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Toshiba Electronic Devices & Storage Corporation has expanded its lineup of 600V N-channel power MOSFETs “DTMOSVI series” fabricated with Toshiba’s latest-generation process, with a super junction structure. These new products are suitable for high efficiency switching power supplies used for data centers and power conditioners of photovoltaic generators. Nine products of “TK40N60Z1, TK080N60Z1, TK080A60Z1, TK085V60Z1, TK125N60Z1, TK125A60Z1, TK130V60Z1, TK155A60Z1 and TK165V60Z1” have been added to the lineup in terms of packages and drain-source On-resistance.
By optimizing the gate design and process, 600V DTMOSVI series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This means new products have a better trade-off between conduction loss and switching loss than current products. New products of DTMOSVI series will contribute improving efficiency of power supplies.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba will continue to expand its DTMOSVI series lineup, and support energy conservation by reducing power loss in switching power supplies.
Original – Toshiba
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According to a survey by Global Market Insights, Super Junction MOSFETs captured over 30% market share in the energy and power sector in 2023. Their applications span multiple domains, including electric vehicle charging stations, server and data center power supplies, LED drivers, solar inverters and home appliance controls.
The global Super Junction MOSFET market is projected to achieve a compound annual growth rate (CAGR) exceeding 11.5% by 2032. Super Junction MOSFETs offers robust assurance to customers seeking exceptional performance and stability backed by WeEn’s well-established reliability standards, comprehensive supply chain systems and continuously evolving technological roadmaps.
WeEn currently offers two series of Super Junction MOSFETs: G1 and G2. G2 Super Junction MOSFETs feature advanced design improvements, such as reduced cell pitch, low-resistance epitaxial layers, and shorter P-column depths. These innovations significantly reduce the device’s on-state resistance.
Simultaneously, WeEn precisely controlled the charge balance of the super junction structure, ensuring excellent avalanche ruggedness and low capacitive losses. This results in a balanced, outstanding performance in both hard and soft-switching applications that demand high efficiency, reliability, and superior thermal management.
The WSJ2M60R065D is one of the flagship products in WeEn’s G2 Super Junction MOSFET lineup. Available in various packages including TO-220, TO-220F, TO-247, and TOLL. It particularly excels in terms of on-state resistance. Compared to competitors’ products, the WSJ2M60R065D maintains more stable on-state resistance across different current densities. Within its maximum continuous current range, the resistance variation does not exceed 10%. This stability provides customers with reliable performance data. Furthermore, the WSJ2M60R065D adapts well to applications with varying power requirements, demonstrating exceptional performance across diverse and complex operating environments.
WeEn’s G2 MOSFETs are at the forefront of performance, with their Figure of Merit (FOM) on par with top global competitors. While ensuring stringent yield and process control, WeEn reserves more breakdown voltage margin for customers. 600V devices approach the standards of 650V devices available on the market, thoroughly safeguarding the reliability of customer applications. Moreover, the G2 MOSFET integrates a finely tuned fast recovery body diode, with a reverse recovery time (Trr) of only 123 ns. The body diode can withstand a commutation speed of 1000 A/μs without damage. This makes the WSJ2M60R065D particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies, delivering high efficiency while handling irregular operating conditions.
However, the WSJ2M60R065D is not limited to soft-switching applications. It also demonstrates excellent performance in hard-switching applications. The WSJ2M60R065D offers significant advantages in terms of lower capacitive losses (Eoss) compared to top competitors. Additionally, its normalized ruggedness is significantly higher than the industry standard, enabling it to withstand higher overvoltage and oscillation. It also demonstrates stable and safe performance in hard-switching topologies such as Power Factor Correction (PFC) circuits.
WeEn consistently adheres to rigorous and reliable quality assessment practices. In accelerated aging tests, the company maintains a zero-tolerance policy for product failures. WeEn MOSFET products demonstrate excellent consistency in performance during high-temperature stress aging tests at 168, 500, and 1000 hours. Furthermore, WeEn conducts additional reviews of the ESD (Electrostatic Discharge) capability of the device to minimize quality issues during production, packaging, and transportation. The WSJ2M60R065D demonstrates a robust quality level with a CDM (Charged Device Model) capability exceeding 2000V and an HBM (Human Body Model) capability of over 4000V.
Original – WeEn Semiconductors
