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Power semiconductors companies continue to invest heavily in new factories, production capacity expansions, and R&D centers. Thus, recently the total value of the active investment projects launched since 2021 has surpassed 70 billion USD.
Driven by the pandemic and geopolitics, major power semiconductors companies started to invest more in new factories and joint ventures to have more confidence in their own supply chain in the future.
As of today, it is obvious to see the major split of power semiconductors into three geographical regions – the USA, Europe, and Asia. Asia may as well be divided into several regions with China being the leading investor of all.
Despite the ongoing tensions and export restrictions between the US, Europe, and China related to advanced semiconductors, when it comes to power semiconductors European companies continue to invest in the Chinese market expanding their product capacity or establishing new joint ventures like STMicroelectronics and Sanan Optoelectronics did recently.
Even with some delay, Japanese companies like ROHM, Mitsubishi Electric, Fuji Electric, Renesas Electronics, Toshiba, and others, pushed by their US and European competitors, announced their own projects aimed to secure the capacity on the wafer and device level to correspond to the growing demand for Si and SiC based power semiconductors coming from the electric vehicle and charging, photovoltaics, battery energy storage systems, and the other emerging applications.
If we take a closer look at all projects announced, SiC is the leading technology with over 60% of total investment. Over 25 market leaders announced their plans to invest in silicon carbide.
Thus, ROHM is investing in new production to multiply its SiC capacity in the coming years. Mitsubishi Electric teams up with Coherent to scale manufacturing of SiC power devices on a 200 mm SiC technology platform as one of the steps of their 260 billion yen investment project planned till March 2026.
Infineon Technologies continues to bet on both local European and Asian markets investing in their new fab in Dresden and expanding backend operations in Indonesia. STMicroelectronics continues to invest in WBG semiconductors with the ongoing construction of a new wafer fab in Sicily announced in 2022.
With a global total number of new investment projects of over 80, the US companies Wolfspeed, onsemi, and Microchip Technology, similar to their European counterparts, invest locally, in Europe and Asian markets. Totally the US semiconductor companies announced new projects valued at almost 9 billion USD.
With the US and EU Chips Acts, and similar initiatives in China, Japan, South Korea, and some other countries, it is clear that the investment into power semiconductors industry will continue to reach 100 billion USD soon.
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If you haven’t had a chance to visit a wonderful Lake Maggiore yet, this September you can enjoy one of the most beautiful places in Italy in a company of power semiconductors superstars discussing SiC & GaN technologies. After a successful series of events across the world, International Semiconductor Executive Summits (ISES) returns to Italy with ISES EU Power 2023 edition.
With a regional focus on the power semiconductor market, the EU Power International Semiconductor Executive Summits seeks to strengthen the EU supply chain and promote key executives in the semiconductor manufacturing, design, and research through our networking and conference platform which consists of working with key industry stakeholders to encourage progress and collaboration.
With speakers coming from STMicroelectronics, Infineon Technologies, Semikron Danfoss, onsemi, Wolfspeed, Renesas, ROHM, Nexperia, SK Siltron, Soitec, Okmetic, Aehr Test Systems, Amkor Technology, Innoscience, Cambridge GaN Devices, Ferrari, Volkswagen, Volvo, Škoda, and many more leaders of power electronics and automotive industries, you are about to be a part of the power semiconductors event like never before.
During two days of the event, all participants will be discussing and disclosing the latest news and advances in silicon carbide and gallium nitride technologies, sharing the view of the future and taking a close look at the current state of the industry, supply chain, global collaboration, exhisting problems and emerging opportunities.
You can find the agenda of ISES EU Power 2023 at the event website.
International Semiconductor Executive Summit EU Power provides a unique platform for networking and expanding your knowledge base. Here are just a few topics that will be covered this September:
- SiC and GaN Manufacturability
- Variety of WBG Applications
- SiC Wafer & Materials
- Power Packaging
- Design and Reliability
The event offers various packages for participation:
- Standard Pass
- Member Pass
- Partner Pass
- Virtual Pass
- Numerous Sponsorship Packages and VIP Passes
All interested to participate can register at ISES EU Power 2023 website.
ISES EU Power 2023 will take place at Regina Palace Hotel. Overlooking the shore of Lago Maggiore, the Regina Palace Hotel is located in a favored spot in the center of Stresa, considered the pearl of Lago Maggiore. The hotel represents yesteryear’s charm and prestige enriched by the history and the grace that each epoch has donated.
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STMicroelectronics has begun volume production of e-mode PowerGaN HEMT (high-electron-mobility transistor) devices that simplify the design of high-efficiency power-conversion systems. The STPOWER™ GaN transistors raise performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and in automotive electrification.
The first two products in the family, the SGT120R65AL and SGT65R65AL, are industrial-qualified 650V normally-off G-HEMT™ in a PowerFLAT 5×6 HV surface-mount package. They have current ratings of 15A and 25A, respectively, with typical on-resistance (RDS(on)) of 75mΩ and 49mΩ at 25°C.
Also, 3nC and 5.4nC total gate charge and low parasitic capacitances ensure minimal turn-on/turn-off energy losses. A Kelvin source connection allows optimized gate driving. In addition to the reduced size and weight of the power supplies and adapters, the two new GaN transistors provide higher efficiency, lower operating temperature, and extended life time.
In the coming months, ST will introduce new PowerGaN variants, i.e. automotive-qualified devices, as well as additional power-package options including PowerFLAT 8×8 DSC and LFPAK 12×12 for high power applications.
ST’s G-HEMT devices facilitate the transition to GaN wide-bandgap technology in power conversion. GaN transistors with the same breakdown voltage and RDS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitances, with zero reverse-recovery charge.
These properties raise efficiency and enhance switching performance, allowing higher switching frequency that permits smaller passive components thereby increasing power density. Applications can therefore become smaller with higher performance. In the future, GaN is also expected to enable new power-conversion topologies that will further improve efficiency and decrease power losses.
Original – STMicroelectronics
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STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.
The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.
With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.
Saving the need for discrete components to provide optical isolation, the STGAP2GS driver eases the adoption of efficient and robust GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.
In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimized for GaN technology, to ensure reliability and ruggedness.
Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now, priced from $1.42 for orders of 1000 pieces.
Please visit www.st.com/stgap2gs for more information.
Original – STMicroelectronics
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Airbus, a global pioneer in the aerospace industry, and STMicroelectronics, have signed an agreement to cooperate on power electronics Research & Development to support more efficient and lighter power electronics, essential for future hybrid-powered aircraft and full-electric urban air vehicles.
The collaboration builds on evaluations already conducted by both companies to explore the benefits of wide bandgap semiconductor materials for aircraft electrification. Wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) have superior electrical properties compared with traditional semiconductors like silicon. They enable the development of smaller, lighter and more efficient high-performance electronic devices and systems, particularly in applications requiring high power, high frequency, or high-temperature operations.
The cooperation will focus on developing SiC and GaN devices, packages, and modules adapted for Airbus’ aerospace applications. The companies will assess these components by conducting advanced research and tests on demonstrators, such as e-motor control units, high and low voltage power converters, and wireless power transfer systems.
Original – STMicroelectronics
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STMicroelectronics and Sanan Optoelectronics announced that they have signed an agreement to create a new 200mm silicon carbide device manufacturing JV in Chongqing, China. The new SiC fab is targeting to start production in Q4 2025 and full buildout is anticipated in 2028, supporting the rising demand in China for car electrification as well as for industrial power and energy applications. In parallel, Sanan Optoelectronics will build and operate separately a new 200mm SiC substrate manufacturing facility to fulfill the JV’s needs, using its own SiC substrate process.
The JV will make SiC devices exclusively for STMicroelectronics, using ST proprietary SiC manufacturing process technology, and serve as a dedicated foundry to ST to support the demand of its Chinese customers.
The total amount for the full buildout of the JV is expected to be about $3.2 billion, including capital expenditures of about $2.4 billion over the next 5 years, which will be financed by contributions from STMicroelectronics and Sanan Optoelectronics, local government support, and loans to the JV.
“China is moving fast towards electrification in Automotive and Industrial and this is a market where ST is already well-established with many engaged customer programs. Creating a dedicated foundry with a key local partner is the most efficient way to serve the rising demand of our Chinese customers. The combination of Sanan Optoelectronics’ future 200mm substrate manufacturing facility with the front-end JV and ST’s existing back-end facility in Shenzhen, China will enable ST to offer our Chinese customers a fully vertically integrated SiC value chain,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “It is an important step to further scale up our global SiC manufacturing operations, coming in addition to our continuing significant investments in Italy and Singapore. This JV is expected to be one of the enablers of the opportunity we see to reach $5B+ SiC revenues by 2030. This initiative is consistent with ST 2025-27 $20B+ revenue ambition and the associated financial model, previously communicated to the financial markets.”
“The establishment of this joint venture will be a major driving force for the wide adoption of SiC devices on the Chinese market,” said Simon Lin, CEO of Sanan Optoelectronics. “Being an international, well-known, high quality SiC foundry service company, Sanan will also supply its SiC substrate to this new joint venture, by building a dedicated new SiC substrate factory. This is an important step for Sanan Optoelectronics’ ambitions as a SiC foundry. With this new Joint Venture and the new SiC substrate capacity expansion, we are confident that we will continue to take the lead in the SiC foundry market.” The completion of the project is subject to regulatory approvals.
Original – STMicroelectronics
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GlobalFoundries Inc. and STMicroelectronics announced the conclusion of the agreement to create a new, jointly-operated, high-volume semiconductor manufacturing facility in Crolles (France), which was announced on 11 July 2022.
“I would like to thank Minister Le Maire, the French Minister of the Economy and Finance, and his team for their support and the dedication for the last 12+ months that have made celebrating today’s milestone possible,” said Dr. Thomas Caulfield, president and CEO of GlobalFoundries. “In partnership with ST in Crolles, we are further expanding GF’s presence within Europe’s dynamic technology ecosystem while benefiting from economies of scale to deliver additional capacity in a highly capital efficient manner. Together we will deliver GF’s market leading FDX technology and ST’s comprehensive technology roadmap, in alignment with customer demand which is expected to remain high for Automotive, IoT, and Mobile applications over the next decades.”
“Today marks an important milestone for ST, for GF as well as for Europe. This could not have been achieved without the support of the French government as well as of the European Commission,” said Jean-Marc Chery, President and CEO of STMicroelectronics. “We will further reinforce the European and French FD-SOI ecosystem, building more capacity for our European and global customers in complex, advanced technologies for key end-markets including automotive, industrial, IoT and communication infrastructure, as they transition to digitalization and decarbonization. This new manufacturing facility will support our $20 billion+ revenue ambition.”
The program represents an overall projected cost of 7.5 billion euro for CAPEX, maintenance and ancillary costs. The new facility will benefit from significant financial support from the State of France (administered by Bpifrance). The aid measure, in line with the objectives set out in the European Chips Act and part of the “France 2030” plan, recently received approval from the European Commission.
Original – GlobalFoundries
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The technology group ZF will, from 2025, purchase silicon carbide devices from STMicroelectronics. Under the terms of the multi-year contract, ST will supply a volume of double-digit millions of silicon carbide devices to be integrated in ZF’s new modular inverter architecture going into series production in 2025. ZF will leverage ST’s vertically integrated silicon carbide manufacturing in Europe and Asia to secure customer orders in electromobility.
“With this strategically important step, we are strengthening our supply chain to be able to securely supply our customers. Our order book in electromobility until 2030 now amounts to more than thirty billion euros. For this volume, we need several reliable suppliers for silicon carbide devices,” says Stephan von Schuckmann, member of the ZF Board of Management responsible for electromobility as well as materials management. “In STMicroelectronics, we now have a supplier whose experience with complex systems meets our requirements and who, above all, can produce the devices in exceptionally high quality and at the required quantities.” With this agreement, ZF has gained a world-class supplier for silicon carbide technology, in addition to ZF’s existing partnership agreement on silicon carbide technology announced in February.
“As a vertically integrated company, we are investing heavily to expand capacity and develop our silicon carbide supply chain to support our global and European customers across automotive and industrial sectors, as they pursue electrification and decarbonization targets,” says Marco Monti, President Automotive and Discrete Group of STMicroelectronics. “The key to success in electric vehicle technology is greater scalability and modularity with increased efficiency, peak power, and affordability. Our silicon carbide technologies help deliver these benefits and we are proud to work with ZF, a leading automotive supplier for electrification, to help them differentiate and optimize the performance of their inverters.”
ST will manufacture the silicon carbide chips at its production fabs in Italy and Singapore with packaging of the chips into STPAK, an ST-developed advanced package, and testing at its back-end facilities in Morocco and China.
ST will supply ZF from 2025 with a volume of double-digit millions of third generation silicon carbide MOSFET devices. ZF can connect a variable number of such devices together to match customers’ performance requirements without changing the design of the inverter. Among others, ZF will use the technology in inverters for vehicles of a European car manufacturer whose production start is planned for 2025.
The inverter is the brain of electric drivetrains. It manages the flow of energy from battery to e-motor and vice versa. Inverters have become more efficient and more complex with every development step. The combination of the inverter design and the semiconductors, like silicon carbide, is the key to improving electric vehicle performance. Silicon carbide devices significantly reduce power losses in electric car inverters, as well as in wind turbine and photovoltaic inverters. Devices made with silicon carbide have decisive advantages over conventional silicon-based products, such as higher efficiency, power density and reliability. At the same time, they enable smaller and more cost-effective system designs. Simply put, an electric vehicle charges faster, drives further and has more space when equipped with silicon carbide-based semiconductors.
Original – STMicroelectronics
