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STMicroelectronics N.V. reported U.S. GAAP financial results for the third quarter ended September 30, 2023. ST reported third quarter net revenues of $4.43 billion, gross margin of 47.6%, operating margin of 28.0%, and net income of $1.09 billion or $1.16 diluted earnings per share.
Jean-Marc Chery, ST President & CEO, commented:
- “Q3 net revenues of $4.43 billion came in above the midpoint of our business outlook range, and Q3 gross margin of 47.6% was slightly above guidance.”
- “Q3 net revenues increased 2.5% year-over-year. As expected, the revenue performance was driven mainly by continued growth in Automotive, partially offset by lower revenues in Personal Electronics.”
- “On a year-over-year basis, gross margin remained stable at 47.6%, while, as expected, operating margin decreased to 28.0% from 29.4% and net income was stable at $1.09 billion.”
- “First nine months net revenues increased 11.1% year-over-year, driven by growth in ADG and MDG Product Groups, partially offset by a decline of AMS Product Group. Operating margin was 27.6% and net income was $3.14 billion.”
- “Our fourth quarter business outlook, at the mid-point, is for net revenues of $4.30 billion, declining year-overyear and sequentially by about 3%; gross margin is expected to be about 46%.”
- “The midpoint of this outlook translates into full year 2023 revenues of about $17.3 billion, representing 7.3% year-over-year growth and a gross margin of about 48.1%.”
Original – STMicroelectronics
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STMicroelectronics has released the ACEPACK DMT-32 family of silicon carbide (SiC) power modules in a convenient 32-pin, dual-inline, molded, through-hole package for automotive applications. Targeted at systems such as on-board chargers (OBC), DC/DC converters, fluid pumps and air conditioning, they deliver advantages including high power density, very compact design, and simplified assembly. The product family enhances flexibility for system designers by presenting a choice of four-pack, six-pack, and totem-pole configurations.
The modules contain 1200V SiC power switches that leverage ST’s state-of-the-art, second- and third-generation SiC MOSFET technology ensuring low RDS(on) values. The devices deliver efficient switching performance with minimal dependence on temperature to ensure high efficiency and reliability at converter system level.
Leveraging ST’s proven, robust ACEPACK technology, the modules reduce overall system- and design-development costs while ensuring outstanding reliability. The package technology features a high-performance aluminum nitride (AlN) insulated substrate for excellent thermal performance. There is also an integrated NTC sensor that provides temperature monitoring for thermal protection.
The first product in ACEPACK DMT-32, introduced today with ramp-up to volume production since Q4’23, is M1F45M12W2-1LA. The M1F80M12W2-1LA, M1TP80M12W2-2LA, M1P45M12W2-1LA, M1P80M12W2-1LA, M1P30M12W3-1LA are sampling now with ramp-up to volume production starting from Q1’24.
Original – STMicroelectronics
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STMicroelectronics will host its Industrial Summit 2023 at the Futian Shangri-La Hotel, in Shenzhen, China, on Sep 28.
In recognition of the extraordinary climate-related challenges, ST has long been guided by its unwavering commitment to sustainability. The Company is actively working to increase power efficiency with its cutting-edge solutions for diffused intelligence (Digitalization) and Energy and Power Conversion, forging a path towards reduced carbon emissions and a sustainable future.
The Industrial Summit is the industry’s premier technology showcase of ST’s Industrial products and solutions. The theme of this year’s event is “Powering Your Sustainable Innovation.” Visitors will hear about the Company’s focus on Smart Power and Smart Digitalization during insightful keynotes and about 30 technical sessions, while also having the chance to experience over 150 demos focused on 3 market segments: Automation, Power & Energy, and Motor Control. The Summit will also host a number of showstoppers developed in close collaboration with ST’s customers and partners.
Innovation highlights in the key focus areas
To provide ST’s Industrial customers in Asia with strong and efficient support for their development activities, ST operates three dedicated Industrial Competence Centers focused on Motor Control, Automation, and Power and Energy that are located close to customers. At Industrial Summit 2023, ST and its customers and partners will showcase multiple innovations listed below leveraging expertise and system-level solutions from these three industrial Competence Centers.
Microgrid: Microgrid is a distributed grid network that is connected to renewable sources and energy storage to minimize energy transmission loss and provide efficient energy utilization while maintaining the benefits of grid connection. ST joined forces with customers to showcase a Microgrid application with multiple energy generation and storage solutions including a photovoltaic (PV) optimizer, a string inverter, a micro-inverter, a hybrid inverter with energy storage, stand-alone energy storage, and an energy-usage example using EV charging stations.
A list of the advanced technologies ST used in this multiapplication demo includes a full range of industry-leading STM32 MCUs, breakthrough wide bandgap power technologies such as Silicon Carbide (SiC) and Gallium nitride (GaN), power metering products, and power-line communication (PLC) controllers. In particular, GaN power discretes and system-in-package devices like ST’s MasterGaN and Sti2GaN are expected to be the preferred technology for future residential PV+ energy storage system (ESS) applications that require high power density and energy efficiency.
KNX Energy Management System: KNX is a global standard with high compatibility and a huge supplier base, making it ideal for the efficient energy system in buildings. At the Industrial Summit, ST will showcase how a KNX Energy-Management System manages energy consumption and generation from various energy sources, such as Solar Inverters, Microgrid, and Battery Storage, for all aspects of applications in buildings, home appliances, and EV charging stations. The KNX Energy-Management System can play an important role in achieving carbon neutrality, enabling energy production and consumption tracking, as well as static and dynamic load management.
By adopting this system, users can proactively decide whether renewable energy should be consumed or stored, while the system provides an optimized energy solution based on user needs. STKNX is a highly competitive KNX transceiver used in a wide range of KNX products from many manufacturers. In addition, ST’s best-in-class MCU, SiC and GaN power technologies, and power conversion ICs are also utilized in this energy-management system.
Servo Drives Orchestra: According to the International Energy Agency (IEA), 53% of global electricity is consumed by motors, which makes motor-control efficiency among the most effective targets for sustainability benefits. On top of better energy performance of the motors themselves, great potential for improvement lies in how electric motors are integrated into industrial equipment and systems.
At the Summit, ST will showcase its most comprehensive motor-control demo – the Servo Drives Orchestra. This solution comprises 8 reference designs with loads ranging from 500W to 22kW. Each of the motors controls a rope that pulls a load and demonstrates high-precision position control, in harmonic movement coordinated simultaneously with the other motors. Each motor drive executes the commands sent by I/O link from the podium where an HMI (Human Machine Interface) controls the mode selection while each drive controller collects temperature and vibration data, executes condition-monitoring algorithms, and wirelessly sends data to the Baidu Cloud. The cloud then reports back system behavior and power savings, among other parameters.
ST is a leading technology provider for servo drives, power-device technologies, computational processing, isolation devices, industrial safety product, and for ecosystems, and for Industrial Automation, Predictive Maintenance, and Connectivity. The Servo Drives Orchestra demo uses an STM32 microcontroller, ST drivers, as well as SiC and GaN power solutions for overall efficiency improvement.
Efficient Transformation to Factory Automation: The use of IO-Link products in factory automation systems can simplify the installation, setup, maintenance, and repair processes, while also contributing to increased production efficiency, energy savings, and carbon neutrality. ST is committed to providing a complete solution for any IO-Link device applications, including a free IO-Link device mini stack, to help manufacturers optimize their operations and achieve greater sustainability.
ST will feature an Automated packing machine with automatic printing and labeling functions for smart factories that utilizes the Company’s IO-Link technology to manage digital input/output, sensors, and solenoid air valve drivers. The system is controlled by a PLC (Programmable Logic Controller), and the system status can be displayed and controlled on an HMI. By connecting the system to a LoRa node, the machine can be remotely monitored and controlled through the IoT Cloud via a LoRa Gateway. The machine uses Digital IO boards, sensor boards, and actuator boards developed by ST Automation Competence Center, demonstrating the comprehensive ST portfolio in action.
Original – STMicroelectronics
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At its annual Technology Summit in Europe beginning September 27th, GlobalFoundries (GF), is highlighting key advancements to its technology platforms and solutions that will enable better power efficiency, enhanced performance and security for applications across critical end markets including IoT, smart mobile and automotive. These milestones highlight GF’s semiconductor manufacturing leadership in product development, validation and market readiness for critical applications in IoT, 5G and 6G smartphones, and electric vehicles.
Building upon the GF Technology Summit in North America this past August, the sessions in Munich will focus on leading at the edge, manufacturing semiconductors in a digital, AI-driven, world through the evolving landscape of communications infrastructure and the electrification of vehicles.
GF’s President and CEO, Dr. Thomas Caulfield, will kick-off the event with a keynote address entitled “Essential chips fuel the era of AI,” which emphasizes the transformative potential of these technologies and their significance in the rapidly evolving semiconductor landscape. In addition, Peter Schiefer, Infineon Division President Automotive, Jean-Marc Chery, President and CEO of STMicroelectronics and Karsten Schnake, Board Member for Procurement at of ŠKODA AUTO & Head of Project COMPASS at Volkswagen AG will take the stage.
Dr. Thomas Caulfield, joined by leaders in the fabless semiconductor and end-markets industries, will also share GF’s corporate vision for manufacturing the essential chips we rely on to live, work, and connect. In addition, GF’s technology and product management leaders, accompanied by partners in the semiconductor design and manufacturing ecosystem, will outline the company’s technology and solutions roadmap.
Held at the Sofitel Munich Bayerpost, the two-day summit also introduces a new format. This year, representatives from GF’s Technology, Business, and Commercial teams are on hand to host small group meetings, facilitating deeper discussions and partnerships with GF customers.
Original – GlobalFoundries
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Nicolas Dufourcq, Chairman of the Supervisory Board of STMicroelectronics N.V., and Maurizio Tamagnini, Vice-Chairman, have asked Jean-Marc Chery, ST’s President and CEO, to be available for a reappointment in his current role. Mr. Chery has accepted the proposal.
Therefore, the Supervisory Board has decided to propose for shareholder approval at the Company’s 2024 Annual General Meeting of Shareholders, the reappointment for a three-year mandate of Jean-Marc Chery as the sole member of the Managing Board and the Company’s President and Chief Executive Officer.
The decision recognizes the importance of the continuity of ST’s strategy, execution and value proposition under Mr. Chery’s leadership.
Original – STMicroelectronics
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STMicroelectronics has released a new class of IGBTs with an increased breakdown-voltage capability of 1350V and maximum operating temperature of 175°C. The higher ratings ensure greater design margin, robust performance, and extended reliability under all operating conditions.
The new STPOWER IH2 series IGBTs also permit increased power-conversion efficiency. Favorable parameters include low saturation voltage, Vce(sat), which ensures low dissipation when the device is turned on. The freewheeling diode has low voltage drop and optimized turn-off energy that increases the efficiency of single-switch quasi-resonant converters operating at frequencies from 16kHz to 60kHz.
With their ruggedness and high efficiency, these IGBTs are ideal for induction-heating applications including domestic appliances such as kitchen hobs, inverter microwave ovens, and rice cookers. In a 2kW application, ST’s new IGBT devices can reduce power dissipation by up to 11%.
In addition, the Vce(sat) has a positive temperature coefficient and tight parameter distribution between devices helps simplify design and ease connecting multiple IGBTs in parallel to address high-power applications.
The first two devices in the series, the 25A STGWA25IH135DF2 and 35A STGWA35IH135DF2, are in production now and available in a standard TO-247 long-lead power package.
Original – STMicroelectronics
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STMicroelectronics will supply BorgWarner Inc. with the latest third generation 750V silicon carbide (SiC) power MOSFETs dice for their proprietary Viper-based power module. This power module is used in BorgWarner’s traction inverter platforms for several current and future Volvo Cars electric vehicles.
“This collaboration will give Volvo Cars the opportunity to further increase the attractiveness of our electrical vehicles with longer range and faster charging. It will also support us on our journey towards being fully electric by 2030 and strengthen our increased vertical integration and our control of critical components,” says Javier Varela, Chief Operating Officer & Deputy CEO, Volvo Cars.
“BorgWarner is pleased to partner with ST to supply our longstanding customer Volvo Cars with inverters for their next generation of BEV platforms,” says Stefan Demmerle, Vice President of BorgWarner Inc. and President and General Manager, PowerDrive Systems.
To fully leverage the performance of ST’s SiC MOSFET dice, BorgWarner collaborated closely with ST’s technical team to match their die with BorgWarner’s Viper power switch, thereby maximizing inverter performance and delivering a compact and cost-effective architecture. The collaboration between the companies provides the high-volume capability that is required by the quickly growing EV market.
“Our collaboration with BorgWarner, a leading global automotive supplier in electrification, will enable Volvo Cars to offer their customers superior vehicle performance and range,” says Marco Monti, President, Automotive and Discrete Group, STMicroelectronics. “We are committed to expanding SiC capacity and to reinforcing our SiC supply, including through vertical integration, as we ramp up volumes to support our global automotive and industrial customers in their shift to electrification and higher efficiency.”
ST’s high-volume STPOWER SiC products are manufactured in its fabs in Italy, and Singapore, with advanced packaging and testing at its back-end facilities in Morocco and China. In October 2022, ST announced it would expand its wide bandgap manufacturing capacity with a new integrated SiC substrate manufacturing facility in Catania, home to the company’s power semiconductor expertise and the site of integrated research, development, and manufacturing of SiC.
Original – STMicroelectronics
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Power semiconductors companies continue to invest heavily in new factories, production capacity expansions, and R&D centers. Thus, recently the total value of the active investment projects launched since 2021 has surpassed 70 billion USD.
Driven by the pandemic and geopolitics, major power semiconductors companies started to invest more in new factories and joint ventures to have more confidence in their own supply chain in the future.
As of today, it is obvious to see the major split of power semiconductors into three geographical regions – the USA, Europe, and Asia. Asia may as well be divided into several regions with China being the leading investor of all.
Despite the ongoing tensions and export restrictions between the US, Europe, and China related to advanced semiconductors, when it comes to power semiconductors European companies continue to invest in the Chinese market expanding their product capacity or establishing new joint ventures like STMicroelectronics and Sanan Optoelectronics did recently.
Even with some delay, Japanese companies like ROHM, Mitsubishi Electric, Fuji Electric, Renesas Electronics, Toshiba, and others, pushed by their US and European competitors, announced their own projects aimed to secure the capacity on the wafer and device level to correspond to the growing demand for Si and SiC based power semiconductors coming from the electric vehicle and charging, photovoltaics, battery energy storage systems, and the other emerging applications.
If we take a closer look at all projects announced, SiC is the leading technology with over 60% of total investment. Over 25 market leaders announced their plans to invest in silicon carbide.
Thus, ROHM is investing in new production to multiply its SiC capacity in the coming years. Mitsubishi Electric teams up with Coherent to scale manufacturing of SiC power devices on a 200 mm SiC technology platform as one of the steps of their 260 billion yen investment project planned till March 2026.
Infineon Technologies continues to bet on both local European and Asian markets investing in their new fab in Dresden and expanding backend operations in Indonesia. STMicroelectronics continues to invest in WBG semiconductors with the ongoing construction of a new wafer fab in Sicily announced in 2022.
With a global total number of new investment projects of over 80, the US companies Wolfspeed, onsemi, and Microchip Technology, similar to their European counterparts, invest locally, in Europe and Asian markets. Totally the US semiconductor companies announced new projects valued at almost 9 billion USD.
With the US and EU Chips Acts, and similar initiatives in China, Japan, South Korea, and some other countries, it is clear that the investment into power semiconductors industry will continue to reach 100 billion USD soon.
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If you haven’t had a chance to visit a wonderful Lake Maggiore yet, this September you can enjoy one of the most beautiful places in Italy in a company of power semiconductors superstars discussing SiC & GaN technologies. After a successful series of events across the world, International Semiconductor Executive Summits (ISES) returns to Italy with ISES EU Power 2023 edition.
With a regional focus on the power semiconductor market, the EU Power International Semiconductor Executive Summits seeks to strengthen the EU supply chain and promote key executives in the semiconductor manufacturing, design, and research through our networking and conference platform which consists of working with key industry stakeholders to encourage progress and collaboration.
With speakers coming from STMicroelectronics, Infineon Technologies, Semikron Danfoss, onsemi, Wolfspeed, Renesas, ROHM, Nexperia, SK Siltron, Soitec, Okmetic, Aehr Test Systems, Amkor Technology, Innoscience, Cambridge GaN Devices, Ferrari, Volkswagen, Volvo, Škoda, and many more leaders of power electronics and automotive industries, you are about to be a part of the power semiconductors event like never before.
During two days of the event, all participants will be discussing and disclosing the latest news and advances in silicon carbide and gallium nitride technologies, sharing the view of the future and taking a close look at the current state of the industry, supply chain, global collaboration, exhisting problems and emerging opportunities.
You can find the agenda of ISES EU Power 2023 at the event website.
International Semiconductor Executive Summit EU Power provides a unique platform for networking and expanding your knowledge base. Here are just a few topics that will be covered this September:
- SiC and GaN Manufacturability
- Variety of WBG Applications
- SiC Wafer & Materials
- Power Packaging
- Design and Reliability
The event offers various packages for participation:
- Standard Pass
- Member Pass
- Partner Pass
- Virtual Pass
- Numerous Sponsorship Packages and VIP Passes
All interested to participate can register at ISES EU Power 2023 website.
ISES EU Power 2023 will take place at Regina Palace Hotel. Overlooking the shore of Lago Maggiore, the Regina Palace Hotel is located in a favored spot in the center of Stresa, considered the pearl of Lago Maggiore. The hotel represents yesteryear’s charm and prestige enriched by the history and the grace that each epoch has donated.
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STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER™ GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification.
The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT™ in a PowerFLAT 5×6 HV surface-mount package. They have current ratings of 15A and 25A, respectively, with typical on-resistance (RDS(on)) of 75mΩ and 49mΩ at 25°C.
Also, 3nC and 5.4nC total gate charge and low parasitic capacitances ensure minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time.
In the coming months, ST will introduce new PowerGaN variants, i.e. automotive-qualified devices, as well as additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications.
ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the same breakdown voltage and RDS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitances, with zero reverse-recovery charge.
These properties raise efficiency and enhance switching performance, allowing higher switching frequency that permits smaller passive components thereby increasing power density. Applications can therefore become smaller with higher performance. In the future, GaN is also expected to enable new power-conversion topologies that will further improve efficiency and decrease power losses.
Original – STMicroelectronics
