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Vishay Intertechnology, Inc. announced that it has been honored by DENSO Corporation, a leading mobility supplier, with a 2022 Collaboration Award.
The 2022 Collaboration Awards recognize suppliers that have continued to provide DENSO with key components that keep production lines moving for the company and its customers, despite the tight supply market. Previously this year, Vishay was also recognized by DENSO with a 2022 North America Business Partner of the Year Award in the Quality Leader category.
“Vishay has demonstrated a strong commitment to supporting DENSO on both a working and management level,” said Kouji Arima, CEO of DENSO. “We sincerely appreciate the company’s unsparing efforts and contributions, and know we can count on them regardless of the market situation. We look forward to building an even stronger partnership with Vishay as we continue working together.”
“We are deeply honored to receive this acknowledgment from DENSO of our unwavering support during challenging market conditions,” said Joel Smejkal, President and CEO at Vishay. “This recognition underscores our commitment to operational excellence and the strength of our partnership with the company. We look forward to building on this level of collaboration to grow together in the coming years.”
Original – Vishay Intertechnology
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Vishay Intertechnology, Inc. introduced a new fourth-generation 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHP054N65E slashes on-resistance by 48.2 %, while offering a 59 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHP054N65E and other devices in the fourth-generation 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and data storage; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP054N65E’s low typical on-resistance of 0.051 Ω at 10 V results in a higher power rating for applications > 2 kW and allows the device to address the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 72 nC. The resulting FOM of 3.67 Ω*nC is 1.1 % lower than the closest competing MOSFET in the same class, which translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency in telecom power supplies.
For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 115 pF and 772 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 5.87 Ω*pF. Offered in the TO-220AB package and providing increased dv/dt ruggedness, the SiHP054N65E is RoHS-compliant, halogen-free, and Vishay Green, and is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
