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Maspower Semiconductor announced the launch of its latest IGBT (Insulated Gate Bipolar Transistor) module, the MSG140T120HLF4. This advanced device is designed to meet the rigorous demands of high-power applications, including electric vehicle (EV) charging, string converters, industrial uninterruptible power supplies (UPS), and other power-train systems requiring high-efficiency power switching.
Features and Specifications
The MSG140T120HLF4 boasts a remarkable set of features that make it an ideal choice for high-voltage and high-current applications.
- High Voltage and Current Capability: With a collector-emitter voltage (VCE) of up to 1200V and a continuous collector current (IC) of 140A at 100°C, this IGBT module can handle demanding power loads with ease.
- Very Low Saturation Voltage: The device offers an ultra-low saturation voltage (VCE(sat)) of just 1.94V at 100A, ensuring high efficiency in power conversion.
- High Thermal Tolerance: The maximum junction temperature (TJ) is rated at 175°C, allowing for operation in harsh environments without compromising performance.
- Positive Temperature Coefficient: The device exhibits a positive temperature coefficient, improving thermal stability and reducing the risk of thermal runaway.
- Fast Switching Speeds: With rapid turn-on and turn-off delays, rise times, and fall times, the IGBT module ensures high-speed switching for efficient power conversion.
- High Power Handling: With a maximum collector current of 280A at 25°C and 140A at 100°C, this IGBT module can effortlessly handle high-current demands.
- Tight Parameter Distribution: Ensures consistent performance across multiple units, simplifying design and manufacturing processes.
- High Input Impedance: Minimizes gate drive requirements, reducing system complexity and cost.
Versatile Applications
With its exceptional electrical and thermal performance, the MSG140T120HLF4 is well-suited for a wide range of applications that require high-power switching capabilities.
- Electric Vehicle (EV) Charging: Its high power handling capability and fast switching speeds make it ideal for EV charging stations.
- String Converters: Suitable for solar and other renewable energy systems requiring efficient power conversion and efficient energy management.
- Industrial UPS Systems: Ensures uninterrupted power supply to critical industrial equipment, minimizing downtime and maintaining operational continuity.
- Other High-Power Train Applications: Suitable for a variety of high-power switching applications, including motor drives, inverters, and power conversion systems.
Original – Maspower Semiconductor
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In the current rapidly evolving electronics industry, there is an increasing demand for high-performance MOSFETs. With its superior specifications and robust design, the MS2N350HGC0 MOSFET stands out as an innovative solution for a wide range of high-voltage applications.
The MS2N350HGC0 MOSFET has been designed to meet the rigorous specifications of contemporary electronics, offering an unparalleled combination of features and performance. This MOSFET is the ideal choice for high-voltage power supplies, capacitor discharge, pulse circuits and laser and X-ray generation systems. With a maximum drain-source voltage of 3500V and a continuous drain current of 2A, it is capable of withstanding the high voltage applications on the market.
One of the standout features of the MS2N350HGC0 is its rapid intrinsic diode and minimized gate charge.. This enables the device to operate at high speeds, which is crucial for applications that necessitate rapid response times. Moreover, the MOSFET exhibits exceedingly low intrinsic capacitances, which further enhances its performance in demanding applications.
The MS2N350HGC0’s on-state resistance (Rds) of 19Ω further enhances its performance, allowing for efficient energy transfer and minimal heat generation. This makes it an excellent choice for power supplies and other applications where efficiency and reliability are paramount.
The product is packaged in accordance with the industry standard TO-247, thereby ensuring compatibility with a wide range of existing systems. Its compact size and lightweight design facilitate integration into any application.
The MOSFET’s electrical ratings are noteworthy for their impressive nature. This product is capable of withstanding a continuous drain current of 2A at 25°C and 1.6A at 100°C, with a pulsed drain current of up to 6A. This makes it suitable for even the most demanding applications. Furthermore, its total dissipation of 463 watts at 25°C guarantees reliable operation even under heavy load conditions.
The MS2N350HGC0 also offers excellent avalanche and thermal performance. It has an avalanche current of 1.3A and can withstand a single pulse avalanche energy of 81mJ. The operating junction temperature ranges from -55°C to 150°C, ensuring stable performance even in extreme environments.
For ease of installation, the MS2N350HGC0 has a maximum lead temperature for soldering purposes of 300°C and a mounting torque of 1.13N·m. This ensures that the MOSFET can be securely mounted into any system with minimal effort.
In conclusion, the MS2N350HGC0 MOSFET is a powerful and reliable solution for high-voltage applications. The superior performance, compact design, and excellent thermal stability of the product make it the optimal choice for a diverse range of applications. To gain further insight into this innovative new product, we invite you to contact our sales team. We encourage you to explore the potential of the MS2N350HGC0 MOSFET and discover how it can revolutionize your high-voltage applications.
Original – Maspower Semiconductor
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In a significant advancement for the high-voltage power electronics industry, Maspower Semiconductor has introduced the MS2N300HGC0 MOSFET, a powerful new component that sets new benchmarks in performance and reliability.
This cutting-edge product, housed in the TO-247 package, offers unprecedented performance with its robust 3000V voltage rating and 2A continuous current capability. What truly sets this MOSFET apart, however, is its rigorous testing and certification. The MS2N300HGC0 has undergone 100% avalanche testing, ensuring exceptional resilience and durability in demanding applications.
Moreover, the MS2N300HGC0’s Fast Intrinsic Diode design and minimized gate charge contribute to its high-speed switching capabilities, making it a perfect fit for high-voltage power supplies, PV inverters, switching applications and more. Its very low intrinsic capacitance further enhance its performance, delivering maximum efficiency and reliability. Maspower’s commitment to innovation and reliability is evident in the MS2N300HGC0, which has been rigorously tested and certified to meet the highest industry standards.
“The MS2N300HGC0 is a testament to our commitment to pushing the boundaries of high-voltage power electronics,” said a spokesperson from Maspower. “We are proud to offer this state-of-the-art MOSFET to our customers, enabling them to achieve unprecedented levels of performance and reliability in their applications.”
Original – Maspower Semiconductor
