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onsemi announced that Sineng Electric will integrate onsemi EliteSiC silicon carbide (SiC) MOSFETs and IGBT-based high-density power integrated modules (PIMs) into its utility-scale solar inverter and industry-first 200kW energy storage system (ESS). The two companies worked together to develop optimized solutions that maximize the performance of solar inverters, energy storage and power conversion systems.
Sineng’s work with onsemi EliteSiC has led to the launch of a utility-scale solar string inverter, which offers simplicity in design, reduced maintenance costs and lower downtimes compared to a centralized inverter solution. The adoption of onsemi’s highly optimized single-stage PIM with multi-level topology in 200KW ESS enables industry leading system efficiency and lower total cost of ownership.
“onsemi supports us in solving the most challenging technical problems such as system-level design, simulations, thermal analysis and creation of sophisticated control algorithms,” said Qiang Wu, chairman of Sineng Electric. “Integrating the highly efficient EliteSiC technology enables us to develop and implement cutting-edge renewable energy solutions tailored to our customers’ needs. In combination with onsemi’s end-to-end SiC supply chain, we have the supply assurance to plan for long-term growth.”
Both companies will continue to collaborate on the development of new high-power products to enable a broader range of renewable energy solutions. As part of this process, Sineng will adopt more EliteSiC products, thereby benefitting from efficiency and scale.
“Together, we will leverage the benefits of onsemi’s high performance products and Sineng Electric’s expertise in power electronics system design to deliver industry leading solutions for sustainable energy applications,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Our continuous pursuit to improve overall system efficiency plays a pivotal role in society moving towards the goal of a net-zero emissions future.”
The two companies expect to extend their existing long-term supply agreement (LTSA), signed in late 2022, further demonstrating their commitment to collaboration and innovation.
Original – onsemi
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Nexperia announced a significant raising of the bar in semiconductor engineer design support with the release of next-generation interactive datasheets to accompany its Power MOSFETs. By manipulating interactive sliders within the datasheets, users can manually adjust the voltage, current, temperature and other conditions for their circuit application and watch how the operating point of a device dynamically responds to these changes.
These interactive datasheets effectively offer a type of graphical user interface to a circuit simulator, using Nexperia’s advanced electrothermal models to calculate the operating point of a device. In addition, they allow engineers to visualize immediately the interaction between parameters such as gate voltage, drain current, RDS(on) and temperature. Their collective contribution to the device behavior is then displayed dynamically in tables or graphs. As a result, Nexperia’s interactive datasheets can significantly increase productivity by eliminating the time needed for an engineer to perform manual calculations or set up and debug a circuit simulation.
The datasheet is commonly the first port of call when a design engineer is looking to select a device for an application. However, while they contain a wealth of information, including the minimum, maximum and typical specifications across dozens of device parameters, it is often difficult to determine how these are interrelated. Consequently, engineers must perform time-consuming manual calculations or set up a circuit simulator using models provided by the manufacturer (assuming these are available) to thoroughly investigate a device’s behavior. Even then, many manufacturers’ simulation models do not show the effect of temperature changes on device behavior. The new interactive datasheets from Nexperia support engineers by showing real-time interaction across different parameters as they are manually changed with the easy-to-use datasheet sliders.
Chris Boyce, Senior Director of Nexperia’s Power MOSFET business adds, “Whether you are a Design Engineer looking to see how a device will perform at elevated temperature, or a Component Engineer trying to compare devices under different test conditions, our new interactive datasheets are designed to make your life easier.”
The technology powering these datasheets is the same as that used in Nexperia’s hugely successful precision electrothermal MOSFET models, which demonstrate how the behaviour of discrete MOSFETs changes with temperature. The new interactive datasheets are offered in addition to the traditional static datasheets and operate in any standard web browser without the requirement of additional software for device simulation.
With the initial version currently under patent application, Nexperia will be reaching out to its global community of customer engineers to evaluate how interactive datasheets are used in real-time in order to broaden the functionality of future versions.
More than 200 interactive datasheets are already available, covering the devices in Nexperia’s latest generations of Automotive and Industrial Power MOSFETs. Over time, the Company plans to make them available for its entire portfolio of discrete MOSFETs and other devices. Try a live interactive datasheet in action at nexperia.com/interactive-datasheet
Original – Nexperia
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DENSO CORPORATION (DENSO), a leading mobility supplier, and United Semiconductor Japan Co., Ltd. (“USJC”), a subsidiary of global semiconductor foundry United Microelectronics Corporation (“UMC”), announced a joint collaboration to produce insulated gate bipolar transistors (IGBT), which have entered mass production at the 300mm fab of USJC. A first shipment ceremony was held last week to mark this important milestone. It comes just one year after the companies announced a strategic partnership for this critical power semiconductor used in electric vehicles.
As adoption of electric vehicles accelerates, automakers are seeking to boost powertrain efficiency while also increasing cost-effectiveness of electrified vehicles. The jointly invested line at USJC supports the production of a new generation of IGBT developed by DENSO, which offers 20% reduction in power losses compared with earlier generation devices. Production is expected to reach 10,000 wafers per month by 2025.
The ceremony was held at USJC’s fab in Mie Prefecture, Japan. Attendees included by DENSO President Koji Arima, UMC Co-President Jason Wang, USJC President Michiari Kawano, Director-General of the Commerce and Information Policy Bureau at Japan’s Ministry of Economy, Trade and Industry (METI) Satoshi Nohara, Governor of Mie Prefecture Katsuyuki Ichimi, and Mayor of Kuwana City Narutaka Ito.
“Today, we are thrilled to welcome a memorable shipping ceremony that symbolizes the partnership between DENSO, UMC and USJC. We are from different cultures such as semiconductor industry and automobile industry. However, we have worked steadily with mutual respect which is a source of our strong competitiveness. DENSO, together with our trusted partners, will continue to further accelerate electrification through the production of competitive semiconductors in order to preserve the global environment and create a society full of smiles,” said Koji Arima, President of DENSO.
“USJC is proud to be the first semiconductor foundry in Japan to manufacture IGBT on 300mm wafers, offering customers greater production efficiency than the standard fabrication on 200mm wafers. Thanks to our dedicated teams and support from DENSO, we were able to complete trial production and reliability testing without delay and honor the mass production date as agreed with the customer,” said Michiari Kawano, President of USJC.
“It is an honor to be a strategic partner of DENSO, a leading automotive solution provider to global automakers. This collaboration fully demonstrates UMC’s manufacturing capability and our collaborative approach to ensure the success of our foundry customers,” said Jason Wang, Co-President of UMC. “The electrification and automation of cars will continue to drive up semiconductor content, particularly for chips manufactured using specialty foundry processes on 28nm and above nodes. As a specialty technology leader, UMC is well positioned to play a bigger role in the automotive value chain and enabling our partners to capture opportunities and win market share in this rapidly evolving industry.
Original – DENSO
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Magnachip Semiconductor Corporation (“Magnachip” or “Company”) announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.
Magnachip’s proprietary design provides specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell-pitches of previous generation MOSFETs.
In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (trr) and switching loss. Therefore, the figure of merit to evaluate general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.
Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low RDS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.
“Now that we have introduced these 600V SJ MOSFET products, we are aiming to unveil new 650V and 700V SJ MOSFET products with fast recovery body diode in the second half of 2023,” said YJ Kim, CEO of Magnachip. “These new MOSFETs represent a notable achievement for the Company, and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”
Original – Magnachip Semiconductor
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Alpha and Omega Semiconductor Limited (AOS) announced the release of 600V αMOS7™ Super Junction MOSFETs Family. αMOS7™ is AOS’ next generation high voltage MOSFET, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications.
Today’s Server power supply requires Titanium efficiency, which translates to more than 98.5% peak efficiency on both PFC and LLC stages. Active-Bridges and Bridgeless designs are easy-to-implement solutions; however, switching and driving losses, especially at light load, are still the main problems designers face. Existing technologies limited by large cell pitches and charges could hardly meet such requirements.
Next-gen SJ technologies with reduced charge but also enough robustness is in demand. Low Qrr and Trr for LLC and PSFB applications are also a must during transient and abnormal situations. AOS αMOS7™ High Voltage SJ MOSFET is the best answer for above needs.
For Solar applications, low ohmic SMD devices are becoming the new standards, aiming for reduced form factors through utilizing 3D mechanical and thermal designs. αMOS7™ provides a wide Rdson granularity and SMD package choices, such as DFN, TOLL, and Top-cooling variants.
For low Fsw applications such as Solid-State Relays or Active Bridges, FETs must meet specific SOA requirements to sustain surge and in-rush currents. αMOS7™ ensures low Rdson’s temperature coefficient and ruggedness for transient voltage and current overstresses.
The first product released – AOK050V60A7 is a 600V 50mOhm αMOS7 low ohmic device with the industry-standard TO-247 package tailored for today’s high-power AC/DC, DC/DC, and Solar Inverter stages. As the EU ERP Lot9 regulation pushes the efficiency of single PSUs to Titanium level, AOS αMOS7™ 600V low ohmic family provides an ideal solution for single, interleaved, dual boost, totem-pole, and Vienna PFCs, as well as other hard-switching topologies. The optimized capacitance of AOK050V60A7 will provide customers excellent switching performances, with fast turn-on/turn-off behaviors, while avoiding the risks of self-turn-on or shoot-through. The 50mohm device will be followed by our upcoming 32mohm, 40mohm, 65mohm, and 105mohm devices.
“The new charge balance structure makes it possible to further reduce the active area up to 50%, compared to αMOS5™, our existing solution. In general, αMOS7™ is an industry-leading high voltage SJ solution designed to address both efficiency driven and cost-driven markets,” said Richard Zhang, Senior Director of Product Line and Global Power Supply businesses at AOS.
Technical Highlights:
- Low Ohmic device with ultra-low switching losses
- Rugged Body Diode and FRD options (Reduced Qrr) available for more demanding use cases
- Rugged SOA and in-rush current capability for Solid-State Relay and Active Bridge applications
- Optimized for both High Power and Low Power SMPSes, Solar Inverters, and EV DC Charging applications
Original – Alpha and Omega Semiconductor
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Infineon Technologies AG launched a new automotive power module: The HybridPACK™ Drive G2. It builds on the well-established HybridPACK Drive G1 concept of an integrated B6 package, offering scalability within the same footprint and extending it to higher power and ease-of-use. The HybridPACK Drive G2 will be available with different current ratings, voltage levels (750V and 1200V) and Infineon’s next generation chip technologies EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET.
With a power range of up to 300 kW within the 750 V and 1200 V classes, the HybridPACK Drive G2 provides high ease-of-use and new features, such as an integration option for next-generation phase current sensor and on-chip temperature sensing, which enable system cost improvements. The power module achieves higher performance and power density through improved assembly and interconnect technology. The adoption of new interconnect technology (chip sintering) and of new materials (new black plastic housing) enables higher temperature rating, resulting in higher performance and longer product life.
The first generation (G1) of HybridPACK Drive was introduced in 2017, using silicon EDT2 technology. It offers a power range of 100 kW to 180 kW in the 750 V class. In 2021, Infineon expanded its product family with the first generation of HybridPACK Drive Automotive CoolSiC MOSFETs, which allowed the inverter design to achieve higher power up to 250 kW within the 1200 V class, longer driving range, smaller battery size and optimized system size and cost. With a track record of nearly 3 million units sold in various global electric vehicle platforms, the HybridPACK Drive is now Infineon’s market-leading power module.
The lead products (FS1150R08, FS01MR08, FS02MR12) of the new HybridPACK Drive G2 are in production and will be available starting May 2023, with additional product variants to follow in 2023 and 2024. More information is available at www.infineon.com/hybridpackdrive.
Original – Infineon Technologies
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Mitsubishi Electric Corporation announced that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The dual-type module, which achieves 4.5kV withstand voltage and 10.2kVrms dielectric strength, is rated at 450A, which is believed to be unmatched among 4.5kV silicon HVIGBT modules.
Power semiconductors are increasingly being utilized to efficiently convert electric power in order to lower the carbon footprint of global society, particularly in heavy industry, where these devices are used in power-conversion equipment such as inverters in railway traction systems and for DC power transmission. In response to the growing demand for devices offering high output, high efficiency and wide-ranging output capacity, Mitsubishi Electric released two versions (3.3kV/450A and 3.3kV/600A) of its HV100 dual-type X-Series high-dielectric-strength HVIGBT module in 2021. In the near future, the forthcoming HV100 dual-type X-Series module will contribute to even higher output, higher efficiency and improved system reliability for inverters used in large industrial equipment requiring high dielectric strength.
Original – Mitsubishi Electric
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Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, Semikron Danfoss added ROHM’s new 1200V RGA IGBT to its low power module offering. In doing so, both companies show that they remain committed to serving worldwide motor drive customers’ needs.
The worldwide growth in electrification technologies has created unprecedented demand for power modules. Often, it is the chip supply that limits power module availability. Despite ongoing investments in production capacity by the chip manufacturers, the supply situation remains tight. It is against this backdrop that ROHM has introduced the new 1200V RGA IGBT, targeted as an alternative to the latest Generation 7 IGBT devices in industrial applications. ROHM is now expanding their bare die offering to Semikron Danfoss, positioning themselves as an advanced alternative to traditional chip suppliers.
“The RGA is a newly designed, light punch through, trench gate IGBT with Tj,max = 175°C. The conduction, switching, and thermal characteristics are optimized for new industrial drive applications in the low to medium power range. At the same time, the RGA is intended to remain compatible with existing IGBT solutions, enabling a multiple source approach. In addition, the RGA can also be used to improve transient overcurrent handling during overload conditions in motor drive applications,” says Kazuhide Ino, Member of the Board, Managing Executive Officer, CFO at ROHM.
Semikron Danfoss can offer the 1200V RGA IGBT in a full range of nominal current classes from 10A to 150A. This range, combined with the suitability of the RGA chip in motor drive applications, means that the MiniSKiiP family is the ideal choice for module implementation. The baseplate-less, spring-contact MiniSKiiP is already deeply embedded in the worldwide motor drive market and always equipped with the latest generation IGBTs. Therefore, it is important for this product to have an alternative IGBT source to diversify the supply chain. The uniform-height MiniSKiiP housing family is also offered on the market as a multiple source package, making an alternative IGBT a valuable option for manufacturers.
For press-fit/solder applications, the industry-standard SEMITOP E package will also be available in pin-compatible configurations to existing Generation 7 IGBT module offerings. This housing family will also offer sixpack (“GD”) and converter-inverter-brake (“DGDL”) circuit configurations.
“The power electronics industry continues to recover and learn lessons from the supply issues in recent years. It’s clear that diversification in semiconductor chip and module manufacturing is required to generate true ‘multiple source’ power modules”, says Claus A. Petersen, President, Semikron Danfoss. “In the case of 1200V Generation 7 IGBTs, a reliable equivalent from a reputable manufacturer is now available to address this issue also in the low power range. The 1200V RGA IGBT from ROHM is a perfect alternative to the Generation 7 IGBT and can be made to behave in a remarkably similar manner with small gate resistor adjustment,” continues Peter Sontheimer, Senior Vice President Industry Division & Managing Director at Semikron Danfoss.
Original – Semikron Danfoss
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Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQ5,” which uses the latest generation U-MOSX-H process, for switching power supplies of industrial equipment, such as that used in data centers and communications base stations.
TPH9R00CQ5 features an industry-leading low drain-source On-resistance of 9.0mΩ (max), approximately a 42% reduction from Toshiba’s existing product, “TPH1500CNH1.” Compared with Toshiba’s existing product “TPH9R00CQH,” the reverse recovery charge is reduced by about 74% and the reverse recovery time by about 44%, both key reverse recovery characteristics for synchronous rectification applications. Used in synchronous rectification applications, the new product reduces the power loss of switching power supplies and helps improve efficiency. Furthermore, compared to TPH9R00CQH, the new product reduces spike voltage generated during switching, helping lower the EMI of power supplies.
The product uses the popular, surface-mount-type SOP Advance(N) package.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available.
Toshiba has also developed “1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunications Equipment” and “Three-phase Multi Level Inverter using MOSFET” reference designs that utilize the new product. They are available on Toshiba’s website from today. The new product can also be utilized for the already published “1 kW Full-Bridge DC-DC Converter” reference design.
Toshiba will continue to expand its lineup of power MOSFETs that reduce power loss, increase the efficiency of power supplies, and help to improve equipment efficiency.
Applications:
- Power supplies of industrial equipment, such as that used in data centers and communications base stations.
- Switching power supplies (high efficiency DC-DC converters, etc.)
Features:
- Industry-leading low On-resistance: RDS(ON)=9.0mΩ (max) (VGS=10V)
- Industry-leading low reverse recovery charge: Qrr=34nC (typ.) (-dIDR/dt=100A/μs)
- Industry-leading fast reverse recovery time: trr=40ns (typ.) (-dIDR/dt=100A/μs)
- High channel temperature rating: Tch (max)=175°C
Original – Toshiba
