Taiwan Semiconductor Tag Archive

  • Taiwan Semiconductor Announced a Family of 650V SiC SBDs

    Taiwan Semiconductor Announced a Family of 650V SiC SBDs

    1 Min Read

    Taiwan Semiconductor – a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices – announced a family of 650V silicon carbide Schottky barrier diodes which are suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications.

    Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

    Key Features

    • Max. junction temperature 175°C
    • High-speed switching
    • High frequency operation
    • Positive temperature coefficient on VF
    • SPICE Models available
    • Thermal Models available

    Applications

    • AD-DC conversion – PFC Boost
    • DC-DC, Solar inverters
    • Data center and server power
    • Telecom – Datacom power
    • UPS systems

    Circuit Functions

    • PFC boost diode
    • Free-wheeling diode
    • Full wave bridge
    • Vienna bridgeless circuit

    Original – Taiwan Semiconductor

    Comments Off on Taiwan Semiconductor Announced a Family of 650V SiC SBDs