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Solitron Devices released the SD11740 , 1200V Silicon Carbide (SiC), low RDS(on) MOSFET.
Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a SOT-227 the SD11740 offers ultra-low RDS(on) of 8.6mΩ.
The addition of the SOT-227 style package enables higher power applications for Solitron’s SiC based products in EV, power controllers, motor drive, induction heating, solid state circuit breakers and high voltage power supplies. The SD11740 offers 120A of continuous drain current. The SOT-227 features 3kV isolation to a copper heat sink base for outstanding low thermal impedance. The device provides a real Kelvin gate connection for optimal gate control. Either emitter terminal can be used as main or Kelvin emitter.
Designed for use as a power semiconductor switch the SD11740 outperforms silicon based MOSFETs and IGBTs. The standard gate drive characteristics allow for a true drop-in replacement to silicon IGBTS and MOSFETs with far superior performance. Ultra-low gate charge and exceptional reverse recovery characteristics, make them ideal for switching inductive loads and any application requiring standard gate drive.
Original – Solitron Devices
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Solitron Devices announced the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high reliability applications.
With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while minimizing loop inductance. 60 mil pins for the power output stage are isolated on one side of the package to allow simple power bussing while 30 mil pins are on the opposite side for control signals.
The SD11487 is a half bridge configuration with two 1200V 12mΩ SiC MOSFETs. Also included in the module are two freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs and an integrated NTC temperature sensor. Continuous drain current is specified at 95A.
With operating temperatures of -55°C to 175°C, the SD11487 is designed for the most demanding applications such as down hole exploration; space; and avionics. The hermetically sealed copper package combined with the Alumina Nitride direct bond copper substrate provide excellent thermal conductivity as well as case isolation. The integrated temperature sensing enables high level temperature protection.
Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Original – Solitron Devices
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Solitron Devices has acquired Micro Engineering Inc. located in Apopka, FL. Specializing in highly integrated, high reliability assemblies, Micro Engineering has over forty years of experience servicing medical, industrial, and aerospace applications.
Focused on low to mid volume production, Micro Engineering offers services from conceptual design and prototyping to full turnkey manufacturing and functionally tested assemblies. Additional services include hand assembly, wire harnessing, specialized coatings and full box builds.
Mark Matson, Solitron President & COO, said, “Micro Engineering is an exceptionally synergistic fit with Solitron, expanding and complimenting engineering and manufacturing capabilities. Solitron’s expertise with chip and wire, silicon carbide and high-density multi-chip modules combined with Micro Engineering’s PCBA, SMT and system level box build capability offers a strong suite of technology to customers.
This new capability for increased functionality and power density will accelerate introductions into emerging markets particularly utilizing Silicon Carbide (SiC) and Gallium Nitride (GaN). The combination of Solitron and Micro Engineering will also broaden both companies’ presence in medical, high end industrial and aerospace applications.”
Combined manufacturing capabilities now include 3D CAD modelling, 3D Printing, CAE machining, aluminum & gold wire bonding, void free soldering, fine pitch SMT for BGA’s, rigid, flex and double-sided circuit card assemblies; right up through full box builds. Product qualification infrastructure includes thermal shock, vibration, mechanical shock, centrifuge, salt spray atmosphere, burn-in and more. Micro engineering is ISO-9001 registered.
Original – Solitron Devices
