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Power Master Semiconductor has released a new package portfolio, TO leadless (TOLL) package for 650V eSiC MOSFET series to meet the increasing demands for high power density and efficiency with superior switching performance in various applications such as AI data center servers, telecom infrastructure, flat panel display power, ESS, and battery formations.
Recently, the rapid growth of artificial intelligence (AI) is expected to drive continued strong data center demand. AI datacenters rely on GPUs that consume 10 to 15 times more power than traditional CPUs. SiC MOSFETs in TOLL package are an optimal solution for the rapidly expanding AI applications today.
The TOLL package has a footprint of 9.9mm x 11.7mm, reducing the PCB area by 30% compared to the D2PAK 7-lead package. Moreover, with a thickness of 2.3mm, it has 60% less height than the D2PAK 7-lead package.
The TOLL offers superior thermal performance and low package inductance (2nH) compared to D2PAK 7-lead package. Kelvin source configuration lowers gate noise and reduces turn-on loss by 60% compared to same device without Kelvin source configuration, enabling higher frequency operation and improved power density. The new PCT65N27M1 has a VDSS rating of 650 V with a typical RDS(ON) of 27mΩ and a maximum drain current (ID) of 84 A.
Power Master Semiconductor’s products in TOLL package has special grooves in the gate and source pins to enhance the performance of the solder joint and offers Moisture Sensitivity Level 1 (MSL 1).
Original – Power Master Semiconductor
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Power Master Semiconductor (PMS) announced the release of its new AEC-Q101 qualified 1200V eSiC MOSFET in a D2PAK-7L package, designed to revolutionize power electronics in electric vehicles (EVs). PMS’s automotive-grade 1200V eSiC MOSFET offers superior efficiency, high power density, high reliability, and enables bi-directional operation, making it an ideal choice for a wide range of automotive applications, including on-board chargers (OBCs), DC-DC converters, and e-compressors.
The automotive industry is rapidly transitioning towards electrification, driven by the growing demand for sustainable and environmentally friendly transportation solutions. This shift has created a surge in demand for high-performance power electronics that can meet the stringent requirements of EV applications. Bi-directional operation is the key trend for the on-board chargers (OBCs) applications to meet V2L (Vehicle to Load), V2G (Vehicle to Grid), V2V (Vehicle to Vehicle), and V2H (Vehicle to Home appliance).
Therefore, the topology of OBCs is moving to Totem-pole PFC + CLLC or DAP resonant converter from Interleaved CCM PFC or Dual boost bridgeless PFC + LLC resonant converters. Larger battery capacity and faster charging demands are driving 800V battery systems for BEV application.
The automotive grade 1200V eSiC MOSFET is an optimized solution for the e-compressor, an indispensable power conversion system for efficient thermal management that increases battery life, charging efficiency, and driving range, and maintains a comfortable environment. It is also optimized for Totem-Pole PFC and CLLC/DAB (Dual Active Bridge) topologies, which are essential for bidirectional power conversion, a key trend in onboard chargers (OBC) for 800V battery system in electric vehicles.
Key Features of automotive grade 1200V e SiC MOSFET
- AEC-Q101 qualified for automotive applications
- Robust Avalanche Capability
- 100% Avalanche Tested
- Operating temperature range : -55°C to +175°C
- Low switching losses
- D2PAK-7L kelvin source package for ease of design and integration
“Driven by our unwavering commitment to innovation and sustainability, Power Master Semiconductor continuously develops power device solutions that achieve breakthrough efficiency and performance”, said Namjin Kim, Senior Director of Sales & Marketing.” The introduction of our new automotive-grade 1200V eSiC MOSFET represents a major leap forward in empowering the automotive industry’s shift towards cleaner, more energy-efficient power electronics. We are confident that this innovative solution will be the optimal choice for high-performance automotive applications.”
Original – Power Master Semiconductor
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Power Master Semiconductor has released 2nd generation of the 1200V eSiC MOSFET to meet the requirements of higher efficiency, high power density, robust reliability, and ruggedness in various applications such as DC EV charging stations, solar inverters, energy storage systems (ESS), motor drives and industrial power supplies. 1200V eSiC MOSFETs offer significant system advantages such as higher power density, efficiency and less cooling effort due to its much lower power losses.
Therefore, SiC MOSFETs are gaining popularity especially for renewable energy systems, EV charging systems that required higher power density, efficiency and robustness. DC EV charging station is level-3 charger and its power level is increasing by modular configuration as demand of faster charging time and higher battery capacity of EV. DC EV charging provides a mostly constant current output for wide DC output voltage range (200V to 900V) and load profile.
The new generation of 1200V eSiC MOSFET, Gen2 improved key FOM characteristics such as gate charge (QG), stored energy in output capacitance (EOSS), reverse recovery charger (QRR) and output charge (QOSS) by up to 30% compared to previous generation. This new generation SiC MOSFET technology offers significant system advantages such as smaller, lighter, higher efficiency, and less cooling effort thanks to its much lower power losses in various power conversion applications.
1200V eSiC MOSFET Gen2 offer excellent switching performance and 100% tested avalanche capability. It achieved 44% lower switching loss compared to the previous generation by extremely low miller capacitance (QGD).
Power Master Semiconductor is steadfastly committed to developing cutting-edge power device solutions that prioritize efficiency and sustainability,” said Namjin Kim, Sr. Director Sales & Marketing. “The introduction of our new generation of 1200V eSiC MOSFET marks a substantial leap forward in facilitating the development of cleaner, more efficient power systems. We are confident that the 1200V eSiC Gen2 MOSFET will play a transformative role in high-performance applications.
Original – Power Master Semiconductor
