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ROHM has reached a basic agreement with Solar Frontier K.K. to acquire the assets of Solar Frontier’s former Kunitomi Plant, located in Japan. The acquisition is scheduled to take place in October 2023 and will belong to the ROHM Group’s main production bases.
The role of semiconductors, one of ROHM’s core business fields is becoming increasingly important to achieving a decarbonized society.
In particular, the automotive and industrial equipment markets are undergoing technological innovation such as electrification in order to reduce environmental impact and achieve carbon neutrality. With this, the demand is increasing – especially for power and analog semiconductors.
As further expansion of the semiconductor market is expected, the ROHM Group intends to expand its production capacity continuously, particularly for silicon carbide (SiC) power devices, and ensure a stable supply to ROHM’s customers.
Original – ROHM
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Vitesco Technologies, a leading international manufacturer of modern drive technologies and electrification solutions, has secured strategically important capacities in energy-efficient silicon carbide power semiconductors through a long-term supply partnership with ROHM – worth over one billion US dollars until 2030. The development partnership with the manufacturer ROHM, which began in 2020, created the basis for the supply partnership now signed in Regensburg. Vitesco Technologies’ advanced inverters with integrated ROHM SiC chips will be adopted by two customers, to be applied inside electric vehicle powertrains. Vitesco Technologies will start supplying a first series project as early as 2024. The company is thus even ahead of the originally targeted timeline.
SiC devices enable the design of particularly efficient power electronics, such as those needed for electric car inverters. SiC chips are a key technology, particularly for high voltages and for vehicles with demanding range targets and optimum overall efficiency. During the existing development partnership with ROHM the relevant SiC chips were further optimized for use in automotive inverters starting in 2024.
Silicon carbide belongs to the so-called wide bandgap semiconductors, whose wide bandgap (simplified: the energy gap between the non-conductive state and the conductive state of the electrons in the material) enables lower electrical resistance, fast and low loss switching chips for power electronics. At the same time, SiC chips are more thermally resistant, so that the power density of electronics can be increased.
Thanks to these features, SiC electronics have reduced conversion losses compared to conventional silicon (Si). Especially at high voltage levels such as 800 V, SiC inverters are more efficient than Si models. Since 800 V is the prerequisite for fast and thus convenient high-voltage charging, SiC devices are at the beginning of a worldwide boom. Reduced conversion losses in the inverter are also significant for the overall efficiency of electric driving and thus for range. Competition for sufficient capacities in components made of this high-tech material is correspondingly fierce.
Original – Vitesco Technologies
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Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, Semikron Danfoss added ROHM’s new 1200V RGA IGBT to its low power module offering. In doing so, both companies show that they remain committed to serving worldwide motor drive customers’ needs.
The worldwide growth in electrification technologies has created unprecedented demand for power modules. Often, it is the chip supply that limits power module availability. Despite ongoing investments in production capacity by the chip manufacturers, the supply situation remains tight. It is against this backdrop that ROHM has introduced the new 1200V RGA IGBT, targeted as an alternative to the latest Generation 7 IGBT devices in industrial applications. ROHM is now expanding their bare die offering to Semikron Danfoss, positioning themselves as an advanced alternative to traditional chip suppliers.
“The RGA is a newly designed, light punch through, trench gate IGBT with Tj,max = 175°C. The conduction, switching, and thermal characteristics are optimized for new industrial drive applications in the low to medium power range. At the same time, the RGA is intended to remain compatible with existing IGBT solutions, enabling a multiple source approach. In addition, the RGA can also be used to improve transient overcurrent handling during overload conditions in motor drive applications,” says Kazuhide Ino, Member of the Board, Managing Executive Officer, CFO at ROHM.
Semikron Danfoss can offer the 1200V RGA IGBT in a full range of nominal current classes from 10A to 150A. This range, combined with the suitability of the RGA chip in motor drive applications, means that the MiniSKiiP family is the ideal choice for module implementation. The baseplate-less, spring-contact MiniSKiiP is already deeply embedded in the worldwide motor drive market and always equipped with the latest generation IGBTs. Therefore, it is important for this product to have an alternative IGBT source to diversify the supply chain. The uniform-height MiniSKiiP housing family is also offered on the market as a multiple source package, making an alternative IGBT a valuable option for manufacturers.
For press-fit/solder applications, the industry-standard SEMITOP E package will also be available in pin-compatible configurations to existing Generation 7 IGBT module offerings. This housing family will also offer sixpack (“GD”) and converter-inverter-brake (“DGDL”) circuit configurations.
“The power electronics industry continues to recover and learn lessons from the supply issues in recent years. It’s clear that diversification in semiconductor chip and module manufacturing is required to generate true ‘multiple source’ power modules”, says Claus A. Petersen, President, Semikron Danfoss. “In the case of 1200V Generation 7 IGBTs, a reliable equivalent from a reputable manufacturer is now available to address this issue also in the low power range. The 1200V RGA IGBT from ROHM is a perfect alternative to the Generation 7 IGBT and can be made to behave in a remarkably similar manner with small gate resistor adjustment,” continues Peter Sontheimer, Senior Vice President Industry Division & Managing Director at Semikron Danfoss.
Original – Semikron Danfoss
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While the adoption of GaN devices has expanded in recent years due to their superior high-speed switching characteristics, the speed of Control ICs, which are responsible for directing the driving of these devices, has become challenging.
In response, ROHM has further evolved its ultra-high-speed pulse control technology Nano Pulse Control™. It is cultivated for power supply ICs, succeeding in significantly improving the control pulse width from the conventional 9ns to an industry-best 2ns. Leveraging this technology allowed ROHM to establish its ultra-high-speed Control IC technology that maximizes the performance of GaN devices.
When pursuing miniaturization of the power supply circuit, it is necessary to reduce the size of the peripheral components through high-speed switching. Achieving this requires a Control IC that can take advantage of the drive performance of high-speed switching devices such as GaN devices.
To propose solutions that include peripheral components, ROHM established ultra-high-speed Control IC technology optimized for GaN devices utilizing proprietary analog power supply technology Nano Pulse Control™.
ROHM is currently working to commercialize Control ICs utilizing this technology, with plans to start sample shipment of 100V 1ch DC-DC Control IC in the second half of 2023. Using in conjunction with ROHM GaN devices (EcoGaN™ series) is expected to result in significant energy savings and miniaturization in a variety of applications, including base stations, data centers, FA (Factory Automation) equipment, and drones.
Going forward, ROHM will continue to develop products that solve social issues by pursuing greater ease-of-use in applications centered on its strengths in analog technology.
Original – ROHM
