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Toshiba Electronic Devices & Storage Corporation announced that it has started construction of a back-end production facility for power semiconductors at Himeji Operations – Semiconductor, in Hyogo Prefecture, western Japan. The new facility will start mass production in spring 2025.
Toshiba will promote smart factory initiatives that bring automated transportation systems into manufacturing processes, promote work efficiency through adoption of RFIDNote tags, and improve the accuracy of inventory management. The facility will be 100% powered by renewable energy and equipped with solar power generation systems, underlining Toshiba’s commitment to the SDGs.
Power devices are essential components for managing and reducing power consumption in all kinds of electronic equipment, and for saving energy. With the start of production at the new Himeji facility, Toshiba will more than double its production capacity for automotive power semiconductor production, against fiscal 2022, and reinforce its contributions to advancing carbon neutrality.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, including data centers and photovoltaic power conditioners, to its latest-generation DTMOSVI series with a super junction structure. Shipments of the first two products “TK042N65Z5” and “TK095N65Z5,” 650V N-channel power MOSFETs in TO-247 packages, start today.
The new products use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against the standard DTMOSVI, they achieve a 65% reduction in reverse recovery time (trr), and an 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt= 100A/μs).
The DTMOSVI(HSD) process used in the new products improves on the reverse recovery characteristics of Toshiba’s DTMOSIV series with high-speed diodes (DTMOSIV(HSD)), and has a lower drain cut-off current at high temperatures. The figure of merit “drain-source On-resistance × gate-drain charges” is also lower. The high temperature drain cut-off current of TK042N65Z5 is approximately 90% lower, and the drain-source On-resistance × gate-drain charge 72% lower, than in Toshiba’s current TK62N60W5.
This advance will cut equipment power loss and help to improve efficiency. The TK042N65Z5 shows a maximum improvement in power supply efficiency over the current TK62N60W5 of about 0.4%, as measured in a 1.5kW LLC circuit.
A reference design, “1.6 kW Server Power Supply (Upgraded)”, that uses TK095N65Z5 is available on Toshiba’s website today. The company also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba plans to expand the DTMOSVI(HSD) line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.
The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650V and 600V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST3000GXH35A” with ratings of 4500 V/3000 A for use in high-voltage converters.
The new product ST3000GXH35A has optimized N buffer layer design, thereby reducing approximately 400 V of turn-off-voltage oscillation peak-value (Vcp) at low current, compared with the Toshiba’s existing product. This helps simplify the snubber circuit.
In addition, the measuring voltage of short-circuit pulse-width has been enhanced to 3400 V in response to applications requiring high voltage. This allows facilitating the short-circuit protection design of converters.
Applications
- DC power transmission
- Static VAR compensator
- Industrial motor controller
Features
- Maximum junction temperature rating: Tj (max)=150 °C
- Approximately 400 V reduction in turn-off voltage oscillation peak-value (Vcp) at low current
- Enhanced 3400 V of short-circuit pulse-width
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation will move its semiconductor business unit and its research and development (R&D) center to a new building in Toshiba Corp’s Komukai Complex in Kawasaki. It will also be home to Toshiba’s Corporate R&D Center, strengthening synergy within Toshiba Group’s R&D organizations.
The new building will provide spaces for exhibitions and other events open to people from outside the company, as well as collaboration spaces for co-creation with customers. It will create an environment customers can feel free to visit, and promote new ways of working unconstrained by typical workplace limitations.
Virtually all energy will be derived from renewable, and CO2 emissions from power consumption will target zero, contributing to the realization of carbon neutrality.
Division names: Semiconductor Division and Electronic Devices & Storage R&D Center
Address: 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, Kanagawa 212-8583, Japan
Phone number: +81-44-548-2000 (switchboard; no change)
Relocation date: January 22, 2024The address of the Storage Products Division and the company’s registered address remain unchanged, as below.
Storage Products Division
8, Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, JapanRegistered headquarters
1-1, Shibaura 1-Chome, Minato-ku, Tokyo, JapanOriginal – Toshiba
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Toshiba Electronic Devices & Storage Corporation announced new board of directors, with an effective date of December 22, 2023.
The composition of the Board of Directors and the company’s Auditors, as of December 22, 2023, will be as follows:
Directors and Officers of the Company
Director, President & CEO Taro Shimada (Toshiba Corporation)
Director, Vice President Noriyasu Kurihara
Director Seiichi Mori
Director Norifumi Inukubo (Toshiba Corporation)
Director Hiroshi Kuriki (Toshiba Corporation)
Director Shin Kurosawa
Director Hiroyuki Shinki (Toshiba Corporation)
Director Yutaka Sata (Toshiba Corporation)
Auditor Hiroki Okada
Auditor Masami Takaoka
Auditor Akira Nakanishi (Toshiba Corporation)Retiring Director as of December 22, 2023
Hiroyuki SatoOriginal – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched two bipolar transistors “TTA2097 and TTC5886A” (with SC-63 package: Toshiba’s nickname is New PW-Mold), suitable for gate drive circuits in power devices, current switches in consumer equipment and industrial equipment, and LED drive circuits. The collector-emitter voltage rating and collector current (DC) rating of TTA2097 is -50 V/-5 A and that of TTC5886A is 50 V/5 A.
The new products TTA2097 and TTC5886A use small surface-mount type SC-63 package. Compared with Toshiba’s existing products with the same package, the new products have changed the wire material from gold to copper while the ratings and electrical characteristics are equivalent. This contributes to the reduction of environmental impacts. It is also easy to replace Toshiba’s existing products.
Toshiba will continue to expand its lineup of products that help reduce environmental impact.
Applications
Consumer equipment and industrial equipment
- Gate drive circuits for power devices
- Current switches
- LED drive circuits, etc.
Features
- Use of copper wire materials to reduce environmental impact
- Large collector current (DC) rating:
IC=-5 A (TTA2097)
IC=5 A (TTC5886A) - Small surface-mount type SC-63 package:
6.5 mm × 9.5 mm (typ.), t=2.3 ｍｍ (typ.)
Original – Toshiba
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A plan by ROHM Co., Ltd. and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply.
ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party’s production capacity.
Power devices are essential components for supplying and managing power supply in all kinds of electronic equipment, and for achieving a carbon-free, carbon-neutral society. Current demand is expected to see continued growth.
In automotive applications, development of more efficient, smaller and lighter electric powertrains has advanced alongside the rapid expansion in vehicle electrification. In industrial applications, stable supply of power devices and improved characteristics are widely required to support increasing automation and higher efficiency requirements.
Against this backdrop, ROHM has formulated a management vision, “We focus on power and analog solutions and solve social problems by contributing to our customers’ needs for energy savings and miniaturization of their products.,” and accelerates its efforts for a carbon-free. SiC power devices are the keys to energy savings.
Since the world’s first mass production of SiC MOSFETs, ROHM has been constantly developing industry-leading technologies. Among these are ROHM’s latest 4th Generation SiC MOSFETs that will be adopted for numerous electric vehicles and industrial equipment. As one of its priority projects, ROHM is working on SiC business, which contains aggressive and continuous investment to increase the production capacity of SiC and meet strong demand growth.
Toshiba Group, with its long-standing Basic Commitment, “Committed to People, Committed to the Future.,” aims to advance the achievement of carbon neutrality and a circular economy. Toshiba Electronic Devices & Storage has for decades supplied Si power devices, mainly for automotive and industrial markets, that have helped to secure energy saving solutions and equipment miniaturization.
The company started production on a 300mm wafer line last year, and is accelerating investment to enhance production capacity and meet strong demand growth. It is also advancing development of a wider lineup of SiC power devices, especially for automotive and power transmission and distribution applications, taking full advantage of the expertise it has cultivated in railway vehicle applications.
ROHM has already announced its participation in the privatization of Toshiba, but this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time, and that resulted in the joint application.
ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies’ international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched chopper SiC MOSFET modules “MG800FXF1ZMS3” and ”MG800FZF1JMS3” with ratings of 3300 V and 800 A using 3rd generation silicon carbide (SiC) MOSFET and SBD chips for industrial equipment and has expanded its lineup.
The new products MG800FXF1ZMS3 and MG800FXF1JMS3 adopt an iXPLV package with Ag sintering internal bonding technology and high compatibility with mounting. These offers low conduction loss with low drain-source on-voltage (sense) of 1.3 V (typ.), and also offers low switching loss with low turn-on switching loss of 230 mJ (typ.) and low turn-off switching loss of 230 mJ (typ.). These contribute to reducing the power loss of equipment and the size of cooling device.
The lineup of Toshiba’s MOSFET modules of iXPLV package has three products, including existing product MG800FXF2YMS3 (3300 V / 800 A / Dual SiC MOSFET module.) This provides a wide range of product selection. This can be used in 2-level inverters, buck/boost converters and 3-level inverters.
Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.
Applications
Industrial equipment
- Inverters and converters for railway vehicles
- Renewable energy power generation systems
- Motor control equipment for industrial equipment, etc.
Features
- Low drain-source on-voltage (sense):
VDS(on)sense=1.3 V (typ.) (ID=800 A, VGS=+20 V, Tch=25 °C) - Low turn-on switching loss:
Eon=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C) - Low turn-off switching loss:
Eoff=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C)
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation has launched the product “HN1D05FE”, a 400 V voltage switching diode. The new product “HN1D05FE” is suitable for applications that require high voltage characteristics such as commercial AC power supply circuits and AC-DC converter circuits for LED illumination. With a 400 V reverse voltage rating, HN1D05FE is suitable for power supply circuits below 200 V, as well as reverse-current protection and surge protection, and more.
In addition, the new product is housed in a SOT-563 package (Toshiba package name: ES6, 1.6 mm × 1.6 mm (typ.), t=0.55 mm (typ.)) to achieve high voltage characteristics in a small size.
Furthermore, built-in two switching diodes allow reducing the number of devices in circuits which use multiple devices.Moreover, the package size is reduced by approximately 70 % and the package height is as low as 50 % compared with the SOT-24 package (Toshiba package name: SMQ, 2.9 mm × 2.9 mm (typ.), t=1.1 mm (typ.)) of Toshiba’s existing product 1SS399. This helps to downsizing and thinning of the set.
Applications
- Consumer equipment (home appliances, OA equipment, PC, etc.)
- Industrial equipment (FA equipment, PV, semiconductor-manufacturing equipment, etc.)
Features
- High reverse voltage : VR = 400 V
- Low leakage current : IR = 0.1 μA (max) (VR = 400 V)
- Small and thin SOT-563 Package : Toshiba Package Name : ES6 (1.6 mm × 1.6 mm (typ.), t = 0.55 mm (typ.))
Original – Toshiba
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Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two products of 600V small intelligent power device (IPD) for brushless DC motor drive applications such as air conditioners, air cleaners, and pumps. Volume shipments of “TPD4163K” and “TPD4164K,” which have output current (DC) ratings of 1A and 2A, respectively, start today.
Both new products are housed in a through hole type HDIP30 package, which reduces the mounting area by approximately 21% against Toshiba’s previous products. This helps reduce the size of motor drive circuit boards.
As power supply voltage may fluctuate significantly in regions with unstable power supply, the voltage has been increased from the 500V of Toshiba’s previous products[1] to 600V, which improves reliability.
A “Reference Design for Sensorless Brushless DC Motor Drive Circuit” that utilizes the functions of the new TPD4164K with a TMPM374FWUG microcontroller with vector control engine is available from today on Toshiba’s website.
Toshiba will continue to expand its product line-up with improved characteristics, to improve design flexibility, and to contribute to carbon neutrality through energy-saving motor control.
Applications
Brushless DC motors in home appliances
- Fan motors (air conditioner, air cleaner, ventilation fan, ceiling fan, etc.)
- Pumps
Features
- High power supply voltage rating to secure operation margin for power supply voltage fluctuations: VBB=600V
- Small package
Through hole type HDIP30: 32.8mm×13.5mm (typ.), t=3.525mm (typ.)
Original – Toshiba
