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STMicroelectronics introduced 100V trench Schottky rectifier diodes that boost efficiency in power converters operated at high switching frequencies.
Raising power-converter operating frequency, encouraged by the minimal switching losses of technologies like wide-bandgap semiconductors, allows designers to set new benchmarks in power density. However, at elevated frequencies, the energy losses in conventional planar diodes, including silicon Schottky devices, used as rectifiers become a significant factor limiting conversion efficiency.
ST’s trench Schottky diodes significantly reduce the rectifier losses, with superior forward-voltage and reverse-recovery characteristics that enable increased power density with high efficiency. The forward voltage is 50-100mV better than in comparable planar diodes, depending on current and temperature conditions. Simply changing to these devices can increase the efficiency by 0.5%.
There are 28 variants in the new family, with eight current ratings from 1A to 15A, multiple surface-mount packages, in industrial and automotive grades. The industrial-grade parts target applications such as miniature switched-mode power supplies and auxiliary power supplies for telecom, server, and smart-metering equipment.
In automotive, typical uses include space-constrained applications such as LED lighting, reverse-polarity protection, and low-voltage DC/DC converters. The parts are AEC-Q101 qualified, manufactured in PPAP-capable facilities, and specified from -40°C to 175°C.
When combined with ST’s flyback and buck-boost converters, such as the VIPer controllers and HVLED001A offline LED driver, the 100V trench Schottky rectifiers fulfil the active-components bill of materials for switched-mode power supplies. All are supported in ST’s eDesign Suite Rectifier Diodes Simulator, which helps to select the rating and footprint, simulate waveforms, and estimate power efficiency.
The diodes are 100% avalanche tested in production to ensure device robustness and system reliability. They are available in DPAK as well as SOD123 Flat, SOD128 Flat, SMB Flat, and PSMC (TO227A) surface-mount packages.
Original – STMicroelectronics
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STMicroelectronics announced a collaboration with Compuware Technology Inc, (Compuware), a leading provider of high-efficiency power supplies, on a reference design for server power using ST’s industry-leading silicon carbide (SiC), galvanic isolation, and microcontroller technologies. This reference design provides unparalleled power-supply options for digital power converter applications including server, datacenter and telecom power.
As demand for digital services continues to grow, fueled by Artificial Intelligence (AI), 5G, and the Internet of Things (IoT), keeping power usage under control is an important piece of the sustainability puzzle for data centers. The STDES-3KWTLCP reference design is perfect for a 3kW and higher wattage CRPS (Common Redundancy Power Supply) server power supply. This technical advancement comes with superior efficiency, faster switching, reduced energy losses, and better thermal management capabilities. In addition, this total system solution shortens time-to-market.
Compuware stands as a global power supply leader, holding the world record for the highest number of 80 PLUS Titanium certifications, ensuring unparalleled power efficiency. Engineered for excellence, Compuware power solutions are the ideal choice for HPC, AI, Deep Learning, Cloud, and advanced applications. With high power density, it optimizes space usage without compromising reliability and efficiency, setting a new performance standard in demanding computing environments.
“Combining ST’s latest SiC MOSFET, galvanic isolation, and microcontroller technologies with Compuware’s leading-edge power energy expertise is helping Compuware unleash our design creativity to develop high-density and -efficiency solutions. Now we can achieve 89W/in.3 power density, a small size, and high power output, this reference design is a great choice for power-hungry, high-performance computing applications,” according to Robin Cheng, Vice President at Compuware.
“With a focus on the Industrial market, ST’s Power & Energy Competence Center provides low-power, mid-power, and high-power solutions with the most advanced ST technologies to our customers, and this reference design- STDES-3KWTLCP can help our customers increase energy efficiency and reduce time-to-market using ST’s efficient and reliable power solutions,” said Eric Chou, Head of Power & Energy Competence Center at STMicroelectronics.
Original – STMicroelectronics
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STMicroelectronics released automotive-grade 600V/650V super-junction MOSFETs in STPOWER MDmesh DM9 AG series which deliver superior efficiency and ruggedness for on-board chargers (OBCs) and DC/DC converter applications in both hard- and soft-switching topologies.
With outstanding RDS(on) per die area and minimal gate charge, the silicon-based devices combine low energy losses with outstanding switching performance, setting a new benchmark figure of merit. Compared to the previous generation, the latest MDmesh DM9 technology ensures a tighter gate-source threshold voltage (VGS(th)) spread that results in sharper switching for lower turn-on and turn-off losses.
In addition, body-diode reverse recovery is improved, leveraging a new optimized process that also increases the MOSFETs’ overall ruggedness. The diode’s low reverse-recovery charge (Qrr) and fast recovery time (trr) make the MDmesh DM9 AG series ideal for phase-shift zero-voltage switching topologies that demand the utmost efficiency.
The family offers a selection of through-hole and surface-mount packages that help designers achieve a compact form factor with high power density and system reliability. The TO-247 LL (long-lead) is a popular through-hole option that eases design-in and leverages proven assembly processes. Among the surface-mount packages, the H2PAK-2 (2 leads) and H2PAK-7(7 leads) are optimized for bottom-side cooling with thermal substrates or PCBs featuring thermal vias or other enhancement. HU3PAK and ACEPACK™ SMIT topside-cooled surface-mount packages are also available.
The first device in the new STPOWER MDmesh DM9 AG series is the STH60N099DM9-2AG, a 27A AEC-Q101 qualified N-channel 600V device in H2PAK-2, with 76mΩ typical RDS(on). ST will expand the family to provide a full range of devices, covering a broad range of current ratings and RDS(on) from 23mΩ to 150mΩ.
Original – STMicroelectronics
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STMicroelectronics N.V. reported U.S. GAAP financial results for the fourth quarter ended December 31, 2023. STMicroelectronics reported fourth quarter net revenues of $4.28 billion, gross margin of 45.5%, operating margin of 23.9%, and net income of $1.08 billion or $1.14 diluted earnings per share.
Jean-Marc Chery, STMicroelectronics President & CEO, commented:
- “FY23 revenues increased 7.2% to $17.29 billion. Operating margin was 26.7% compared to 27.5% in FY22 and net income increased 6.3% to $4.21 billion. We invested $4.11 billion in net CAPEX while delivering free cash flow of $1.77 billion.”
- “In Q4, ST delivered revenues and gross margin slightly below the mid-point of the guidance, with higher revenues in Personal Electronics offset by a softer growth rate in Automotive.”
- “In Q4, our customer order bookings decreased compared to Q3. We continued to see stable end-demand in Automotive, no significant increase in Personal Electronics, and further deterioration in Industrial.”
- “Our first quarter business outlook, at the mid-point, is for net revenues of $3.6 billion, decreasing year-overyear by 15.2% and decreasing sequentially by 15.9%; gross margin is expected to be about 42.3%.”
- “For 2024, we plan to invest about $2.5 billion in net CAPEX.”
- “We will drive the Company based on a plan for FY24 revenues in the range of $15.9 billion to $16.9 billion. Within this plan, we expect a gross margin in the low to mid-40’s.”
Original – STMicroelectronics
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STMicroelectronics has been awarded “Top Employer” of the year in Italy for the third consecutive time. This award is the official recognition to companies excellent in HR policies and strategies and in their implementation to contribute to the well-being of emplyees, and improve the working environment.
In Italy STMicroelectronics has 13 sites with more than 12,500 employees, more than 3,400 in R&D.
On top of that, STMicroelectronics has been named “Top Employer” in France for the fourth time in a row.
Every year, the Top Employers Institute program certifies companies according to their participation and their results in the “HR Best Practices Survey”. This survey covers 6 major HR areas divided into 20 themes such as talent management strategy, the work environment, talent acquisition, training and skills development, well-being at work, or diversity and inclusion.
This year, the program has certified more than 2,300 companies worldwide present in 121 countries, with more than 12 million employees impacted. STMicroelectronics is one of the 110 companies that have received the certification in France.
Original – STMicroelectronics and STMicroelectronics
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STMicroelectronics announced its new organization, effective February 5th, 2024.
“We are re-organizing our Product Groups to further accelerate our time-to-market and speed of product development innovation and efficiency. This will enable us to increase value extraction from our broad and unique product and technology portfolio. In addition, we are getting even closer to our customers with an application marketing organization by end market which will boost our ability to complement our product offering with complete system solutions” said Jean-Marc Chery, President and CEO of STMicroelectronics. “This is an important step in the development of our established strategy, in line with our value proposition to all stakeholders and with the business and financial ambitions we set back in 2022”.
Moving from three to two Product Groups to further enhance product development innovation and efficiency, and time-to-market
The two new Product Groups will be:
- Analog, Power & Discrete, MEMS and Sensors (APMS), led by Marco Cassis, ST President and member of the Executive Committee; and
- Microcontrollers, Digital ICs and RF products (MDRF), led by Remi El-Ouazzane, ST President and member of the Executive Committee.
The APMS Product Group will include all ST analog products, including Smart Power solutions for automotive; all ST Power & Discrete product lines including Silicon Carbide products; MEMS and Sensors.
APMS will include two Reportable Segments: Analog products, MEMS and Sensors (AM&S); Power and discrete products (P&D).The MDRF Product Group will include all ST digital ICs and microcontrollers, including automotive microcontrollers; RF, ADAS, Infotainment ICs. MDRF will include two Reportable Segments: Microcontrollers (MCU); Digital ICs and RF Products (D&RF).
Concurrent with this new organization Marco Monti, ST President of the former Automotive and Discrete Product Group, will leave the Company.
To complement the existing Sales & Marketing organization, a new application marketing organization by end market will be implemented across all ST Regions. This will provide ST customers with end-to-end system solutions based on the Company’s product and technology portfolio.
The company is implementing an application marketing organization by end market across all ST Regions, as part of its Sales & Marketing organization led by Jerome Roux, ST President and member of the Executive Committee. The application marketing organization will cover the following four end markets:
- Automotive
- Industrial Power and Energy
- Industrial Automation, IoT and AI
- Personal Electronics, Communication Equipment and Computer Peripherals.
The current regional Sales & Marketing organization remains unchanged.
Original – STMicroelectronics
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STMicroelectronics has signed a long-term silicon carbide (SiC) supply agreement with Li Auto, a leader in China’s new energy vehicle market that designs, develops, manufactures, and sells smart premium electric vehicles. Under this agreement, STMicroelectronics will provide Li Auto with SiC MOSFET devices to support Li Auto’s strategy around high-voltage battery electric vehicles (BEVs) in various market segments.
As the automotive industry transforms towards electrification and decarbonization, high-voltage BEVs have become a popular choice for car makers. These vehicles offer outstanding energy efficiency and extended mileage. Li Auto, known for its extended-range electric vehicles (EREVs), is entering the BEV market with its first-ever high-tech flagship family MPV BEV model premiered in Q4 2023. With plans to introduce more high-voltage BEV models soon, Li Auto will require high volumes of SiC MOSFETs that it will integrate into its traction inverters to ensure superior electric-vehicle performance.
ST’s SiC devices increase performance and efficiency through higher switching frequencies, breakdown voltages, and thermal resistance. These are all particularly critical characteristics at the higher operating voltages required for battery electric vehicles. Li Auto is adopting ST’s advanced third-generation 1200V SiC MOSFET in the traction inverter of its upcoming 800V BEV platform, to ensure industry-leading process stability and performance, efficiency, and reliability.
“Li Auto is committed to providing families with premium EVs exceeding their expectation. This agreement with ST stands as a testament to Li Auto’s unwavering dedication in BEV product development. Collaborating with the renowned global leader in SiC technologies, we anticipate a forthcoming relationship filled with innovation and success,” said Qingpeng MENG, Vice President of Supply Chain, Li Auto.
Holding more than 50% market share in SiC MOSFETs worldwide, ST’s SiC technology has earned high praise from top OEMs for its electric-vehicle performance. It is widely used in onboard chargers and power modules.
“As a world leader in power devices and wide bandgap semiconductor technologies, ST has established long-term supply agreements with major car makers and Tier 1 suppliers. The SiC supply agreement with Li Auto marks a significant step building upon our existing long-term relationship in other automotive applications,” said Henry CAO, Executive Vice President of Sales & Marketing, China Region, STMicroelectronics. “ST is committed to supporting Li Auto’s ambition to become a top premium electric vehicle brand in China, offering their customers superior vehicle performance and range with our innovative SiC technologies.”
Original – STMicroelectronics
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STMicroelectronics’ MasterGaN1L and MasterGaN4L introduce the next generation of integrated gallium-nitride (GaN) bridge devices that simplify power-supply design leveraging wide-bandgap technology to achieve the latest ecodesign targets.
ST’s MasterGaN family combines 650V GaN high electron-mobility transistors (HEMT) with optimized gate drivers, system protection, and an integrated bootstrap diode that helps power the device at startup. Integrating these features saves designers tackling the complex gate-drive requirements of GaN transistors. Housed in a compact power package, the devices also enhance reliability, cut the bill of materials, and ease circuit layout.
The latest devices contain two GaN HEMTs connected in half-bridge configuration. The arrangement is suitable for building switched-mode power supplies, adapters, and chargers with active-clamp flyback, active-clamp forward, and resonant converter topologies.
The MasterGaN1L and MasterGaN4L are pin compatible with MasterGaN1 and MasterGaN4 respectively. Compared to the earlier devices, they have a newly optimized turn-on delay that allows working at higher frequency and higher efficiency with low load, especially in resonant topologies.
The inputs accept signal voltages from 3.3V to 15V, with hysteresis and pull-down that facilitate connecting directly to a controlling device such as a microcontroller, DSP, or Hall-effect sensors. A dedicated shutdown pin helps designers save system power and the two GaN HEMTs have accurately matched timing with an interlocking circuit to prevent cross-conduction conditions.
The MasterGaN1L HEMTs have 150mΩ RDS(on) and 10A rated current, for use in applications up to 500W. Consuming just 20mW no-load power, and enabling high conversion efficiency, they enable designers to meet stringent industry targets for standby power and average efficiency. The MasterGaN4L HEMTs target applications up to 200W, with 225mΩ RDS(on) and rated current of 6.5A.
The EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards are available to help evaluate the features of each device. These boards contain a GaN-based half-bridge power module fine-tuned to work in an LLC application. They help quickly create new topologies leveraging the MasterGaN1L and MasterGaN4L devices without needing a complete PCB design.
Original – STMicroelectronics
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LATEST NEWS / PROJECTSSTMicroelectronics Signed a 15 year Power Purchase Agreement with ERG for Supply of Renewable Energy
November 24, 2023
2 Min ReadSTMicroelectronics and ERG, a leading European independent producer of energy from renewable sources, through its subsidiary ERG Power Generation, announced that they have signed a fifteen-year Power Purchase Agreement (PPA) for the supply of renewable energy to its operations in Italy over the 2024-2038 timeframe. In Italy, ST operates two high-volume semiconductor manufacturing sites in Agrate (near Milan) and Catania as well as multiple R&D, design, and sales and marketing sites.
The agreement is based on the sale by ERG of approximately 250 GWh of renewable energy per year, equivalent to a total volume of 3.75 TWh over 15 years, produced by the Sicilian wind farms of Camporeale near Palermo and Mineo-Militello-Vizzini near Catania. Both are repowering projects – upgraded with state-of-the art technologies for better efficiency and significantly higher power generation with a total installed capacity of 151.4 MW.
Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented: “This agreement marks yet another important step towards ST’s goal of becoming carbon neutral in its operations (Scope 1 and 2 emissions, and partially scope 3) by 2027, including the sourcing of 100% renewable energy by 2027. PPAs will play a major role in our transition. Starting in 2024, this PPA with ERG will provide a significant level of renewable energy for ST’s operations in Italy, which includes R&D, design, sales and marketing and large-volume chip manufacturing.”
Paolo Merli, Chief Executive Officer of ERG commented: “We are pleased with this agreement with STMicroelectronics, a leading global technology operator committed, like ERG, to decarbonizing the planet through the use of renewable energy in its industrial processes. This agreement allows us to enhance, following the Partinico-Monreale wind farm, two additional repowering projects through energy sales mechanisms capable of stabilizing revenues, in line with current market standards, ensuring the proper remuneration of invested capital”.
More information about ST’s energy and climate change commitments is available here.
STMicroelectronics was supported by its PPA advisory partners act renewable GmbH, renewable energy consultancy to multinational corporates, Pexapark AG, a renewables market intelligence, software and advisory company, and Parola Associati, external legal counsel.
Original – STMicroelectronics
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STMicroelectronics is holding its first-ever ST Taiwan Tech Day at the Taipei New Horizon on November 2. The event is designed to provide valued customers and partners with the most up-to-date information on ST products and solutions to facilitate innovation and achieve success.
With the theme “Our Technology Starts with You,” this extensive technology event will offer insightful speeches and showcase over 40 demonstrations centered around four mega trends: Smart Mobility, Power & Energy, IoT & Connectivity, and Sensing the World. Attendees can experience first-hand the latest innovations and learn how ST’s technologies are contributing to a safer, greener, and more connected world. It will also be a great opportunity to help developers and innovators stay ahead of the curve in today’s rapidly evolving market.
Innovation highlights
Smart Mobility
Zonal Gateway: Zonal Gateway acts as a bridge between the automotive central computer and traditional signal-based ECUs. This technology is supported by ST’s wide range of automotive-grade products and enables Service-Oriented Architecture (SOA) with Data Distribution Service (DDS) protocol and Firmware Over-The-Air (FOTA). The Zonal Gateway offers a solution for modernizing automotive systems, allowing for seamless communication between different components and enabling efficient and secure updates.3rd-Generation SiC Modules: The industry leader in Silicon Carbide (SiC), ST offers a wide range of solutions to help developers improve the power efficiency and reduce the size and weight of automotive inverters with its 3rd-generation SiC modules. The traction inverter is a critical component in electric vehicles as it converts energy from the battery to drive the motors in the drivetrain.
These converters must handle high power and currents, provide fail-safe operation, and handle EMC challenges. Alongside the SiC modules, ST’s range of solutions includes AEC-Q101 qualified IGBTs, silicon and silicon-carbide MOSFETs and diodes, AEC-Q100 qualified galvanically isolated IGBT and MOSFET gate drivers, and SPC5 32-bit automotive microcontrollers. These offerings enable scalable, cost-effective, and energy-efficient EV traction inverter solutions.
Power & Energy
Digital Power: ST’s digital power solution is a comprehensive set of reference designs that empower designers to create efficient, feature-rich power supplies for a wide range of applications. The demo highlights two powerful solutions: the 25kW DAB DC/DC converter with ST’s ACEPACK module, a highly efficient and reliable power converter ideal for industrial and automotive applications, and the 30kW Gen3 SiC MOSFET three-phase interleaved LLC solution with an STM32G4 MCU for ultra-high voltage EV charger — a cutting-edge power supply designed to provide ultra-fast charging for electric vehicles.With these solutions, designers can create custom power systems that are efficient, reliable, and tailored to their specific needs.
Precision Position Control: ST is a leading technology provider for motor control and servo drives, offering power device technologies, computational processing, isolated devices, industrial safety, ecosystem for industrial automation, connectivity, and predictive maintenance. With ST’s state-of-the-art motor-control technologies, the motor can precisely control movement to a specific position.
The demo consists of two small BLDC motors that can hold two shapes that do not fit together when they are in phase. The precision motor-control algorithm enables the rotation and movement of the shapes towards each other at any time, offsetting the relative position of the two shapes by 90 degrees while rotating. This unique position allows coupling between the shapes, with a rotation speed that ensures the phase shift is not noticeable, demonstrating precision position control in a harmonic movement coordinated simultaneously with other shapes.
IoT & Connectivity
Edge AI Washing Machine Solution: This solution utilizes artificial intelligence (AI) to achieve unparalleled levels of energy and water efficiency by accurately measuring the weight of clothes inside the machine. The AI model generated by ST’s NanoEdge AI Studio significantly improves measurement accuracy compared to traditional algorithms by analyzing and learning the features of current signals. This technology can advance the washing-machine industry to a next level by optimizing energy and water consumption while providing more accurate measurements.Compact Production Line with IO-Link System: The IO-Link automated product line demonstrates ST’s total solution application in a smart factory, utilizing IO-Link technology to manage digital input/output, sensors, and solenoid air valve drivers. The demos include digital IO boards, sensor boards, and actuator boards from ST’s Automation Competence Center’s reference demo boards. The IO-Link products simplify the installation, setup, maintenance, and repair of factory automation systems, enhancing system flexibility to produce different product models. The IO-Link diagnostic function enables smarter and more reliable factory operations.
Sensing the World
3D Sensing Solutions: ST showcases the advanced imaging capabilities of the 3D stereo-vision camera solutions for machine-vision applications. The eYs3D stereo camera reference design features ST’s high-performance, near-infrared VD56G3 global-shutter image sensors, ensuring the highest quality depth sensing and point-cloud creation.Additionally, the VD55H1 low-noise, low-power, indirect Time-of-Flight (iToF) sensor die, manufactured using advanced backside-illuminated, stacked-wafer technology, enables the creation of a small form-factor 3D camera capable of producing high-definition depth maps with a typical ranging distance of up to 5 meters in full resolution and beyond 5 meters with patterned illumination. This demo highlights ST’s commitment to providing cutting-edge technology for machine-vision applications.
ISPU for personal electronics: ISPU (Intelligent Sensor Processing Unit) is a new processing category embedded in ST’s LSM6DSO16IS MEMS module. It is an ultra-low-power, high-performance programmable core that can execute signal processing and AI algorithms in real-time. The ISPU offers C programming and an enhanced ecosystem with libraries and 3rd-party tools/IDE, making it a state-of-the-art feature for any personal electronics.
In addition to the insightful speeches and exciting technology showcase, more than 20 in-depth technical presentations covering Smart Mobility, Power and Energy, and IoT and Connectivity will provide a close look at the cutting-edge technologies that are shaping our world.
To learn more about the exciting demos and program, please visit the ST Taiwan Tech Day event page.
Original – STMicroelectronics
