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Cambridge GaN Devices (CGD) will take the opportunity afforded by PCIM, Europe’s leading power electronics exhibition and conference (Nuremberg Messe, 11-13th June) to demonstrate how the company’s product portfolio is developing to address higher power applications such as motor drives, inverters and data centres, as well as lower power, ultra-compact smart portable device adapters and chargers.
As well as introducing a new product family, and showing a selection of informative demos on its booth (Hall 7 stand 643), CGD will have a very visible presence around the show with various presentations.
- 15.00, Tuesday 11th June, Hall 9-642: Dr Giorgia Longobardi, CGD’s CEO, will formally launch the company’s latest ICeGaN™ 650V family of GaN ICs, targeting applications in the 1kW to 5kW range.
- 13.30, Tuesday 11th June, Technology Stage (Hall 7 Stand 743): CGD’s CTO, Professor Florin Udrea will take part in a panel discussion hosted by Markt & Technik editor, Engelbert Hopf.
- 14:20, Wednesday 12th June, Technology Stage (Hall 7 booth 743): Professor Udrea will be part of a panel discussion hosted by Bodo’s Power Systems, entitled ‘GaN Wide Bandgap Design, the Future of Power.’
- 14.10, Thursday 13th June, Technology Stage (Hall 7 booth 743): Di Chen, Director of Business Development & Technical Marketing, CGD, and José Quiñones Staff Applications Engineer at Qorvo will share the stage with a joint presentation ‘GaN Power ICs and Power Application Controller Optimize Performance in BLDC and PMSM Motor Drives.’
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“With its inherent ruggedness and reliability, our ICeGaN™ GaN ICs are perfectly suited to meet the needs of higher power applications such as data centres and inverters. Our presentations and demos and the new devices which we are launching at the show will illustrate our capabilities for these markets.CGD’s Booth (Hall 7 643) will feature reference designs, evaluation boards and demos that support the company’s existing business in chargers and adapters as well as the new higher power applications. New exhibits include:
- Very high power density (30W/in3) 140W reference design produced with the Taiwanese Industrial Technology Research Institute (ITRI) board
- Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles
- Two half-bridge evaluation boards with new thermally-enhanced DFN package designs
- A 2.7kW totem-pole power factor correction demo board
- Qorvo motor drive evaluation kit using ICeGaN
- Demo comparing a half-bridge circuit realized using ICeGaN vs discrete e-Mode GaN
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The power electronics world has swung irrevocably in favour of GaN. Visit CGD during PCIM to experience the world’s easiest-to-use GaN, so your application can benefit from GaN’s greater efficiency and higher power density now, without any design delays.”Original – Cambridge GaN Devices
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Navitas Semiconductor invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.
Aligned with Navitas’ mission to “Electrify Our World™”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage.
Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.
“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”
Major technology updates and releases include GaNSafe™ – the world’s most-protected, most reliable, and highest-performance GaN power, Gen-4 GaNSense™ Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.
In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:
11th June, 13:00 – 14:30, Hall 10.1
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
- A low-cost 300 W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270 cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300 kHz. This new design has resulted in a cased power density of 1.1 W/cc.
12th June, 15:30 – 17:00, Foyer
- Evaluation of SiC Devices for Over 500 kHz Application Based on Buck Circuit – Minli Jia, Sr. Staff Applications Engineer, Navitas Semiconductor
- This paper selects three 1200 V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a Buck converter with an output power of 3.6 kW and a switching frequency of 600 kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.
Original – Navitas Semiconductor
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
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Transphorm, Inc. announced that its PCIM 2024 showcase will underscore its ability to outperform competitive wide bandgap technologies in higher power systems. For example, Transphorm’s normally-off d-mode SuperGaN®platform delivers higher electron mobility resulting in lower crossover losses versus Silicon Carbide—making it more a cost-effective, higher performing solution for various electric vehicle, datacenter/AI, infrastructure, renewable energy, and other broad industrial applications. To learn more, visit Transphorm during PCIM in Hall 7, Stall 108 during June 11 to 13, 2024.
Transphorm SuperGaN FETs are in production in a wide range of customer products crossing the power spectrum from low 45 W power adapters to higher power 7.5 kW PSUs. Many of these customer products are the first publicly recognized GaN-based systems of their kind and uniquely demonstrate advantages enabled only by the SuperGaN platform.
Examples include the previously mentioned liquid-cooled 7.5 kW PSU for mission-critical datacenter/blockchain applications; a 2.7 kW server CRPS with > 82 W/in3 power density (highest in any GaN power system available today); and 2.2 kW and 3 kW rack-mount 1U uninterruptible power supplies (UPSes). These design wins illustrate Transphorm’s ability to drive GaN into the various application markets composing an estimated GaN TAM of $8 billion by 2028.
In addition to real-world customer products, Transphorm continues to lead in technological achievements having recently demonstrated a 5 microsecond short-circuit withstand time, a bidirectional four-quadrant switch, and a 1200 V GaN-on-Sapphire device.
On-site demonstrations will include Transphorm solutions for 2- and 3-wheeler electric vehicle chargers along with customer PSUs for renewable energy systems, data centers, and more.
Speaking Engagement
Learn more about how Transphorm’s GaN solutions outperform competitive technologies and enable cross-industry innovations during the Bodo’s Power Systems session.
Panel: GaN Wide Bandgap Design, the Future of Power
Speaker: Philip Zuk, Senior Vice President, Business Development and Marketing
Date: June 12
Time: 2:20 – 3:20 p.m. CEST
Location: Hall 7, Stall 743Original – Transphorm
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Like PCIM Europe, which takes place annually in Nuremberg in Germany, the PCIM event in China is an international meeting ground for specialists in power electronics and its applications in drive technologies and power quality. This year PCIM Asia will be held on August 29-31, 2023 in Shanghai.
The event offers a chance to see the latest developments in power electronics components and systems. The strong link between conference and exhibition guarantees the high quality of the show. This unique combination fosters the fast and easy exchange between industry and science, for which PCIM Asia is famous.
This is where experts from industry and academia meet, where new trends and developments are presented to the public for the very first time. In this way, the event mirrors the entire value chain – from components, drives control and packaging to the final intelligent system.
PCIM Asia is an international exhibition and conference focusing on power electronic device industry chain in Asia. It is the first choice platform for domestic and foreign well-known device manufacturers to release new products and latest technologies. A number of enterprises in the field of electronic materials, inductive components and passive component products will debut in PCIM Asia for the first time.
PCIM Asia Conference is highly praised for its in-depth discussion of the latest industrial scientific research achievements with the combination of academics and industries.
Original – PCIM Asia
