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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
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Vishay Intertechnology, Inc. announced that at electronica 2024, the company will be exhibiting its broad portfolio of passive and semiconductor solutions, and discussing their pivotal role in shaping a sustainable future through the all-electric society. Vishay experts will be on hand to dive into cutting-edge developments in automation, AI, e-mobility, and smart and alternative energy technologies.
In hall C4, booth 478, Vishay will be showcasing its differentiated products and solutions in a range of applications and use cases, including AI, alternative energy, energy storage systems (ESS), ADAS, e-mobility and urban mobility, EV charging infrastructure, HMI, HVAC, grid management, and building automation. In reference designs on display, Vishay’s components — including the company’s latest silicon carbide (SiC) MOSFETs, diodes, and power modules — make up to 70 % or more of the BOMs. Among the highlights taking center stage at Vishay’s booth will be:
AI
- A multi-phase power board for SoCs used in AI applications featuring 100 A smart power stages, ultra low DCR, vertical-mount IHVR inductors, and polymer tantalum capacitors
Alternative Energy
- An auxiliary power system for solar inverters, featuring 1200 V MaxSiC™ series SiC MOSFETs and FRED Pt® hyperfast rectifiers for the conversion of 100 V to 700 V inputs down to 24 V
- A bidirectional 230 V AC / 1500 V DC multi-waveform direct inverter with battery storage, featuring surface-mount MOSFETs with low on-resistance and NTC thermistors
- A 10 kW hybrid solar inverter with MPPT, featuring 1200 V, 15 A SiC diodes
e-Mobility
- An intelligent battery shunt built on WSBE Power Metal Strip® resistors, with low TCR and a CAN FD interface for 400 V / 800 V systems
- A 22 kW bidirectional 800 V to 800 V power converter for OBCs featuring SiC power modules
- A 4 kW bidirectional 800 V to 48 V power converter for auxiliary power featuring Si and SiC MOSFETs
- Active discharge circuits with wirewound safety resistors and MOSFET drivers for 400 V / 800 V DC-Link capacitors
ADAS
- A DMS / CMS system in which IR LEDs shut off when a user comes too close, featuring high accuracy ambient lights sensors with I²C interfaces; reflective optical sensors with transistor output; and fully integrated proximity and ambient lights sensors with infrared emitters, I²C interfaces, and interrupt functions
ESS
- Isolated busbar current sensors with analog output in which an isolation amplifier transmits voltage signals from a WSBE shunt and WSL2726 resistor
HMI and EMI Suppression
- An HMI featuring IHPT series haptic feedback actuators with Immersion Corporation licenses
- A multi-axis robot capturing and displaying the EMI performance of IHLE® inductors and competing devices running side by side
Grid Management and Power Conversion
- A smart meter and gateway for the real-time monitoring of energy consumption and generation in the home
- A bidirectional 72 V / 12 V DC/DC converter with Transzorb® TVS for telecom power supplies
Additional reference designs and demonstrations being offered by Vishay at electronica 2024 will include isolated AC/DC voltage sensors for high voltage networks; a BMS optical communication system; a compact 800 V power distribution solution; a 48 V, 15 kW traction inverter; a 48 V, 3 kW on-board charger; a 30 kW fast charger; a BLDC motor control board for heat pumps; a smart smoke, CO, and heat detector with supercapacitor backup; a photovoltaic energy harvester featuring ENYCAP® capacitors; a dual-side cooled, low voltage BLDC motor controller with high thermal efficiency, as well as designs featuring inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm.
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Vishay Intertechnology, Inc. announced results for the fiscal third quarter ended September 28, 2024.
Highlights
- 3Q 2024 revenues of $735.4 million
- Gross margin was 20.5% and included the negative impact of approximately 150 basis points related to the addition of Newport
- GAAP loss per share of ($0.14); adjusted EPS of $0.08 per share
- 3Q 2024 book-to-bill of 0.88 with book-to-bill of 0.79 for semiconductors and 0.97 for passive components
- Backlog at quarter end was 4.4 months
“For the third consecutive quarter this year, revenue has held fairly constant, reflecting a prolonged period of inventory de-stocking as the pace of consumption by industrial customers remains slow, backlogs are pushed out and macroeconomic conditions in Europe worsen,” said Joel Smejkal, President and CEO. “While the industry remains in a downcycle, we are making the necessary adjustments to manage costs while continuing to execute our five-year strategic plan. We are preparing to participate fully in the next industry up-cycle and we are putting the foundation in place to capitalize on the longer term demand catalysts of e-mobility and sustainability to drive faster revenue growth, and improve profitability and returns on invested capital.”
For the fourth quarter of 2024, management expects revenues in the range of $720 million +/- $20 million, with gross profit margin in the range of 20.0% +/- 50 basis points, including the negative impact of approximately 175 to 200 basis points from the addition of Newport.
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Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum.
Consisting of an AlGaAs LED optically coupled to an integrated circuit with a power output stage, the optocouplers are intended for solar inverters and microinverters; AC and brushless DC industrial motor control inverters; and inverter stages for AC/DC conversion in UPS. The devices are ideally suited for directly driving IGBTs with ratings up to 1200 V / 100 A.
The high operating temperature of the VOFD341A and VOFD343A provides a higher temperature safety margin for more compact designs, while their high peak output current allows for faster switching by eliminating the need for an additional driver stage. The devices’ low propagation delay minimizes switching losses, while facilitating more precise PWM regulation.
The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages, while still maintaining enough voltage safety margin. The RoHS-compliant devices offer high noise immunity of 50 kV/µs, which prevents fail functions in fast switching power stages.
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Vishay Intertechnology, Inc. announced that it is implementing restructuring actions designed to optimize the Company’s manufacturing footprint and streamline business decision making as it executes its Vishay 3.0 growth strategy.
The restructuring actions will be implemented in phases and include:
- Selling, general, and administrative functions will be streamlined beginning immediately and through 4Q 2025, resulting in severance payments to approximately 170 employees, or 6% of the SG&A workforce.
- The closure of three manufacturing facilities. A Diodes segment back-end facility in Shanghai, China is expected to be closed by the end of 2026 with production transfers completed in phases beginning 4Q 2025. In addition, two small facilities in the Resistors segment in Fichtelberg, Germany, and in Milwaukee, Wisconsin, are expected to be closed in 2026. As a result of these facility closures, Vishay will reduce its direct labor by approximately 365 employees, or 2% of its total manufacturing labor workforce.
- Various changes in manufacturing operations and production transfers, which will result in severance payments to approximately 260 employees.
The Company expects to incur pre-tax cash charges of approximately $38 to $42 million, primarily related to severance costs, as a result of these programs, mostly in 3Q 2024. Once the program is fully implemented by the end of 2026, Vishay expects to realize annualized cost savings of at least $23 million of which approximately $12 million is expected to be in selling, general and administration expenses. The Company expects to realize immediate annualized cost savings of approximately $9 million. Beginning 1Q 2025, the Company expects to realize approximately $12 million in annualized cost savings.
“As we implement Vishay 3.0, reshaping the Company and preparing for our next phase of growth, we continuously task ourselves with identifying opportunities to best foster a business minded approach to decision making, further enhance our customer first focus and improve cost efficiencies,” said Joel Smejkal, Vishay’s President and Chief Executive Officer.
“With that in mind, we are undertaking these restructuring actions in part to eliminate barriers to execution and to intensify the sense of urgency. We’re also taking our first step to optimize our global manufacturing footprint, closing smaller single product line facilities and moving toward campus manufacturing structures with multiple product lines. Collectively, these actions will help us execute our five-year growth strategy to accelerate our revenue growth rate, expand profitability and drive higher returns.”
The Company’s estimates of the costs related to its cost reduction programs and anticipated annual savings represent its current best estimates. However, such estimates are preliminary and subject to change as the Company implements these programs.
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Vishay Intertechnology, Inc. announced results for the fiscal second quarter ended June 29, 2024.
Highlights
- 2Q 2024 revenues of $741.2 million
- Gross margin was 22.0% and included the negative impact of approximately 170 basis points related to the addition of Newport
- EPS of $0.17
- 2Q 2024 book-to-bill of 0.86 with book-to-bill of 0.82 for semiconductors and 0.90 for passive components
- Backlog at quarter end was 4.6 months
“During the second quarter, we executed well on our Vishay 3.0 strategic plan, deepening our customer engagements supported by capacity that has landed and that we will continue to expand, and advancing our silicon carbide strategy as we prepare for the megatrends in sustainability and e-mobility,” said Joel Smejkal, President and CEO.
“Revenue, including a full quarter of Newport, was flat quarter over quarter, primarily reflecting schedule agreement adjustments by automotive Tier 1 customers. At mid-year 2024, it is apparent that the industry recovery is taking longer than we had expected at the beginning of the year. As a result, we are adjusting the timetable of the Itzehoe, Germany expansion project beyond 2024 while holding to our planned capital investment of $2.6 billion between 2023 and 2028. For 2024, we now plan to invest between $360 million to $390 million in capex.”
3Q 2024 Outlook
For the third quarter of 2024, management expects revenues in the range of $745 million +/- $20 million, with gross profit margin in the range of 21.0% +/- 50 basis points, including the negative impact of approximately 175 to 200 basis points from the addition of Newport.Original – Vishay Intertechnology
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Vishay Intertechnology, Inc. introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.
The next-generation SiC diodes released today consist of 5 A to 40 A devices in the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D2PAK 2L (TO-263AB 2L) surface-mount packages. The diodes offer a low capacitance charge down to 28 nC, while their MPS structure — which features a backside thinned via laser annealing technology — delivers a reduced forward voltage drop of 1.35 V. In addition, the devices’ low typical reverse leakage current down to 2.5 µA at 25 °C reduces conduction losses, ensuring high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.
Typical applications for the diodes will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and datacenters. For the harsh environments of these applications, the devices combine operating temperatures to +175 °C with forward surge ratings to 260 A for high robustness. In addition, diodes in the D2PAK 2L package feature a molding compound with a high CTI ≥ 600, ensuring excellent electrical insultation at elevated voltages.
Offering high reliability, the RoHS-compliant and halogen-free devices have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.
Device Specification Table:
Part # IF(AV) (A) IFSM (A) VF at IF (V) QC (nC) Configuration Package VS-3C05ET12T-M3 5 42 1.35 28 Single TO-220AC 2L VS-3C10ET12T-M3 10 84 1.35 55 Single TO-220AC 2L VS-3C15ET12T-M3 15 110 1.35 81 Single TO-220AC 2L VS-3C20ET12T-M3 20 180 1.35 107 Single TO-220AC 2L VS-3C05ET12S2L-M3 5 42 1.35 28 Single D2PAK 2L VS-3C10ET12S2L-M3 10 84 1.35 55 Single D2PAK 2L VS-3C15ET12S2L-M3 15 110 1.35 81 Single D2PAK 2L VS-3C20ET12S2L-M3 20 180 1.35 107 Single D2PAK 2L VS-3C10EP12L-M3 10 84 1.35 55 Single TO-247AD 2L VS-3C15EP12L-M3 15 110 1.35 81 Single TO-247AD 2L VS-3C20EP12L-M3 20 180 1.35 107 Single TO-247AD 2L VS-3C30EP12L-M3 30 260 1.35 182 Single TO-247AD 2L VS-3C10CP12L-M3 2 x 5 42 1.35 28 Common cathode TO-247AD 3L VS-3C20CP12L-M3 2 x 10 84 1.35 55 Common cathode TO-247AD 3L VS-3C30CP12L-M3 2 x 15 110 1.35 81 Common cathode TO-247AD 3L VS-3C40CP12L-M3 2 x 20 180 1.35 107 Common cathode TO-247AD 3L Samples and production quantities of the new SiC diodes are available now, with lead times of 13 weeks.
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Vishay Intertechnology, Inc. announced that at PCIM Europe 2024 the company will be showcasing its broad portfolio of power management solutions that address several increasingly important trends in power electronics, including e-mobility, high efficiency power conversion, energy storage, and grid management. In Hall 9, Booth 208, Vishay experts will be available to discuss the company’s extensive offering of passive and semiconductor solutions for these next-generation applications.
Taking center stage for Vishay at PCIM will be the company’s newly released 1200 V MaxSiC™ series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 55 mW, 95 mW, and 280 mΩ in standard packages for industrial applications, with custom products also available.
In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 1 Ω. Vishay’s SiC platform is based on proprietary MOSFET technology — enabled through the company’s acquisition of MaxPower Semiconductor, Inc. — which will address market demands in traction inverter, photovoltaic energy conversion and storage, on-board charger, and charging station applications. At the booth, Vishay’s experts will also be discussing upcoming planned releases of the MaxSiC platform, including AEC-Q101 Automotive Grade products.
At PCIM, Vishay will be offering a variety of application-focused demonstrations, including:
- A high voltage intelligent battery shunt for 400 V and 800 V batteries
- A 40 kW resettable electronic fuse (eFuse) for 400 V and 800 V battery electric vehicles (BEV)
- A unidirectional, 11 kW three-phase AC on-board charger (OBC) with a BOM consisting of 90 % Vishay parts
- A bidirectional 10 kW eFuse for 48 V applicationsA collaborative robot workstation featuring Vishay power resistors, ESTA power electronic capacitors (PEC), Automotive Grade diodes, SiC MOSFETs, and an SiC-based auxiliary power converter.
Vishay passive components on display at PCIM will include IHPT series solenoid-based haptic actuators featuring Immersion Corporation licenses, a 5.5 kW transformer / inductor for LLC applications, and IHLE® series low profile, high current inductors with integrated e-field shields; wirewound resistors and charging resistors featuring hybrid wirewound technology; thick film power resistors; robust metallized polypropylene film capacitors, including AC and pulse capacitors and DC-Link capacitors with high temperature operation up to +125 °C and the ability to withstand temperature humidity bias (THB) testing of 85 °C / 85 % for 1000 h; X1, X2, and Y2 EMI suppression film capacitors certified to safety and humidity robustness grade IIIB; and DC and AC power electronic capacitors (PEC) with high impulse current ratings, low inductance, and high reliability.
Highlighted Vishay semiconductor solutions will consist of surface-mount diodes in the eSMP® and FlatPAK 5×6 packages; leadless surface-mount diodes in the DFN, CLP, and LLP series packages; and 650 V and 1200 V SiC Schottky diodes up to 20 A in eSMP® series and 40 A in power packages for AC/DC power factor correction (PFC) and ultra high frequency output rectification. In addition, Vishay will be showcasing microBUCK® and microBRICK® buck regulators, including the 60 V input SiC967 synchronous buck regulator with integrated power MOSFETs and inductors; high voltage MOSFETs in the PowerPAK 10×12 package; automotive power modules in the EMIPAK 1B, MaacPAK, FlatPAK, and HC0 packages; and industrial power modules in Gen III TO-244, IAP, SOT-227, and MTC packages.
Prior to the exhibition, on June 9, Vishay’s Sanjay Havanur — senior manager of system applications — will be presenting the seminar “Silicon Is Still Here: A Refresher on the Narrow Bandgap Power MOSFETs and Their Datasheets” at 2 p.m. in the Arvena Park Hotel. During the show, Claudio Damilano — director of product marketing and market development, power modules — will present “Evolution in Vishay Power Modules for E-Mobility: Solutions for High Voltage and Low Voltage Applications” on June 11, at 3:50 p.m. in Hall 6, Booth 220.
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK® 8 x 8LR package.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 % while providing higher current in a smaller footprint than devices in the D²PAK package.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, super computers, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR package features a 50.8 % smaller footprint than the D²PAK while offering a 66 % lower height. Due to its top-side cooling, the package delivers excellent thermal capability, with an extremely low junction to case (drain) thermal resistance of 0.25 °C/W.
This allows for 46 % higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the package’s gullwing leads provide excellent temperature cycle capability.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHR080N60E features low typical on-resistance of 0.074 Ω at 10 V and ultra low gate charge down to 42 nC. The resulting FOM is an industry-low 3.1 Ω*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems > 2 kW.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The package also provides a Kelvin connection for improved switching efficiency.
The device is RoHS-compliant and halogen-free, and it is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
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Vishay Intertechnology, Inc. issued the following statement from its Board of Directors in response to the press release issued on April 22, 2024 by Mountaineer Partners Management, LLC (“Mountaineer”) in which Mountaineer published its letter to the Board of Directors urging the Board to consider adopting and implementing a $600 million accelerated share repurchase.
Vishay regularly engages with our stockholders and welcomes constructive input focused on enhancing value. Vishay’s CEO has held numerous discussions with Mountaineer since his appointment to the position on January 1, 2023, and the senior management team met with stockholders most recently at the company’s Investor Day held on April 2, 2024.
Vishay’s Board appreciates and is carefully evaluating the suggestion made by Mountaineer along with input from other stockholders to determine the course of action that is in the best interest of the company and all stockholders.
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