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SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China. The new facility realized volume production only 21 months after groundbreaking in September of 2022, and will begin shipments to customers in Q4 2024 for high power and high voltage rectifiers and MOSFET 6-inch and 8-inch wafers.
This new fab marks a milestone in SMC’s growth as they further invest in the China market and the growing renewable energy sector. The new 300,000 square foot facility is set to produce 1.2 million silicon wafers and 60,000 silicon carbide wafers per year, increasing SMC’s total production by over four times. SMC’s current fab in Lukou, Nanjing currently produces 300,000 silicon wafers per year. The $3 billion RMB investment in the new fab will allow SMC to handle the end-to-end production of silicon carbide products for the first time and has created three hundred new jobs.
“As the world moves towards using more and more renewable energy, we are thrilled to now be able to participate in the sector and be part of the solution to increase green energy usage and protect our Earth. We are very excited to have our new fab up and running and we look forward to servicing our customers’ needs better with the increased capacity.” – Dr. Yunji Corcoran, SMC chairwoman and chief executive officer.
As Nanjing is also home to SMC’s current fab, the city was an advantageous choice for the new fab location. With their experienced management team, starting up the new fab was a seamless process, allowing production to begin not long after breaking ground. The city is also home to abundant resources and engineering talent, making it an ideal place for SMC to grow and expand.
Power Semiconductors Weekly team had pleasure to interview Dr. Yunji Corcoran on this occasion:
- The company history dates back to 1997. Can you tell us about some of the major milestones and your semiconductor journey so far?
Certainly. In the early stages of our company, from 1997 until about 2014, we focused on the US and South Korean markets. We were growing steadily, but remained focused on the quality of our products. From 2014 to 2019, we began to focus on active growth, but I consider this more of a preparation stage for our company’s expansion. We investigated ways to create better products and put more of our R&D efforts into new silicon and Silicon Carbide (SiC) products. We also began strengthening our salesforce globally. From 2019 on, we started shipping our new products, both silicon and SiC. Now, we have reached our most significant milestone to date: opening our second fab and quadrupling our production capabilities. We are beginning a new phase that will focus on growing our presence in the power semiconductor market.
- Today we see many semiconductor companies investing a lot of energy into the automotive, renewables, and AI applications. With a wide product line and a new wafer fab to support further expansion, what are your major areas of interest and how do you see them evolve in the coming years?
Automotive, renewables, and AI are extremely relevant markets for both our company and the overall semiconductor industry right now. AI requires a lot of power supply, so we plan to grow our power supply products in that area alongside our existing customers. Automotive and renewables are newer segments for us and the semiconductor market, but ones with incredibly high demand right now. The market is growing rapidly, so we are growing with aims to successfully compete in those areas as well.
Our plan is to focus on our growth within the power supply market and naturally expand into the sustainable energy market. As the world continues to prioritize clean energy, the demand for EV and renewable energy products will also grow. Since SiC products in particular meet the specific power needs of those applications, a rise in the use of SiC products seems likely. I suspect the semiconductor industry will play a crucial role in providing more clean energy globally, which we are excited to be a part of.
- With the new fab you plan to address both silicon and silicon carbide markets? What is your view on the growing demand for SiC and how SMC Diode Solutions plan to correspond to it?
Yes, our new fab will produce both silicon and SiC products. Our current fab produces approximately 300,000 silicon wafers per year, but our new fab has the capability to produce a total of 1,260,000 wafers per year – 1,200,000 silicon and 60,000 SiC. We are very much focused on our silicon power products and view our SiC line as a natural extension of that.
The growing demand for SiC products makes perfect sense. SiC is a material with remarkable properties. It is considered a “wide bandgap” material, which means that it requires more energy to excite electrons from the valence band to the conduction band compared to standard silicon semiconductors. As a result, it offers superior performance characteristics including higher reverse voltage capabilities and greater stability at high temperatures.
Overall, SiC-based products offer improved efficiency and reliability compared to traditional silicon counterparts. For a lot of newer applications, particularly in the sustainable energy sector, these capabilities have become more and more necessary. We see our new fab opening as a natural response to this demand, ande are increasing our capabilities to grow alongside the market.
- Today you have four major locations in China, South Korea, Germany and the USA. Do you plan to expand your network further?
Yes, definitely. We consider SMC to be a global company, and have a range of operations throughout the world, including our headquarters in China and other offices in the US, Germany, South Korea, the UK, and India. As we grow and gain customers throughout the world, we will continue to establish more locations, whether they are R&D, manufacturing, packaging, or sales offices.
- Speaking of the network and future growth opportunities. Both of your fabs are located in Nanjing. With many companies in the US already taking advantage of the CHIPS and Science Act, do SMC Diode Solutions have any considerations to join the rest and use this chance to strengthen the US presence?
It is exciting that governments are recognizing the importance of semiconductors through initiatives like the CHIPS and Science Act, and I think this will really bolster the industry as a whole. Right now, we’re focused on our manufacturing efforts in Asia, but are open to the possibility as we continue to grow.
- With the rise of the Chinese semiconductor industry and a very competitive landscape, how do you position your company and differentiate from the growing number of new entrants?
The key thing is our products. Our products stand out for their high quality and outstanding performance. Our team’s commitment to customer service really sets us apart as well.
Our company also approaches the semiconductor market from a unique perspective. As a business with global locations and leadership, we deeply understand the needs of the international market. We prioritize high quality standards that the international market demands while benefiting from relatively low overall production costs, creating an ideal product for our customers.
- We see many companies in China, Europe, the US, shifting to the vertical structure and full integration of all processes – from growing the semiconductor boules to the packaging of the final product. What are your thoughts on such an approach and do you see it applicable for your company in the future as well?
I’ve also noticed this trend in the industry. While I can see the benefits of this approach for some, I would not anticipate applying it within SMC. I believe in focusing our efforts on what we’re able to do best. We have specialized in design and manufacturing for over 25 years and plan to continue that.
We do have an existing silicon module line, so we are considering expanding into SiC modules in the future. However, for our company we believe it’s best to stay focused on the functions we currently have and prioritize delivering the highest quality product.
- And lastly, after the announcement of a new fab opening, many of your partners would be willing to engage in discussions to find out more. What trade shows or conferences in the second half of 2024 can they meet the company at?
We would love to engage in those discussions as well. You can find us with our own booth at Electronica 2024 this September in Munich, Germany and the Anaheim Electronics & Manufacturing Show (AEMS 2024) in Anaheim, California this October. We will also be attending ISCRM 2024 in Raleigh, North Carolina this fall.
More often than not, you will find someone from our company at any major semiconductor event. Feel free to contact us at sales@smc-diodes.com for any questions or check our website updates to see where you can find us next.
Original – SMC Diode Solutions
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The latest onsemi 7th generation 1200V QDual3 Insulated Gate Bipolar Transistor (IGBT) power modules offer increased power density and deliver up to 10% more output power than other available competing products. Based on the latest Field Stop 7 (FS7) IGBT technology, the 800-amp (A) QDual3 module delivers industry-leading efficiency to reduce system costs and simplify designs.
In a 150KW inverter, the QDual3 module will dissipate 200 watts (W) less in losses compared to the closest competition, significantly reducing heatsink size. QDual3 is engineered to work under harsh conditions and is ideal for high-power electronics converters such as central inverters in solar farms, energy storage systems (ESS), commercial agricultural vehicles (CAVs) and industrial motor drives.
Currently, two products are available depending on the applications – NXH800H120L7QDSG and SNXH800H120L7QDSG.
Increasing renewable energy adoption amplifies the need for solutions that can manage peak demand and ensure continuous power supply. Peak shaving, the practice of reducing electricity use during peak hours, is essential for maintaining electric grid stability and reducing costs. Using the QDual3 modules, manufacturers can construct a solar inverter and ESS that output more power in the same system size, enabling more efficient energy management and storage capabilities, and allowing for a smoother integration of solar power into the grid.
The modules also mitigate the intermittency of solar energy by storing excess power in an ESS, ensuring a reliable and consistent energy flow. For large systems, the modules can be paralleled to increase the output power up to a couple of MWs and compared to traditional 600 A module solutions, the 800 A QDual3 significantly reduces the module quantity, greatly simplifying design complexity and cutting system costs.
The QDual3 IGBTs module features an 800 A half-bridge configuration that integrates the latest Gen7 trench Field Stop IGBT and diode technology using onsemi’s advanced packaging techniques to reduce switching and conduction losses.
With FS7 technology, the die size is reduced by 30%, allowing more die per module, increasing the power density to enable the maximum current capacity up to 800 A or higher. With an IGBT Vce(sat) as low as 1.75V (175°C) and low Eoff, the 800 A QDual3 module dissipates 10% lower energy losses than the next-best alternative. The modules also meet the stringent standards required of an automotive application.
“Increased electrification of commercial fleets such as trucks and busses and the need of renewable energy sources demand solutions that can generate, store and distribute power more efficiently. Transferring energy from renewable sources to the grid, storage systems and to downstream loads with the lowest power losses possible is increasingly critical,” said Sravan Vanaparthy, vice president, Industrial Power Division, Power Solutions Group, onsemi. “With its industry-standard pin-out and market-leading efficiencies, QDual3 enables power electronics designers to plug and play these modules for an immediate performance boost in their systems.”
Original – onsemi
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The influence of artificial intelligence (AI) is driving up the energy demand of data centers across the globe. This growing demand underscores the need for efficient and reliable energy supply for servers. Infineon Technologies AG opens a new chapter in the energy supply domain for AI systems and unveils a roadmap of energy efficient power supply units (PSU) specifically designed to address the current and future energy need of AI data centers.
By introducing unprecedented PSU performance classes, Infineon enables cloud data center and AI server operators to reduce their energy consumption for system cooling. The innovative PSUs reduce power consumption and CO 2 emissions, resulting in lower lifetime operating costs. The powerful PSUs are not only used in future data centers but can also replace existing power supply units in servers and increase efficiency.
In addition to the current PSUs with an output of 3 kW and 3.3 kW available today, the new 8 kW and 12 kW PSUs will contribute to further increasing energy efficiency in future AI data centers. With the 12 kW reference board, Infineon will offer the world’s first power supply unit that achieves this level of performance and supplies future data centers with power.
“At Infineon, we power AI. We are addressing a critical question of our era – how to efficiently meet the escalating energy demands of data centers,” says Adam White, Division President Power & Sensor Systems at Infineon. “It’s a development that was only possible by Infineon’s expertise in integrating the three semiconductor materials silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) into a single module. Our PSU portfolio is therefore not only an example of Infineon’s innovative strength, which leads to first-class results in terms of performance, efficiency and reliability for data centers and the AI ecosystem. It also reinforces Infineon’s market leadership in power semiconductors.”
Infineon is responding to the requirements of data center operators for higher system efficiency and lower downtimes. The growth of server and data center applications has led to an increase in power requirements, necessitating the development of power supplies with higher power ratings from 800 W up to 5.5 kW and beyond. This increase is driven by the growing power requirements of Graphic Process Units (GPU) on which AI applications are computed.
High-level GPUs now require up to 1 kW per chip reaching 2 kW and beyond by the end of the decade. This will lead to higher overall energy demand for data centers. Depending on the scenario, data centers will account for up to seven percent of global electricity consumption by 2030; this is an order of magnitude comparable to India’s current electricity consumption.
Infineon’s new PSUs contribute to the efforts to limit the CO 2 footprint of AI data centers despite the rapidly growing energy requirements. This is made possible by a particularly high level of efficiency that minimizes power losses. Infineon’s new generation PSUs achieve an efficiency of 97.5 percent and meet the most stringent performance requirements. The new 8 kW PSU is capable of supporting AI racks with an output of up to 300 kW and more. Efficiency and power density is increased to 100 watts per in³ compared to 32 W/in³ in the available 3 kW PSU, providing further benefits for the system size and cost savings for operators.
From a technical perspective, this is made possible by the unique combination of the three semiconductor materials Si, SiC and GaN. These technologies contribute to the sustainability and reliability of AI server and data center systems. Innovative semiconductors based on wide-bandgap materials such as SiC and GaN are the key to a conscious and efficient use of energy to drive decarbonization.
The 8 kW Power Supply Unit will be available in Q1 2025. For more information about the PSU roadmap, please click here.
Infineon at the PCIM Europe 2024
PCIM Europe will take place in Nuremberg, Germany, from 11 to 13 June 2024. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booths #470 and #169. Company representatives will also be giving several presentations at the accompanying PCIM Conference and Forums, followed by discussions with the speakers. Information about Infineon’s PCIM 2024 show highlights is available at www.infineon.com/pcim.
Original – Infineon Technologies
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MCC Semi introduced new high-performance 40V N-channel MOSFETs. These components leverage split-gate trench (SGT) technology and full AEC-Q101 qualification in compact packages.
Both MCU2D8N04YHQ and MCB2D8N04YHQ also boast low on-resistance of only 2.8mΩ, ensuring efficient power management in a diverse range of automotive systems.
These versatile MOSFETs in high-demand DPAK and D2PAK packages ensure a seamless upgrade path with minimal changes for integration within existing designs. Adding to their unquestionable performance in harsh conditions, these components have a high operating junction temperature of up to 175°C.
Whether it’s a battery management system or electric water pump, these new MOSFETs are up for delivering the ultimate in reliability for challenging automotive applications.
Features & Benefits:
- Fully AEC-Q101 qualified
- Split-gate trench (SGT) technology
- Low RDS(on)
- High power density package
- High junction temperature up to 175℃
- Available in compact DPAK and D2PAK packages
Original – Micro Commercial Components
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Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
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Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Original – Infineon Technologies
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STMicroelectronics released automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series which deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.
With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.
In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.
The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.
The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.
Original – STMicroelectronics
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Vishay Intertechnology, Inc. introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency, while enhancing thermal performance, reducing component counts, and simplifying designs.
This dual MOSFET can be used in place of two discrete devices typically specified in the PowerPAK 1212 package — saving 50 % board space. The device provides designers with a space-saving solution for synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimized combination for 50 % duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving.
To increase power density, the MOSFET offers best in class on-resistance down to 18.5 mW typical at 4.5 V. This is 16 % lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mW*nC and on-resistance times gain-drain charge
The device’s flip-chip technology enhances thermal dissipation — resulting in 54 % lower thermal resistance compared to competing MOSFETs. The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 % higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance. The SiZF4800LDT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Competitor Comparison Table:
Part number SiZF4800LDT (New) Competitor SiZF4800LDTPerformance improved Package PowerPAIR 3x3FS PowerPAIR 3x3FS Dimensions (mm) 3.3 x 3.3 x 0.75 3.3 x 3.3 x 0.75 – Configuration Symmetric dual Symmetric dual – VDS (V) 80 80 – VGS (V) ± 20 ± 20 – RDS(on) (mΩ) @ 4.5 VGS Typ. 18.5 22 +16 % Max. 23.8 29 +18 % Qg (nC) @ 4.5 VGS Typ. 7.1 6.0 – FOM – 131 132 +1 % ID (A) Max. 36 26 +38 % RthJC (C/W) Max. 2.2 4.8 +54 % Original – Vishay Intertechnology
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onsemi announced the availability of its 1200V SPM31 Intelligent Power Modules (IPMs) featuring the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology. The SPM31 IPMs deliver higher efficiency, smaller footprint and higher power density resulting in lower total system cost than other leading solutions on the market.
Given the greater efficiency realized using optimized IGBTs, these IPMs are ideal for three-phase inverter drive applications such as heat pumps, commercial HVAC systems, servo motors, and industrial pumps and fans.
Operating residential and commercial buildings is estimated to contribute 26% of greenhouse gas emissions, with indirect emissions such as heating, cooling and powering buildings accounting for approximately 18%. As governments worldwide strive to meet their energy and climate commitments, more energy-efficient and lower-carbon solutions are becoming increasingly critical.
The SPM31 IPMs control the power flow to the inverter compressor and fans in heat pumps and air conditioning systems by adjusting the frequency and voltage of the power supplied to three-phase motors for maximum efficiency. For example, onsemi’s 25A-rated SPM31 using FS7 IGBT technology can decrease power losses by up to 10% and increase in power density up to 9%, compared to our previous generation products.
With the transition to electrification and heightened efficiency mandates, these modules help manufacturers drastically improve system design while increasing efficiency in heating and cooling applications. With the improved performance, our SPM31 IPM family featuring FS7 enables high efficiency with reduced energy losses, further reducing harmful emissions globally.
These highly integrated modules contain gate-driving ICs, multiple on-module protection features along with our FS7 IGBTs enabling industry-leading thermal performance with the ability to support a wide range of currents, from 15A to 35A. With their best-in-class power density, SPM31 FS7 IGBT IPMs are an ideal answer to save mounting space and improve performance expectations while shortening the development time. In addition, the SPM31 IPMs include the following benefits:
- Controls for gate drivers and protections
- Low loss, short-circuit-rated IGBTs
- Negative IGBT terminals available for each phase to support a wide variety of control algorithms
- Built-in under-voltage protection (UVP)
- Built-in bootstrap diodes and resistors
- Built-in high-speed high-voltage integrated circuit
- Single-grounded power supply
Original – onsemi
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Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # VCES IC VCE(ON) Eoff Speed Package @ IC and +125 °C VS-GT100TS065S 650 V 100 A 1.02 V 6.5 mJ DC to 1 kHz INT-A-PAK VS-GT150TS065S 650 V 150 A 1.05 V 10.3 mJ DC to 1 kHz INT-A-PAK VS-GT200TS065S 650 V 200 A 1.07 V 13.7 mJ DC to 1 kHz INT-A-PAK VS-GT100TS065N 650 V 100 A 2.12 V 1.0 mJ 8 kHz to 30 kHz INT-A-PAK VS-GT200TS065N 650 V 200 A 2.13 V 3.86 mJ 8 kHz to 30 kHz INT-A-PAK Original – Vishay Intertechnology
