or minus 30 basis points, and operating expenses, excluding stock-based compensation and amortization of intangible assets, are expected to be approximately $20.0 million in the fourth quarter of 2023. Weighted-average basic share count is expected to be approximately 179 million shares for the fourth quarter of 2023.
Original – Navitas Semiconductor
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Navitas Semiconductor announced another GaNFast win at Samsung, this time a new 25W charger for the flagship Galaxy S23 smartphone. Gallium nitride (GaN) is a next-gen power-semi technology that is replacing legacy silicon chips in markets from mobile and consumer to data center, solar and EV.
The high-spec Galaxy S23 features a Dynamic AMOLED 2X, 120Hz screen with 1750 nits peak contrast, stretching it’s 1080 x 2340 pixels across 90.1 cm2 of Corning Gorilla Glass. With a Qualcomm Snapdragon 8 Gen 2 chip, up to 512GB / 8GB RAM of storage and triple cameras up to 50 MP, the S23 excels in mobile communication performance.
For power, the S23 features a 3900 mAh Li-Ion battery, and with the GaNFast 25W charger (model EP-T2510) with USB PD 3.0 interface, reaches 50% charge in only 30 minutes, and while in sleep mode, consumes only 5 mW of power. The PD 3.0 specification means that the new charger can power a range of devices from Galaxy Buds2 audio to Galaxy Z Fold5, Galaxy Flip and Galaxy A23.
Navitas’ GaNFast technology is used in a high-frequency, quasi-resonant (HFQR) topology running at 150 kHz. GaNFast leading-edge, high-frequency performance shrinks the charger by more than 30%, and the Navitas device is fully qualified to Samsung’s stringent qualification requirements, with excellent delivery performance, quality and reliability.
“As pioneers in mobile fast charging, Navitas continues to lead the next-gen market, with all 10 of the top 10 mobile OEMs in production with GaNFast products,” said David Carroll, Sr. VP Worldwide Sales. “From 25 W to 20 MW, our expanding range of leading-edge GaN and SiC products cover everything from mobile and consumer to EVs, solar and industrial applications.”
Original – Navitas Semiconductor
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Navitas Semiconductor announced its continued sponsorship of the 2023 China Power Electronics and Energy Conversion Congress & the 26th China Power Supply Society (CPSS) Conference and Exhibition (CPSSC 2023), revealing major next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductor platforms, including GaNSafe™ – the world’s safest GaN power semiconductor.
Hosted in Guangzhou from November 10th-13th, CPSSC 2023 celebrates its 40th anniversary and promotes academic and technical exchange in the fields of power electronics, energy conversion, and power technology, to foster technical innovation and related industries.
Navitas is the technology and market leader in GaN, with over 100 million GaNFast™ power ICs shipped, and over 12 million GeneSiC™ power MOSFETs and diodes shipped into a $22 billion per year total market opportunity.
With GaNSafe, Navitas has optimized its 4th-generation GaN technology for demanding, high-power applications in data centers, solar / energy storage and EV markets, where efficiency, power density and robust & reliable operation are critical. Adopting a novel, robust, and cool-running surface-mount TOLL package, GaNSafe integrates features and functions, including:
- Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching to maximize power density.
- High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions.
- Electrostatic discharge (ESD) protection of 2 kV, vs. zero for discrete GaN transistors.
- 650/ 800 V capability to aid survival during extraordinary application conditions.
- Easy-to-use, complete, high-power, high-reliability, high-performance power IC with only 4 pins, accelerating customer designs.
- Programmable turn-on and turn-off (dV/dt) to simplify EMI regulatory requirements.
Navitas’ CPSSC 2023 program includes comprehensive, in-depth technology, application and market presentations include a plenary keynote speech, full conference paper, four industrial sessions, a guest PSMA presentation, an in-depth 3.5-hour technology seminar and full GaNSafe launch. Visitors to the exhibition will discover ground-breaking technology demonstrations and complete power system platform designs at the Navitas booth.
Original – Navitas Semiconductor
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Navitas Semiconductor announced the 2023 Investor Day, to be held at the company’s new headquarters, on Tuesday 12th December, 2023.
Meeting highlights include:
- Four major new GaN/SiC technology platforms and five focus markets, including new GaNSafe technology, positioned to revolutionize AI-based data centers, EV, and renewable applications.
- Invited customer presentations, with leading-edge applications enabled by Navitas.
- $1B+ customer pipeline & what this means to Navitas growth trajectory, with a preview of 2024 forecast and long-term targets.
- Navitas’ unique, detailed view on the past, present and future of power electronics as we look to “Electrify Our World” (guided tour, and management small-group meetings).
For in-person attendance or participation virtually via live-stream, please contact ir@navitassemi.com
Original – Navitas Semiconductor
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Navitas Semiconductor announced participation at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023, to be held in Sorrento, Italy.
The ICSCRM conference fosters collaboration and knowledge sharing among the brightest minds in the field. The conference has a rich history dating back to its inaugural meeting in 1987, evolving into a premier global forum for in-depth technical discussions on all aspects of SiC and related materials.
GeneSiC™ power devices, optimized for high-power, high-voltage, and high-reliability SiC applications, address critical markets including electric vehicles, solar energy, energy storage, industrial applications, data centers, and consumer electronics. With an unmatched voltage range spanning from 650 V to 6.5 kV, GeneSiC MOSFETs and Schottky MPS™ diodes have been at the forefront of SiC technology advancement, offering performance and efficiency that pave the way for a more electrified and sustainable future.
Navitas Semiconductor will present two paper sessions at ICSCRM 2023:
- “New Generation SiC MPS Diodes with Low Schottky Barrier Height”
- “650 V SiC Power MOSFETs with Statistically Tight VTH Control and RDS(ON) of 1.92 mΩ-cm²”
Additionally, Navitas’ SVP of SiC Technology & Operations, Dr. Sid Sundaresan, will be chairing the session on Thursday, September 21st. The session, titled “Devices 4: Short circuit, avalanche and reliability,” will focus on crucial topics in the field of SiC technology.
“Navitas’ presence at ICSCRM 2023 is a testament to the company’s unparalleled expertise in SiC technology and its commitment to driving innovation in the industry,” said Dr. Ranbir Singh, Navitas EVP for the GeneSiC business line. “As a pioneer in the field, we continue to extend the boundaries of SiC technology, revolutionizing power semiconductors with cutting-edge GeneSiC™ technology.”
Original – Navitas Semiconductor
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Navitas Semiconductor announced the world-wide launch of GaNSafe™, a new, high-performance wide bandgap power platform at a special customer, partner and press event in Taiwan. Navitas has optimized its 4th-generation gallium nitride technology for demanding, high-power applications in data centers, solar / energy storage and EV markets, where efficiency, power density and robust & reliable operation are critical.
At the worldwide launch event at the Marriot Taipei, Navitas’ David Carroll, Sr. VP Worldwide Sales, and Charles Bailley, Sr. Director Business Development will introduce Navitas and the new GaNSafe platform to an invited VIP audience of over 50 high-ranking customer attendees, plus industry partners and international media.
The new 4th-generation GaN power ICs are manufactured in Hsinchu, by long-term Navitas partner TSMC. Navitas is grateful to Dr. RY Su, Manager of GaN Power Technology at TSMC, who will make a special presentation on the future of GaN at the GaNSafe launch.
Navitas’ GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings, with over 100,000,000 units shipped, and an industry-first 20-year warranty. Now, the new GaNSafe platformhas been engineered with additional, application-specific protection features, functions and new, high-power packaging to deliver enabling performance under grueling high-temperature, long-duration conditions.
The initial, high-power 650/800 V GaNSafe portfolio covers a range of RDS(ON) from 35 to 98 mΩ in a novel, robust, and cool-running surface-mount TOLL package, to address applications from 1,000 to 22,000 W. GaNSafe integrated features and functions include:
- Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.
- High-speed short-circuit protection, with autonomous ‘detect and protect’ within 50 ns – 4x faster than competing discrete solutions.
- Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.
- 650 V continuous, and 800 V transient voltage capability to aid survival during extraordinary application conditions.
- Easy-to-use, complete, high-power, high-reliability, high-performance power IC with only 4 pins, to accelerate customer designs.
- Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.
Unlike discrete GaN transistor designs, with voltage spikes, undershoot and specification breaches, GaNSafe delivers an efficient, predictable, reliable system. GaNSafe’s robust 4-pin TOLL package has achieved the tough IPC-9701 mechanical reliability standard, and delivers simple, strong, dependable performance as compared to multi-chip modules which require 3x as many connections, and have poor cooling capability.
Navitas’ market-specific system design centers offer complete platform designs with benchmark efficiency, density and system cost using GaNSafe products to accelerate customer time-to-revenue and maximize chance of first-time-right designs. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples of system platforms enabled by GaNSafe technology include:
- Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1 bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
“Our original GaNFast and GaNSense technologies have set the industry standard for mobile charging, establishing the first market with high-volume, mainstream GaN adoption to displace silicon,” said Gene Sheridan, CEO and co-founder. “GaNSafe takes our technology to the next level, as the most protected, reliable and safe GaN devices in the industry, and now also targeting 1-22 kW power systems in AI-based data centers, EV, solar and energy storage systems. Customers can now achieve the full potential of GaN in these multi-billion dollar markets demanding the highest efficiency, density and reliability.”
The GaNSafe portfolio is available immediately to qualified customers with mass production expected to begin in Q4 2023. 40 customer projects are already in progress with GaNSafe in data center, solar, energy storage and EV applications, contributing to Navitas’ $1 billion customer pipeline.
Original – Navitas Semiconductor
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Navitas Semiconductor will reveal a new, high-performance wide bandgap power platform as part of its display at one of Asia’s most prestigious electronics exhibitions – sponsored by Navitas – SEMICON Taiwan 2023, from September 6th-8th.
Visitors will discover the latest gallium nitride (GaN) GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions.
Additionally, Navitas will showcase cutting-edge, power-system platforms to dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples include:
- Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1 bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
As part of SEMICON’s Power and Opto Semiconductor Forum, Navitas’ Charles Bailley, Senior Director of Business Development, will present “GaN Power ICs Increase Power Density in EV Power Systems”. The presentation is at 2pm, on September 6th, in room 402, 4F, TaiNEX 1.
“Breakthrough high efficiency, high reliability, and high power density – all from the new GaN power IC platform,” said Kevin 汪時民 Wang, Manager of Navitas Taiwan. “The new platform announcement matches SEMICON’s theme of ‘Innovating the World through Semiconductors’ and our own mission to ‘Electrify Our World™’.”
Original – Navitas Semiconductor
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Navitas Semiconductor announced that its CRPS185 3,200 W “Titanium Plus” server reference design not only surpasses the stringent 80Plus Titanium efficiency requirements, but also effectively satisfies the increasing power demands of AI data center power.
The rapid development and deployment of artificial intelligence (AI) including OpenAI’s ChatGPT, Microsoft’s Bing with AI, and Google’s Bard, has penetrated all aspects of people’s lives. New power-hungry AI processors like NVIDIA’s DGX GH200 ‘Grace Hopper’ demand up to 1,600 W each, are driving power-per-rack specifications from 30-40 kW up to 100 kW per cabinet. Meanwhile, with the global focus on energy conservation and emission reduction, as well as the latest European regulations, server power supplies must exceed the 80Plus ‘Titanium’ efficiency specification.
Navitas’ reference designs dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost, enabled by GaNFast power ICs. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results.
In this case, the ‘Common Redundant Power Supply’ (CRPS) form-factor specification was defined by the hyperscale Open Compute Project, including Facebook, Intel, Google, Microsoft, and Dell. Now, Navitas’ CRPS185 platform delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and easily exceeds the Titanium efficiency standard, reaching over 96.5% at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark, critical for data center operating models.
The CRPS185 uses the latest circuit designs including an interleaved CCM totem-pole PFC with full-bridge LLC. The critical components are Navitas’ new 650V GaNFast power ICs, with robust, high-speed integrated GaN drive to address the sensitivity and fragility issues associated with discrete GaN chips. Additionally, GaNFast power ICs offer extremely low switching losses, with a transient-voltage capability up to 800 V, and other high-speed advantages such as low gate charge (Qg), output capacitance (COSS) and no reverse-recovery loss (Qrr). As high-speed switching reduces the size, weight and cost of passive components in a power supply, Navitas estimates that GaNFast power ICs save 5% of the LLC-stage system material cost, plus $64 per power supply in electricity over 3 years.
Compared to traditional ‘Titanium’ solutions, the Navitas CRPS185 3,200 W ‘Titanium Plus’ design running at a typical 30% load can reduce electricity consumption by 757 kWh, and decrease carbon dioxide emissions by 755 kg over 3 years. This reduction is equivalent to saving 303 kg of coal. Not only does it help data center clients achieve cost savings and efficiency improvements, but it also contributes to the environmental goals of energy conservation and emission reduction.
In addition to data center servers, this solution can also be widely used in applications such as switch/router power supplies, communications, and other computing applications.
“The popularity of AI applications like ChatGPT is just the beginning. As data center rack power increases by 2x-3x, up to 100 kW, delivering more power in a smaller space is key,” said Charles Zha, VP and GM of Navitas China. “We invite power designers and system architects to partner with Navitas and discover how a complete roadmap of high efficiency, high power density designs can cost-effectively, and sustainably accelerate their AI server upgrades.”
Original – Navitas Semiconductor
