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Vishay Intertechnology, Inc. introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency, while enhancing thermal performance, reducing component counts, and simplifying designs.
This dual MOSFET can be used in place of two discrete devices typically specified in the PowerPAK 1212 package — saving 50 % board space. The device provides designers with a space-saving solution for synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimized combination for 50 % duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving.
To increase power density, the MOSFET offers best in class on-resistance down to 18.5 mW typical at 4.5 V. This is 16 % lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mW*nC and on-resistance times gain-drain charge
The device’s flip-chip technology enhances thermal dissipation — resulting in 54 % lower thermal resistance compared to competing MOSFETs. The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 % higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance. The SiZF4800LDT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Competitor Comparison Table:
Part number SiZF4800LDT (New) Competitor SiZF4800LDTPerformance improved Package PowerPAIR 3x3FS PowerPAIR 3x3FS Dimensions (mm) 3.3 x 3.3 x 0.75 3.3 x 3.3 x 0.75 – Configuration Symmetric dual Symmetric dual – VDS (V) 80 80 – VGS (V) ± 20 ± 20 – RDS(on) (mΩ) @ 4.5 VGS Typ. 18.5 22 +16 % Max. 23.8 29 +18 % Qg (nC) @ 4.5 VGS Typ. 7.1 6.0 – FOM – 131 132 +1 % ID (A) Max. 36 26 +38 % RthJC (C/W) Max. 2.2 4.8 +54 % Original – Vishay Intertechnology
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onsemi announced the availability of its 1200V SPM31 Intelligent Power Modules (IPMs) featuring the latest generation Field Stop 7 (FS7) Insulated Gate Bipolar Transistor (IGBT) technology. The SPM31 IPMs deliver higher efficiency, smaller footprint and higher power density resulting in lower total system cost than other leading solutions on the market.
Given the greater efficiency realized using optimized IGBTs, these IPMs are ideal for three-phase inverter drive applications such as heat pumps, commercial HVAC systems, servo motors, and industrial pumps and fans.
Operating residential and commercial buildings is estimated to contribute 26% of greenhouse gas emissions, with indirect emissions such as heating, cooling and powering buildings accounting for approximately 18%. As governments worldwide strive to meet their energy and climate commitments, more energy-efficient and lower-carbon solutions are becoming increasingly critical.
The SPM31 IPMs control the power flow to the inverter compressor and fans in heat pumps and air conditioning systems by adjusting the frequency and voltage of the power supplied to three-phase motors for maximum efficiency. For example, onsemi’s 25A-rated SPM31 using FS7 IGBT technology can decrease power losses by up to 10% and increase in power density up to 9%, compared to our previous generation products.
With the transition to electrification and heightened efficiency mandates, these modules help manufacturers drastically improve system design while increasing efficiency in heating and cooling applications. With the improved performance, our SPM31 IPM family featuring FS7 enables high efficiency with reduced energy losses, further reducing harmful emissions globally.
These highly integrated modules contain gate-driving ICs, multiple on-module protection features along with our FS7 IGBTs enabling industry-leading thermal performance with the ability to support a wide range of currents, from 15A to 35A. With their best-in-class power density, SPM31 FS7 IGBT IPMs are an ideal answer to save mounting space and improve performance expectations while shortening the development time. In addition, the SPM31 IPMs include the following benefits:
- Controls for gate drivers and protections
- Low loss, short-circuit-rated IGBTs
- Negative IGBT terminals available for each phase to support a wide variety of control algorithms
- Built-in under-voltage protection (UVP)
- Built-in bootstrap diodes and resistors
- Built-in high-speed high-voltage integrated circuit
- Single-grounded power supply
Original – onsemi
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Vishay Intertechnology, Inc. introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # VCES IC VCE(ON) Eoff Speed Package @ IC and +125 °C VS-GT100TS065S 650 V 100 A 1.02 V 6.5 mJ DC to 1 kHz INT-A-PAK VS-GT150TS065S 650 V 150 A 1.05 V 10.3 mJ DC to 1 kHz INT-A-PAK VS-GT200TS065S 650 V 200 A 1.07 V 13.7 mJ DC to 1 kHz INT-A-PAK VS-GT100TS065N 650 V 100 A 2.12 V 1.0 mJ 8 kHz to 30 kHz INT-A-PAK VS-GT200TS065N 650 V 200 A 2.13 V 3.86 mJ 8 kHz to 30 kHz INT-A-PAK Original – Vishay Intertechnology
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Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST3000GXH35A” with ratings of 4500 V/3000 A for use in high-voltage converters.
The new product ST3000GXH35A has optimized N buffer layer design, thereby reducing approximately 400 V of turn-off-voltage oscillation peak-value (Vcp) at low current, compared with the Toshiba’s existing product. This helps simplify the snubber circuit.
In addition, the measuring voltage of short-circuit pulse-width has been enhanced to 3400 V in response to applications requiring high voltage. This allows facilitating the short-circuit protection design of converters.
Applications
- DC power transmission
- Static VAR compensator
- Industrial motor controller
Features
- Maximum junction temperature rating: Tj (max)=150 °C
- Approximately 400 V reduction in turn-off voltage oscillation peak-value (Vcp) at low current
- Enhanced 3400 V of short-circuit pulse-width
Original – Toshiba
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Vishay Intertechnology, Inc. introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications.
Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK® 1212-F package, the Vishay Siliconix SiSD5300DN provides best in class on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.
Occupying the same footprint as the PowerPAK 1212-8S, the device released today offers 18 % lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
PowerPAK1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimizes the extent of the switching area, which helps to reduce the impact of trace noise.
In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm2 to 4.13 mm2, enabling a commensurate improvement in thermal performance. The PowerPAK1212-F’s center gate design also simplifies parallelization of multiple devices on a single-layer PCB.
The source flip PowerPAK1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.
Original – Vishay Intertechnology
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Micro Commercial Components announced two-in-one IGBT module, MIF400R065C2TL-BP. Available in the C2 package, this new cutting-edge module combines dual IGBT devices and sets the standard for rugged performance. With 650V capability and an ultra-fast and soft recovery anti-parallel rectifier, this module delivers exceptional reliability in high-power applications.
MCC’s IGBT module is a no-brainer for motor controls, uninterruptible power supplies, welding equipment, and other power-intensive applications, thanks to its ability to withstand junction temperatures up to 175°C and a high short-circuit capability of 6us.
Designed with low VCE(sat), IGBT trench technology, and a 400A current rating, this component ensures low switching losses and low inductance while maximizing efficiency.
Features & Benefits:
- Low VCE(sat) with positive temperature coefficient
- Trench IGBT technology
- Low switching losses
- High short-circuit capability (6us)
- Ultra-fast and soft recovery anti-parallel forward diode (FWD)
- Low inductance
- Maximum junction temperature of 175°C
- C2 package
Original – Micro Commercial Components
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VMAX, a leading Chinese manufacturer of power electronics and motor drives for new energy vehicles, has selected the new CoolSiC™ hybrid discrete with TRENCHSTOP™ 5 Fast-Switching IGBT and CoolSiC Schottky Diode from Infineon Technologies AG for its next generation 6.6 kW OBC/DCDC on-board chargers.
Infineon’s components come in a D²PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve a perfect cost-performance ratio for both hard and soft switching topologies. With their superior performance, optimized power density and leading quality, the power devices are ideally suited for VMAX’s on-board chargers.
“We are proud to choose Infineon’s CoolSiC Hybrid device in our next-generation OBC, achieving higher reliability, stability, improved performance, and power density. This deepens our already strong partnership with Infineon and drives technological application innovation through close collaboration, working together to promote the thriving development of new energy vehicles,” said Jinzhu Xu, PL Director& Chief Engineer, R&D Department at VMAX.
“We are excited to strengthen our partnership with VMAX with our highly efficient hybrid products,” said Robert Hermann, Vice President for Automotive High Voltage Chips and Discretes at Infineon. “Together, we will continue to drive e-mobility advancements, providing efficient solutions that meet the requirements of the industry in terms of performance, quality and system cost.”
With its fast, hard switching TRENCHSTOP 5 650 V IGBT co-packed with zero reverse recovery CoolSiC Schottky diode, the hybrid discrete benefits from very low switching losses at switching speeds above 50 kHz. This makes the device an excellent option for high-power electric vehicle charging systems.
In addition, the robust 5 th generation CoolSiC Schottky diode offers increased robustness against surge currents, maximizing reliability. Furthermore, the diffusion soldering of the SiC diode has improved the thermal resistance (R th) to the package for small chip sizes, resulting in increased power switching capability.
With these features, it enables optimum system reliability and longevity, meeting the stringent requirements of the automotive industry. To further maximize compatibility with existing designs, the product also features a pin-to-pin compatible design based on the widely used D²PAK package.
Original – Infineon Technologies
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PANJIT introduced new P-channel and N-channel MOSFETs designed to boost automotive electronic systems. The P-channel MOSFETs, with AEC-Q101 qualification and a high 175°C junction temperature, offer optimal choices for design engineers seeking reliability and simplified circuitry. These MOSFETs, minimizing RDS(ON) and maximizing avalanche ruggedness, are available in flexible packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263, and TO-263-7L).
PANJIT’s N-channel power MOSFETs employ advanced trench technology, delivering excellent figure of merit (FOM), lower RDS(ON), and capacitance. Available in low-profile packages (DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA), these MOSFETs contribute to efficient and reliable PCB layouts.
By combining innovation with reliability, PANJIT’s low voltage MOSFETs simplify power design circuitry, addressing the evolving needs of automotive design engineers.These components are a testament to PANJIT’s commitment to shaping the future of automotive electronics, offering optimal solutions for high-performance automotive applications.
Key Features of 30V & 40V Automotive-Grade P-Channel MOSFET:
• P-channel enhancement mode logic level MOSFETs
• Low RDS(ON) to minimize conduction losses
• Package with low thermal resistance
• 100% unclamped inductive switching (UIS) tested
• Electrostatic sensitive device (ESD) capable
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperature
• Available in TO-263-7L PackageKey Features of 30V & 40V Automotive-Grade N-Channel MOSFET:
• 30V & 40V N-channel advanced trench
• Low RDS(ON) to minimize conduction losses
• Low FOM to minimize driver losses
• Standard and logic level available
• AEC-Q101 qualified and PPAP capable
• 175°C operating junction temperatureOriginal – PANJIT International
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Alpha and Omega Semiconductor Limited (AOS) announced the AONA66916, a 100V MOSFET packaged in the company’s innovatively designed top and bottom side cooling DFN 5 x 6 package. Designers have long trusted AOS power semiconductors as essential components that help them meet a wide variety of high performance application requirements.
Now, in delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.
Typically, when using the standard DFN 5×6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS’ new top and bottom cooling DFN 5×6 package is designed to achieve the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction.
This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5×6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts.
Another benefit of the AONA66916 is that it utilizes AOS’ 100V AlphaSGT™ technology, providing excellent FOM for balanced performance in hard switching applications. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and has a 175°C junction temperature rating.
“Cooling the power MOSFET in high power design can be challenging, and AOS has successfully addressed this essential issue with our advanced top exposed package design. It not only enables better thermal transfer from its top side exposed contact to heat sink due to large exposed surface area, our new package delivers a much cooler device that contributes to a more efficient and robust final design,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
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Mitsubishi Electric Corporation announced the coming release of six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from March 25.
The new power modules will be exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) from January 24 to 26 at Tokyo Big Sight, Japan, as well as other exhibitions in North America, Europe, China and additional locations.
As power semiconductors capable of efficiently converting electricity expand and diversify in response to decarbonization initiatives, the demand is increasing for SiC power semiconductors offering significantly reduced power loss. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors.
In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications.
Development of these SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Original – Mitsubishi Electric
